978 resultados para C-axis Resistivity


Relevância:

80.00% 80.00%

Publicador:

Resumo:

The authors investigated the influence of defects on the piezoelectric and dielectric properties of Bi4Ti3O12 (BIT), SrBi4Ti4O15 (SBTi) and CaBi4Ti4O15 (CBTi144) thin films by x-ray photoemission spectroscopy measurements. In the SBTi film, Sr which is a nonpolarizable ion restricting the movement of Ti4+ ions and thus leads to a low piezoresponse. Meanwhile, the oxygen environment is quite different in the BIT and CBTi144 films exhibiting excellent piezoelectric properties. The piezoelectric coefficient and the dielectric behavior were larger for a-b axis oriented than for c axis-oriented films due to the defects created during the films crystallization. (c) 2007 American Institute of Physics.

Relevância:

80.00% 80.00%

Publicador:

Resumo:

We considered a system of two vortex lines running in different directions with their average vortex direction making an arbitrary angle theta with respect to the crystal c axis. The free energy of this system is calculated as a function of the relative angle 2 alpha between the two inclined vortex lines with respect to each other. For sufficiently high anisotropy, it is shown that, as the induction is tilted away from the crystal c axis (theta not equal 0), the inclined vortex lines (alpha not equal 0) suddenly becomes more stable than that with parallel vortex lines (alpha = 0). While theta is increased, the system continuously changes towards the parallel configuration before the angle theta approaches 90 degrees.

Relevância:

80.00% 80.00%

Publicador:

Resumo:

c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films were grown on a RuO2 top electrode deposited on a (100) SiO2/Si substrate by the polymeric precursor method. X-ray diffraction and atomic force microscope investigations indicate that the films exhibit a dense, well crystallized microstructure having random orientations with a rather smooth surface morphology. The electrical properties of preferred oriented Bi3.25La0.75Ti3O12 (BLT) thin films deposited on RuO2 bottom electrode leaded to a large remnant polarization (P-r ) of 17.2 mu C/cm(2) and (V-c ) of 1.8 V, fatigue free characteristics up to 10(10) switching cycles and a current density of 2.2 mu A/cm(2) at 5 V. We found that the polarization loss is insignificant with nine write/read voltages at a waiting time of 10,000 s. Independently of the applied electric field the retained switchable polarization approached a nearly steady-state value after a retention time of 10 s.

Relevância:

80.00% 80.00%

Publicador:

Resumo:

Ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin films were deposited on Pt/Ti/SiO2/Si substrates by the polymeric precursor method. The films present c-axis preferred orientation after annealing at 700 degrees C for 2 h in conventional furnace. All the capacitors showed good polarization fatigue characteristics at least up to 1x10(10) bipolar pulse cycles and excellent retention properties up to 1x10(4) s. We found that the polarization loss is insignificant with five write/read voltages at a waiting time of 10 000 S. Independently of the applied electric field the retained switchable polarization approached a nearly steady-state value after a retention time of 10 s. (C) 2005 American Institute of Physics.

Relevância:

80.00% 80.00%

Publicador:

Resumo:

The growth of nanocrystalline Ga1-zMnxN (0.00 <= x <= 0.18) films grown by reactive RF-magnetron sputtering is focused here for the first time. The films were grown in a N-2 atmosphere by co-sputtering technique using a Ga target covered with small pieces of Mn onto c-GaAs (10 0), c-Si (10 0) and amorphous SiO2 substrates maintained at 500 K. Scanning electron microscopy and X-ray diffraction (XRD) experiments did not show any evidence for Mn segregation within the studied composition range. EDX measurements show that the Mn concentration is increased monotonically with the fraction of the target area covered by Mn. The XRD characterization show that the films are nanocrystalline, the crystallites having mean grain sizes in the 15-19 nm range and wurtzite structure with preferential growth orientation along the c-axis direction. The lattice parameters of alpha-GaN (a and c) increase practically linearly with the increase of Mn incorporation. The changes in the structural properties of our films due to the Mn incorporation are similar to those that occur in ferromagnetic GaMnN single-crystal films. (c) 2006 Elsevier B.V. All rights reserved.

Relevância:

80.00% 80.00%

Publicador:

Resumo:

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Relevância:

80.00% 80.00%

Publicador:

Resumo:

In order to determine structural changes during drying of inorganic gels, the local and long-range order structure of SnO2-x(OH)2x xerogels resulting from drying hydrogels with different concentrations of electrolyte (Cl- and NH+ 4) have been measured by extended X-ray absorption fine structure (EXAFS), X-ray diffraction (XRD) and N2 adsorption techniques. EXAFS measurements performed at the Sn K edge on the hydrogels and xerogels show the existence of microcrystallites with the cassiterite structure. Two drying modes have been used: freeze drying and drying by evaporation at 45°C. It is shown that the microcrystallite size determined by XRD and EXAFS techniques on the drying mode and on the electrolyte concentrations. The microcrystallite size measured on the freeze dried xerogels is similar to that of their parent hydrogels, whatever the concentration of electrolyte; however, during drying by evaporation, a preferential growth of microcrystallites along the c-axis of the cassiterite structure is observed. The size of these crystallites is enhanced with a decrease of the electrolyte concentration. Specific surface areas calculated by the Brunauer-Emmett-Teller method indicate that this preferential growth is related to the improvement of the network connectivity. The comparison of both drying processes indicates that crystallization and polycondensation are independent phenomena. © 1995 Elsevier Science B.V. All rights reserved.

