984 resultados para SI-GE ALLOYS


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We report ductile bulk metallic glasses based on martensitic alloys. The slowly cooled specimens contain a mixture of parent 'austenite' and martensite phase. The slightly faster cooled bulk metallic glasses with 2-5 nm sized 'austenite'-like crystalline cluster reveal high strength and large ductility (16%). Shear bands propagate in a slither mode in this spatially inhomogeneous glassy structure and undergo considerable 'thickening' from 5-25 nm. A 'stress induced displacive transformation' is proposed to be responsible for both plasticity and work-hardening-like behavior of these 'M-Glasses'.

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Hydrogen rearrangements at the H*2 complex are used as a model of low energy, local transitions in the two-hydrogen density of states of hydrogenated amorphous silicon (a-Si:H). These are used to account for the low activation energy motion of H observed by nuclear magnetic resonance, the low energy defect annealing of defects formed by bias stress in thin film transistors, and the elimination of hydrogen from the growth zone during the low temperature plasma deposition of a-Si:H. © 1998 Elsevier Science B.V. All rights reserved.

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In this paper a thermodynamic constitutive model is developed for stress induced phase transformation in single crystalline and polycrystalline shape memory alloys (SMAs). Volume fractions of different martensite variants are chosen as internal variables to describe the evolution of microstructure state in the material. This model is then used in prediction the transformation behavior of a SMA (Cu-Al-Zn-Mn) under complex thermomechanical load (including complete and incomplete transformation in mechanical cycling, and proportional/non-proportional loading). (C) 2002 Elsevier Science Ltd. All rights reserved.

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This paper presents a summary of cellular and dendritic morphologies resulting from the upward directional solidification of Al - Ni alloys in a cylindrical crucible. We analysed the coupling of solid-liquid interface morphology with natural and forced convection. The influence of natural convection was first analyzed as a function of growth parameters (solute concentration, growth rate and thermal gradient). In a second step, the influence of axial vibrations on solidification microstructure was investigated by varying vibration parameters (amplitude and frequency). Experimental results were compared to preliminary numerical simulations and a good agreement is found for natural convection. In this study, the critical role of the mushy zone in the interaction between fluid flow and solidification microstructure is pointed out.

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Mn+ irons were implanted to n-type Ge(1 1 1) single crystal at room temperature with an energy of 100 keV and a dose of 3 x 10(16) cm(-2). Subsequently annealing was performed at 400degreesC for 1 h under flowing nitrogen gas. X-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is restored after annealing. Polycrystalline germanium is formed in annealed sample. There are no new phases found except germanium. The samples surface morphologies indicate that annealed sample has island-like feature while there is no such kind of characteristic in as-implanted sample. The elemental composition of annealed sample was analyzed by Auger electron spectroscopy. It shows that manganese ions are deeply implanted into germanium substrate and the highest manganese atomic concentration is 8% at the depth of 120 nm. The magnetic properties of samples were investigated by an alternating gradient magnetometer. The annealed sample shows ferromagnetic behavior at room temperature.

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The issues and challenges of growing GaN-based structures on large area Si substrates have been studied. These include Si slip resulting from large temperature non-uniformities and cracking due to differential thermal expansion. Using an A1N nucleation layer in conjunction with an AlGaN buffer layer for stress management, and together with the interactive use of real time in-situ optical monitoring it was possible to realise flat, crack-free and uniform GaN and LED structures on 6-inch Si (111) substrates. The EL performance of processed LED devices was also studied on-wafer, giving good EL characteristics including a forward bias voltage of ∼3.5 V at 20 mA from a 500 μm × 500 μm device. © 2009 SPIE.

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We demonstrate the growth of crack-free blue and greenemitting LED structures grown on 2-inch and 6-inch Si(111) substrates by metalorganic vapour phase epitaxy (MOVPE), using AlN nucleation layers and AlGaN buffer layers for stress management. LED device performance and its dependence on threading dislocation (TD) density and emission wavelength were studied. Despite the inherently low light extraction efficiency, an output power of 1.2 mW at 50 mA was measured from a 500 μm square planar device, emitting at 455 nm. The light output decreases dramatically as the emission wavelength increases from 455 nm to 510 nm. For LED devices emitting at similar wavelength, the light output was more than doubled when the TD density was reduced from 5×1 09 cm-2 to 2×109 cm-2. Our results clearly show that high TD density is detrimental to the overall light output, highlighting the need for further TD reduction for structures grown on Si. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.

