Ultra-thin tunable microwave absorber using liquid crystals

A dynamically adaptive radar absorber is described which is based on a periodic array of microstrip patches that are printed on a 500 mu m-thick liquid crystal substrate. The measured reflectivity of the structure is less than -38 dB with a 200 MHz -10 dB bandwidth at 10.19 GHz when a +4 DC bias is applied. It is shown that a 34 dB reduction in signal loss occurs when the bias voltage is increased to 20 V.

Design and measurement of reconfigurable millileter wave reflectarray cells with nematic liquid crystal

Numerical simulations are used to study the electromagnetic scattering from phase agile microstrip reflectarray cells which exploit the voltage controlled dielectric anisotropy property of nematic state liquid crystals (LC). In the computer model two arrays of equal size elements constructed on a 15?m thick tuneable LC layer were designed to operate at centre frequencies of 102 GHz and 130 GHz. Micromachining processes based on the metallization of quartz/silicon wafers and an industry compatible LCD packaging technique were employed to fabricate the grounded periodic structures. The loss and phase of the reflected signals were measured using a quasi-optical test bench with the reflectarray cells inserted at the beam waist of the imaged Gaussian beam, thus eliminating some of the major problems associated with traditional free-space characterisation at these frequencies. By applying a low frequency AC bias voltage of 10 V, a 165o phase shift with a loss 4.5 dB-6.4 dB at 102 GHz and 130o phase shift with a loss variation between 4.3 dB – 7 dB at 130 GHz was obtained. The experimental results are shown to be in close agreement with the computer model.

The influence of the relative phase between the driving voltages on electron heating in asymmetric dual frequency capacitive discharges

The influence of the relative phase between the driving voltages on electron heating in asymmetric phase-locked dual frequency capacitively coupled radio frequency plasmas operated at 2 and 14 MHz is investigated. The basis of the analysis is a nonlinear global model with the option to implement a relative phase between the two driving voltages. In recent publications it has been reported that nonlinear electron resonance heating can drastically enhance the power dissipation to electrons at moments of sheath collapse due to the self-excitation of nonlinear plasma series resonance (PSR) oscillations of the radio frequency current. This work shows that depending on the relative phase of the driving voltages, the total number and exact moments of sheath collapse can be influenced. In the case of two consecutive sheath collapses a substantial increase in dissipated power compared with the known increase due to a single PSR excitation event per period is observed. Phase resolved optical emission spectroscopy (PROES) provides access to the excitation dynamics in front of the driven electrode. Via PROES the propagation of beam-like energetic electrons immediately after the sheath collapse is observed. In this work we demonstrate that there is a close relation between moments of sheath collapse, and thus excitation of the PSR, and beam-like electron propagation. A comparison of simulation results to experiments in a single and dual frequency discharge shows good agreement. In particular the observed influence of the relative phase on the dynamics of a dual frequency discharge is described by means of the presented model. Additionally, the analysis demonstrates that the observed gain in dissipation is not accompanied by an increase in the electrode’s dc-bias voltage which directly addresses the issue of separate control of ion flux and ion energy in dual frequency capacitively coupled radio frequency plasmas.

Envelope-tracking-based Doherty power amplifier

From the instantaneous efficiency plot, it is observed that the conventional 2-stage Doherty power amplifier (DPA) with high upper power dynamic range (>12 dB) suffers from a substantial dip in the middle of the upper power regime, thus reducing the average efficiency. In this study, an envelope-tracking-based DPA is proposed in order to minimise this dip by adjusting the drain bias voltage of the auxiliary amplifier of the DPA proportional to the input power level.

Electronically Reconfigurable Liquid Crystal Based Mm-Wave Polarization Converter

An electronically tunable reflection polarizer which exploits the dielectric anisotropy of nematic liquid crystals (LC) has been designed, fabricated and measured in a frequency band centered at 130 GHz. The phase agile polarizing mirror converts an incident slant 45° signal upon reflection to right hand circular (RHCP), orthogonal linear (-45 °) or left hand circular (LHCP) polarization depending on the value of the voltage biasing the LC mixture. In the experimental set-up this is achieved by applying a low frequency bias voltage of 0 V, 40 V and 89 V respectively, across the cavity containing the LC material.

