994 resultados para electron-positron beams


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Dense arrays of high aspect ratio Si micro-pyramids have been formed by cumulative high intensity laser irradiation of doped Si wafers in an SF6 environment. A comparative study using nanosecond (XeCl, 308 nm) and femtosecond (Ti: Sapphire, 800 nm and KrF, 248 nm) laser pulses has been performed in this work. The influence of pulse duration and ambient gas pressure (SF6) is also presented. Scanning electron microscopy has shown that upon laser irradiation conical features appear on the Si surface in a rather homogenous distribution and with a spontaneous self alignment into arrays. Their lowest tip diameter is 800 nm; while their height reaches up to 90 mum. Secondary tip decoration appears on the surface of the formed spikes. Areas of 2 X 2 mm(2) covered with Si cones have been tested as cold cathode field emitters. After several conditioning cycles, the field emission threshold for the studied Si tips is as low as 2 V/mum, with an emission current of 10(-3) A/cm(2) at 4 V/mum. Even though these structures have smaller aspect ratios than good quality carbon nanotubes, their field emission properties are similar. The simple and direct formation of field emission Si arrays over small pre-selected areas by laser irradiation could lead to a novel approach for the development of electron sources. (C) 2003 Elsevier B.V. All rights reserved.

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Electron beam surface remelting has been carried out on AISI D2 cold-worked die steel. The microstructure and hardening behavior of the electron beam surface remelted AISI D2 cold-worked die steel have been studied by means of optical microscopy and Vickers hardness testing. It was found that AISI D2 steel can be successfully surface hardened by electron beam surface remelting. This surface hardening effect can be attributed to microstructural refinement following electron beam surface remelting. (C) 2002 Elsevier Science B.V. All rights reserved.

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A dimensionless number, termed response number in the present paper, is suggested for the dynamic plastic response of beams and plates made of rigid-perfectly plastic materials subjected to dynamic loading. It is obtained at dimensional reduction of the basic governing equations of beams and plates. The number is defined as the product of the Johnson's damage number and the square of the half of the slenderness ratio for a beam; the product of the damage number and the square of the half of the aspect ratio for a plate or membrane loaded dynamically. Response number can also be considered as the ratio of the inertia force at the impulsive loading to the plastic limit load of the structure. Three aspects are reflected in this dimensionless number: the inertia of the applied dynamic loading, the resistance ability of the material to the deformation caused by the loading and the geometrical influence of the structure on the dynamic response. For an impulsively loaded beam or plate, the final dimensionless deflection is solely dependent upon the response number. When the secondary effects of finite deflections, strain-rate sensitivity or transverse shear are taken into account, the response number is as useful as in the case of simple bending theory. Finally, the number is not only suitable to idealized dynamic loads but also applicable to dynamic loads of general shape.

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This paper reports on the synthesis of zinc oxide (ZnO) nanostructures and examines the performance of nanocomposite thin-film transistors (TFTs) fabricated using ZnO dispersed in both n- and p-type polymer host matrices. The ZnO nanostructures considered here comprise nanowires and tetrapods and were synthesized using vapor phase deposition techniques involving the carbothermal reduction of solid-phase zinc-containing compounds. Measurement results of nanocomposite TFTs based on dispersion of ZnO nanorods in an n-type organic semiconductor ([6, 6]-phenyl-C61-butyric acid methyl ester) show electron field-effect mobilities in the range 0.3-0.6 cm2V-1 s-1. representing an approximate enhancement by as much as a factor of 40 from the pristine state. The on/off current ratio of the nanocomposite TFTs approach 106 at saturation with off-currents on the order of 10 pA. The results presented here, although preliminary, show a highly promising enhancement for realization of high-performance solution-processable n-type organic TFTs. © 2008 IEEE.

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The deposition of hydrogenated amorphous silicon carbide (a-SiC:H) films from a mixture of silane, acetylene and hydrogen gas using the electron cyclotron resonance chemical vapour deposition (ECR-CVD) process is reported. The variation in the deposition and film characteristics such as the deposition rate, optical band gap and IR absorption as a function of the hydrogen dilution is investigated. The deposition rate increases to a maximum value of about 250 Å min-1 at a hydrogen dilution ratio of about 20 (hydrogen flow (sccm)/acetylene + silane flow (sccm)) and decreases in response to a further increase in the hydrogen dilution. There is no strong dependence of the optical band gap on the hydrogen dilution within the dilution range investigated (10-60) and the optical band gap calculated from the E04 method varied marginally from about 2.85 to 3.17 eV. The room temperature photoluminescence (PL) peak energy and intensity showed a prominent shift to a maximum value of about 2.17 eV corresponding to maximum PL intensity at a moderate hydrogen dilution of about 30. The PL intensity showed a strong dependence on the hydrogen dilution variation.

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The creep response of metallic foam sandwich beams in 3-point bend is investigated numerically for the case of a metallic foam core and two steel faces. The face sheets are treated as elastic, while the foam core is modeled by a viscoplastic extension of the Deshpande-Fleck yield surface. This power-law creeping constitutive law has been implemented within the commercial finite element code ABAQUS. It is found that the beams creep by a variety of competing mechanisms, depending upon the choice of material properties and the geometric parameters. A failure map is constructed and effect of rate dependence on the load-deflection curves is quantified, and compared against the available experimental data.

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Plastic collapse modes of sandwich beams have been investigated experimentally and theoretically for the case of an aluminum alloy foam with cold-worked aluminum face sheets. Plastic collapse is by three competing mechanisms: face yield, indentation and core shear, with the active mechanism depending upon the choice of geometry and material properties. The collapse loads, as predicted by simple upper bound solutions for a rigid, ideally plastic beam, and by more refined finite element calculations are generally in good agreement with the measured strengths. However, a thickness effect of the foam core on the collapse strength is observed for collapse by core shear: the shear strength of the core increases with diminishing core thickness in relation to the cell size. Limit load solutions are used to construct collapse maps, with the beam geometrical parameters as axes. Upon displaying the collapse load for each collapse mechanism, the regimes of dominance of each mechanism and the associate mass of the beam are determined. The map is then used in optimal design by minimizing the beam weight for a given structural load index.

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To study electron affinity kinetics, a shock tube method was applied, in which the test gas was ionized by a reflected shock wave and subsequently quenched by a strong rarefaction wave. As the quenching speed of 106 K/s was reached, a nonequilibrium ionization-recombination process occurred, which was dominated by ion recombination with electrons. A Langmuir electrostatic probe was used to monitor variation in the ion number density at the reflection shock region. The working state of the probe was analyzed...

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The structure and chemistry of the interface between a Si(111) substrate and an AlN(0001) thin film grown by metalorganic vapor phase epitaxy have been investigated at a subnanometer scale using high-angle annular dark field imaging and electron energy-loss spectroscopy. 〈1120̄〉AlN ∥ 〈110〉Si and 〈0001〉AlN ∥ 〈111〉 Si epitaxial relations were observed and an Al-face polarity of the AlN thin film was determined. Despite the use of Al deposition on the Si surface prior to the growth, an amorphous interlayer of composition SiNx was identified at the interface. Mechanisms leading to its formation are discussed. © 2010 American Institute of Physics.