954 resultados para Si microstrip and pad detectors


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Thermomechanical processing simulations were performed using a hot-torsion machine, in order to develop a comprehensive understanding of the effect of severe deformation in the recrystallized and nonrecrystallized austenite regions on the microstructural evolution and mechanical properties of the 0.2 wt pct C-1.55 wt pct Mn-1.5 wt pct Si transformation-induced plasticity (TRIP) steel. The deformation schedule affected all constituents (polygonal ferrite, bainite in different morphologies, retained austenite, and martensite) of the multiphased TRIP steel microstructure. The complex relationships between the volume fraction of the retained austenite, the morphology and distribution of all phases present in the microstructure, and the mechanical properties of TRIP steel were revealed. The bainite morphology had a more pronounced effect on the mechanical behavior than the refinement of the microstructure. The improvement of the mechanical properties of TRIP steel was achieved by variation of the volume fraction of the retained austenite rather than the overall refinement of the microstructure.

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Human chemical senses are the gatekeepers of our digestive system. Chemical separation combined with human sensory perception has been used to isolate and identify a natural non-steroidal anti-inflammatory compound in olive oil.

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The effect of additions of Nb, A1 and Mo to Fe-C-Mn-Si TRIP steels on the final microstructure and mechanical properties after simulated thermomechanical processing (TMP) has been studied. Laboratory simulations of continuous cooling during TMP were performed using a quench deformation dilatometer, while laboratory simulations of discontinuous cooling during TMP were performed using a hot rolling mill. From this a comprehensive understanding of the structural and kinetic aspects of the bainite transformation in these types of TRIP steels has been developed. All samples were characterised using optical microscopy and XRD. The relationships between the morphology of bainitic structure, volume fraction, stability of RA and mechanical properties were investigated.

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Comparison of the microstructures formed in the specimens produced by corresponding schedules in the dilatometer and by laboratory rolling has shown that a higher level of retained austenite was achieved in dilatometer specimens, whereas in rolled specimens a higher amount of martensite was present instead of retained austenite.

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Continuous and discontinuous cooling tests were performed using a quench deformation dilatometer to develop a comprehensive understanding of the structural and kinetic aspects of the bainite transformation in low carbon TRIP (transformation induced plasticity) steels as a function of thermomechanical processing and composition. Deformation in the unrecrystallised austenite region refined the ferrite grain size and increased the ferrite and bainite transformation temperatures for cooling rates from 10 to 90 K s-1. The influence of niobium on the transformation kinetics was also investigated. Niobium increases the ferrite start transformation temperature, refines the ferrite microstructure, and stimulates the formation of acicular ferrite. The effect of the bainite isothermal transformation temperature on the final microstructure of steels with and without a small addition of niobium was studied. Niobium promotes the formation of stable retained austenite, which influences the mechanical properties of TRIP steels. The optimum mechanical properties were obtained after isothermal holding at 400°C in the niobium steel containing the maximum volume fraction of retained austenite with acicular ferrite as the predominant second phase.

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An AA6082 alloy was subjected to eight passes of equal channel angular pressing at 100 °C, resulting in an ultrafine grain size of 0.2 to 0.4 µm. The tensile deformation behavior of the material was studied over the temperature range of 100 °C to 350 °C and strain rate range of 10¯4 to 10¯11. The evolution of microstructure under tensile deformation was investigated by analyzing both the deformation relief on the specimen surface and the dislocation structure. While extensive microshear banding was found at the lower temperatures of 100 °C to 150 °C, deformation at higher temperatures was characterized by cooperative grain boundary sliding and the development of a bimodal microstructure. Dislocation glide was identified as the main deformation mechanism within coarse grains, whereas no dislocation activity was apparent in the ultrafine grains.

