925 resultados para logic gate


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"The following is my understanding of scripture teaching in harmony with shaker principles and practice. A.G. Hollister."--Pref.

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This thesis describes a collection of studies into the electrical response of a III-V MOS stack comprising metal/GaGdO/GaAs layers as a function of fabrication process variables and the findings of those studies. As a result of this work, areas of improvement in the gate process module of a III-V heterostructure MOSFET were identified. Compared to traditional bulk silicon MOSFET design, one featuring a III-V channel heterostructure with a high-dielectric-constant oxide as the gate insulator provides numerous benefits, for example: the insulator can be made thicker for the same capacitance, the operating voltage can be made lower for the same current output, and improved output characteristics can be achieved without reducing the channel length further. It is known that transistors composed of III-V materials are most susceptible to damage induced by radiation and plasma processing. These devices utilise sub-10 nm gate dielectric films, which are prone to contamination, degradation and damage. Therefore, throughout the course of this work, process damage and contamination issues, as well as various techniques to mitigate or prevent those have been investigated through comparative studies of III-V MOS capacitors and transistors comprising various forms of metal gates, various thicknesses of GaGdO dielectric, and a number of GaAs-based semiconductor layer structures. Transistors which were fabricated before this work commenced, showed problems with threshold voltage control. Specifically, MOSFETs designed for normally-off (VTH > 0) operation exhibited below-zero threshold voltages. With the results obtained during this work, it was possible to gain an understanding of why the transistor threshold voltage shifts as the gate length decreases and of what pulls the threshold voltage downwards preventing normally-off device operation. Two main culprits for the negative VTH shift were found. The first was radiation damage induced by the gate metal deposition process, which can be prevented by slowing down the deposition rate. The second was the layer of gold added on top of platinum in the gate metal stack which reduces the effective work function of the whole gate due to its electronegativity properties. Since the device was designed for a platinum-only gate, this could explain the below zero VTH. This could be prevented either by using a platinum-only gate, or by matching the layer structure design and the actual gate metal used for the future devices. Post-metallisation thermal anneal was shown to mitigate both these effects. However, if post-metallisation annealing is used, care should be taken to ensure it is performed before the ohmic contacts are formed as the thermal treatment was shown to degrade the source/drain contacts. In addition, the programme of studies this thesis describes, also found that if the gate contact is deposited before the source/drain contacts, it causes a shift in threshold voltage towards negative values as the gate length decreases, because the ohmic contact anneal process affects the properties of the underlying material differently depending on whether it is covered with the gate metal or not. In terms of surface contamination; this work found that it causes device-to-device parameter variation, and a plasma clean is therefore essential. This work also demonstrated that the parasitic capacitances in the system, namely the contact periphery dependent gate-ohmic capacitance, plays a significant role in the total gate capacitance. This is true to such an extent that reducing the distance between the gate and the source/drain ohmic contacts in the device would help with shifting the threshold voltages closely towards the designed values. The findings made available by the collection of experiments performed for this work have two major applications. Firstly, these findings provide useful data in the study of the possible phenomena taking place inside the metal/GaGdO/GaAs layers and interfaces as the result of chemical processes applied to it. In addition, these findings allow recommendations as to how to best approach fabrication of devices utilising these layers.

