989 resultados para Alternation formation devices
Token codeswitching and language alternation in narrative discourse: a functional-pragmatic approach
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This study is concerned with two phenomena of language alternation in biographic narrations in Yiddish and Low German, based on spoken language data recorded between 1988 and 1995. In both phenomena language alternation serves as an additional communicative tool which can be applied by bilingual speakers to enlarge their set of interactional devices in order to ensure a smoother or more pointed processing of communicative aims. The first phenomenon is a narrative strategy I call Token Cod-eswitching: In a bilingual narrative culminating in a line of reported speech, a single element of L2 indicates the original language of the reconstructed dialogue – a token for a quote. The second phenomenon has to do with directing procedures, carried out by the speaker and aimed at guiding the hearer's attention, which are frequently carried out in L2, supporting the hearer's attention at crucial points in the interaction. Both phenomena are analyzed following a model of narrative discourse as proposed in the framework of Functional Pragmatics. The model allows the adoption of an integral approach to previous findings in code-switching research.
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We present experimental results on the performance of a series of coated, D-shaped optical fiber sensors that display high spectral sensitivities to external refractive index. Sensitivity to the chosen index regime and coupling of the fiber core mode to the surface plasmon resonance (SPR) is enhanced by using specific materials as part of a multi-layered coating. We present strong evidence that this effect is enhanced by post ultraviolet radiation of the lamellar coating that results in the formation of a nano-scale surface relief corrugation structure, which generates an index perturbation within the fiber core that in turn enhances the coupling. We have found reasonable agreement when we modeling the fiber device. It was found that the SPR devices operate in air with high coupling efficiency in excess of 40 dB with spectral sensitivities that outperform a typical long period grating, with one device yielding a wavelength spectral sensitivity of 12000 nm/RIU in the important aqueous index regime. The devices generate SPRs over a very large wavelength range, (visible to 2 mu m) by alternating the polarization state of the illuminating light.
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A novel laser electrodispersion (LE) technique was employed to deposit gold nanoparticles onto Si and SiOx surfaces. The LE technique combines laser ablation with cascade fission of liquid metal micro-drops, which results in the formation of nanoparticles upon rapid cooling. The shape and the size distribution of the Au nanoparticles prepared by LE depend on the nature of the support. Gold nanoparticles were also deposited in the channels of microreactors fabricated by wet etching of Si and used as SE(R)RS sensors. The influence of the nanoparticle surface density as well as of the nature of the substrate on the Raman response was studied. At an appropriate surface density of the deposited nanoparticles a significant enhancement of Raman signal was observed showing the possibility to create efficient SERS substrates. Application of microfluidic devices in surface enhanced Raman spectroscopy (SERS) in continuous-flow mode with sensor regeneration is described. © 2011 The Royal Society of Chemistry.
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Small devices, in the range of nanometers, are playing a major role in today's technology. The field of nanotechnology is concerned with materials and systems whose structures and components exhibit novel and significantly improved physical, chemical and biological properties, phenomena and processes due to their small nanoscale size. Researches more and more are finding that structural features in the range of about 1 to 100 nanometers behave quite differently than isolated molecules (1 nanometer) or bulk materials. For comparison, a 10 nanometer structure is 1000 times smaller than the diameter of a human hair. The virtues of working in the nanodomain are increasingly recognized by the scientific community and discussed in the popular press. The use of such devices is expected to revolutionize our industries and lives. ^ This work mainly focuses on the fabrication, characterization and discovery of new nanostructured thin films. This research consists of the design of a new high-deposition rate nanoparticle machine for depositing nanostructured films from beams of nanoparticles and investigation film's unique optical and physical properties.^ A high-deposition rate nanoparticle machine was designed, built and successfully tested. Different nanostructured thin films were deposited from Copper, Gold, Iron and Zirconium targets with the grain size of between 1 to 20 nm under different conditions. Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM), and x-ray diffraction (XRD) confirmed nanoscale grain size structures of deposited films. The optical properties of the nanostructured films deposited from copper, Iron and Zirconium targets were significantly different from optical properties of bulk and thin films. Zr, Cu and Fe films were transparent. Gold films revealed an epitaxial contact with the silicon substrate with interesting crystal structures. ^ The new high-deposition rate nanoparticle machine was able to deposit new nanostructured films with different properties from bulk and thin films reported in the literatures. ^
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Porous InP layers were formed electrochemically on (100) oriented n-InP substrates in various concentrations of aqueous KOH under dark conditions. In KOH concentrations from 2 mol dm-3 to 5 mol dm-3, a porous layer is obtained underneath a dense near-surface layer. The pores within the porous layer appear to propagate from holes through the near-surface layer. Transmission electron microscopy studies of the porous layers formed under both potentiodynamic and potentiostatic conditions show that both the thickness of the porous layer and the mean pore diameter decrease with increasing KOH concentration. The degree of porosity, estimated to be 65%, was found to remain relatively constant for all the porous layers studied.
