Evaluation and modeling of lanthanum diffusion in TiN/La 2O 3/HfSiON/SiO 2/Si high-k stacks

In this study, TiN/La 2O 3/HfSiON/SiO 2/Si gate stacks with thick high-k (HK) and thick pedestal oxide were used. Samples were annealed at different temperatures and times in order to characterize in detail the interaction mechanisms between La and the gate stack layers. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) measurements performed on these samples show a time diffusion saturation of La in the high-k insulator, indicating an La front immobilization due to LaSiO formation at the high-k/interfacial layer. Based on the SIMS data, a technology computer aided design (TCAD) diffusion model including La time diffusion saturation effect was developed. © 2012 American Institute of Physics.

Electrical and optical properties of ion implanted SOI-based photonic crystals

We investigate the electrical properties of Silicon-on-Insulator photonic crystals as a function of doping level and air filling factor. A very interesting trade-off between conductivity and optical losses in L3 cavities is also found. © 2011 IEEE.

Room-temperature emission at telecom wavelengths from silicon photonic crystal nanocavities

Strongly enhanced light emission at wavelengths between 1.3 and 1.6 μm is reported at room temperature in silicon photonic crystal (PhC) nanocavities with optimized out-coupling efficiency. Sharp peaks corresponding to the resonant modes of PhC nanocavities dominate the broad sub-bandgap emission from optically active defects in the crystalline Si membrane. We measure a 300-fold enhancement of the emission from the PhC nanocavity due to a combination of far-field enhancement and the Purcell effect. The cavity enhanced emission has a very weak temperature dependence, namely less than a factor of 2 reduction between 10 K and room temperature, which makes this approach suitable for the realization of efficient light sources as well as providing a quick and easy tool for the broadband optical characterization of silicon-on-insulator nanostructures. © 2011 American Institute of Physics.

New approaches for enhancing light emission from Er-based materials and devices

In this work, we present some approaches recently developed for enhancing light emission from Er-based materials and devices. We have investigated the luminescence quenching processes limiting quantum efficiency in light-emitting devices based on Si nanoclusters (Si nc) or Er-doped Si nc. It is found that carrier injection, while needed to excite Si nc or Er ions through electron-hole recombination, at the same time produces an efficient non-radiative Auger de-excitation with trapped carriers. A strong light confinement and enhancement of Er emission at 1.54 μm in planar silicon-on-insulator waveguides containing a thin layer (slot) of SiO2 with Er-doped Si nc at the center of the Si core has been obtained. By measuring the guided photoluminescence from the cleaved edge of the sample, we have observed a more than fivefold enhancement of emission for the transverse magnetic mode over the transverse electric one at room temperature. Slot waveguides have also been integrated with a photonic crystal (PhC), consisting of a triangular lattice of holes. An enhancement by more than two orders of magnitude of the Er near-normal emission is observed when the transition is in resonance with an appropriate mode of the PhC slab. Finally, in order to increase the concentration of excitable Er ions, a completely different approach, based on Er disilicate thin films, has been explored. Under proper annealing conditions crystalline and chemically stable Er2Si2O7 films are obtained; these films exhibit a strong luminescence at 1.54 μm owing to the efficient reduction of the defect density. © 2008 Elsevier B.V. All rights reserved.

200 v superjunction N-type lateral insulated-gate bipolar transistor with improved latch-up characteristics

This paper evaluates the technique used to improve the latching characteristics of the 200 V n-type superjunction (SJ) lateral insulated-gate bipolar transistor (LIGBT) on a partial silicon-on-insulator. SJ IGBT devices are more prone to latch-up than standard IGBTs due to the presence of a strong pnp transistor with the p layer serving as an effective collector of holes. The initial SJ LIGBT design latches at about 23 V with a gate voltage of 5 V with a forward voltage drop (VON) of 2 V at 300 Acm2. The latch-up current density is 1100 Acm2. The latest SJ LIGBT design shows an increase in latch-up voltage close to 100 V without a significant penalty in VON. The latest design shows a latch-up current density of 1195 A cm2. The enhanced robustness against static latch-up leads to a better forward bias safe operating area. © 1963-2012 IEEE.

