Depth dependent elastic strain in ZnO epilayer: combined Rutherford backscattering/channeling and X-ray diffraction

A ZnO layer was grown by metalorganic chemical vapor deposition (MOCVD) on a sapphire (0 0 0 1) substrate. The perpendicular and parallel elastic strain of the ZnO epilayer, e(perpendicular to) = 0.19%, e(parallel to) = -0.29%, respectively, were derived by using the combination of Rutherford backscattering (RBS)/channeling and X-ray diffraction (XRD). The ratio vertical bar e(parallel to)/ e(perpendicular to)vertical bar = 1.5 indicates that ZnO layer is much stiffer in the a-axis direction than in the c-axis direction. By using RBS/C, the depth dependent elastic strain was deduced. The strain is higher at the depth close to the interface and decreases towards the surface. The negative tetragonal distortion was explained by considering the lattice mismatch and thermal mismatch in ZnO thin film. (c) 2004 Elsevier B.V. All rights reserved.

Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling

The depth distribution of the strain-related tetragonal distortion e(T) in the GaN epilayer with low-temperature AlN interlayer (LT-AlN IL) on Si(111) substrate is investigated by Rutherford backscattering and channeling. The samples with the LT-AlN IL of 8 and 16 nm thickness are studied, which are also compared with the sample without the LT-AlN IL. For the sample with 16-nm-thick LT-AlN IL, it is found that there exists a step-down of e(T) of about 0.1% in the strain distribution. Meanwhile, the angular scan around the normal GaN <0001> axis shows a tilt difference about 0.01degrees between the two parts of GaN separated by the LT-AlN IL, which means that these two GaN layers are partially decoupled by the AlN interlayer. However, for the sample with 8-nm-thick LT-AlN IL, neither step-down of e(T) nor the decoupling phenomenon is found. The 0.01degrees decoupled angle in the sample with 16-nm-thick LT-AlN IL confirms the relaxation of the LT-AlN IL. Thus the step-down of e(T) should result from the compressive strain compensation brought by the relaxed AlN interlayer. It is concluded that the strain compensation effect will occur only when the thickness of the LT-AlN IL is beyond a critical thickness. (C) 2004 American Institute of Physics.

Blind image restoration based on the theory of high-dimensional space geometry

In practical situations, the causes of image blurring are often undiscovered or difficult to get known. However, traditional methods usually assume the knowledge of the blur has been known prior to the restoring process, which are not practicable for blind image restoration. A new method proposed in this paper aims exactly at blind image restoration. The restoration process is transformed into a problem of point distribution analysis in high-dimensional space. Experiments have proved that the restoration could be achieved using this method without re-knowledge of the image blur. In addition, the algorithm guarantees to be convergent and has simple computation.

The image coding scheme based on neural network and SVM

This paper applies data coding thought, which based on the virtual information source modeling put forward by the author, to propose the image coding (compression) scheme based on neural network and SVM. This scheme is composed by "the image coding (compression) scheme based oil SVM" embedded "the lossless data compression scheme based oil neural network". The experiments show that the scheme has high compression ratio under the slightly damages condition, partly solve the contradiction which 'high fidelity' and 'high compression ratio' cannot unify in image coding system.

Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition

Rutherford backscattering and channeling is combined with X-ray diffraction to study the depth dependence of crystalline quality in InN layers grown by metalorganic chemical vapor deposition on sapphire substrate. The poorest crystalline quality in InN layer is produced at the intermediate region over 100 nm away from the InN/sapphire interface. With increasing layer thickness the crystalline quality improves to a certain degree dependent on the growth temperature. The InN sample grown at 450 degrees C is found to be more homogeneous than the sample grown at 550 degrees C. The difference in the defect profile is explained by the temperature-dependent growth modes. The inhomogeneity of structural quality and related properties such as carrier concentration and strain field is possibly the reason to observe a high energy wing in PL spectrum of the InN sample grown at 550 degrees C. (c) 2006 Elsevier B.V All rights reserved.

XPS depth profiling study of n/TCO interfaces for p-i-n amorphous silicon solar cells

Detailed X-ray photoelectron spectroscopy (XPS) depth profiling measurements were performed across the back n-layer/transparent conducting oxide (n/TCO) inter-faces for superstrate p-i-n solar cells to examine differences between amorphous silicon (a-Si:H) and microcrystalline silicon (mu c-Si:H) n-layer materials as well as TCO materials ZnO and ITO in the chemical, microstructural and diffusion properties of the back interfaces. No chemical reduction of TCO was found for all variations of n-layer/TCO interfaces. We found that n-a-Si:H interfaces better with ITO, while n-mu c-Si:H, with ZnO. A cross-comparison shows that the n-a-Si:H/ITO interface is superior to the n-mu c-Si:H/ZnO interface, as evidenced by the absence of oxygen segregation and less oxidized Si atoms observed near the interface together with much less diffusion of TCO into the n-layer. The results suggest that the n/TCO interface properties are correlated with the characteristics of both the n-layer and the TCO layer. Combined with the results reported on the device performance using similar back n/TCO contacts, we found the overall device performance may depend on both interface and bulk effects related to the back n/TCO contacts. (c) 2006 Elsevier B.V. All rights reserved.

