Effects of thermal annealing on the semi-insulating properties of radio frequency magnetron sputtering-produced germanate thin films

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

An AC voltage regulator with high-power-factor, and control using a FPGA device

This paper presents the analysis, design, simulation, and experimental results for a high frequency high Power-Factor (PF) AC (Alternate Current) voltage regulator, using a Sepic converter as power stage. The control technique employed to impose a sinusoidal input current waveform, with low Total Harmonic Distortion (THD), is the sinusoidal variable hysteresis control. The control technique was implemented in a FPGA (Field Programmable Gate Array) device, using a Hardware Description Language (VHDL). Through the use of the proposed control technique, the AC voltage regulator performs active power-factor correction, and low THD in the input current, for linear and non-linear loads, satisfying the requirements of the EEC61000-3-2 standards. Experimental results from an example prototype, designed for 300W of nominal output power, 50kHz (switching frequency), and 127Vrms of nominal input and output voltages, are presented in order to validate the proposed AC regulator. © 2005 IEEE.

Avaliação da resistência ao desgaste abrasivo de revestimentos soldados do tipo Fe-C-Cr utilizados na indústria sucroalcooleira

Pós-graduação em Engenharia Mecânica - FEIS

Investigação de contatos elétricos e propriedades de filmes finos de SnO2 dopados com os íons terras raras Eu3+ e Ce3+

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Caracterização de filmes finos de polímeros entrecruzáveis como camada dielétrica em dispositivos de eletrônica orgânica

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo da segregação de dopantes no contorno de grão e sua influência nas propriedades elétricas de cerâmicas à base de 'SN''O IND.2'

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo de um sistema varistor à base de 'SN''O IND.2' dopado com terras-raras

Pós-graduação em Química - IQ

Electrical transport mechanisms and structure of hydrogenated and non-hydrogenated nanocrystalline Ga1-xMnxAs films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Polyazomethine with vinylene and phenantridine moieties in the main chain: Synthesis, characterization, opto(electrical) properties and theoretical calculations

The opto(electrical) properties and theoretical calculations of polyazomethine with vinylene and phenantridine moieties in the main chain were investigated in the present study. 2,5-Bis(hexyloxy)-1,4-bis[(2,5-bis(hexyloxy)-4-formyl-phenylenevinylene]benzene was polymerized in solution with 3,8-diamino-6-phenylphenanthridine (PAZ-PV-Ph). The temperatures of 5% weight loss (T-5%) of the polyazomethine was observed at 356 degrees C in nitrogen. Electrochemical properties of thin film of the polymer were studied by differential pulse voltammetry. The HOMO level of the PAZ-PV-Ph was at -4.97 eV. The energy band gap (E-g) was detected of approximately similar to 1.9 eV. Energy band gap (E-gopt) was additionally calculated from absorption spectrum and absorption coefficient alpha. The absorption UV-vis spectra of polyazomethine recorded in solution showed a blue shift in comparison with the solid state. HOMO-LUMO levels and E-g were additionally calculated theoretically by density functional theory and molecular simulations of PAZ-PV-Ph are presented. Current density-voltage (J-U) measurements were performed on ITO/PAZ-PV-Ph/Al, ITO/TiO2/PAZ-PV-Ph/Al and ITO/PEDOT/PAZ-PV-Ph:TiO2/Al devices in the dark and during irradiation with light (under illumination of 1000 W m(-2)). The polymer was tested using AFM technique and roughness (R-a, R-ms) along with skew and kurtosis are presented.

Electrical characterization of poly(amide-imide) for application in organic field effect devices

The admittance spectra and current-voltage (I-V) characteristics are reported of metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) capacitors employing cross-linked poly(amide-imide) (c-PAI) as the insulator and poly(3-hexylthiophene) (P3HT) as the active semiconductor. The capacitance of the MIM devices are constant in the frequency range from 10 Hz to 100 kHz, with tan delta values as low as 7 x 10(-3) over most of the range. Except at the lowest voltages, the I-V characteristics are well-described by the Schottky equation for thermal emission of electrons from the electrodes into the insulator. The admittance spectra of the MIS devices displayed a classic Maxwell-Wagner frequency response from which the transverse bulk hole mobility was estimated to be similar to 2 x 10(-5) cm(2) V(-1)s(-1) or similar to 5 x 10(-8) cm(2) V(-1)s(-1) depending on whether or not the surface of the insulator had been treated with hexamethyldisilazane (HMDS) prior to deposition of the P3HT. From the maximum loss observed in admittance-voltage plots, the interface trap density was estimated to be similar to 5 x 10(10) cm(-2) eV(-1) or similar to 9 x 10(10) cm(-2) eV(-1) again depending whether or not the insulator was treated with HMDS. We conclude, therefore, that HMDS plays a useful role in promoting order in the P3HT film as well as reducing the density of interface trap states. Although interposing the P3HT layer between the insulator and the gold electrode degrades the insulating properties of the c-PAI, nevertheless, they remain sufficiently good for use in organic electronic devices. (c) 2012 Elsevier B.V. All rights reserved.