On the relation of slow feature analysis and Laplacian eigenmaps

The past decade has seen a rise of interest in Laplacian eigenmaps (LEMs) for nonlinear dimensionality reduction. LEMs have been used in spectral clustering, in semisupervised learning, and for providing efficient state representations for reinforcement learning. Here, we show that LEMs are closely related to slow feature analysis (SFA), a biologically inspired, unsupervised learning algorithm originally designed for learning invariant visual representations. We show that SFA can be interpreted as a function approximation of LEMs, where the topological neighborhoods required for LEMs are implicitly defined by the temporal structure of the data. Based on this relation, we propose a generalization of SFA to arbitrary neighborhood relations and demonstrate its applicability for spectral clustering. Finally, we review previous work with the goal of providing a unifying view on SFA and LEMs. © 2011 Massachusetts Institute of Technology.

Some remarks about periodic feedback stabilization

Periodic feedback stabilization is a very natural solution to overcome the topological obstructions which may occur when one tries to asymptotically (locally) stabilize a (locally) controllable nonlinear system around an equilibrium point. The object of this paper is to give a simple geometric interpretation of this fact, to show that one obtains a weakened form of those obstructions when periodic feedback is used, and to illustrate the success of periodic feedback stabilization on a representative system which contains a drift.

Enhanced infra-red emission from sub-millimeter microelectromechanical systems micro hotplates via inkjet deposited carbon nanoparticles and fullerenes

In this paper, we demonstrate a micro-inkjet printing technique as a reproducible post-process for the deposition of carbon nanoparticles and fullerene adlayers onto fully CMOS compatible micro-electro-mechanical silicon-on-insulator infrared (IR) light sources to enhance their infrared emission. We show experimentally a significant increase in the infrared emission efficiency of the coated emitters. We numerically validate these findings with models suggesting a dominant performance increase for wavelengths <5.5 μm. Here, the bimodal size distribution in the diameter of the carbon nanoparticles, relative to the fullerenes, is an effective mediator towards topologically enhanced emittance of our miniaturised emitters. A 90% improvement in IR emission power density has been shown which we have rationalised with an increase in the mean thickness of the deposited carbon nanoparticle adlayer. © 2013 AIP Publishing LLC.

Nanoscale plasmonic memristor with optical readout functionality.

We experimentally demonstrate for the first time a nanoscale resistive random access memory (RRAM) electronic device integrated with a plasmonic waveguide providing the functionality of optical readout. The device fabrication is based on silicon on insulator CMOS compatible approach of local oxidation of silicon, which enables the realization of RRAM and low optical loss channel photonic waveguide at the same fabrication step. This plasmonic device operates at telecom wavelength of 1.55 μm and can be used to optically read the logic state of a memory by measuring two distinct levels of optical transmission. The experimental characterization of the device shows optical bistable behavior between these levels of transmission in addition to well-defined hysteresis. We attribute the changes in the optical transmission to the creation of a nanoscale absorbing and scattering metallic filament in the amorphous silicon layer, where the plasmonic mode resides.

Locally oxidized silicon surface-plasmon Schottky detector for telecom regime.

We experimentally demonstrate an on-chip nanoscale silicon surface-plasmon Schottky photodetector based on internal photoemission process and operating at telecom wavelengths. The device is fabricated using a self-aligned approach of local-oxidation of silicon (LOCOS) on silicon on insulator substrate, which provides compatibility with standard complementary metal-oxide semiconductor technology and enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. Additionally, LOCOS technique allows avoiding lateral misalignment between the silicon surface and the metal layer to form a nanoscale Schottky contact. The fabricated devices showed enhanced detection capability for shorter wavelengths that is attributed to increased probability of the internal photoemission process. We found the responsivity of the nanodetector to be 0.25 and 13.3 mA/W for incident optical wavelengths of 1.55 and 1.31 μm, respectively. The presented device can be integrated with other nanophotonic and nanoplasmonic structures for the realization of monolithic opto-electronic circuitry on-chip.