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Conventional Si complementary-metal-oxide-semiconductor (CMOS) scaling is fast approaching its limits. The extension of the logic device roadmap for future enhancements in transistor performance requires non-Si materials and new device architectures. III-V materials, due to their superior electron transport properties, are well poised to replace Si as the channel material beyond the 10nm technology node to mitigate the performance loss of Si transistors from further reductions in supply voltage to minimise power dissipation in logic circuits. However several key challenges, including a high quality dielectric/III-V gate stack, a low-resistance source/drain (S/D) technology, heterointegration onto a Si platform and a viable III-V p-metal-oxide-semiconductor field-effect-transistor (MOSFET), need to be addressed before III-Vs can be employed in CMOS. This Thesis specifically addressed the development and demonstration of planar III-V p-MOSFETs, to complement the n-MOSFET, thereby enabling an all III-V CMOS technology to be realised. This work explored the application of InGaAs and InGaSb material systems as the channel, in conjunction with Al2O3/metal gate stacks, for p-MOSFET development based on the buried-channel flatband device architecture. The body of work undertaken comprised material development, process module development and integration into a robust fabrication flow for the demonstration of p-channel devices. The parameter space in the design of the device layer structure, based around the III-V channel/barrier material options of Inx≥0.53Ga1-xAs/In0.52Al0.48As and Inx≥0.1Ga1-xSb/AlSb, was systematically examined to improve hole channel transport. A mobility of 433 cm2/Vs, the highest room temperature hole mobility of any InGaAs quantum-well channel reported to date, was obtained for the In0.85Ga0.15As (2.1% strain) structure. S/D ohmic contacts were developed based on thermally annealed Au/Zn/Au metallisation and validated using transmission line model test structures. The effects of metallisation thickness, diffusion barriers and de-oxidation conditions were examined. Contacts to InGaSb-channel structures were found to be sensitive to de-oxidation conditions. A fabrication process, based on a lithographically-aligned double ohmic patterning approach, was realised for deep submicron gate-to-source/drain gap (Lside) scaling to minimise the access resistance, thereby mitigating the effects of parasitic S/D series resistance on transistor performance. The developed process yielded gaps as small as 20nm. For high-k integration on GaSb, ex-situ ammonium sulphide ((NH4)2S) treatments, in the range 1%-22%, for 10min at 295K were systematically explored for improving the electrical properties of the Al2O3/GaSb interface. Electrical and physical characterisation indicated the 1% treatment to be most effective with interface trap densities in the range of 4 - 10×1012cm-2eV-1 in the lower half of the bandgap. An extended study, comprising additional immersion times at each sulphide concentration, was further undertaken to determine the surface roughness and the etching nature of the treatments on GaSb. A number of p-MOSFETs based on III-V-channels with the most promising hole transport and integration of the developed process modules were successfully demonstrated in this work. Although the non-inverted InGaAs-channel devices showed good current modulation and switch-off characteristics, several aspects of performance were non-ideal; depletion-mode operation, modest drive current (Id,sat=1.14mA/mm), double peaked transconductance (gm=1.06mS/mm), high subthreshold swing (SS=301mV/dec) and high on-resistance (Ron=845kΩ.μm). Despite demonstrating substantial improvement in the on-state metrics of Id,sat (11×), gm (5.5×) and Ron (5.6×), inverted devices did not switch-off. Scaling gate-to-source/drain gap (Lside) from 1μm down to 70nm improved Id,sat (72.4mA/mm) by a factor of 3.6 and gm (25.8mS/mm) by a factor of 4.1 in inverted InGaAs-channel devices. Well-controlled current modulation and good saturation behaviour was observed for InGaSb-channel devices. In the on-state In0.3Ga0.7Sb-channel (Id,sat=49.4mA/mm, gm=12.3mS/mm, Ron=31.7kΩ.μm) and In0.4Ga0.6Sb-channel (Id,sat=38mA/mm, gm=11.9mS/mm, Ron=73.5kΩ.μm) devices outperformed the InGaAs-channel devices. However the devices could not be switched off. These findings indicate that III-V p-MOSFETs based on InGaSb as opposed to InGaAs channels are more suited as the p-channel option for post-Si CMOS.

