Analytic model for turn off in the silicon-on-insulator LIGBT

Lateral insulated gate bipolar transistors (LIGBTs) in silicon-on-insulator (SOI) show a unique turn off characteristic when compared to junction-isolated RESURF LIGBTs or vertical IGBTs. The turn off characteristic shows an extended `terrace' where, after the initial fast transient characteristic of IGBTs due to the loss of the electron current, the current stays almost at the same value for an extended period of time, before suddenly dropping to zero. In this paper, we show that this terrace arises because there is a value of LIGBT current during switch off where the rate of expansion of the depletion region with respect to the anode current is infinite. Once this level of anode current is approached, the depletion region starts to expand very rapidly, and is only stopped when it reaches the n-type buffer layer surrounding the anode. Once this happens, the current rapidly drops to zero. A quasi-static analytic model is derived to explain this behaviour. The analytically modelled turn off characteristic agrees well with that found by numerical simulation.

The use of C-V techniques to investigate instability mechanisms in M-I-S structures

In the field of flat panel displays, the current leading technology is the Active Matrix liquid Crystal Display; this uses a-Si:H based thin film transistors (TFTs) as the switching element in each pixel. However, under gate bias a-Si:H TFTs suffer from instability, as is evidenced by a shift in the gate threshold voltage. The shift in the gate threshold voltage is generally measured from the gate transfer characteristics, after subjecting the TFT to prolonged gate bias. However, a major drawback of this measurement method is that it cannot distinguish whether the shift is caused by the change in the midgap states in the a-Si:H channel or by charge trapping in the gate insulator. In view of this, we have developed a capacitance-voltage (C-V) method to measure the shift in threshold voltage. We employ Metal-Insulator-Semiconductor (MIS) structures to investigate the threshold voltage shift as they are simpler to fabricate than TFTs. We have investigated a large of number Metal/a-Si:H/Si3N4/Si+n structures using our C-V technique. From, the C-V data for the MIS structures, we have found that the relationship between the thermal energy and threshold voltage shift is similar to that reported by Wehrspohn et. al in a-Si:H TFTs (J Appl. Phys, 144, 87, 2000). The a-Si:H and Si3N4 layers were grown using the radio-frequency plasma-enhanced chemical vapour deposition technique.

Destruction-free parameter extraction for a physics-based circuit simulator IGCT model

This paper presents a practical destruction-free parameter extraction methodology for a new physics-based circuit simulator buffer-layer Integrated Gate Commutated Thyristor (IGCT) model. Most key parameters needed for this model can be extracted by one simple clamped inductive-load switching experiment. To validate this extraction method, a clamped inductive load switching experiment was performed, and corresponding simulations were carried out by employing the IGCT model with parameters extracted through the presented methodology. Good agreement has been obtained between the experimental data and simulation results.

Characterization of defect removal in hydrogenated and deuterated amorphous silicon thin film transistors

Thin film transistors (TFTs) utilizing an hydrogenated amorphous silicon (a-Si:H) channel layer exhibit a shift in the threshold voltage with time under the application of a gate bias voltage due to the creation of metastable defects. These defects are removed by annealing the device with zero gate bias applied. The defect removal process can be characterized by a thermalization energy which is, in turn, dependent upon an attempt-to-escape frequency for defect removal. The threshold voltage of both hydrogenated and deuterated amorphous silicon (a-Si:D) TFTs has been measured as a function of annealing time and temperature. Using a molecular dynamics simulation of hydrogen and deuterium in a silicon network in the H2 * configuration, it is shown that the experimental results are consistent with an attempt-to-escape frequency of (4.4 ± 0.3) × 1013 Hz and (5.7 ± 0.3) × 1013 Hz for a-Si:H and a-Si:D respectively which is attributed to the oscillation of the Si-H and Si-D bonds. Using this approach, it becomes possible to describe defect removal in hydrogenated and deuterated material by the thermalization energies of (1.552 ± 0.003) eV and (1.559 ± 0.003) eV respectively. This correlates with the energy per atom of the Si-H and Si-D bonds. © 2006 Elsevier B.V. All rights reserved.