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This paper investigates and measures the near end and far end crosstalk in the multiconductor transmission line (MTL) mounted on the PCB by varying the parameters which are associated with physical dimension, characteristic of the substrate and the nature of input signal. With the variation of these factors, the coupling inductance and capacitance vary causing crosstalk. By using the method of moment (MoM), the per unit length parameters are calculated for microstrip lines. Subcircuit model is used to investigate the time domain and frequency domain analysis of near field and far field crosstalk. This parametric investigation is very useful for designing high speed interconnectors on PCB substrates. Some experimental results are presented to validate the analytical findings.

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Paint baking treatment was carried out in a silicon oil bath at 170 °C for 20 min for Si-Al-Mn TRIP Steel sheet with different prestrains, and effect of prestrain on microstructures and properties was studied before and after baking. The results show that with the increasing of prestrain amount during prestraining and baking, the volume fraction of retained austenite decreases, and the volume fraction of martensite and bainite increases as well as yield strength increases; as prestrain ranges from 0 to 4%, the baking-hardening (BH) value increases; while the prestrain ranges from 4% to 16%, the BH value decreases; when the prestrain amount is 4%, the highest BH value is about 70 MPa for Si-Al-Mn TRIP steel sheet with niobium, which displays excellent baking-hardening behavior.

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The reaction of the group 14 tetrachlorides MCl4 (M = Si, Ge, Sn) with oleum (65 % SO3) at elevated temperatures led to the unique anionic complexes [M(S2O7)3]2– that show the central M atoms in coordination of three chelating S2O72– groups. The mean distances M–O within the complexes increase from 175 pm (M = Si) via 186 pm (M = Ge) up to 200 pm (M = Sn). The charge balance for the [M(S2O7)3]2– anions is achieved by alkaline metal ions A+ (A = Li, Na, K, Rb, Cs) which were implemented in the syntheses in form of their sulfates. The size of the A+ ions, i.e. their coordination requirement causes the crystallographic differences in the crystal structures, while the structure of the complex [M(S2O7)3]2– anions remains essentially unaffected. Furthermore, we were able to characterize the unique germanate Hg2[Ge(S2O7)3]Cl2 which forms when HgCl2 is added as a source for the counter cation. The Hg2+ and the Cl– ions form infinite cationic chains according to 1∞[HgCl2/2]+ which take care for the charge compensation. For selected examples of the compounds the thermal behavior has been monitored by means of thermal analyses and X-ray powder diffraction. For A being an alkaline metal the decomposition product is a mixture of the sulfates A2SO4 and the dioxides MO2, whereas Hg2[Ge(S2O7)3]Cl2 shows a more complicated decomposition. The tris-(disulfato)-silicate Na2[Si(S2O7)3] has additionally been examined by solid state 29Si and 23Na NMR spectroscopic measurements.

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Surfaces of silicon wafers implanted with N and C, respectively, and aluminum 5052 implanted with N alone by plasma immersion ion implantation WHO were probed by a nanoindentor and analyzed by the contact-angle method to provide information on surface nanohardness and wettability. Silicon nitride and silicon carbide are important ceramic materials for microelectronics, especially for high-temperature applications. These compounds can be synthesized by high-dose ion implantation. The nanohardness of a silicon sample implanted with 12-keV nitrogen PIII (with 3 X 10(17) cm(-2) dose) increased by 10% compared to the unimplanted sample, in layers deeper than the regions where the formation of the Si,N, compound occurred. A factor of 2.5 increase in hardness was obtained for C-implanted Si wafer at 35 keV (with 6 X 10(17) cm(-2) dose), again deeper than the SiC-rich layer, Both compounds are in the amorphous state and their hardness is much lower than that of the crystalline compounds, which require an annealing process after ion implantation. In the same targets, the contact angle increased by 65% and 35% for N- and C-implanted samples, respectively. Compared to the Si target, the nitrogen PIII-irradiated Al 5052 (wish 15 keV) showed negligible change in its hydrophobic character after ion implantation. Its near-surface nanohardness measurement showed a slight increase for doses of 1 X 10(17) cm(-2). We have been searching for an AlN layer of the order of 1000 A thick, using such a low-energy PIII process, but oxide formation during processing has precluded its synthesis. (C) 2002 Elsevier B.V. B.V. All rights reserved.