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Successful implementation of fault-tolerant quantum computation on a system of qubits places severe demands on the hardware used to control the many-qubit state. It is known that an accuracy threshold Pa exists for any quantum gate that is to be used for such a computation to be able to continue for an unlimited number of steps. Specifically, the error probability Pe for such a gate must fall below the accuracy threshold: Pe < Pa. Estimates of Pa vary widely, though Pa ∼ 10−4 has emerged as a challenging target for hardware designers. I present a theoretical framework based on neighboring optimal control that takes as input a good quantum gate and returns a new gate with better performance. I illustrate this approach by applying it to a universal set of quantum gates produced using non-adiabatic rapid passage. Performance improvements are substantial comparing to the original (unimproved) gates, both for ideal and non-ideal controls. Under suitable conditions detailed below, all gate error probabilities fall by 1 to 4 orders of magnitude below the target threshold of 10−4. After applying the neighboring optimal control theory to improve the performance of quantum gates in a universal set, I further apply the general control theory in a two-step procedure for fault-tolerant logical state preparation, and I illustrate this procedure by preparing a logical Bell state fault-tolerantly. The two-step preparation procedure is as follow: Step 1 provides a one-shot procedure using neighboring optimal control theory to prepare a physical qubit state which is a high-fidelity approximation to the Bell state |β01⟩ = 1/√2(|01⟩ + |10⟩). I show that for ideal (non-ideal) control, an approximate |β01⟩ state could be prepared with error probability ϵ ∼ 10−6 (10−5) with one-shot local operations. Step 2 then takes a block of p pairs of physical qubits, each prepared in |β01⟩ state using Step 1, and fault-tolerantly prepares the logical Bell state for the C4 quantum error detection code.

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A lógica fuzzy admite infinitos valores lógicos intermediários entre o falso e o verdadeiro. Com esse princípio, foi elaborado neste trabalho um sistema baseado em regras fuzzy, que indicam o índice de massa corporal de animais ruminantes com objetivo de obter o melhor momento para o abate. O sistema fuzzy desenvolvido teve como entradas as variáveis massa e altura, e a saída um novo índice de massa corporal, denominado Índice de Massa Corporal Fuzzy (IMC Fuzzy), que poderá servir como um sistema de detecção do momento de abate de bovinos, comparando-os entre si através das variáveis linguísticas )Muito BaixaM, ,BaixaB, ,MédiaM, ,AltaA e Muito AltaM. Para a demonstração e aplicação da utilização deste sistema fuzzy, foi feita uma análise de 147 vacas da raça Nelore, determinando os valores do IMC Fuzzy para cada animal e indicando a situação de massa corpórea de todo o rebanho. A validação realizada do sistema foi baseado em uma análise estatística, utilizando o coeficiente de correlação de Pearson 0,923, representando alta correlação positiva e indicando que o método proposto está adequado. Desta forma, o presente método possibilita a avaliação do rebanho, comparando cada animal do rebanho com seus pares do grupo, fornecendo desta forma um método quantitativo de tomada de decisão para o pecuarista. Também é possível concluir que o presente trabalho estabeleceu um método computacional baseado na lógica fuzzy capaz de imitar parte do raciocínio humano e interpretar o índice de massa corporal de qualquer tipo de espécie bovina e em qualquer região do País.

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Repercussions of innovation adoption and diffusion studies have long been imperative to the success of novel introductions. However, perceptions and deductions of current innovation understandings have been changing over time. The paradigm shift from the goods-dominant (G-D) logic to the service-dominant (S-D) logic potentially makes the distinction between product (goods) innovation and service innovation redundant as the S-D logic lens views all innovations as service innovations (Vargo and Lusch, 2004; 2008; Lusch and Nambisan, 2015). From this perspective, product innovations are in essence service innovations, as goods serve as mere distribution mechanisms to deliver service. Nonetheless, the transition to such a broadened and transcending view of service innovation necessitates concurrently a change in the underlying models used to investigate innovation and its subsequent adoption. The present research addresses this gap by engendering a novel model for the most crucial period of service diffusion within the S-D logic context – the post-initial adoption phase, which demarcates an individual’s behavior after the initial adoption decision of a service. As a wellfounded understanding of service diffusion and the complementary innovation adoption still lingers in its infancy, the current study develops a model based on interdisciplinary domains mapping. Here fore, knowledge of the relatively established viral source domain is mapped to the comparatively undetermined target domain of service innovation adoption. To assess the model and test the importance of the explanatory variables, survey data from 750 respondents of a bank in Northern Germany is scrutinized by means of Structural Equation Modeling (SEM). The findings reveal that the continuance intention of a customer, actual usage of the service and the customer influencer value all constitute important postinitial adoption behavior that have meaningful implications for a successful service adoption. Second, the four constructs customer influencer value, organizational commitment, perceived usefulness and service customization are evidenced to have a differential impact on a iv customer’s post-initial adoption behavior. Third, this study indicates that post-initial adoption behavior further underlies the influence of a user’s age and besides that is also provoked by the internal and external environments of service adoption. Finally, this research amalgamates the broad view of service innovation by Nambisan and Lusch (2015) with the findings ensuing this enquiry’s model to arrive at a framework that it both, generalizable and practically applicable. Implications for academia and practitioners are captured along with avenues for future research.

