Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques

The composition and stain distributions in the InGaN epitaxial films are jointly measured by employing various x-ray diffraction (XRD) techniques, including out-of-plane XRD at special planes, in-plane grazing incidence XRD, and reciprocal space mapping (RSM). It is confirmed that the measurement of (204) reflection allows a rapid access to estimate the composition without considering the influence of biaxial strain. The two-dimensional RSM checks composition and degree of strain relaxation jointly, revealing an inhomogeneous strain distribution profile along the growth direction. As the film thickness increases from 100 nm to 450 nm, the strain status of InGaN films gradually transfers from almost fully strained to fully relaxed state and then more in atoms incorporate into the film, while the near-interface region of InGaN films remains pseudomorphic to GaN.

Lateral periodicity in highly-strained (GaIn)As/Ga(PAs) superlattices investigated by X-ray scattering techniques

In this work we investigate the lateral periodicity of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of X-ray scattering techniques. The multilayers were grown by metalorganic Vapour phase epitaxy on (001)GaAs substrates, which were intentionally off-oriented towards the [011]-direction. The substrate off-orientation and the strain distribution was found to affect the structural properties of the superlattices inducing the generation of laterally ordered macrosteps. Several high-resolution triple-crystal reciprocal space maps, which were recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction and contour maps of the specular reflected beam collected in the vicinity of the (000) reciprocal lattice point, are reported and discussed. The reciprocal space maps clearly show a two-dimensional periodicity of the X-ray peak intensity distribution which can be ascribed to the superlattice periodicity in the direction of the surface normal and to a lateral periodicity in a crystallographic direction coinciding with the miscut orientation. The distribution and correlation of the vertical as well as of the lateral interface roughness was investigated by specular reflectivity and diffuse scattering measurements. Our results show that the morphology of the roughness is influenced by the off-orientation angle and can be described by a 2-dimensional waviness.

DEVELOPMENT OF CURRENT-BASED MICROSCOPIC DEFECT ANALYSIS-METHODS AND ASSOCIATED OPTICAL FILLING TECHNIQUES FOR THE INVESTIGATION ON HIGHLY IRRADIATED HIGH-RESISTIVITY SILICON DETECTORS

Current based microscopic defect analysis methods such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) have been further developed in accordance with the need for the defect analysis of highly irradiated (Phi(n) > 10(13) n/cm(2)) high resistivity silicon detectors. The new I-DLTS/TSC system has a temperature range of 8 K less than or equal to T less than or equal to 450 K and a high sensitivity that can detect a defect concentration of less than 10(10)/cm(3) (background noise as low as 10 fA). A new filling method using different wavelength laser illumination has been applied, which is more efficient and suitable than the traditional voltage pulse filling. It has been found that the filling of a defect level depends on such factors as the total concentration of free carriers generated or injected, the penetration length of the laser (laser wavelength), the temperature at which the filling is taking place, as well as the decay time after the filling (but before the measurement). The mechanism of the defect filling can be explained by the competition between trapping and detrapping of defect levels, possible capture cross section temperature dependence, and interaction among various defect levels in terms of charge transferring. Optimum defect filling conditions have been suggested for highly irradiated high resistivity silicon detectors.

Numerical analysis of four-wave-mixing based multichannel wavelength conversion techniques in fibers

We numerically investigate four-wave-mixing (FWM) based multichannel wavelength conversion for amplitude-modulated signals, phase-modulated signals, together with mixed amplitude and phase modulated signals. This paper also discusses the influence of stimulated Brillouin scattering (SBS) effects on high-efficiency FWM-based wavelength conversion applications. Our simulation results show that DPSK signals are more suitable for FWM-based multichannel wavelength conversion because the OOK signals will suffer from the inevitable datapattern-dependent pump depletion. In future applications, when the modulation format is partially upgraded from OOK to DPSK, the influence of OOK signals on the updated DPSK signals must be considered when using multichannel wavelength conversion. This influence becomes severe with the increase of OOK channel number. It can be concluded that DPSK signals are more appropriate for both transmission and multichannel wavelength conversion,especially in long haul and high bit-rate system.

Solving MIN UR problem by triangle evolution algorithm with archiving and niche techniques

In this paper, as an extension of minimum unsatisfied linear relations problem (MIN ULR), the minimum unsatisfied relations (MIN UR) problem is investigated. A triangle evolution algorithm with archiving and niche techniques is proposed for MIN UR problem. Different with algorithms in literature, it solves MIN problem directly, rather than transforming it into many sub-problems. The proposed algorithm is also applicable for the special case of MIN UR, in which it involves some mandatory relations. Numerical results show that the algorithm is effective for MIN UR problem and it outperforms Sadegh's algorithm in sense of the resulted minimum inconsistency number, even though the test problems are linear.

Investigation of ion-atom collision dynamics through imaging techniques

The principle and technique details of recoil ion momentum imaging are discussed and summarized. The recoil ion momentum spectroscopy built at the Institute of Modern Physics (Lanzhou) is presented. The first results obtained at the setup are analyzed. For 30 keV He2+ on He collision, it is found that the capture of single electron occurs dominantly into the first excited states, and the related scattering angle results show that the ground state capture occurs at large impact parameters, while the capture into excited states occurs at small impact parameters. The results manifest the collision dynamics for the sub-femto-second process can be studied through the techniques uniquely. Finally, the future possibilities of applications of the recoil ion momentum spectroscopy in other fields are outlined.

The mechanism studies of ethanol oxidation on PdO catalysts by TPSR techniques

The paper studies the direct oxidation of ethanol and CO on PdO/Ce0.75Zr0.25O2 and Ce(0.75)Zr(0.2)5O(2) catalysts. Characterization of catalysts is carried out by temperature-programmed desorption (TPD), temperature-programmed surface reaction (TPSR) techniques to correlate with catalytic properties and the effect of supports on PdO. The simple Ce0.75Zr0.25O2 is in less active for ethanol and CO oxidation. After loaded with PdO, the catalytic activity enhances effectively. Combined the ethanol and CO oxidation activity with CO-TPD and ethanol-TPSR profiles, we can find the more intensive of CO2 desorption peaks, the higher it is for the oxidation of CO and ethanol. Conversion versus yield plot shows the acetaldehyde is the primary product, the secondary products are acetic acid, ethyl acetate and ethylene, and the final product is CO2. A simplified reaction scheme (not surface mechanism) is suggested that ethanol is first oxidized to form intermediate of acetaldehyde, then acetic acid, ethyl acetate and ethylene formed going with the formation of acetaldehyde, acetic acid, ethyl acetate; finally these byproducts are further oxidized to produce CO2. PdO/Ce0.75Zr0.25O2 catalyst has much higher catalytic activity not only for the oxidation of ethanol but also for CO oxidation. Thus the CO poison effect on PdO/Ce0.75Zr0.25O2 catalysts can be decreased and they have the feasibility for application in direct alcohol fuel cell (DAFC) with high efficiency.