Voltage and Temperature Scalable Gate Delay and Slew Models Including Intra-Gate Variations

We investigate the feasibility of developing a comprehensive gate delay and slew models which incorporates output load, input edge slew, supply voltage, temperature, global process variations and local process variations all in the same model. We find that the standard polynomial models cannot handle such a large heterogeneous set of input variables. We instead use neural networks, which are well known for their ability to approximate any arbitrary continuous function. Our initial experiments with a small subset of standard cell gates of an industrial 65 nm library show promising results with error in mean less than 1%, error in standard deviation less than 3% and maximum error less than 11% as compared to SPICE for models covering 0.9- 1.1 V of supply, -40degC to 125degC of temperature, load, slew and global and local process parameters. Enhancing the conventional libraries to be voltage and temperature scalable with similar accuracy requires on an average 4x more SPICE characterization runs.

Voltage and Temperature Scalable Gate Delay and Slew Models Including Intra-Gate Variations

We investigate the feasibility of developing a comprehensive gate delay and slew models which incorporates output load, input edge slew, supply voltage, temperature, global process variations and local process variations all in the same model. We find that the standard polynomial models cannot handle such a large heterogeneous set of input variables. We instead use neural networks, which are well known for their ability to approximate any arbitrary continuous function. Our initial experiments with a small subset of standard cell gates of an industrial 65 nm library show promising results with error in mean less than 1%, error in standard deviation less than 3% and maximum error less than 11% as compared to SPICE for models covering 0.9- 1.1 V of supply, -40degC to 125degC of temperature, load, slew and global and local process parameters. Enhancing the conventional libraries to be voltage and temperature scalable with similar accuracy requires on an average 4x more SPICE characterization runs.

Land Surface Temperature with Land Cover Dynamics:Multi-Resolution, Spatio-Temporal Data Analysis of Greater Bangalore

Bangalore is experiencing unprecedented urbanisation in recent times due to concentrated developmental activities with impetus on IT (Information Technology) and BT (Biotechnology) sectors. The concentrated developmental activities has resulted in the increase in population and consequent pressure on infrastructure, natural resources, ultimately giving rise to a plethora of serious challenges such as urban flooding, climate change, etc. One of the perceived impact at local levels is the increase in sensible heat flux from the land surface to the atmosphere, which is also referred as heat island effect. In this communication, we report the changes in land surface temperature (LST) with respect to land cover changes during 1973 to 2007. A novel technique combining the information from sub-pixel class proportions with information from classified image (using signatures of the respective classes collected from the ground) has been used to achieve more reliable classification. The analysis showed positive correlation with the increase in paved surfaces and LST. 466% increase in paved surfaces (buildings, roads, etc.) has lead to the increase in LST by about 2 ºC during the last 2 decades, confirming urban heat island phenomenon. LSTs’ were relatively lower (~ 4 to 7 ºC) at land uses such as vegetation (parks/forests) and water bodies which act as heat sinks.

High-temperature deformation processing maps for a NiTiCu shape memory alloy

The properties of widely used Ni-Ti-based shape memory alloys (SMAs) are highly sensitive to the underlying microstructure. Hence, controlling the evolution of microstructure during high-temperature deformation becomes important. In this article, the ``processing maps'' approach is utilized to identify the combination of temperature and strain rate for thermomechanical processing of a Ni(42)Ti(50)Cu(8) SMA. Uniaxial compression experiments were conducted in the temperature range of 800-1050 degrees C and at strain rate range of 10(-3) and 10(2) s(-1). Two-dimensional power dissipation efficiency and instability maps have been generated and various deformation mechanisms, which operate in different temperature and strain rate regimes, were identified with the aid of the maps and complementary microstructural analysis of the deformed specimens. Results show that the safe window for industrial processing of this alloy is in the range of 800-850 degrees C and at 0.1 s(-1), which leads to grain refinement and strain-free grains. Regions of the instability were identified, which result in strained microstructure, which in turn can affect the performance of the SMA.

Size and temperature dependent stability and phase transformation in single-crystal zirconium nanowire

A novel size dependent FCC (face-centered-cubic) -> HCP (hexagonally-closed-pack) phase transformation and stability of an initial FCC zirconium nanowire are studied. FCC zirconium nanowires with cross-sectional dimensions < 20 are found unstable in nature, and they undergo a FCC -> HCP phase transformation, which is driven by tensile surface stress induced high internal compressive stresses. FCC nanowire with cross-sectional dimensions > 20 , in which surface stresses are not enough to drive the phase transformation, show meta-stability. In such a case, an external kinetic energy in the form of thermal heating is required to overcome the energy barrier and achieve FCC -> HCP phase transformation. The FCC-HCP transition pathway is also studied using Nudged Elastic Band (NEB) method, to further confirm the size dependent stability/metastability of Zr nanowires. We also show size dependent critical temperature, which is required for complete phase transformation of a metastable-FCC nanowire.