Relevância:

80.00% 80.00%

Publicador:

Resumo:

Two distinct expressions of the interaction potential between arbitrarily oriented curved vortex lines with respect to the crystal c axis are derived within the London approximation. One of these expressions is used to compute the eigenvalues of the elasticity matrix. We examine the elastic properties of the vortex chain lattice, recently proposed, concerning shearing deformation.

Relevância:

80.00% 80.00%

Publicador:

Resumo:

The structure of tick anticoagulant peptide (TAP) has been determined by X-ray crystallography at t.6 Å resolution complexed with bovine pancreatic trypsin inhibitor (BPTI). The TAP-BPTI crystals are tetragonal, a = b = 46.87, c = 50.35 Å, space group P41, four complexes per unit cell. The TAP molecules are highly dipolar and form an intermolecular helical array along the c-axis with a diameter of about 45 Å. Individual TAP units interact in a head-to-tail fashion, the positive end of one molecule associating with the distal negative end of another, and vice versa. The BPTI molecules have a uniformly distributed positively charged surface that interacts extensively through 14 hydrogen bonds and two hydrogen bonded salt bridges with the helical groove around the helical TAP chains. Comparing the structure of TAP in TAP-BPTI with TAP bound to factor Xa(Xa) suggests a massive reorganization in the N-terminal tetrapeptide and the first disulfide loop of TAP (CyS5(T)- Cys 15(T)) upon binding to Xa. The Tyr1(T)OH atom of TAP moves 14.2 Å to interact with Asp189 of the S1 specificity site, Arg3(T)CZ moves 5.0 Å with the guanidinium group forming a cation-π-electron complex in the S4 subsite of Xa, while Lys7(T)NZ differs in position by 10.6 Å in TAP-BPTI and TAP-Xa, all of which indicates a different pre-Xa-bound conformation for the N- terminal of TAP in its native state. In contrast to TAP, the BPTI structure of TAP-BPTI is practically the same as all those of previously determined structures of BPTI, only arginine and lysine side-chain conformations showing significant differences.

Relevância:

80.00% 80.00%

Publicador:

Resumo:

Undoped and indium-doped Zinc oxide (ZnO) solid films were deposited by the pyrosol process at 450°C on glass substrates from solutions where In/Zn ratio was 2, 5, and 10 at.%. Electrical measurements performed at room temperature show that the addition of indium changes the resistance of the films. The resistivities of doped films are less than non-doped ZnO films by one to two orders of magnitude depending on the dopant concentration in the solution. Preferential orientation of the films with the c-axis perpendicular to the substrate was detected by X-ray diffraction and polarized extended X-ray absorption fine structures measurements at the Zn K edge. This orientation depends on the indium concentration in the starting solution. The most textured films were obtained for solutions where In/Zn ratio was 2 and 5 at.%. When In/Zn = 10 at.%, the films had a nearly random orientation of crystallites. Evidence of the incorporation of indium in the ZnO lattice was obtained from extended X-ray absorption fine structures at the In and Zn K edges. The structural analysis of the least resistive film (Zn/In = 5 at.%) shows that In substitutes Zn in the wurtzite structure. © 2000 Elsevier Science B.V. All rights reserved.

Relevância:

80.00% 80.00%

Publicador:

Resumo:

Bismuth titanate templates (Bi4Ti3O12) were synthesized by the molten salt method in Na2SO4 and K2SO4 fluxes, using an amorphous Bi4Ti 3O12 precursor and a mechanically mixed Bi 2O3+TiO2 mixture as the starting materials. The templates were characterized by means of X-Ray Diffraction, FT-IR, FT-Raman, FEG-SEM and TEM. The templates are free of secondary phases and present orthorhombic structure with orientation in the c-plane. FT-IR suggests no traces of sulfate groups revealing that the molten salt synthesis was beneficial for elimination of inorganic species and for the arrangement of individual nanocrystals into ordered lattices. FEG-SEM analyses of BIT templates revealed that most of the grains were homogeneous with a length of 3.1 μm and a width of 0.3 μm and had plate-like morphology. TEM investigations show that the c-axis of the perovskite units is parallel to the thickness direction of the grains and no liquid-phase was formed during BIT phase formation. © 2013 Elsevier Ltd and Techna Group S.r.l.

Relevância:

80.00% 80.00%

Publicador:

Resumo:

A polymeric complex [Eu(α-tpc)3(α-Htpc) 2]n and its characterization by single crystal X-ray and thermal analysis, infrared and photoluminescence spectroscopies are described. The compound crystallizes in the monoclinic Cc space group. The asymmetric unit is formed from a europium ion bonded to one carboxyl oxygen of five different thiophene carboxylic moieties. Three of these moieties are deprotonated and bridge between neighboring europium ions giving rise to an infinite polymer along the c axis. Besides the europium characteristic emission lines, the emission spectra show unambiguously the crystal size effect on the 5D0 → 7F0 transition. The complex thermal decomposition at 220 C leads to a stable luminescent complex in which the 5D0 → 7F4 transition reveals a monomeric characteristic. The Judd-Ofelt intensity parameters to the polymeric and the monomeric compound with the same ligand and coordination number were compared. © 2013 Published by Elsevier Ltd.

Relevância:

80.00% 80.00%

Publicador:

Resumo:

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Relevância:

80.00% 80.00%

Publicador:

Resumo:

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)