Production of liquid core-polymer shell microcapsules

Polylactide (PLA) is a biodegradable polymer that has been used in particle form for drug release, due to its biocompatibility, tailorable degradation kinetics, and desirable mechanical properties. Active pharmaceutical ingredients (APIs) may be either dissolved or encapsulated within these biomaterials to create micro- or nanoparticles. Delivery of an AIP within fine particles may overcome solubility or stability issues that can result in early elimination or degradation of the AIP in a hostile biological environment. Furthermore, it is a promising method for controlling the rate of drug delivery and dosage. The goal of this project is to develop a simple and cost-effective device that allows us to produce monodisperse micro- and nanocapsules with controllable size and adjustable sheath thickness on demand. To achieve this goal, we have studied the dual-capillary electrospray and pulsed electrospray. Dual-capillary electrospray has received considerable attention in recent years due to its ability to create core-shell structures in a single-step. However, it also increases the difficulty of controlling the inner and outer particle morphology, since two simultaneous flows are required. Conventional electrospraying has been mainly conducted using direct-current (DC) voltage with little control over anything but the electrical potential. In contrast, control over the input voltage waveform (i.e. pulsing) in electrospraying offers greater control over the process variables. Poly(L-lactic acid) (PLLA) microspheres and microcapsules were successfully fabricated via pulsed-DC electrospray and dual-capillary electrospray, respectively. Core shell combinations produced include: Water/PLLA, PLLA/polyethylene glycol (PEG), and oleic Acid/PLLA. In this study, we designed a novel high-voltage pulse forming network and a set of new designs for coaxial electrospray nozzles. We also investigated the effect of the pulsed voltage characteristics (e.g. pulse frequency, pulse amplitude and pulse width) on the particle’s size and uniformity. We found that pulse frequency, pulse amplitude, pulse width, and the combinations of these factors had a statistically significant effect on the particle’s size. In addition, factors such as polymer concentration, solvent type, feed flow rate, collection method, temperature, and humidity can significantly affect the size and shape of the particles formed.

STOCHASTIC CHARGE TRANSPORT IN MULTI-ISLAND SINGLE-ELECTRON TUNNELING DEVICES

The physics of the operation of singe-electron tunneling devices (SEDs) and singe-electron tunneling transistors (SETs), especially of those with multiple nanometer-sized islands, has remained poorly understood in spite of some intensive experimental and theoretical research. This computational study examines the current-voltage (IV) characteristics of multi-island single-electron devices using a newly developed multi-island transport simulator (MITS) that is based on semi-classical tunneling theory and kinetic Monte Carlo simulation. The dependence of device characteristics on physical device parameters is explored, and the physical mechanisms that lead to the Coulomb blockade (CB) and Coulomb staircase (CS) characteristics are proposed. Simulations using MITS demonstrate that the overall IV characteristics in a device with a random distribution of islands are a result of a complex interplay among those factors that affect the tunneling rates that are fixed a priori (e.g. island sizes, island separations, temperature, gate bias, etc.), and the evolving charge state of the system, which changes as the source-drain bias (VSD) is changed. With increasing VSD, a multi-island device has to overcome multiple discrete energy barriers (up-steps) before it reaches the threshold voltage (Vth). Beyond Vth, current flow is rate-limited by slow junctions, which leads to the CS structures in the IV characteristic. Each step in the CS is characterized by a unique distribution of island charges with an associated distribution of tunneling probabilities. MITS simulation studies done on one-dimensional (1D) disordered chains show that longer chains are better suited for switching applications as Vth increases with increasing chain length. They are also able to retain CS structures at higher temperatures better than shorter chains. In sufficiently disordered 2D systems, we demonstrate that there may exist a dominant conducting path (DCP) for conduction, which makes the 2D device behave as a quasi-1D device. The existence of a DCP is sensitive to the device structure, but is robust with respect to changes in temperature, gate bias, and VSD. A side gate in 1D and 2D systems can effectively control Vth. We argue that devices with smaller island sizes and narrower junctions may be better suited for practical applications, especially at room temperature.