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In HCCI engines, the Air/Fuel Ratio (AFR) and Residual Gas Fraction (RGF) are difficult to control during the SI-HCCI-SI transition, and this may result in incomplete combustion and/or high pressure raise rates. As a result, there may be undesirably high engine load fluctuations. The objectives of this work are to further understand this process and develop control methods to minimize these load fluctuations. This paper presents data on instantaneous AFR and RGF measurements, both taken by novel experimental techniques. The data provides an insight into the cyclic AFR and RGF fluctuations during the switch. These results suggest that the relatively slow change in the intake Manifold Air Pressure (MAP) and actuation time of the Variable Valve Timing (VVT) are the main causes of undesired AFR and RGF fluctuations, and hence an unacceptable Net IMEP (NIMEP) fluctuation. We also found large cylinder-to-cylinder AFR variations during the transition. Therefore, besides throttle opening control and VVT shifting, cyclic and individual cylinder fuel injection control is necessary to achieve a smooth transition. The control method was developed and implemented in a test engine, and the result was a considerably reduced NIMEP fluctuation during the mode switch. The instantaneous AFR and RGF measurements could furthermore be adopted to develop more sophisticated control methods for SI-HCCI-SI transitions. © 2010 SAE International.

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The structure and chemistry of the interface between a Si(111) substrate and an AlN(0001) thin film grown by metalorganic vapor phase epitaxy have been investigated at a subnanometer scale using high-angle annular dark field imaging and electron energy-loss spectroscopy. 〈1120̄〉AlN ∥ 〈110〉Si and 〈0001〉AlN ∥ 〈111〉 Si epitaxial relations were observed and an Al-face polarity of the AlN thin film was determined. Despite the use of Al deposition on the Si surface prior to the growth, an amorphous interlayer of composition SiNx was identified at the interface. Mechanisms leading to its formation are discussed. © 2010 American Institute of Physics.

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A kind of novel Ti-based composites was developed by introducing different amounts of carbon element to the Ti-50 Cu-23 Ni-20 Sn-7 bulk metallic glass forming alloys. The thermal stability and microstructural evolution of the composites were investigated. Room temperature compression tests reveal that the composite samples with 1% and 3% (mass fraction) carbon additions have higher fracture strength and obvious plastic strain of 2 195 MPa, 3.1% and 1 913 MPa, 1.3% respectively, compared with those of the corresponding carbon-free Ti-50 Ni-20 Cu-23 Sn-7 alloys. The deformation mechanisms of the composites with improved mechanical properties were also discussed.

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The addition of silicon to hydrogenated amorphous carbon can have the advantageous effect of lowering the compressive stress, improving the thermal stability of its hydrogen and maintaining a low friction coefficient up to high humidity. Most experiments to date have been on a-C1-xSix:H alloys deposited by RF plasma enhanced chemical vapour deposition (PECVD). This method gives alloys with considerable hydrogen content and only moderate hardness. Here, we use a high plasma density source, the electron cyclotron wave resonance (ECWR) source, to prepare films with a high deposition rate. The composition and bonding in the alloys is determined by XPS, visible and UV Raman and FTIR spectroscopy. We find that it is possible to produce hard, low stress, low friction, almost humidity insensitive a-C1-xSix:H alloys with a good optical transparency and a band gap over 2 eV.

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Simple process models are applied to predict microstructural changes due to the thermal cycle imposed in friction stir welding. A softening model developed for heat-treatable aluminium alloys of the 6000 series is applied to the aerospace alloy 2014 in the peak-aged (T6) condition. It is found that the model is not readily applicable to alloy 2024 in the naturally aged (T3) temper, but the softening behaviour can still be described semi-empirically. Both analytical and numerical (finite element) thermal models are used to predict the thermal histories in trial welds. These are coupled to the microstructural model to investigate: (a) the hardness profile across the welded plate; (b) alloy softening ahead of the approaching welding tool. By incorporating the softening model applied to 6082-T6 alloy, the hardness profile of friction stir welds in dissimilar alloys is also predicted. © AFM, EDP Sciences 2005.