988 resultados para calcium (Ca) ion deposition


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Pós-graduação em Cirurgia Veterinária - FCAV

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Pós-graduação em Agronomia (Energia na Agricultura) - FCA

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Pós-graduação em Química - IQ

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Pós-graduação em Ciência Odontólogica - FOA

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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ABSTRACT: This work proposes an analytical procedure for direct determination of calcium, magnesium, manganese and zinc in buffalo milk by flame atomic absorption spectrometry (FAAS). Samples were diluted with a solution containing 10% (v/v) of water-soluble tertiary amines (CFA-C) at pH 8. For comparison, buffalo milk samples were digested with HNO3 and H2O2. According to a paired t-test, the results obtained in the determination of Ca, Mg, Mn and Zn in digested samples and in 10% (v/v) CFA-C medium were in agreement at a 95% confidence level. The developed procedure is simple, rapid, decrease the possibility of contamination and can be applied for the routine determination of Ca, Mg, Mn and Zn in buffalo milk samples without any difficulty caused by matrix constituents, such as fat content, and particle size distribution in the milk emulsion

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Amorphous silicon carbonitride (a-SiCN:H) films were synthesized by radiofrequency (RF) Plasma Enhanced Vapor Chemical Deposition (PECVD) using hexamethyldisilazane (HMDSN) as precursor compound. Then, the films were post-treated by Plasma Immersion Ion Implantation (PIII) in argon atmosphere from 15 to 60 min The hardness of the film enhanced after ion implantation, and the sample treated at 45 min process showed hardness greater than sixfold that of the untreated sample. This result is explained by the crosslinking and densification of the structure Films were exposed to oxygen plasma for determining of the etching rate. It decreased monotonically from 33 angstrom/min to 19 angstrom/min for the range of process time, confirming structural alterations. Hydrophobic character of the a-SiCN:H films were modified immediately after ion bombardment, due to incorporation of polar groups. However, the high wettability of the films acquired by the ion implantation was diminished after aging in air. Therefore, argon PIII made a-SiCN.H films mechanically more resistant and altered their hydrophobic character.