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Germanium (Ge) nanowires are of current research interest for high speed nanoelectronic devices due to the lower band gap and high carrier mobility compatible with high K-dielectrics and larger excitonic Bohr radius ensuing a more pronounced quantum confinement effect [1-6]. A general way for the growth of Ge nanowires is to use liquid or a solid growth promoters in a bottom-up approach which allow control of the aspect ratio, diameter, and structure of 1D crystals via external parameters, such as precursor feedstock, temperature, operating pressure, precursor flow rate etc [3, 7-11]. The Solid-phase seeding is preferred for more control processing of the nanomaterials and potential suppression of the unintentional incorporation of high dopant concentrations in semiconductor nanowires and unrequired compositional tailing of the seed-nanowire interface [2, 5, 9, 12]. There are therefore distinct features of the solid phase seeding mechanism that potentially offer opportunities for the controlled processing of nanomaterials with new physical properties. A superior control over the growth kinetics of nanowires could be achieved by controlling the inherent growth constraints instead of external parameters which always account for instrumental inaccuracy. The high dopant concentrations in semiconductor nanowires can result from unintentional incorporation of atoms from the metal seed material, as described for the Al catalyzed VLS growth of Si nanowires [13] which can in turn be depressed by solid-phase seeding. In addition, the creation of very sharp interfaces between group IV semiconductor segments has been achieved by solid seeds [14], whereas the traditionally used liquid Au particles often leads to compositional tailing of the interface [15] . Korgel et al. also described the superior size retention of metal seeds in a SFSS nanowire growth process, when compared to a SFLS process using Au colloids [12]. Here in this work we have used silver and alloy seed particle with different compositions to manipulate the growth of nanowires in sub-eutectic regime. The solid seeding approach also gives an opportunity to influence the crystallinity of the nanowires independent of the substrate. Taking advantage of the readily formation of stacking faults in metal nanoparticles, lamellar twins in nanowires could be formed.
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Germanium was of great interest in the 1950’s when it was used for the first transistor device. However, due to the water soluble and unstable oxide it was surpassed by silicon. Today, as device dimensions are shrinking the silicon oxide is no longer suitable due to gate leakage and other low-κ dielectrics such as Al2O3 and HfO2 are being used. Germanium (Ge) is a promising material to replace or integrate with silicon (Si) to continue the trend of Moore’s law. Germanium has better intrinsic mobilities than silicon and is also silicon fab compatible so it would be an ideal material choice to integrate into silicon-based technologies. The progression towards nanoelectronics requires a lot of in depth studies. Dynamic TEM studies allow observations of reactions to allow a better understanding of mechanisms and how an external stimulus may affect a material/structure. This thesis details in situ TEM experiments to investigate some essential processes for germanium nanowire (NW) integration into nanoelectronic devices; i.e. doping and Ohmic contact formation. Chapter 1 reviews recent advances in dynamic TEM studies on semiconductor (namely silicon and germanium) nanostructures. The areas included are nanowire/crystal growth, germanide/silicide formation, irradiation, electrical biasing, batteries and strain. Chapter 2 details the study of ion irradiation and the damage incurred in germanium nanowires. An experimental set-up is described to allow for concurrent observation in the TEM of a nanowire following sequential ion implantation steps. Grown nanowires were deposited on a FIB labelled SiN membrane grid which facilitated HRTEM imaging and facile navigation to a specific nanowire. Cross sections of irradiated nanowires were also performed to evaluate the damage across the nanowire diameter. Experiments were conducted at 30 kV and 5 kV ion energies to study the effect of beam energy on nanowires of varied diameters. The results on nanowires were also compared to the damage profile in bulk germanium with both 30 kV and 5 kV ion beam energies. Chapter 3 extends the work from chapter 2 whereby nanowires are annealed post ion irradiation. In situ thermal annealing experiments were conducted to observe the recrystallization of the nanowires. A method to promote solid phase epitaxial growth is investigated by irradiating only small areas of a nanowire to maintain a seed from which the epitaxial growth can initiate. It was also found that strain in the nanowire greatly effects defect formation and random nucleation and growth. To obtain full recovery of the crystal structure of a nanowire, a stable support which reduces strain in the nanowire is essential as well as containing a seed from which solid phase epitaxial growth can initiate. Chapter 4 details the study of nickel germanide formation in germanium nanostructures. Rows of EBL (electron beam lithography) defined Ni-capped germanium nanopillars were extracted in FIB cross sections and annealed in situ to observe the germanide formation. Chapter 5 summarizes the key conclusions of each chapter and discusses an outlook on the future of germanium nanowire studies to facilitate their future incorporation into nanodevices.
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Thesis (Master's)--University of Washington, 2016-08
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The Pedagogy of Alternation (PA) is a differentiated teaching methodology, originally created to meet the needs that involve the population of the field. Through its educational procedures, distinct from the traditional education, demand, with autonomy, to form children and young people through the articulation of time and space, and involve the family and community in the educational process and in local development. Having been established as an alternative that generated positive results, the PA has expanded the world and today, with the formation of various movements, is present on five continents. In Brazil, there are two active movements using the PA, the Italian, which afforded the EFAs and the French, responsible for implantation the CFRs. Is in this context, the present research is inserted, which the following objective: to analyse the origins, principles and theoretical-methodological foundations of Pedagogy of Alternation and its implantation in Brazil, as well as some of its current unfolding. With this, it takes into consideration, besides the Brazilian movements, those who influenced its origin, the raised in France and the raised in Italy. The study is characterized as a theoretical, qualitative, bibliographic and documental. The data collection was carried out by searching in the CEPAD/UTFPR database and in the web pages of the institutions involved. After the identification and selection of documents and bibliographies, was realized the qualitative analysis of the data. The results indicate that the Pedagogy of Alternation practiced by the Italian EFAs and the Brazilian CFRs has undergone significant changes over time, keeping only firm the principle alternation of time and space, while the French MFRs and Brazilian EFAs, passed by adaptations, but still solid to principles of PA. The survey also showed that the CFRs in Parana are in a situation of instability about their future, since the links with the government are weakened. Thus, the present study sought to reflect on the meaning and the scope of the PA and its foundations that guarantee the autonomy and strength of this methodology in their places of origin. Therefore, the research presents contributions regarding the elucidation about expansion process of the movements in the three covered countries as well as those faced tensions by each and their transformations in order to highlight the importance of PA for education, comprehensive training of young and to development of the middle.