A comparative analysis of the characterization methods for submicron silicon waveguide propagation loss

An important parameter in integrated optical device is the propagation loss of the waveguide. Its characterization gives the information of the fabrication quality as well as the information of other passive devices on the chip as it is the basic building block of the passive devices. Although, over the last three decades many methods have been developed, there is not a single standard present yet. This paper presents a comparative analysis of the methods existing from the past as well as methods developed very recently in order to provide a complete picture of the pros and cons of different types of methods and from this comparison the best method is suggested according to the authors opinion. To support the claim, apart from the analytical comparison, this paper also presents a comparison performed with the experimental results between the suggested best method which is recently proposed by Massachusetts Institute of Technology (MIT) researchers based on undercoupled all-pass microring structure and the popular cut-back method.

Insulator-to-metal transition in vanadium supersaturated silicon: variable-range hopping and Kondo effect signatures

We report the observation of the insulator-to-metal transition in crystalline silicon samples supersaturated with vanadium. Ion implantation followed by pulsed laser melting and rapid resolidification produce high quality single-crystalline silicon samples with vanadium concentrations that exceed equilibrium values in more than 5 orders of magnitude. Temperature-dependent analysis of the conductivity and Hall mobility values for temperatures from 10K to 300K indicate that a transition from an insulating to a metallic phase is obtained at a vanadium concentration between 1.1 × 10^(20) and 1.3 × 10^(21) cm^(−3) . Samples in the insulating phase present a variable-range hopping transport mechanism with a Coulomb gap at the Fermi energy level. Electron wave function localization length increases from 61 to 82 nm as the vanadium concentration increases in the films, supporting the theory of impurity band merging from delocalization of levels states. On the metallic phase, electronic transport present a dispersion mechanism related with the Kondo effect, suggesting the presence of local magnetic moments in the vanadium supersaturated silicon material.

Isolating the photovoltaic junction: atomic layer deposited TiO2-RuO2 alloy Schottky contacts for silicon photoanodes

We synthesized nanoscale TiO2-RuO2 alloys by atomic layer deposition (ALD) that possess a high work function and are highly conductive. As such, they function as good Schottky contacts to extract photogenerated holes from n-type silicon while simultaneously interfacing with water oxidation catalysts. The ratio of TiO2 to RuO2 can be precisely controlled by the number of ALD cycles for each precursor. Increasing the composition above 16% Ru sets the electronic conductivity and the metal work function. No significant Ohmic loss for hole transport is measured as film thickness increases from 3 to 45 nm for alloy compositions >= 16% Ru. Silicon photoanodes with a 2 nm SiO2 layer that are coated by these alloy Schottky contacts having compositions in the range of 13-46% Ru exhibit average photovoltages of 525 mV, with a maximum photovoltage of 570 mV achieved. Depositing TiO2-RuO2 alloys on nSi sets a high effective work function for the Schottky junction with the semiconductor substrate, thus generating a large photovoltage that is isolated from the properties of an overlying oxygen evolution catalyst or protection layer.

Engineering interfacial silicon dioxide for improved metal-insulator-semiconductor silicon photoanode water splitting performance

Silicon photoanodes protected by atomic layer deposited (ALD) TiO2 show promise as components of water splitting devices that may enable the large-scale production of solar fuels and chemicals. Minimizing the resistance of the oxide corrosion protection layer is essential for fabricating efficient devices with good fill factor. Recent literature reports have shown that the interfacial SiO2 layer, interposed between the protective ALD-TiO2 and the Si anode, acts as a tunnel oxide that limits hole conduction from the photoabsorbing substrate to the surface oxygen evolution catalyst. Herein, we report a significant reduction of bilayer resistance, achieved by forming stable, ultrathin (<1.3 nm) SiO2 layers, allowing fabrication of water splitting photoanodes with hole conductances near the maximum achievable with the given catalyst and Si substrate. Three methods for controlling the SiO2 interlayer thickness on the Si(100) surface for ALD-TiO2 protected anodes were employed: (1) TiO2 deposition directly on an HF-etched Si(100) surface, (2) TiO2 deposition after SiO2 atomic layer deposition on an HF-etched Si(100) surface, and (3) oxygen scavenging, post-TiO2 deposition to decompose the SiO2 layer using a Ti overlayer. Each of these methods provides a progressively superior means of reliably thinning the interfacial SiO2 layer, enabling the fabrication of efficient and stable water oxidation silicon anodes.