Development of a varactor -controlled dual-frequency reconfigurable microstrip antenna

A new design for a compact electronically reconffgurable singlefeed dual frequency dual-polarized operation of a square-microstrip antenna capable of achieving tunable frequency ratios in the range 1.1 to 1.37 is proposed and experimentally studied. Varactor diodes inlegruted with the arms of the hexagonal slot and embedded in the square patch are used to tune the operating frequencies by applying reverse-bias voltage. The design has the advantage of size reduction up to 73.21% and 49.86% for the two resonant frequencies, respectively, as compared to standard rectangular patches. The antenna offers good bandwidth of 5.74% and 5.36% for the two operating frequencies. A highly simplified tuning circuitry without any transmission lines adds to the compactness of the design

Design of Compact Reconfigurable Dual Frequency Microstrip Antennas Using Varactor Diodes

The design of a compact, single feed, dual frequency dual polarized and electronically reconfigurable microstrip antenna is presented in this paper. A square patch loaded with a hexagonal slot having extended slot arms constitutes the fundamental structure of the antenna. The tuning of the two resonant frequencies is realized by varying the effective electrical length of the slot arms by embedding varactor diodes across the slots. A high tuning range of 34.43% (1.037–1.394 GHz) and 9.27% (1.359–1.485 GHz) is achieved for the two operating frequencies respectively, when the bias voltage is varied from 0 to −30 V. The salient feature of this design is that it uses no matching networks even though the resonant frequencies are tuned in a wide range with good matching below −10 dB. The antenna has an added advantage of size reduction up to 80.11% and 65.69% for the two operating frequencies compared to conventional rectangular patches.

IxV Curves of Boron and Nitrogen Doping Zigzag Graphene Nanoribbons

We investigate the transport properties (IxV curves and zero bias transmittance) of pristine graphene nanoribbons (GNRs) as well as doped with boron and nitrogen using an approach that combines nonequilibrium Green`s functions and density functional theory (DFT) [NEGF-DFT]. Even for a pristine nanoribbon we verify a spin-filter effect under finite bias voltage when the leads have an antiparallel magnetization. The presence of the impurities at the edges of monohydrogenated zigzag GNRs changes dramatically the charge transport properties inducing a spin-polarized conductance. The IxV curves for these systems show that depending on the bias voltage the spin polarization can be inverted. (C) 2010 Wiley Periodicals, Inc. Int J Quantum Chem 111: 1379-1386, 2011

Transient responses of a wetting film to mechanical and electrical perturbations

This article reports real-time observations and detailed modeling of the transient response of thin aqueous films bounded by a deformable surface to external mechanical and electrical perturbations. Such films, tens to hundreds of nanometers thick, are confined between a molecularly smooth mica plate and a deformable mercury/electrolyte interface on a protuberant drop at a sealed capillary tube. When the mercury is negatively charged, the water forms a wetting film on mica, stabilized by electrical double layer forces. Mechanical perturbations are produced by driving the mica plate toward or by retracting the mica plate from the mercury surface. Electrical perturbations are applied to change the electrical double layer interaction between the mica and the mercury by imposing a step change of the bias voltage between the mercury and the bulk electrolyte. A theoretical model has been developed that can account for these observations quantitatively. Comparison between experiments and theory indicates that a no-slip hydrodynamic boundary condition holds at the molecularly smooth mica/electrolyte surface and at the deformable mercury/electrolyte interface. An analysis of the transient response based on the model elucidates the complex interplay between disjoining pressure, hydrodynamic forces, and surface deformations. This study also provides insight into the mechanism and process of droplet coalescence and reveals a novel, counterintuitive mechanism that can lead to film instability and collapse when an attempt is made to thicken the film by pulling the bounding mercury and mica phases apart.