Switching aspects of hybrid semiconductor power devices

A hybrid semiconductor power device has been designed which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between an IGBT and a thyristor mode of operation. This paper discusses aspects of the switching behaviour of this and of similar devices. Simulation results of an example structure are presented and conceivable developments in the switching characteristics of hybrid devices are discussed.

Single-gated multiple-mode power semiconductor devices

A new method has been used to design a power semiconductor device which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between the IGBT and thyristor modes of operation. This paper discusses single-gated devices with multiple modes and aspects of their switching behaviour.

Switching aspects of hybrid semiconductor power devices

A hybrid semiconductor power device has been designed which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between an IGBT and a thyristor mode of operation. This paper discusses aspects of the switching behaviour of this and of similar devices. Simulation results of an example structure are presented and conceivable developments in the switching characteristics of hybrid devices are discussed.

Spice modelling of the superjunction IGBT

This paper presents a SPICE model of the SuperJunction Insulated Gate Bipolar Transistor (SJIGBT) [1]. SPICE simulation results are in good agreement with the DESSIS simulation results under DC conditions. This model consists of an intrinsic MOSFET and a parallel combination of a wide and a narrow base pnp BJTs. A parasitic JFET is also included to account for the restricted current flow between two adjacent p-wells. In addition the JFET component also models the additional depletion region caused by the transverse junction at the upper side of the n-drift region where the current is mainly transported via majority carriers.

Active Voltage Control on series connection of IGBTs and diode recovery optimization

In this paper an Active Voltage Control (AVC) technique is presented, for series connection of insulated-gate-bipolar-transistors (IGBT) and control of diode recovery. The AVC technique can control the switching trajectory of an IGBT according to a pre-set reference signal. In series connections, every series connected IGBT follows the reference and so that the dynamic voltage sharing is achieved. Another key advantage for AVC is that by changing the reference signal at turn-on, the diode recovery can be optimised. © 2010 IEEE.

Abundance, migration and management of Jatka (juvenile hilsa, Tenualosa ilisha) in the Gajner Beel, Pabna, Bangladesh

Studies on the abundance, migration and management of Jatka (juvenile hilsa, Tenualosa ilisha) were conducted in the Gajner Beel, located at the south-east corner of the Pabna Irrigation and Rural Development Project (PIRDP) in Sujanagar Upazila of Pabna district, Bangladesh. The main Jatka season was found to be extended from mid August to mid October. Veshal/Bandh/Khora Jal (lift net) and Ber Jal (beach seine net) were found as the major gears involved in Jatka fishing. The estimated total amount of Jatka caught from the Beel during the studied season was 46.2 t. The migratory route of Jatka is extended from the Padma and/or Jamuna rivers to the Badai river and then to the Beel through the sluice gate. The possibility of breeding of hilsa in the Beel was nullified. Finally, a community based management plan was suggested for implementation by the Gajner Beel management committee.

Challenges to effective fishing and preferred fishing gear in a hydrodynamic freshwater system

Challenges to fishing and preferred gear of multiple used Lake, whose water depth is controlled by opening of its dam gate were investigated. Geographic survey, interview and focused group discussion of fishermen were used to assess factors influencing effectiveness of fishing and the preferred gear of Asejire Lake. Water usage (s) such as frequency of Complete and Partial Opening of Dams Gate (CODG and PODG) were investigated as indices for hydrodynamic condition. Response during focused group discussion with about 33% of fishermen of the Lake were obtained on sources of disturbance to effective fishing (SDEF), most effective gear (MEG)- least environmentally perturbed gear, comparability of catch structure of preferred gear to conventional gear and sustainability of superiority of preferred gears in situations outside hydrodynamic condition (SSPPG). The PODG occurred 1-7times/Month-dry season, 15-18times/Month-wet season; CODG occurred 1-2times/Month in both season; Interval of CODG was 3-17 and 5-12days (dry and wet season). It affected set-net and catch. The SDEF were gear availability, weather condition, dam’s gate opening, religion activities and Health of fisher-folks. 50% respondents accepted opening of dams gate as most important disturbance while religion was least (5% respondents accepted). 60% respondents accepted traps as MEG being the least affected while 75% respondents accepted Gura cage trap as the MEG among traps.90% respondents accepted that among traps, its catch structure was closest (comparable) to conventional gear. However, 75% respondents rejected SSPPG. Opening of dams’ gate creates hydrodynamic condition and it affects fishing. Gura trap was preferred for fishing hydrodynamic condition.