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In this work, we present a sound and complete axiomatic system for conditional attribute implications (CAIs) in Triadic Concept Analysis (TCA). Our approach is strongly based on the Simplification paradigm which offers a more suitable way for automated reasoning than the one based on Armstrong’s Axioms. We also present an automated method to prove the derivability of a CAI from a set of CAI s.

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In this article, the authors propose a theory of the truth value of propositions from a logic-mathematical point of view. The work that the authors present is an attempt to address this question from an epistemological, linguistic, and logical-mathematical point of view. What is it to exist and how do we define existence? The main objective of this work is an approach to the first of these questions. We leave a more thorough treatment of the problem of existence for future works.

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La distinción entre argumentación y explicación es una tarea complicada pero necesaria por diversas razones. Una de ellas es la necesidad de incorporar la explicación en un movimiento del diálogo como resultado de una obligación dialéctica. Se propusieron distintos sistemas de diálogo que exploran la distinción enfatizando aspectos pragmáticos. En el presente trabajo me ocupo de aspectos estructurales de la explicación analizados en el marco de la lógica por defecto que permite caracterizar ciertas objeciones en el diálogo. Asimismo, considero que la versión operacional de la lógica por defecto constituye una aproximaciónadecuada en la construcción de la explicación y en la representación de la instancia de diálogo en el intercambio dialéctico

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La distinción entre argumentación y explicación es una tarea complicada pero necesaria por diversas razones. Una de ellas es la necesidad de incorporar la explicación en un movimiento del diálogo como resultado de una obligación dialéctica. Se propusieron distintos sistemas de diálogo que exploran la distinción enfatizando aspectos pragmáticos. En el presente trabajo me ocupo de aspectos estructurales de la explicación analizados en el marco de la lógica por defecto que permite caracterizar ciertas objeciones en el diálogo. Asimismo, considero que la versión operacional de la lógica por defecto constituye una aproximaciónadecuada en la construcción de la explicación y en la representación de la instancia de diálogo en el intercambio dialéctico

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The Toledo Gate of Ciudad Real, Spain, constructed between the late 13th and early 14th centuries, is the last remaining portion of a once complete medieval city wall. It represents the long history of the city and constitutes its main heritage symbol, dividing the historic city centre from the later 19th and 20th century expansions. In October 2012, the Town Hall and the Montemadrid Foundation started the conservation works to preserve this important monument. The preliminary phase of this project included an in-depth series of scientific studies which were carried out by a multidisciplinary team focusing on archival research, historic investigations, archaeological excavations as well as material composition analysis and main treatment application tests. As a result of these studies a series of virtual 3D models were created to inform, discuss and study the monument. A first digital model permitted visualization of the gate in the 19th century and how the main entrance to the city was integrated as a fundamental part of the city walls. This virtual reconstruction also became an important part of the campaign to raise awareness among the citizens towards a monument that had remained in the shadows for the last century, isolated in a roundabout after the systematic demolition of the city walls in the late 19th century. Over the last three years and as a result of these archaeological and historic investigations and subsequent virtual models, surprisingly new and interesting data were brought to light thus permitting the establishment and corroboration of a new and updated hypothesis of the Toledo Gate that goes beyond the previous ideas. As a result of these studies a new architectural typology with construction techniques of has been suggested. This paper describes how the results of this continuous and interdisciplinary documentation process have benefitted from a computer graphic reconstruction of the gate. It highlights how virtual reconstruction can be a powerful tool for conservation decision making and awareness raising. Furthermore, the interesting results of the final reconstruction hypothesis convinced the technical team responsible for the conservation to alter some aspects of the final project physical interventions in order to focus on some of the features and conclusions discovered through the virtual model study.