On the origin of exciton formation in dye doped Alq(3) OLEDs

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Kinetics of interface state-limited hole injection in alpha-naphthylphenylbiphenyl diamine (alpha-NPD) thin layers

Injection-limited operation is identified in thin-film, alpha-NPD-based diodes. A detailed model for the impedance of the injection process is provided which considers the kinetics of filling/releasing of interface states as the key factor behind the injection mechanism. The injection model is able to simultaneously account for the steady-state, current-voltage (J-V) characteristics and impedance response. and is based on the sequential injection of holes mediated by energetically distributed surface states at the metal-organic interface. The model takes into account the vacuum level offset caused by the interface dipole, along with the partial shift of the interface level distribution with bias voltage. This approach connects the low-frequency (similar to 1 Hz) capacitance spectra, which exhibits a transition between positive to negative values, to the change in the occupancy of interface states with voltage. Simulations based on the model allow to derive the density of interface states effectively intervening in the carrier injection (similar to 5 x 10(12) cm(-2)), which exhibit a Gaussian-like distribution. A kinetically determined hole barrier is calculated at levels located similar to 0.4 eV below the contact work function. (C) 2008 Elsevier B.V. All rights reserved.

Impedance of carrier injection at the metal-organic interface mediated by surface states in electron-only tris(8-hydroxyquinoline) aluminium (Alq(3)) thin layers

Capacitance spectra of thin (< 200 nm) Alq(3) electron-only devices have been measured as a function of bias voltage. Capacitance spectra exhibit a flat response at high frequencies (> 10(3) Hz) and no feature related to the carrier transit time is observed. Toward low frequencies the spectra reach a maximum and develop a negative excess capacitance. Capacitance response along with current-voltage (J-V) characteristics are interpreted in terms of the injection of electrons mediated by surface states at the metal organic interface. A detailed model for the impedance of the injection process is provided that highlights the role of the filling/releasing kinetics of energetically distributed interface states. This approach connects the whole capacitance spectra to the occupancy of interface states, with no additional information about bulk trap levels. Simulations based on the model allow to derive the density of interface states effectively intervening in the carrier injection (similar to 1.5 x 10(12) cm (2)). (C) 2008 Elsevier B.V. All rights reserved.

Numerical simulation of magnetic field enhanced plasma immersion ion implantation

The behavior of plasma and sheath characteristics under the action of an applied magnetic field is important in many applications including plasma probes and material processing. Plasma immersion ion implantation (PIII) has been developed as a fast and efficient surface modification technique of complex shaped three-dimensional objects. The PIII process relies on the acceleration of ions across a high-voltage plasma sheath that develops around the target. Recent studies have shown that the sheath dynamics is significantly affected by an external magnetic field. In this work we describe a two-dimensional computer simulation of magnetic field enhanced plasma immersion implantation system. Negative bias voltage is applied to a cylindrical target located on the axis of a grounded cylindrical vacuum chamber filled with uniform nitrogen plasma. An axial magnetic field is created by a solenoid installed inside the cylindrical target. The computer code employs the Monte Carlo method for collision of electrons and neutrals in the plasma and a particle-in-cell (PIC) algorithm for simulating the movement of charged particles in the electromagnetic field. Secondary electron emission from the target subjected to ion bombardment is also included. It is found that a high-density plasma region is formed around the cylindrical target due to the intense background gas ionization by the magnetized electrons drifting in the crossed ExB fields. An increase of implantation current density in front of high density plasma region is observed. (C) 2007 Elsevier B.V. All rights reserved.

Effect of electron magnetic trapping in a plasma immersion ion implantation system

In this work we describe a two-dimensional computer simulation of magnetic field enhanced plasma immersion implantation system. Negative bias voltage of 10.0 kV is applied to a cylindrical target located on the axis of a grounded vacuum chamber filled with uniform nitrogen plasma. A pair of external coils creates a static magnetic field with main vector component along the axial direction. Thus, a system of crossed ExB field is generated inside the vessel forcing plasma electrons to rotate in azimuthal direction. In addition, the axial variation of the magnetic field intensity produces magnetic mirror effect that enables axial particle confinement. It is found that high-density plasma regions are formed around the target due to intense background gas ionization by the trapped electrons. Effect of the magnetic field on the sheath dynamics and the implantation current density of the PIII system is investigated. By changing the magnetic field axial profile (varying coils separation) an enhancement of about 30% of the retained dose can be achieved. The results of the simulation show that the magnetic mirror configuration brings additional benefits to the PIII process, permitting more precise control of the implanted dose.

Influence of degradation on the electrical conduction process in ZnO and SnO2-based varistors

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)