Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method

LaNiO3 thin films were deposited on SrLaAlO4 (1 0 0) and SrLaAlO4 (0 0 1) single crystal substrates by a chemical solution deposition method and heat-treated in oxygen atmosphere at 700° C in tube oven. Structural, morphological, and electrical properties of the LaNiO 3 thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and electrical resistivity as temperature function (Hall measurements). The X-ray diffraction data indicated good crystallinity and a structural preferential orientation. The LaNiO3 thin films have a very flat surface and no droplet was found on their surfaces. Samples of LaNiO3 grown onto (1 0 0) and (0 0 1) oriented SrLaAlO4 single crystal substrates reveled average grain size by AFM approximately 15-30 nm and 20-35 nm, respectively. Transport characteristics observed were clearly dependent upon the substrate orientation which exhibited a metal-to-insulator transition. The underlying mechanism is a result of competition between the mobility edge and the Fermi energy through the occupation of electron states which in turn is controlled by the disorder level induced by different growth surfaces. © 2013 Elsevier Ltd and Techna Group S.r.l.

Influence of the network modifier on the characteristics of MSnO3 (M=Sr and,Ca) thin films synthesized by chemical solution deposition

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Evidence of magnetoelectric coupling on calcium doped bismuth ferrite thin films grown by chemical solution deposition

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Structural, ferroelectric, and optical properties of Pb0.60Ca0.20Sr0.20TiO3, Pb0.50Ca0.25Sr0.25TiO3 and Pb0.40Ca0.30Sr0.30TiO3 thin films prepared by the chemical solution deposition technique

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Gas sensor properties of zno nanorods grown by chemical bath deposition

The present work shows a study about the growing of ZnO nanorods by chemical bath deposition (CBD) and its application as gas sensor. It was prepared ZnO nanorods and Au decorated ZnO nanorods and the samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and gas sensing response measurements. The results obtained by XRD show the growth of ZnO phase. It was possible to observe the formation of uniform dense well-aligned ZnO nanorods. The results obtained also revealed that Ag nanoparticles have decorated the surface of ZnO nanorods successfully. Au nanoparticles with diameter of a few nanometers were distributed over the ZnO surface nanorods. The gas sensing response measurements showed a behavior of n type semiconductor. Furthermore, the Au-functionalized ZnO nanorods gas sensors showed a considerably enhanced response at 250 and 300 °C.

Fabrication and structural characterization of bismuth niobate thin films grown by chemical solution deposition

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Optical properties of boron carbide (B5C) thin films fabricated by plasma-enhanced chemical-vapor deposition

Variable angle of incidence spectroscopic ellipsometry was used to determine the optical constants near the band edge of boron carbide (B5C) thin films deposited on glass and n-type Si(111) via plasma-enhanced chemical-vapor deposition. The index of refraction n, the extinction coefficient k, and the absorption coefficient are reported in the photon energy spectrum between 1.24 and 4 eV. Ellipsometry analysis of B5C films on silicon indicates a graded material, while the optical constants of B5C on glass are homogeneous. Line shape analyses of absorption data for the films on glass indicate an indirect transition at approximately 0.75 eV and a direct transition at about 1.5 eV. ©1996 American Institute of Physics.

Influence of the network modifier on the characteristics of MSnO3 (M=Sr and Ca) thin films synthesized by chemical solution deposition

CaSnO3 and SrSnO3 alkaline earth stannate thin films were prepared by chemical solution deposition using the polymeric precursor method on various single crystal substrates (R- and C-sapphire and 100-SrTiO3) at different temperatures. The films were characterized by X-ray diffraction (θ-2θ, ω- and φ-scans), field emission scanning electron microscopy, atomic force microscopy, micro-Raman spectroscopy and photoluminescence. Epitaxial SrSnO3 and CaSnO3 thin films were obtained on SrTiO3 with a high crystalline quality. The long-range symmetry promoted a short-range disorder which led to photoluminescence in the epitaxial films. In contrast, the films deposited on sapphire exhibited a random polycrystalline growth with no meaningful emission regardless of the substrate orientation. The network modifier (Ca or Sr) and the substrate (sapphire or SrTiO3) influenced the crystallization process and/or the microstructure. Higher is the tilts of the SnO6 octahedra, as in CaSnO3, higher is the crystallization temperature, which changed also the nucleation/grain growth process.