Self-aligned high-resolution printed polymer transistors

A process to fabricate solution-processable thin-film transistors (TFTs) with a one-step self-aligned definition of the dimensions in all functional layers is demonstrated. The TFT-channel, semiconductor materials, and effective gate dimention of different layers are determined by a one-step imprint process and the subsequent pattern transfer without the need for multiple patterning and mask alignment. The process is compatible with fabrication of large-scale circuits. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Sustainable livelihood approach of prawn production and marketing systems in Mymensingh, Bangladesh

An investigation was carried out in Phulpur upazila, Mymensingh to examine the current production practices of freshwater giant prawn, Macrobrachium rosenbergii and its marketing systems with sustainable livelihood approach. The livelihoods of a considerable number of rural poor are associated with prawn production in Phulpur upazila. Based on a sample of 50 farmers, about 94% farmers were found to culture prawn with fish in their ponds. Only 4% and 2% farmers were found to culture prawn-fish-dike crops and only prawn respectively. Prawn marketing is almost exclusively a preserve of the private sector where the livelihoods of a large number of people are associated with its distribution and marketing systems. The market chain from producers to consumers passes through a number of intermediaries. About 40% of the produced prawns are exported and the rest 60% are sold to local markets. The price of prawn depends on quality, size and weight. The average farm-gate price of prawn varied from Tk. 110 to 160/kg, whereas it's [sic] market price varied from Tk. 150 to 350/kg. Most of the farmers and traders have improved their socio-economic conditions through prawn farming and marketing activities. However, concerns arise about the long-term sustainability of prawn farming and marketing systems due to lack of technical knowledge of prawn farming, poor road and transport facilities, higher transport cost, poor supply of ice, lack of cash and credit facilities. It is therefore essential to provide institutional and organizational support and credit facilities for sustainable prawn production and marketing systems.

High mobility N-channel and P-channel nanocrystalline silicon thin-film transistors

We report high hole and electron mobilities in nanocrystalline silicon (nc-Si:H) top-gate staggered thin-film transistors (TFTs) fabricated by direct plasma-enhanced chemical vapor deposition (PECVD) at 260°C. The n-channel nc-Si:H TFT with n+ nc-Si:H ohmic contacts shows a field-effect electron mobility (μnFE) of 130 cm2/Vs, which increases to 150 cm2/Vs with Cr-silicide contacts, along with a field-effect hole mobility (μhFE) of 25 cm2/Vs. To the best of our knowledge, the hole and electron mobilities reported here are the highest achieved to date using direct PECVD. © 2005 IEEE.

Investigation into IGBT dV/dt during turn-off and its temperature dependence

In many power converter applications, particularly those with high variable loads, such as traction and wind power, condition monitoring of the power semiconductor devices in the converter is considered desirable. Monitoring the device junction temperature in such converters is an essential part of this process. In this paper, a method for measuring the insulated gate bipolar transistor (IGBT) junction temperature using the collector voltage dV/dt at turn-OFF is outlined. A theoretical closed-form expression for the dV/dt at turn-OFF is derived, closely agreeing with experimental measurements. The role of dV/dt in dynamic avalanche in high-voltage IGBTs is also discussed. Finally, the implications of the temperature dependence of the dV/dt are discussed, including implementation of such a temperature measurement technique. © 2006 IEEE.