Photonic packaging: transforming silicon photonic integrated circuits into photonic devices

Dedicated multi-project wafer (MPW) runs for photonic integrated circuits (PICs) from Si foundries mean that researchers and small-to-medium enterprises (SMEs) can now afford to design and fabricate Si photonic chips. While these bare Si-PICs are adequate for testing new device and circuit designs on a probe-station, they cannot be developed into prototype devices, or tested outside of the laboratory, without first packaging them into a durable module. Photonic packaging of PICs is significantly more challenging, and currently orders of magnitude more expensive, than electronic packaging, because it calls for robust micron-level alignment of optical components, precise real-time temperature control, and often a high degree of vertical and horizontal electrical integration. Photonic packaging is perhaps the most significant bottleneck in the development of commercially relevant integrated photonic devices. This article describes how the key optical, electrical, and thermal requirements of Si-PIC packaging can be met, and what further progress is needed before industrial scale-up can be achieved.

La innovación dentro del entorno de Silicon Valley

En este artículo se presentan los resultados de la visita a las empresas ubicadas en Silicon Valley, cuna de la innovación, con el fin de obtener un entendimiento integral del funcionamiento y factores claves de éxito de las starups y organizaciones que conforman este conglomerado empresarial.

Effect of silicon application to Eucalyptus camaldulensis on the population of Glycaspis brimblecombei (Hemiptera: Aphalaridae).

O uso do silício na área florestal tem aumentado recentemente, pois o elemento está relacionado a uma melhoria na resistência a insetos pragas. O psilídeo de concha, Glycaspis brimblecombei é encontrado em todas as regiões produtoras de eucalipto no Brasil. O efeito do silício aplicado em Eucalyptus camaldulensis, na população do psilídeo, foi estudado em dois ensaios. No primeiro experimento, as aplicações foram via solo (silicato de cálcio) e foliar (silicato de potássio) em uma plantação de nove meses. No segundo experimento, este mineral foi aplicado em mudas de eucalipto, no substrato ou sobre as folhas. Mensalmente, durante 24 meses, ovos e imaturos de G. brimblecombei foram amostrados nas folhas. A altura das plantas foi medida com 9, 12, 16 e 24 meses (experimento 1) e, aos 4, 8, 12 e 24 meses (experimento 2) após a aplicação dos tratamentos. O número de ovos e de imaturos foram menores nos períodos de maior precipitação, indicando menos ataque dos psilídeos durante a estação chuvosa. A população psilídeo foi menor nos tratamentos com aplicação de silício tanto foliar como via solo. Nenhuma diferença significativa foi encontrada na altura de plantas de E. camaldulensis.

Silicon nanocrystals tailored for bioimaging and energy conversion

This thesis focus is the development of hybrid organic-inorganic systems based on Silicon Nanocrystals (SiNCs) with possible applications in the field of bioimaging and solar energy conversion. SiNCs were engineered thanks to the realization of a strong covalent Si-C bond on their surface, which allowed us to disperse them in different solvents with different final purpose. Chapter 1 introduces the basic properties of nanomaterials. Chapter 2 describes all the synthetic procedures to obtain the organic molecules-functionalized SiNCs. Chapter 3 illustrates an organic-inorganic antenna system based on SiNCs conjugated with diphenylanthracene (DPA) photoactive molecules, which was also embedded into Luminescent Solar Concentrators (LSC) made of a polymeric matrix. The optical and photovoltaic performances of this device were compared with the ones of a LSC embedded with a physical mixture made of SiNCs plus DPA at the same concentrations of the two components in the covalent system. Chapter 4 shows many different techniques to functionalize SiNCs with polyethylene glycol (PEG) chains in order to make them dispersible in water, for biomedical imaging applications. Chapter 5 presents the synthesis of dyes and/or SiNCs loaded Polymer Nanoparticles (PNPs) capable of excitation energy transfer (EET) mechanism. Chapter 6 is focused on the realization of photo-switchable systems based on azobenzene derivatives-functionalized SiNCs. These organic-inorganic hybrid materials were studied to possibly obtain a new light-driven response of SiNCs. In the end, chapter 7 reports the activity I followed in America, at The University of Texas at Austin, in the laboratory led by the professor Brian Korgel. Here I studied and compared the properties of high temperature hydrosilylated SiNCs and room temperature, radical promoted, hydrosilylated SiNCs.