High-Dimensional Space Geometrical Informatics and its applications to image restoration

With a view to solve the problems in modern information science, we put forward a new subject named High-Dimensional Space Geometrical Informatics (HDSGI). It builds a bridge between information science and point distribution analysis in high-dimensional space. A good many experimental results certified the correctness and availability of the theory of HDSGI. The proposed method for image restoration is an instance of its application in signal processing. Using an iterative "further blurring-debluring-further blurring" algorithm, the deblured image could be obtained.

A novel image restoration algorithm based on high-dimensional space geometry

A novel image restoration approach based on high-dimensional space geometry is proposed, which is quite different from the existing traditional image restoration techniques. It is based on the homeomorphisms and "Principle of Homology Continuity" (PHC), an image is mapped to a point in high-dimensional space. Begin with the original blurred image, we get two further blurred images, then the restored image can be obtained through the regressive curve derived from the three points which are mapped form the images. Experiments have proved the availability of this "blurred-blurred-restored" algorithm, and the comparison with the classical Wiener Filter approach is presented in final.

Depth dependence of the tetragonal distortion of a GaN layer on Si(111) studied by Rutherford backscattering/channeling

Rutherford backscattering and channeling have been used to characterize the structure of a GaN layer grown on a Si(111) substrate. The results show that a 1.26 mum GaN epitaxial layer with a rather abrupt interface and a good crystalline quality (chi(min)=3.4%) can be grown on a Si(111) substrate. Using the channeling angular scan around an off-normal <1 (2) over bar 13> axis in the {10 (1) over bar0} plane of the GaN layer, the tetragonal distortion e(T), which is caused by the elastic strain in the epilayer, can be determined. Moreover, the depth dependence of the e(T) can be obtained using this technique. A fully relaxed (e(T)=0) GaN layer for a thickness <2.8 mum is expected. (C) 2002 American Institute of Physics.

Identification of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy

An anomalous behavior was observed in X-ray photoelectron Spectroscopy (XPS) depth profile measurements conducted on CeO2/Si epilayers grown by ion beam epitaxy (IBE): the signals of Ce3+ and Ce4+ co-exist, and the ratio between them increases during the etching time and then tends to maintain a constant level before increasing again. The results of X-ray Diffraction (XRD), Auger Electron Spectroscopy (AES), and Rutherford Back-Scattering (RES) measurements proved that the reduction chemical reaction of CeO2 is induced by ion-etching. (C) 1998 Elsevier Science Ltd. All rights reserved.

Mechanism of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy

In a search for the mechanism of the induced reduction reaction that occurred in X-ray photoelectron Spectroscopy (XPS) depth profiles measured experimentally on CeO2/Si epilayers grown by ion beam epitaxy (IBE), several possibilities have been checked. The first possibility, that the X-ray induces the reaction, has been ruled out by experimentation. Other possible models for the incident-ion induced reaction, one based on short-range interaction (direct collision) and the other based on long-range potential accompanied with the incident-ions, have been tested by simulation on computer. The results proved that the main mechanism is the former, not the latter. (C) 1998 Elsevier Science Ltd. All rights reserved.

A novel image restoration approach based on point location in high-dimensional space geometry

The goal of image restoration is to restore the original clear image from the existing blurred image without distortion as possible. A novel approach based on point location in high-dimensional space geometry method is proposed, which is quite different from the thought ways of existing traditional image restoration approaches. It is based on the high-dimensional space geometry method, which derives from the fact of the Principle of Homology-Continuity (PHC). Begin with the original blurred image, we get two further blurred images. Through the regressive deducing curve fitted by these three images, the first iterative deblured image could be obtained. This iterative "blurring-debluring-blurring" process is performed till reach the deblured image. Experiments have proved the availability of the proposed approach and achieved not only common image restoration but also blind image restoration which represents the majority of real problems.

High-Dimensional Space Geometrical Informatics and its applications to image restoration

With a view to solve the problems in modern information science, we put forward a new subject named High-Dimensional Space Geometrical Informatics (HDSGI). It builds a bridge between information science and point distribution analysis in high-dimensional space. A good many experimental results certified the correctness and availability of the theory of HDSGI. The proposed method for image restoration is an instance of its application in signal processing. Using an iterative "further blurring-debluring-further blurring" algorithm, the deblured image could be obtained.

A novel image restoration algorithm based on high-dimensional space geometry

A novel image restoration approach based on high-dimensional space geometry is proposed, which is quite different from the existing traditional image restoration techniques. It is based on the homeomorphisms and "Principle of Homology Continuity" (PHC), an image is mapped to a point in high-dimensional space. Begin with the original blurred image, we get two further blurred images, then the restored image can be obtained through the regressive curve derived from the three points which are mapped form the images. Experiments have proved the availability of this "blurred-blurred-restored" algorithm, and the comparison with the classical Wiener Filter approach is presented in final.

A Novel Geometric Algorithm for Blind Image Restoration Based on High-Dimensional Space

A novel geometric algorithm for blind image restoration is proposed in this paper, based on High-Dimensional Space Geometrical Informatics (HDSGI) theory. In this algorithm every image is considered as a point, and the location relationship of the points in high-dimensional space, i.e. the intrinsic relationship of images is analyzed. Then geometric technique of "blurring-blurring-deblurring" is adopted to get the deblurring images. Comparing with other existing algorithms like Wiener filter, super resolution image restoration etc., the experimental results show that the proposed algorithm could not only obtain better details of images but also reduces the computational complexity with less computing time. The novel algorithm probably shows a new direction for blind image restoration with promising perspective of applications.