886 resultados para Retrial Inventory with BMAP and Servicc Time,


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In this report, we have investigated the temperature and injection power dependent photoluminescence in self-assembled InAs/GaAs quantum dots (QDs) systems with low and high areal density, respectively. It was found that, for the high-density samples, state filling effect and abnormal temperature dependence were interacting. In particular, the injection power-induced variations were most obvious at the temperature interval where carriers transfer from small quantum dots (SQDs) to large quantum dots (LQDs). Such interplay effects could be explained by carrier population of SQDs relative to LQDs, which could be fitted well using a thermal carrier rate equation model. On the other hand, for the low density sample, an abnormal broadening of full width at half maximum (FWHM) was observed at the 15-100 K interval. In addition, the FWHM also broadened with increasing injection power at the whole measured temperature interval. Such peculiarities of low density QDs could be attributed to the exciton dephasing processes, which is similar to the characteristic of a single quantum dot. The compared interplay effects of high-and low-density QDs reflect the difference between an interacting and isolated QDs system.

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The high cycle and Very-High-Cycle Fatigue (VHCF) properties of a structural steel with smooth and notched specimens were studied by employing a rotary bending machine with frequency of 52.5 Hz. For smooth specimens, VHCF failure did occur at fatigue cycles of 7.1 x 10(8) with the related S-N curve of stepwise tendency. Scanning Electron Microscopy (SEM) was used for the observations of the fracture surfaces It shows that for smooth specimens the crack origination is surface mode in the failure regime of less than 10(7) cycles While at VHCF regime, the material failed from the nonmetallic inclusion lies in the interior of material, leading to the formation of fisheye pattern. The dimensions of crack initiation region were measured and discussed with respect to the number of cycles to failure. The mechanism analysis by means of low temperature fracture technique shows that the nonmetallic inclusion in the interior of specimen tends to debond from surrounding matrix and form a crack. The crack propagates and results to the final failure. The stress intensity factor and fatigue strength were calculated to investigate the crack initiation properties. VHCF study on the notched specimens shows that the obtained S-N curve decreases continuously. SEM analysis reveals that multiple crack origins are dominant on specimen surface and that fatigue crack tends to initiate from the surface of the specimen. Based on the fatigue tests and observations, a model of crack initiation was used to describe the transition of fatigue initiation site from subsurface to surface for smooth and notched specimens. The model reveals the influences of load, grain size, inclusion size and surface notch on the crack initiation transition. (C) 2010 Elsevier Ltd. All rights reserved

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In this paper, as an extension of minimum unsatisfied linear relations problem (MIN ULR), the minimum unsatisfied relations (MIN UR) problem is investigated. A triangle evolution algorithm with archiving and niche techniques is proposed for MIN UR problem. Different with algorithms in literature, it solves MIN problem directly, rather than transforming it into many sub-problems. The proposed algorithm is also applicable for the special case of MIN UR, in which it involves some mandatory relations. Numerical results show that the algorithm is effective for MIN UR problem and it outperforms Sadegh's algorithm in sense of the resulted minimum inconsistency number, even though the test problems are linear.

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Cross-section ratios sigma(TI)/sigma(SC) of transfer ionization (TI) to single capture (SC) of Cq+- and Oq+-He (q = 1 - 3) collisions in the energy range of 15-440 keV/u (0.8-4.2 v(Bohr)) are experimentally determined. It is shown that sigma(TI)/sigma(SC) strongly depends on the projectile velocity, and there is a maximum for E(keV/u)/q(1/2) approximate to 150. Combining the Bohr-Lindhard model and the statistical model, a theoretical estimate is presented, in reasonable agreement with the experimental data when E(keV/u)/q(1/2) > 35.

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In the present work specimens of mono-crystalline silicon carbide (4H polytype) were irradiated to three successively increasing ion fluences ranging from 7.2 x 10(14) to 6.0 x 10(16) ions/cm(2) (corresponding to the peak displacement damage of 1, 4 and 13 dpa) with Ne and Xe ions respectively with the energy of 2.3 MeV/amu. The irradiated specimens were subsequently annealed at temperatures of 1173 and 1273 K. Defect structure was investigated with transmission electron microscopy (TEM) using a cross-sectional specimen preparation technique. The typical microstructures of the annealed specimens irradiated with Ne or Xe ions to high fluences are characterized by small gas bubbles in high concentration in the peak damage region and black dots and dislocation loops (located in the basal plane) in a shallower and broader depth region. Larger dislocation loops were observed in the Xe-ion irradiated specimen than in the Ne-ion irradiated specimen at the same peak damage level. The enhanced formation of dislocation loops in the case of Xe-ion irradiation is understandable by assuming stronger inclination of heavier inert-gas atoms to occupy substitute site in the peak damage region.