Models and Simulations of Diamond-like Carbon for large-area high voltage power diodes

Silicon-based discrete high-power devices need to be designed with optimal performance up to several thousand volts and amperes to reach power ratings ranging from few kWs to beyond the 1 GW mark. To this purpose, a key element is the improvement of the junction termination (JT) since it allows to drastically reduce surface electric field peaks which may lead to an earlier device failure. This thesis will be mostly focused on the negative bevel termination which from several years constitutes a standard processing step in bipolar production lines. A simple methodology to realize its counterpart, a planar JT with variation of the lateral doping concentration (VLD) will be also described. On the JT a thin layer of a semi insulating material is usually deposited, which acts as passivation layer reducing the interface defects and contributing to increase the device reliability. A thorough understanding of how the passivation layer properties affect the breakdown voltage and the leakage current of a fast-recovery diode is fundamental to preserve the ideal termination effect and provide a stable blocking capability. More recently, amorphous carbon, also called diamond-like carbon (DLC), has been used as a robust surface passivation material. By using a commercial TCAD tool, a detailed physical explanation of DLC electrostatic and transport properties has been provided. The proposed approach is able to predict the breakdown voltage and the leakage current of a negative beveled power diode passivated with DLC as confirmed by the successfully validation against the available experiments. In addition, the VLD JT proposed to overcome the limitation of the negative bevel architecture has been simulated showing a breakdown voltage very close to the ideal one with a much smaller area consumption. Finally, the effect of a low junction depth on the formation of current filaments has been analyzed by performing reverse-recovery simulations.

Synthesis and electronic properties of luminescent silicon nanocrystals and copper indium sulphide quantum dots

In the last decades, nanomaterials, and in particular semiconducting nanoparticles (or quantum dots), have gained increasing attention due to their controllable optical properties and potential applications. Silicon nanoparticles (also called silicon nanocrystals, SiNCs) have been extensively studied in the last years, due to their physical and chemical properties which render them a valid alternative to conventional quantum dots. During my PhD studies I have planned new synthetical routes to obtain SiNCs functionalised with molecules which could ameliorate the properties of the nanoparticle. However, this was certainly challenging, because SiNCs are very susceptible to many reagents and conditions that are often used in organic synthesis. They can be irreversibly quenched in the presence of alkalis, they can be damaged in the presence of oxidants, they can modify their optical properties in the presence of many nitrogen-containing compounds, metal complexes or simple organic molecules. If their surface is not well-passivated, the oxygen can introduce defect states, or they can aggregate and precipitate in several solvents. Therefore, I was able to functionalise SiNCs with different ligands: chromophores, amines, carboxylic acids, poly(ethylene)glycol, even ameliorating functionalisation strategies that already existed. This thesis will collect the experimental procedures used to synthesize silicon nanocrystals, the strategies adopted to functionalise effectively the nanoparticle with different types of organic molecules, and the characterisation of their surface, physical properties and luminescence (mostly photogenerated, but also electrochemigenerated). I also spent a period of 7 months in Leeds (UK), where I managed to learn how to synthesize other cadmium-free quantum dots made of copper, indium and sulphur (CIS QDs). During my last year of PhD, I focused on their functionalisation by ligand exchange techniques, yielding the first example of light-harvesting antenna based on those quantum dots. Part of this thesis is dedicated to them.

Studio e caratterizzazione di sensori Silicon PhotoMultiplier (SiPM) per applicazioni di timing nell'esperimento ALICE 3

Lo studio che verrà presentato in questo lavoro di tesi riguarda la caratterizzazione di Silicon PhotoMultiplier (SiPM): essi sono sensori a semiconduttore che sono stati proposti per la realizzazione del layer Time-Of-Flight (TOF) del nuovo esperimento proposto ad LHC, ALICE 3. Sono stati testati sensori diversi, sia in termini di casa di fabbricazione (FBK o HPK), sia in termini di struttura; in particolare, i modelli a disposizione di produzione FBK sono singoli SPAD, singoli SiPM e mini-array di SiPM, mentre i modelli HPK sono tutti singoli SiPM. La caratterizzazione è avvenuta mediante misure di corrente e capacità del sensore al variare della tensione (curve IV e curve CV); l'obiettivo primario è studiare e confrontare tali andamenti, in modo da poter selezionare i sensori con caratteristiche simili per la costruzione del layer del TOF. Si è osservato che sensori della stessa casa produttrice e con la stessa struttura interna esibiscono comportamenti quasi sovrapponibili, dimostrando in generale una ottima uniformità.

