bridge the gap between software test process and business value: a case study

Chinese Academy of Sciences (ISCAS)

data transformation and attribute subset selection: do they help make differences in software failure prediction?

IEEE, IEEE Comp Soc, Tech Council Software Engn

the study of trustworthy software process improvement model

Huazhong Univ Sci & Technol, Natl Tech Univ Ukraine, Huazhong Normal Univ, Harbin Inst Technol, IEEE Ukraine Sect, I& M/CI Joint Chapter

value-based multiple software projects scheduling with genetic algorithm

Chinese Acad Sci, ISCAS Lab Internet Software Technologies

a fuzzy-based method for evaluating the trustworthiness of software processes

University of Paderborn; Fraunhofer Inst. Exp. Softw. Eng. (IESE); Chinese Academy of Science (ISCAS)

remote attestation for custom-built software

Huazhong Univ Sci & Technol, Natl Tech Univ Ukraine, Huazhong Normal Univ, Harbin Inst Technol, IEEE Ukraine Sect, I& M/CI Joint Chapter

Realization of write-once-read-many-times memory devices based on poly(N-vinylcarbazole) by thermally annealing

A nonvolatile write-once-read-many-time (WORM-time) memory device based on poly(N-vinylcarbazole) (PVK) films was realized by thermally annealing. The device can be fabricated using a simple spin coat method. It was found that the control of PVK film surface morphology by thermally annealing plays an important role in achieving the WORM memory properties. The memory device showed an ON/OFF current ratio as high as 10(4) and the retention time was over 2000 s without degradation.

The morphology control of pentacene for write-once-read-many-times memory devices

We realized write-once-read-many-times (WORM) memory devices based on pentacene and demonstrated that the morphology control of the vacuum deposited pentacene thin film is greatly important for achieving the unique nonvolatile memory properties. The resulted memory devices show a high ON/OFF current ratio (10(4)), long retention time (over 12 h), and good storage stability (over 240 h). The reduction of the barrier height caused by a large interface dipole and the damage of the interface dipole under a critical bias voltage have been used to explain the transition processes.

Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum

Negative differential resistance (NDR) and memory phenomenon have been realized in current-voltage (I-V) characteristics of indium tin oxide/tris(8-hydroxyquinoline) aluminum/aluminum devices. The I-V curves have been divided into three operational regions that are associated with different working regimes of the devices: (i) bistable region, (ii) NDR region, and (iii) monotonic region. The bistable region disappeared after a couple of voltage sweeps from zero to a positive voltage. The bistable nature can be reinstated by applying a suitable negative voltage.

Organic Thin-Film Transistor Memory With Nanoparticle Floating Gate

Organic thin-film transistor memory devices were realized by inserting a layer of nanoparticles (such as Ag or CaF2) between two Nylon 6 gate dielectrics as the floating gate. The transistor memories were fabricated on glass substrates by full thermal deposition. The transistors exhibit significant hysteresis behavior in current-voltage characteristics, due to the separated Ag or CaF2 nanoparticle islands that act as charge trap centers. The mechanism of the transistor memory operation was discussed.

Write-Once Read-Many-Times Memory Based on a Single Layer of Pentacene

We realized an organic electrical memory device with a simple structure based on single-layer pentacene film embedded between Al and ITO electrodes. The optimization of the thickness and deposition rate of pentacene resulted in a reliable device with an on/off current ratio as high as nearly 10(6), which was two orders of magnitude higher than previous results, and the storage time was more than 576 h. The current transition process is attributed to the formation and damage of the Interface dipole at different electric fields, in which the current conduction showed a transition from ohmic conductive current to Fowler-Nordheim tunneling current. After the transition from ON- to OFF-state, the device tended to remain in the OFF-State even when the applied voltage was removed, which indicated that the device was very promising for write-once read-many-times memory.

Nonvolatile memory devices based on gold nanoparticle and poly (N-Vinylcarbazole) composite

A rewritable polymer memory device based on gold nanoparticle doped poly (N-vinylcarbazole) (PVK), which can be easily fabricated by simple spin coating, has been described. An electrical bistable phenomenon is observed in the current-voltage characteristics of this device, and it is found that the electrical bistability is repeatable by proper writing voltage and erasing voltage. The unique behavior of the devices provides an interesting approach such that doping nanoparticles in polymer can be used to realize high performance nanovolatile polymer memory devices.

Shape memory effect of poly(L-lactide)-based polyurethanes with different hard segments

A series of biodegradable polylactide-based polyurethanes (PLAUs) were synthesized using PLA diol (M-n = 3200) as soft segment, 4,4 '-diphenylmethane diisocyanate (MDI), 2,4-toluene diisocyanate (TDI), and isophorone diisocyanate (IPDI) as hard segment, and 1,4-butanediol as chain extender. The structures and properties of these PLAUs were studied using infrared spectroscopy, differential scanning calorimetry, tensile testing, and thermomechanical analysis. Among them, the MDI-based PLAU has the highest T-g, maximum tensile strength, and restoration force, the TDI-based PLAU has the lowest T-g, and the IPDI-based PLAU has the highest tensile modulus and elongation at break. They are all amorphous. The shape recovery of the three PLAUs is almost complete in a tensile elongation of 150% or a twofold compression. They can keep their temporary shape easily at room temperature (20 degrees C). More importantly, they can deform and recover at a temperature below their T-g values. Therefore, by selecting the appropriate hard segment and adjusting the ratio of hard to soft segments, they can meet different practical demands for shape memory medical devices.