Growth, osmoregulation and ion accumulation in the coastal halophyte Arthrocnemum indicum under field conditions

Life cycle and population biology of a perennial halophyte Arthrocnemum indicum Willd, was studied from February 1992 to January 1993. During the 12 months, the population was exposed to great variations in soil salinity from 35 to 58 ms/cm2 and soil moisture ranging from flood to drought levels. Seasonal changes in dry weight are directly related to soil salinity stress. When salinity levels become low, the dry matter production increases. A little increase in dry weight from April to July indicates that more negative soil water potentials were limiting plant growth. Proline content increased considerably during the dry season with a corresponding increase in salinity. Water soluble oxalate did not vary much with changes in salinity.

TIME RESOLVED REFLECTIVITY MEASUREMENTS APPLIED TO RAPID ISOTHERMAL ANNEALING OF ION IMPLANTED SILICON.

The annealing of ion implantation damage in silicon by rapid isothermal heating has been monitored by the time resolved reflectivity (TRR) method. This technique was applied simultaneously at a wavelength of 632. 8nm and also at 1152nm, where the optical absorption coefficient of silicon is less. The two wavelength method simplifies the interpretation of TRR results, extends the measurement depth and allows good resolution of the position of the interface between amorphous and crystalline silicon. The regrowth of amorphous layers in silicon, created by self implantation and implanted with electrically active impurities, was observed. Regrowth in rapid isothermal annealing occurs during the heating up stage of typical thermal cycles. Impurities such as B, P, and As increase the regrowth rate in a manner consistent with a vacancy model for regrowth. The maximum regrowth rate in boron implanted silicon is limited by the solid solubility.

Mode control in vertical-cavity surface-emitting lasers by post-processing using focused ion-beaih etching

Single-mode emission is achieved in previously multimode gain-guided vertical-cavity surface-emitting lasers (VCSEL's) by localized modification of the mirror reflectivity using focused ion-beam etching. Reflectivity engineering is also demonstrated to suppress transverse mode emission in an oxide-confined device, reducing the spectral width from 1.2 nm to less than 0.5 nm.

Mechanism of polarization pinning in vertical cavity surface emitting lasers using focused ion beam etching

Photoluminescence experiments have identified strain as the origin for polarization pinning in vertical cavity surface emitting lasers post-processed by focused ion beam etching. Theoretical models were applied to deduce the strain in devices. Post-annealing was used to optimize polarization pinning.

High power laser with integrated lens using focused ion beam etching

In this study, a collimating lens is introduced at the output facet of a tapered waveguide laser to compensate for the divergence of the optical mode. The collimating lens is shown to enhance the laser efficiency while simultaneously reducing the far field divergence.

Isotropic constitutive models for metallic foams

The yield behaviour of two aluminum alloy foams (Alporas and Duocel) has been investigated for a range of axisymmetric compressive stress states. The initial yield surface has been measured, and the evolution of the yield surface has been explored for uniaxial and hydrostatic stress paths. It is found that the hydrostatic yield strength is of similar magnitude to the uniaxial yield strength. The yield surfaces are of quadratic shape in the stress space of mean stress versus effective stress, and evolve without corner formation. Two phenomenological isotropic constitutive models for the plastic behaviour are proposed. The first is based on a geometrically self-similar yield surface while the second is more complex and allows for a change in shape of the yield surface due to differential hardening along the hydrostatic and deviatoric axes. Good agreement is observed between the experimentally measured stress versus strain responses and the predictions of the models.

Focused ion beam etching of GaN

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching - a well-established technique for optical mask repair and for IC failure analysis and repair - without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5×10 -4μm3/pC. At a current of 3nA, for example, this corresponds to an etch rate of 1.05μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1μm. Changes in the roughness of the etched surface plane stay below 8nm.