Characterization of innovative kerfless cutting of monocrystalline silicon wafers for photovoltaic applications

Nowadays renewable energies are a hot research topic, and the goal is to improve cell efficiency and reduce production costs, aiming to make the use of photovoltaics increasingly widespread and convenient. Monocrystalline silicon solar cells are leaders in the photovoltaic market. However, market-established cutting techniques produce a consistent amount of material waste when cutting ingots into wafers. The“Stress-induced LIft-Off Method” (SLIM) is emerging in recent years as an alternative, more sustainable separation technique, which reduces material loss and can lead to obtaining increasingly thinner wafers, further reducing the required amount of silicon. This thesis presents the micro-characterization of the separated wafers with the SLIM technique. The wafers were obtained with a two-step procedure. First, a layer of defects was induced in the silicon using ultra-short medium-infrared laser pulses. Then, the material was deposited on one of the sides and induced stress in the silicon, such as to further weaken it. In this way, only rapid cooling is required for detachment to occur. The obtained results indicate that the SLIM-cut technique halves the minority carriers’ lifetime. There is no amorphization, crystal disorder or high-pressure phases. However, changes in the Raman spectra suggest that tensile stress may have been produced on these surface layers by the separation process. The AFM topography highlights surface irregularities, which may be removed with a polishing step. The surface also shows laser-modified regions, which are evident in SEM images, but not in AFM topographies, suggesting a charging effect due to electron bombardment. Lastly, the electrical characterization by conductive AFM lacks any changes in the conductive behaviour of the material where the laser-modified areas should be located. In conclusion, these preliminary results are promising to carry out a systematic characterization of this technique of this innovative SLIM technique.

The Applicability Of Ordered Mesoporous Sba-15 And Its Hydrophobic Glutaraldehyde-bridge Derivative To Improve Ibuprofen-loading In Releasing System.

The mesoporous SBA-15 silica with uniform hexagonal pore, narrow pore size distribution and tuneable pore diameter was organofunctionalized with glutaraldehyde-bridged silylating agent. The precursor and its derivative silicas were ibuprofen-loaded for controlled delivery in simulated biological fluids. The synthesized silicas were characterized by elemental analysis, infrared spectroscopy, (13)C and (29)Si solid state NMR spectroscopy, nitrogen adsorption, X-ray diffractometry, thermogravimetry and scanning electron microscopy. Surface functionalization with amine containing bridged hydrophobic structure resulted in significantly decreased surface area from 802.4 to 63.0 m(2) g(-1) and pore diameter 8.0-6.0 nm, which ultimately increased the drug-loading capacity from 18.0% up to 28.3% and a very slow release rate of ibuprofen over the period of 72.5h. The in vitro drug release demonstrated that SBA-15 presented the fastest release from 25% to 27% and SBA-15GA gave near 10% of drug release in all fluids during 72.5 h. The Korsmeyer-Peppas model better fits the release data with the Fickian diffusion mechanism and zero order kinetics for synthesized mesoporous silicas. Both pore sizes and hydrophobicity influenced the rate of the release process, indicating that the chemically modified silica can be suggested to design formulation of slow and constant release over a defined period, to avoid repeated administration.

Evaluation Of The Effect Of Different Methods Of Microabrasion And Polishing On Surface Roughness Of Dental Enamel.

The microabrasion technique of enamel consists of selectively abrading the discolored areas or causing superficial structural changes in a selective way. In microabrasion technique, abrasive products associated with acids are used, and the evaluation of enamel roughness after this treatment, as well as surface polishing, is necessary. This in-vitro study evaluated the enamel roughness after microabrasion, followed by different polishing techniques. Roughness analyses were performed before microabrasion (L1), after microabrasion (L2), and after polishing (L3).Thus, 60 bovine incisive teeth divided into two groups were selected (n=30): G1- 37% phosphoric acid (37%) (Dentsply) and pumice; G2- hydrochloric acid (6.6%) associated with silicon carbide (Opalustre - Ultradent). Thereafter, the groups were divided into three sub-groups (n=10), according to the system of polishing: A - Fine and superfine granulation aluminum oxide discs (SofLex 3M); B - Diamond Paste (FGM) associated with felt discs (FGM); C - Silicone tips (Enhance - Dentsply). A PROC MIXED procedure was applied after data exploratory analysis, as well as the Tukey-Kramer test (5%). No statistical differences were found between G1 and G2 groups. L2 differed statistically from L1 and showed superior amounts of roughness. Differences in the amounts of post-polishing roughness for specific groups (1A, 2B, and 1C) arose, which demonstrated less roughness in L3 and differed statistically from L2 in the polishing system. All products increased enamel roughness, and the effectiveness of the polishing systems was dependent upon the abrasive used.