Sistemi multistrato per il miglioramento del comportamento tribologico dell'acciaio inossidabile AISI 316L: cementazione a bassa temperatura seguita da deposizione PACVD di carbonio amorfo (a-C:H)

Gli acciai inossidabili austenitici presentano ottime caratteristiche che li rendono ideali in tutti quei settori in cui è richiesta un’elevata resistenza alla corrosione associata a caratteristiche estetiche e funzionali. L’acciaio AISI 316L risulta essere uno dei più studiati ed utilizzati, specie nell’industria alimentare e farmaceutica, dove leapparecchiature debbono poter essere sottoposte ad aggressive procedure di sanificazione. Tuttavia, la modesta resistenza meccanica e la bassa durezza superficiale di questo acciaio determinano un comportamento non soddisfacente dal punto di vista dell’usura da strisciamento in assenza di lubrificanti, situazione che si verifica sovente in molti macchinari dedicati a queste industrie. Tra le varie soluzioni, studiate per migliorare il suo comportamento tribologico, la cementazione a bassa temperatura (LowTemperature Carburizing, LTC) seguita dalla deposizione PE-CVD (Plasma-Enhanced Chemical Vapour Deposition) di un rivestimento di carbonio amorfo idrogenato (a-C:H), sembra essere molto promettente. In questo lavoro vengono analizzate le caratteristiche tribologiche dell’acciaio AISI 316L cementato a bassa temperatura e rivestito di carbonio amorfo idrogenato, tramite prove tribologiche di strisciamento non lubrificato in geometria di contatto pattino su cilindro. Sono state verificate, inoltre, le caratteristiche microstrutturali e meccaniche superficiali del rivestimento multistrato LTC/a-C:H tramite osservazioni morfologiche/topografiche, analisi in spettroscopia micro-Raman e misure di indentazione strumentata sulle superfici rivestite, seguite da analisi metallografia e misura dei profili di microdurezza Vickers in sezione trasversale. I risultati ottenuti dimostrano che, ai fini di contenere l’effetto negativo legato all’aumento di rugosità dovuto al trattamento LTC, è opportuno effettuare una lucidatura precedente al trattamento stesso, poiché effettuandola successivamente si rischierebbe dicomprometterne lo strato efficace. Inoltre, si osserva come il trattamento LTC incrementi le capacità del substrato di supportare il rivestimento a-C:H, portando ad un miglioramento delle prestazioni tribologiche, nelle prove di strisciamento non lubrificato. Infine, si dimostra come l’utilizzo di un rivestimento a base di carbonio amorfo idrogenato adeguatamente supportato permetta una riduzione dell’attrito (di oltre cinque volte) e dell’usura (di circa dieci ordini di grandezza) rispetto ai corrispondenti materiali non rivestiti.

Core-shell particles and their application for superhydrophobic surfaces

During the last years great effort has been devoted to the fabrication of superhydrophobic surfaces because of their self-cleaning properties. A water drop on a superhydrophobic surface rolls off even at inclinations of only a few degrees while taking up contaminants encountered on its way. rnSuperhydrophobic, self-cleaning coatings are desirable for convenient and cost-effective maintenance of a variety of surfaces. Ideally, such coatings should be easy to make and apply, mechanically resistant, and long-term stable. None of the existing methods have yet mastered the challenge of meeting all of these criteria.rnSuperhydrophobicity is associated with surface roughness. The lotus leave, with its dual scale roughness, is one of the most efficient examples of superhydrophobic surface. This thesis work proposes a novel technique to prepare superhydrophobic surfaces that introduces the two length scale roughness by growing silica particles (~100 nm in diameter) onto micrometer-sized polystyrene particles using the well-established Stöber synthesis. Mechanical resistance is conferred to the resulting “raspberries” by the synthesis of a thin silica shell on their surface. Besides of being easy to make and handle, these particles offer the possibility for improving suitability or technical applications: since they disperse in water, multi-layers can be prepared on substrates by simple drop casting even on surfaces with grooves and slots. The solution of the main problem – stabilizing the multilayer – also lies in the design of the particles: the shells – although mechanically stable – are porous enough to allow for leakage of polystyrene from the core. Under tetrahydrofuran vapor polystyrene bridges form between the particles that render the multilayer-film stable. rnMulti-layers are good candidate to design surfaces whose roughness is preserved after scratch. If the top-most layer is removed, the roughness can still be ensured by the underlying layer.rnAfter hydrophobization by chemical vapor deposition (CVD) of a semi-fluorinated silane, the surfaces are superhydrophobic with a tilting angle of a few degrees. rnrnrn

