Temperature dependent electron transport in amorphous oxide semiconductor thin film transistors

A temperature-dependent mobility model in amorphous oxide semiconductor (AOS) thin film transistors (TFTs) extracted from measurements of source-drain terminal currents at different gate voltages and temperatures is presented. At low gate voltages, trap-limited conduction prevails for a broad range of temperatures, whereas variable range hopping becomes dominant at lower temperatures. At high gate voltages and for all temperatures, percolation conduction comes into the picture. In all cases, the temperature-dependent mobility model obeys a universal power law as a function of gate voltage. © 2011 IEEE.

P-16: Light-bias induced instability and persistent photoconductivity in in-zn-o/ga-in-zn-o thin film transistors

Stress/recovery measurements demonstrate that even highperformance passivated In-Zn-O/ Ga-In-Zn-O thin film transistors with excellent in-dark stability suffer from light-bias induced threshold voltage shift (ΔV T) and defect density changes. Visible light stress leads to ionisation of oxygen vacancy sites, causing persistent photoconductivity. This makes the material act as though it was n-doped, always causing a negative threshold voltage shift under strong illumination, regardless of the magnitude and polarity of the gate bias. © 2011 SID.

Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors

Contact resistance has a significant impact on the electrical characteristics of thin film transistors. It limits their maximum on-current and affects their subsequent behavior with bias. This distorts the extracted device parameters, in particular, the field-effect mobility. This letter presents a method capable of accounting for both the non-ohmic (nonlinear) and ohmic (linear) contact resistance effects solely based upon terminal I-V measurements. Applying our analysis to a nanocrystalline silicon thin film transistor, we demonstrate that contact resistance effects can lead to a twofold underestimation of the field-effect mobility. © 2008 American Institute of Physics.

Transparent oxide semiconductors for advanced display applications

The article discusses the progress and issues related to transparent oxide semiconductor (TOS) TFTs for advanced display and imaging applications. Amorphous oxide semiconductors continue to spark new technological developments in transparent electronics on a multitude of non-conventional substrates. Applications range from high-frame-rate interactive displays with embedded imaging to flexible electronics, where speed and transparency are essential requirements. TOS TFTs exhibit high transparency as well as high electron mobility even when fabricated at room temperature. Compared to conventional a-Si TFT technology, TOS TFTs have higher mobility and sufficiently good uniformity over large areas, similar in many ways to LTPS TFTs. Moreover, because the amorphous oxide semiconductor has higher mobility compared to that of conventional a-Si TFT technology, this allows higher-frame-rate display operation. This would greatly benefit OLED displays in particular because of the need for lower-cost higher-mobility analog circuits at every subpixel.

Challenges in visible wavelength detection using optically transparent oxide semiconductors

We discuss the development of amorphous oxide semiconductor technology for optical sensor applications. In particular, we discuss the challenges of detecting visible wavelengths using this family of materials, which are known to be optically transparent due to their relatively large bandgap energy. One of the main issues with amorphous oxide semiconductors (AOS) is the ionization of the oxygen vacancies (VO) under illumination. While this can be beneficial in terms of optical absorption and high photoconductive gain, it can give rise to persistent photoconductivity (PPC). We will present techniques to overcome the PPC, and discuss how to achieve the high photoconductive gain for image sensor applications. © 2012 IEEE.

How to achieve ultra high photoconductive gain for transparent oxide semiconductor image sensors

We present quantitative analysis of the ultra-high photoconductivity in amorphous oxide semiconductor (AOS) thin film transistors (TFTs), taking into account the sub-gap optical absorption in oxygen deficiency defects. We analyze the basis of photoconductivity in AOSs, explained in terms of the extended electron lifetime due to retarded recombination as a result of hole localization. Also, photoconductive gain in AOS photo-TFTs can be maximized by reducing the transit time associated with short channel lengths, making device scaling favourable for high sensitivity operation. © 2012 IEEE.

