A III-V channel field effect transistor for non-classical CMOS: process optimisation for improved gate stack function

This thesis describes a collection of studies into the electrical response of a III-V MOS stack comprising metal/GaGdO/GaAs layers as a function of fabrication process variables and the findings of those studies. As a result of this work, areas of improvement in the gate process module of a III-V heterostructure MOSFET were identified. Compared to traditional bulk silicon MOSFET design, one featuring a III-V channel heterostructure with a high-dielectric-constant oxide as the gate insulator provides numerous benefits, for example: the insulator can be made thicker for the same capacitance, the operating voltage can be made lower for the same current output, and improved output characteristics can be achieved without reducing the channel length further. It is known that transistors composed of III-V materials are most susceptible to damage induced by radiation and plasma processing. These devices utilise sub-10 nm gate dielectric films, which are prone to contamination, degradation and damage. Therefore, throughout the course of this work, process damage and contamination issues, as well as various techniques to mitigate or prevent those have been investigated through comparative studies of III-V MOS capacitors and transistors comprising various forms of metal gates, various thicknesses of GaGdO dielectric, and a number of GaAs-based semiconductor layer structures. Transistors which were fabricated before this work commenced, showed problems with threshold voltage control. Specifically, MOSFETs designed for normally-off (VTH > 0) operation exhibited below-zero threshold voltages. With the results obtained during this work, it was possible to gain an understanding of why the transistor threshold voltage shifts as the gate length decreases and of what pulls the threshold voltage downwards preventing normally-off device operation. Two main culprits for the negative VTH shift were found. The first was radiation damage induced by the gate metal deposition process, which can be prevented by slowing down the deposition rate. The second was the layer of gold added on top of platinum in the gate metal stack which reduces the effective work function of the whole gate due to its electronegativity properties. Since the device was designed for a platinum-only gate, this could explain the below zero VTH. This could be prevented either by using a platinum-only gate, or by matching the layer structure design and the actual gate metal used for the future devices. Post-metallisation thermal anneal was shown to mitigate both these effects. However, if post-metallisation annealing is used, care should be taken to ensure it is performed before the ohmic contacts are formed as the thermal treatment was shown to degrade the source/drain contacts. In addition, the programme of studies this thesis describes, also found that if the gate contact is deposited before the source/drain contacts, it causes a shift in threshold voltage towards negative values as the gate length decreases, because the ohmic contact anneal process affects the properties of the underlying material differently depending on whether it is covered with the gate metal or not. In terms of surface contamination; this work found that it causes device-to-device parameter variation, and a plasma clean is therefore essential. This work also demonstrated that the parasitic capacitances in the system, namely the contact periphery dependent gate-ohmic capacitance, plays a significant role in the total gate capacitance. This is true to such an extent that reducing the distance between the gate and the source/drain ohmic contacts in the device would help with shifting the threshold voltages closely towards the designed values. The findings made available by the collection of experiments performed for this work have two major applications. Firstly, these findings provide useful data in the study of the possible phenomena taking place inside the metal/GaGdO/GaAs layers and interfaces as the result of chemical processes applied to it. In addition, these findings allow recommendations as to how to best approach fabrication of devices utilising these layers.

• NEOLIBERALISMO, CRISIS ECONÓMICA ACTUAL Y TRANSFORMACIONES EN EL ESPACIO SOCIAL MUNDIAL

 Desde mediados del año 2009 se  generó una crisis económica mundial que atribuye su inicio a las burbujas financieras del sistema hipotecario estadounidense y continuó con el ya conocido “efecto dominó”: donde la mayoría de los países han experimentado descensos en sus niveles de crecimiento económico y en el poder adquisitivo de su moneda frente al dólar; situación que desembocó en desempleo, inflación y agudización de los problemas sociales y políticos.El paradigma político-económico llamado neoliberalismo, caracterizado por sus constantes y recurrentes crisis se ha manifestado de formas diversas en el espacio social. El presente trabajo busca elaborar una propuesta metodológica sobre la manera de abordar dicha problemática desde las ciencias económica y geográfica.Se pretende analizar y eslabonar, concretamente, los conceptos  de Crisis y Espacio en el marco del Neoliberalismo, sobre la base de los puntos convergentes entre las escuelas de la Crítica de la Economía Política (Marx) y la Geografía Crítica (Lefebvre y Santos), dos escuelas preocupadas por entender críticamente la realidad social. 

ESTADO ACTUAL DE LOS SITIOS DE DISPOSICION DE DESECHOS SOLIDOS MUNICIPALES EN COSTA RICA

En Costa Rica como consecuencia directa del crecimiento urbano acelerado y del cambio en los hábitos de consumo de los pobladores, se da un aumento en la cantidad de desechos sólidos generados así como un cambio en la composición de los mismos, ocasionando entonces el problema de su disposición.En el país, muchos de los sitios municipales actuales se consideran como vertederos a cielo abierto, además, se ubican de manera  que afectan directa o indirectamente los cuerpos de agua (superficiales y subterráneos). Aunado a lo anterior se cuenta en la mayoría de los sitios con el problema de que no se posee control de acceso suficiente, de tal forma que existe  mayor riesgo de que desechos peligrosos se depositen en ellos. ABSTRACTIn Costa Rica, as a direct consequence of accelerated urban growth and changing consumption patterns, there has been an increase in the quantity of generated solid waste as changes in its composition, thus causing a disposal problem.Many of the final disposal sites in the country don’t have the necessary conditions to handle these changes in quantity and quality of generated solid waste.The majority of current municipal disposal sites are considered exposed dumps and are located where superficial and subterranean water bodies are affected. Controls to access are insufficient in the majority of the sites, thus there is greater risk that hazardous waste is deposited in them.

LA RECREACIÓN Y EL TURISMO EN COSTA RICA: CARACTERÍSTICAS Y SITUACIÓN ACTUAL

El turismo se incrementó en Costa Rica a partir de 1985, hasta ser un 1992 la segunda actividad económica del país, superando a las tradicionales exportaciones de café.  Por medio del análisis geográfico se realiza una regionalización de los principales atractivos turísticos, se caracteriza la actividad turística y se analiza su situación actual.  Finalmente se considera el ecoturismo y la necesidad de lograr una simbiosis entre el turismo y la conservación.

Breves observaciones sobre aspectos de la realidad costarricense actual

Se analizan los componentes basicos del modelo costarricense.