Impact of N2 plasma power and duration on AlGaN/GaN HEMT

urface treatments have been recently shown to play an active role in electrical characteristics in AlGaN/GaN HEMTs, in particular during the passivation processing [1-4]. However, the responsible mechanisms are partially unknown and further studies are demanding. The effects of power and time N2 plasma pre-treatment prior to SiN deposition using PE-CVD (plasma enhanced chemical vapour deposition) on GaN and AlGaN/GaN HEMT have been investigated. The low power (60 W) plasma pre-treatment was found to improve the electronic characteristics in GaN based HEMT devices, independently of the time duration up to 20 min. In contrast, high power (150 and 210 W) plasma pretreatment showed detrimental effects in the electronic properties (Fig. 1), increasing the sheet resistance of the 2DEG, decreasing the 2DEG charge density in AlGaN/GaN HEMTs, transconductance reduction and decreasing the fT and fmax values up to 40% respect to the case using 60 W N2 plasma power. Although AFM (atomic force microscopy) results showed AlGaN and GaN surface roughness is not strongly affected by the N2-plasma, KFM (Kelvin force microscopy) surface analysis shows significant changes in the surface potential, trending to increase its values as the plasma power is higher. The whole results point at energetic ions inducing polarization-charge changes that affect dramatically to the 2-DEG charge density and the final characteristics of the HEMT devices. Therefore, we conclude that AlGaN surface is strongly sensitive to N2 plasma power conditions, which turn to be a key factor to achieve a good surface preparation prior to SiN passivation.

Development of One Meter Long Double-Sided CeO2 Buffered Ni-5at.W Templates by Reel-to-Reel Chemical Solution Deposition Route

High performance long-length coated conductors fabricated using various techniques have attracted a lot of interest recently. In this work, a reel-to-reel design for depositing double-sided coatings on long-length flexible metallic tapes via a chemical solution method is proposed and realized. The major achievement of the design is to combine the dip coating and drying processes in order to overcome the technical difficulties of dealing with the wet films on both sides of the tape. We report the successful application of the design to fabricate a one-meter-long double side coated CeO2/Ni-5at%W template. The CeO2 films on both sides exhibit a dense, crack-free morphology, and a high fraction of cube texture on the surface. Homogeneity studies on global texture over the length also reveal that the average full width at half maximum values of the in-plane and out-of-plane orientation on the CeO2 layer are 7.2 ° and 5.8° with standard deviation of 0.26° and 0.34°, respectively, being indicative of the high quality epitaxial growth of the films prepared in the continuous manner. An all chemical solution derived YBCOLow-TFA/Ce0.9La0.1O2 /Gd2Zr2O7/CeO2 structure is obtained on a short sample, demonstrating the possibility of producing long-length texture templates for coated conductors by this low cost deposition route.

Microanalysis of epitaxially grown diamond tip array

Electron backscattering diffraction has been applied on polycrystalline diamond films grown using microwave plasma assisted chemical vapour deposition on silicon substrate, in order to provide a map of the individual diamond grains, grain boundary, and the crystal orientation of discrete crystallites. The nucleation rate and orientation are strongly affected by using a voltage bias on the substrate to influence and enhance the nucleation process, the bias enhanced nucleation process. In this work, the diamond surface is mapped using electron backscattering diffraction, then a layer of a few microns is ion milled away exposing a lower layer for analysis and so on. This then permits a three dimensions reconstruction of the film texture.

The 3-D Structure of Polycrystalline Diamond Film by Electron Backscattering Diffraction (EBSD)

A lithographic method was used to produce polycrystalline diamond films having highly defined surface geometry, showing an array of diamond tips for possible application as a field emitter device. The films grown in this study used microwave plasma assisted chemical vapour deposition (MACVD) on a silicon substrate; the substrate was then dissolved away to reveal the surface features on the diamond film. It is possible to align the crystallite direction and affect the electron emission properties using a voltage bias to enhance the nucleation process and influence the nuclei to a preferred orientation. This study focuses on the identification of the distribution of crystal directions in the film, using electron backscattering diffraction (EBSD) to identify the crystallographic character of the film surface. EBSD allows direct examination of the individual diamond grains, grains boundaries and the crystal orientation of each individual crystallite. The EBSD maps of the bottom (nucleation side) of the films, following which a layer of film is ion-milled away and the mapping process repeated. The method demonstrates experimentally that oriented nucleation occurs and the thin sections allow the crystal texture to be reconstructed in 3-D. (C) 2003 Elsevier B.V. All rights reserved.

Metalorganic chemical vapor deposition of GaAsN epilayers: microstructures and optical properties

In this article, we investigate the parameters used in the MOCVD growth of GaAsN epilayers on GaAs substrates and some of their microstructures and optical properties. The N incorporation was found to mainly depend on the growth temperature and the fractional 1,1-dimethylhydrazine molar flow. A thin highly strained interface layer was observed between GaAsN and GaAs, which, contrary to previously published results, was not N enriched. The low-temperature (10 K) photoluminescence spectra were composed of several emissions that we attribute to a combination of interband transition and transitions involving localized defect states. (C) 2004 Elsevier B.V. All rights reserved.