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We modelled the distributions of two toads (Bufo bufo and Epidalea calamita) in the Iberian Peninsula using the favourability function, which makes predictions directly comparable for different species and allows fuzzy logic operations to relate different models. The fuzzy intersection between individual models, representing favourability for the presence of both species simultaneously, was compared with another favourability model built on the presences shared by both species. The fuzzy union between individual models, representing favourability for the presence of any of the two species, was compared with another favourabilitymodel based on the presences of either or both of them. The fuzzy intersections between favourability for each species and the complementary of favourability for the other (corresponding to the logical operation “A and not B”) were compared with models of exclusive presence of one species versus the exclusive presence of the other. The results of modelling combined species data were highly similar to those of fuzzy logic operations between individual models, proving fuzzy logic and the favourability function valuable for comparative distribution modelling. We highlight several advantages of fuzzy logic over other forms of combining distribution models, including the possibility to combine multiple species models for management and conservation planning.

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In this thesis we discuss in what ways computational logic (CL) and data science (DS) can jointly contribute to the management of knowledge within the scope of modern and future artificial intelligence (AI), and how technically-sound software technologies can be realised along the path. An agent-oriented mindset permeates the whole discussion, by stressing pivotal role of autonomous agents in exploiting both means to reach higher degrees of intelligence. Accordingly, the goals of this thesis are manifold. First, we elicit the analogies and differences among CL and DS, hence looking for possible synergies and complementarities along 4 major knowledge-related dimensions, namely representation, acquisition (a.k.a. learning), inference (a.k.a. reasoning), and explanation. In this regard, we propose a conceptual framework through which bridges these disciplines can be described and designed. We then survey the current state of the art of AI technologies, w.r.t. their capability to support bridging CL and DS in practice. After detecting lacks and opportunities, we propose the notion of logic ecosystem as the new conceptual, architectural, and technological solution supporting the incremental integration of symbolic and sub-symbolic AI. Finally, we discuss how our notion of logic ecosys- tem can be reified into actual software technology and extended towards many DS-related directions.

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In Prior Analytics 1.1–22, Aristotle develops his proof system of non-modal and modal propositions. This system is given in the language of propositions, and Aristotle is concerned with establishing some properties and relations that the expressions of this language enjoy. However, modern scholarship has found some of his results inconsistent with positions defended elsewhere. The set of rules of inference of this system has also caused perplexity: there does not seem to be a single interpretation that validates all the rules which Aristotle is explicitly committed to using in his proofs. Some commentators have argued that these and other problems cannot be successfully addressed from the viewpoint of the traditional, ‘first-order’ interpretation of Aristotle’s syllogistic, whereby propositions are taken to involve quantification over individuals only. Accordingly, this interpretation not only is inadequate for formal analysis, but also stems from a misunderstanding of Aristotle’s ideas about quantification. On the contrary, in this study I purport to vindicate the adequacy and plausibility of the first-order interpretation. Together with some assumptions about the language of propositions and an appropriate regimentation, the first-order interpretation yields promising solutions to many of the problems raised by the modal syllogistic. Thus, I present a reconstruction of the language of propositions and a formal interpretation thereof which will prove respectful and responsive to most of the views endorsed by Aristotle in the ‘modal’ chapters of the Analytics.