Localized tail state distribution in amorphous oxide transistors deduced from low temperature measurements

In this paper, we extract density of localized tail states from measurements of low temperature conductance in amorphous oxide transistors. At low temperatures, trap-limited conduction prevails, allowing extraction of the trapped carrier distribution with energy. Using a test device with a-InGaZnO channel layer, the extracted tail state energy and density at the conduction band minima are 20 meV and 2 × 10 19 cm -3 eV -1, respectively, which are consistent with values reported in the literature. Also, the field-effect mobility as a function of temperature from 77 K to 300 K is retrieved for different gate voltages, yielding the activation energy and the percolation threshold. © 2012 American Institute of Physics.

Analytical field-effect method for extraction of subgap states in thin-film transistors

We present an analytical field-effect method to extract the density of subgap states (subgap DOS) in amorphous semiconductor thin-film transistors (TFTs), using a closed-form relationship between surface potential and gate voltage. By accounting the interface states in the subthreshold characteristics, the subgap DOS is retrieved, leading to a reasonably accurate description of field-effect mobility and its gate voltage dependence. The method proposed here is very useful not only in extracting device performance but also in physically based compact TFT modeling for circuit simulation. © 2012 IEEE.

Thin film coil design considerations for wireless power transfer in flat panel display

Wireless power transfer is experimentally demonstrated by transmission between an AC power transmitter and receiver, both realised using thin film technology. The transmitter and receiver thin film coils are chosen to be identical in order to promote resonant coupling. Planar spiral coils are used because of the ease of fabrication and to reduce the metal layer thickness. The energy transfer efficiency as a function of transfer distance is analysed along with a comparison between the theoretical and the experimental results. © 2012 Materials Research Society.

Vertical CNT-Si photodiode array.

A photodiode consisting of nanopillars of thin-film silicon p-i-n on an array of vertically aligned carbon nanotubes (CNTs) with a noncontinuous cathode electrode is demonstrated. The structure exploits the intrinsic enhancement of the CNTs' electric field, which leads to reduction in the photodiode's operating voltage and response time and enhancement of optical coupling due to better light trapping, as compared with the conventional planar photodiode. These improvements translate to higher resolution and higher frame rate flat-panel imaging systems for a broad range of applications, including computed tomography and particle detection.

All-chemical vapor deposited graphene/silicon nitride TFTs

All-chemical vapor deposited silicon nitride / monolayer graphene TFTs have been fabricated. Polychromatic Raman spectroscopy shows high quality monolayer graphene channels with uniform coverage and significant interfacial doping at the source-drain contacts. Nominal mobilities of approximately 1900 cm 2V-1s-1 have been measured opening up a potentially useful platform for analogue and RFR-based applications fabricated through allchemical vapor deposition processes. © The Electrochemical Society.

Unified analytic model for current-voltage behavior in amorphous oxide semiconductor TFTs

We present a simple and semi-physical analytical description of the current-voltage characteristics of amorphous oxide semiconductor thin-film transistors in the above-threshold and sub-threshold regions. Both regions are described by single unified expression that employs the same set of model parameter values directly extracted from measured terminal characteristics. The model accurately reproduces measured characteristics of amorphous semiconductor thin film transistors in general, yielding a scatter of < 4%. © 1980-2012 IEEE.

High-performance nanowire oxide photo-thin film transistor.

A gate-modulated nanowire oxide photosensor is fabricated by electron-beam lithography and conventional dry etch processing.. The device characteristics are good, including endurance of up to 10(6) test cycles, and gate-pulse excitation is used to remove persistent photoconductivity. The viability of nanowire oxide phototransistors for high speed and high resolution applications is demonstrated, thus potentially expanding the scope of exploitation of touch-free interactive displays.

Modeling sub-threshold current-voltage characteristics in thin film transistors

In this paper, we present a physically-based compact model for the sub-threshold behavior in a TFT with an amorphous semiconductor channel. Both drift and diffusion current components are considered and combined using an harmonic average. Here, the diffusion component describes the exponential current behavior due to interfacial deep states, while the drift component is associated with presence of localized deep states formed by dangling bonds broken from weak bonds in the bulk and follows a power law. The proposed model yields good agreement with measured results. © 2013 IEEE.