Locally oxidized silicon surface-plasmon Schottky detector for telecom regime

We experimentally demonstrate an on-chip nanoscale silicon surface-plasmon Schottky photodetector based on internal photoemission process and operating at telecom wavelengths. The device is fabricated using a self-aligned approach of local-oxidation of silicon (LOCOS) on silicon on insulator substrate, which provides compatibility with standard complementary metal-oxide semiconductor technology and enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. Additionally, LOCOS technique allows avoiding lateral misalignment between the silicon surface and the metal layer to form a nanoscale Schottky contact. The fabricated devices showed enhanced detection capability for shorter wavelengths that is attributed to increased probability of the internal photoemission process. We found the responsivity of the nanodetector to be 0.25 and 13.3 mA/W for incident optical wavelengths of 1.55 and 1.31 μm, respectively. The presented device can be integrated with other nanophotonic and nanoplasmonic structures for the realization of monolithic opto-electronic circuitry on-chip. © 2011 American Chemical Society.

Stabilization of a complex perovskite superstructure under ambient conditions: Influence of cation composition and ordering, and evaluation as an SOFC cathode

Ba1.6Ca2.3Y1.1Fe5O13 is an Fe3+ oxide adopting a complex perovskite superstructure, which is an ordered intergrowth between the Ca2Fe2O5 and YBa2Fe3O8 structures featuring octahedral, square pyramidal, and tetrahedral B sites and three distinct A site environments. The distribution of A site cations was evaluated by combined neutron and X-ray powder diffraction. Consistent with the Fe3+ charge state, the material is an antiferromagnetic insulator with a Néel temperature of 480-485 °C and has a relatively low d.c. conductivity of 2.06 S cm-1 at 700 °C. The observed area specific resistance in symmetrical cell cathodes with the samarium-doped ceria electrolyte is 0.87 Ω cm2 at 700 °C, consistent with the square pyramidal Fe3+ layer favoring oxide ion formation and mobility in the oxygen reduction reaction. Density functional theory calculations reveal factors favoring the observed cation ordering and its influence on the electronic structure, in particular the frontier occupied and unoccupied electronic states. © 2010 American Chemical Society.

200V superjunction lateral IGBT fabricated on partial SOI

A 200V lateral insulated gate bipolar transistor (LIGBT) was successfully developed using lateral superjunction (SJ) in 0.18μm partial silicon on insulator (SOI) HV process. The results presented are based on extensive experimental measurements and numerical simulations. For an n-type lateral SJ LIGBT, the p layer in the SJ drift region helps in achieving uniform electric field distribution. Furthermore, the p-pillar contributes to the on-state current. Furthermore, the p-pillar contributes to sweep out holes during the turn-off process, thus leading to faster removal of plasma. To realize this device, one additional mask layer is required in the X-FAB 0.18μm partial SOI HV process. © 2013 IEEE.

A thermopile based SOI CMOS MEMS wall shear stress sensor

In this paper we present for the first time, a novel silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) MEMS thermal wall shear stress sensor based on a tungsten hot-film and three thermopiles. These devices have been fabricated using a commercial 1 μm SOI-CMOS process followed by a deep reactive ion etch (DRIE) back-etch step to create silicon oxide membranes under the hot-film for effective thermal isolation. The sensors show an excellent repeatability of electro-thermal characteristics and can be used to measure wall shear stress in both constant current anemometric as well as calorimetric modes. The sensors have been calibrated for wall shear stress measurement of air in the range of 0-0.48 Pa using a suction type, 2-D flow wind tunnel. The calibration results show that the sensors have a higher sensitivity (up to four times) in calorimetric mode compared to anemometric mode for wall shear stress lower than 0.3 Pa. © 2013 IEEE.

In-Situ grown carbon nanotubes for enhanced CO2 detection in non-dispersive-infra-red system

Non-dispersive-infra-red (NDIR) sensors are believed to be one of the most selective and robust solutions for CO2 detection, though cost prohibits their broader integration. In this paper we propose a commercially viable silicon-on-insulator (SOI) complementary metal-oxide (CMOS) micro-electro-mechanical (MEMS) technology for an IR thermal emitter. For the first time, vertically aligned multi walled carbon nanotubes (VA-MWCNTs) are suggested as a possible coating for the enhancement of the emission intensity of the optical source of a NDIR system. VA-MWCNTs have been grown in situ by chemical vapour deposition (CVD) exclusively on the heater area. Optical microscopy, scanning electron microscopy and Raman spectroscopy have been used to verify the quality of the VA-MWCNTs growth. The CNT-coated emitter demonstrated an increased response to CO2 of approx. 60%. Furthermore, we show that the VA-MWCNTs are stable up to temperatures of 500°C for up to 100 hours. © 2013 IEEE.