907 resultados para native language (L1)
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A InGaAsP/InP self-aligned, native oxidized buried heterostructure (BH) distributed feedback (DFB) laser is proposed. It is as easy to process as the ridge waveguide DFB laser and has superior performance. The current aperture can be easily controlled without selective regrowth. The laser exhibits a low threshold of 5.0 mA with 36 dB side mode suppression ratio at the emission wavelength of 1.562 mu m. It emits in a single lobe with full width at half maximum angles of 33.6 degrees and 42.6 degrees for the lateral and vertical fields, respectively. Its beam is more circular than that of the as-grown BH laser because the lower refractive index of oxide compared to the as-grown layer and results in a larger lateral optical confinement. Its characteristic temperature (T-0) is 50 K at room temperature but increases in value at the higher temperature range. (C) 2000 American Institute of Physics. [S0003-6951(00)00812-3].
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A novel idea of InAlAs native oxide utilized to replace the p-n-p-n thyristor blocking layer and improve the high-temperature performance of buried heterostructure InGaAsP-InP laser is first proposed and demonstrated. A characteristic temperature (T-0) of 50 K is achieved from an InA1As native oxide buried heterostructure (NOBH) InGaAsP-InP multiquantum-well laser with 1.5-mu m-wide diode leakage passage path. The threshold current and slope efficiency of NOBH laser changes from 5.6 mA, 0.23 mW/mA to 28 mA, 0.11 mW/mA with the operating temperature changing from 20 degrees C to 100 degrees C. It is comparable to conventional p-n reverse biased junction BH laser with minimized diode leakage current, and is much better than the buried ridge strip with proton implanted laterally confinement laser.
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An InAlAs native oxide is used to replace the p-n reverse-biased junction in a conventional buried heterostructure InP-based laser. This technique reduces the number of regrowth steps and eliminates leakage current under high-temperature operation. The InAlAs native oxide buried heterostructure (NOBH) laser with strain-compensated InGaAsP/InP multiple quantum well active layers has a threshold current of 5.6 mA, a slope efficiency of 0.23 mW/mA, and a linear power up to 22.5 mW with a HR-coated facet. It exhibits single transverse mode with lasing wavelength at 1.532 mu m. A characteristic temperature (T-0) of 50 K is obtained from the NOBH laser with a nonoptimized oxide layer width. (C) 1998 American Institute of Physics. [S0003-6951(98)01352-7].
Resumo:
Hall effect, photoluminescence (PL), infrared absorption, deep level transient spectroscopy (DLTS), and Raman scattering have been used to study property and defects of ZnO single crystal grown by a chemical vapor transport method (CVT). As-grown ZnO is N type with free electron density Of 10(16)-10(17)cm(-3). It has a slight increase after 900 degrees C annealing in oxygen ambient. The DLTS measurement revealed four deep level defects with energy at 0.30eV, 0.50eV, 0.68eV and 0.90eV in the as-grown ZnO sample, respectively. After the high temperature annealing, only the 0.5eV defect survive and has a concentration increase. PL results of the as-grown and annealed ZnO indicate that the well-known green emission disappear after the annealing. The result suggests a correlation between the 0.68eV defect and the green PL peak. Results of P-doped ZnO were also compared with the undoped ZnO sample. The nature of the defects and their influence on the material property have been discussed.
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This paper presents a wide tuning range CMOS frequency synthesizer for dual-band GPS receiver, which has been fabricated in a standard 0.18-um RF CMOS process. With a high Q on-chip inductor, the wide-band VCO shows a tuning range from 2 to 3.6GHz to cover 2.45GHz and 3.14GHz in case of process corner or temperature variation, with a current consumption varying accordingly from 0.8mA to 0.4mA, from a 1.8V supply voltage. The measurement results show that the whole frequency synthesizer costs a very low power consumption of 5.6mW working at L I band with in-band phase noise less than -82dBc/Hz and out-of-band phase noise about -112 dBc/Hz at 1MHz offset from a 3.142GHz carrier.
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A Function Definition Language (FDL) is presented. Though designed for describing specifications, FDL is also a general-purpose functional programming language. It uses context-free language as data type, supports pattern matching definition of functions, offers several function definition forms, and is executable. It is shown that FDL has strong expressiveness, is easy to use and describes algorithms concisely and naturally. An interpreter of FDL is introduced. Experiments and discussion are included.
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The formal specification language LFC was designed to support formal specification acquisition. However, it is yet suited to be used as a meta-language for specifying programming language processing. This paper introduces LFC as a meta-language, and compares it with ASF+SDF, an algebraic specification formalism that can also be used to programming languages.
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We propose a new functional programming language(FPL) which differs in some aspects from most well known FPLs[l].We descrihc the prohlmm domain,the language,explain why we need it.
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Native Oxide AlAs layer were employed to block the current injection from the tup anode. The luminous intensity exceeded 75 mcd of the LED chip with native oxide AlAs layer sandwiched 5 mu m AlGaAs current spreading layer under 20 mA current injection. Electrical and optical properties the LED chip and plastically sealed lamp were measured. Aging of the LED chip and lamp were performed under 70 degrees C and room temperature, Experiment results shown that there is no apparent effect of the native oxided AlAs layer and the process on the reliability of the LED devices.
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ACM SIGIR; ACM SIGWEB
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This paper presents results of 2 years (from January 2005 to December 2006) of measurement of N2O fluxes from the native and grazed Leymus chinensis (LC) steppes in Inner Mongolia, China using the static opaque chamber method. The measurement was at a frequency of twice per month in the growing season and once per month in the non-growing season. In addition, the possible effect of water-heat factors on N2O fluxes was statistically analyzed. The results indicated that there were distinct seasonal patterns in N2O fluxes with large fluxes in spring, summer, and autumn but negative fluxes in winter. The annual net emission of N2O ranging from 0.24 to 0.30 kg N2O-N ha(-1) and from 0.06 to 0.26 kg N2O-N ha(-1) from the native and grazed LC steppe, respectively. Grazing activities suppressed N2O production. In the growing season, soil moisture was the primary driving factor of N2O fluxes. The high seasonal variation of N2O fluxes was regulated by the distribution of effective rainfall, rather than precipitation intensity. Air temperature or soil temperature at 0, 5, and 10 cm depth was the most restricting factor of N2O fluxes in the non-growing season.