InN/GaN heterojunction electrical behavior

Indium nitride (InN) has been the subject of intense research in recent years. Some of its most attractive features are its excellent transport properties such as its small band edge electron effective mass, high electron mobilities and peak drift velocities, and high frequency transient drift velocity oscillations [1]. These suggest enormous potential applications for InN in high frequency electronic devices. But to date the high unintentional bulk electron concentration (n~1018 cm-3) of undoped InN samples and the surface electron accumulation layer make it a hard task to create a reliable metalsemiconductor Schottky barrier. Some attempts have been made to overcome this problem by means of material oxidation [2] or deposition of insulators [3]. In this work we present a way to obtain an electrical rectification behaviour by means of heterojunction growth. Due to the big band gap differences among nitride semiconductors, it’s possible to create a structure with high band offsets. In InN/GaN heterojunctions, depending on the GaN doping, the magnitude of conduction and valence band offset are critical parameters which allow distinguishing among different electrical behaviours. The earliest estimate of the valence band offset at an InN–GaN heterojunction in a wurtzite structure was measured to be ~0.85 eV [4], while the Schottky barrier heights were determined to be ~ 1,4 eV [5].We grew In-face InN layer with varying thickness (between 150 nm and 1 mm) by plasma assisted molecular beam epitaxy (PA-MBE) on GaNntemplates (GaN/Al2O3), with temperatures ranging between 300°C and 450°C. The different doping in GaN template (Si doping, Fe doping and Mg doping) results in differences in band alignments of the two semiconductors changing electrical barriers for carriers and consequently electrical conduction behaviour. The processing of the devices includes metallization of the ohmic contacts on InN and GaN, for which we used Ti/Al/Ni/Au. Whereas an ohmic contact on InN is straightforward, the main issue was the fabrication of the contact on GaN due to the very low decomposition temperature of InN. A standard ohmic contact on GaN is generally obtained by high temperature rapid thermal annealing (RTA), typically done between 500ºC and 900ºC[6]. In this case, the limitation due to the presence of In-face InN imposes an upper limit on the temperature for the thermal annealing process and ohmic contact formation of about 450°C. We will present results on the morphology of the InN layers by X-Ray diffraction and SEM, and electrical measurements, in particular current-voltage and capacitance-voltage characteristics.

Current collection by an active spherical electrode in an unmagnetized plasma

A theoretical model for the steady-state response of anodic contactors that emit a plasma current Ii and collect electrons from a collisionless, unmagnetized plasma is presented. The use of a (kinetic) monoenergetic population for the attracted species, well known in passive probe theory, gives both accuracy and tractability to the theory. The monoenergetic population is proved to behave like an isentropic fluid with radial plus centripetal motion, allowing direct comparisons with ad hoc fluid models. Also, a modification of the original monoenergetic equations permits analysis of contactors operating in orbit-limited conditions. Besides that, the theory predicts that, only for plasma emissions above certain threshold current a presheath/double layer/core structure for the potential is formed (the core mode), while for emissions below that threshold, a plasma contactor behaves exactly as a positive-ion emitter with a presheath/sheath structure (the no-core mode). Ion emitters are studied as a particular case. Emphasis is placed on obtaining dimensionless charts and approximate asymptotic laws of the current-voltage characteristic.

Short, high current electrodynamic tether

An electrodynamic tether experiment, to be carried out in the Russian spacecraft Almaz, is proposed. A 10 km tether would be deployed downwards; the lower 8 km would be nonconductive, the upper 2 km would be conductive, bare, and 2.2 mm in diameter, and would act as a thruster, with power supply at the top. This hybrid arrangement allows for other, onelectrodynamic experiments,reducing costs; it also limits the induced electromotive force, reducing the power to be handled. The current-voltage characteristic of contactors would be measured. With the anode switched off, the wire itself should collect a current over 5 A at day conditions, providing a thrust of 0.11 N at a 0.77 kW power.