955 resultados para 500 MHZ
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Experimental analysis is applied for the first time to identify optimal launch conditions and carrier frequencies for SCM transmission over worst-case MMF. Potential for performance enhancement using electronic equalization is demonstrated for the first time. © 2006 Optical Society of America.
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High-power (more than 500 mW) and high-speed (more than 1 Gbps) tapered lasers at 1060 nm are required in free-space optical communications and (at lower frequencies of around 100 MHz) display applications for frequency doubling to the green. On a 3 mm long tapered laser, we have obtained an open eye diagram at 1 Gbps, together with a high extinction ratio of 11 dB, an optical modulation amplitude of 530 mW, and a high modulation efficiency of 13 W/A. On a 4 mm-long tapered laser, we have obtained an open eye diagram at 700 Mbps, together with a high extinction ratio of 19 dB, a high optical modulation amplitude of 1.6 W, and a very high modulation efficiency of 19 W/A. On a 6 mm-long tapered laser, we have obtained a very high power of 5W CW and a very high static modulation efficiency of 59.8 W/A. © 2011 SPIE.
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EXTRACT (SEE PDF FOR FULL ABSTRACT): High-resolution oxygen-18 and total inorganic carbon (TIC) studies of cored sediments from the Owens Lake Basin, California, indicate that Owens Lake was hydrologically open (overflowing) most of the time between 52,500 and 12,500 carbon-14 YBP. ... The lack of a strong correspondence between North Atlantic climate records and the Owens Lake delta-oxygen-18 record has two possible explanations: (1) the sequence of large and abrupt climate change indicated in North Atlantic records is not global in scope and is largely confined to the North Atlantic and surrounding areas, or (2) Owens Lake is located in a part of the Great Basin that is relatively insensitive to the effects of climate perturbations recorded in the North Atlantic region.
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A method is described for measuring the mechanical properties of polymers in compression at strain rates in the range approximately 300-500 s-1. A gravity-driven pendulum is used to load a specimen on the end of an instrumented Hopkinson output bar and the results are processed by a microcomputer. Stress-strain curves up to high strains are presented for polycarbonate, polyethersulphone and high density polyethylene over a range of temperatures. The value of yield stress, for all three polymers, was found to vary linearly with log (strain rate) at strain rates up to 500 s-1. © 1985.
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A high voltage integrated circuit (HVIC) switch designed as a building block for power converters operating up to 13.56 MHz from off-line voltages is presented. A CMOS-compatible, 500 V power device process is used to integrate control circuitry with a high-speed MOS gate driver and high voltage lateral power MOSFET. Fabrication of the HVIC switches has proceeded in two stages. The first batch of devices showed switching times of less than 5 ns for the power switch and good high frequency performance of a level-shifter for driving half bridge converters. In the second phase, a switch that monolithically integrates all the elements required to form a complete high-frequency converter has been designed.
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The use of two different subcarriers at frequencies up to 5.5 GHz each transmitting 1 Gbit/s over 500 m of multimode fiber (MMF) is demonstrated. By transmitting the two subcarrier channels simultaneously alongside the baseband signal, an aggregate bit rate of 2.8 Gbit/s is possible.
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CMOS nanocrystalline silicon thin film transistors with high field effect mobility are reported. The transistors were directly deposited by radio-frequency plasma enhanced chemical vapor deposition at 150°C The transistors show maximum field effect mobility of 450 cm2/V-s for electrons and 100 cm2/V-s for holes at room temperature. We attribute the high mobilities to a reduction of the oxygen content, which acts as an accidental donor. Indeed, secondary ion mass spectrometry measurements show that the impurity concentration in the nanocrystalline Si layer is comparable to, or lower than, the defect density in the material, which is already low thanks to hydrogen passivation.
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A fully integrated 0.18 μm DC-DC buck converter using a low-swing "stacked driver" configuration is reported in this paper. A high switching frequency of 660 MHz reduces filter components to fit on chip, but this suffers from high switching losses. These losses are reduced using: 1) low-swing drivers; 2) supply stacking; and 3) introducing a charge transfer path to deliver excess charge from the positive metal-oxide semiconductor drive chain to the load, thereby recycling the charge. The working prototype circuit converts 2.2 to 0.75-1.0 V at 40-55 mA. Design and simulation of an improved circuit is also included that further improves the efficiency by enhancing the charge recycling path, providing automated zero voltage switching (ZVS) operation, and synchronizing the half-swing gating signals. © 2009 IEEE.
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Identification of conserved genomic regions within and between different genomes is crucial when studying genome evolution. Here, we described regions of strong synteny conservation between vertebrate deuterostomes (tetrapods and teleosts) and invertebrat