40 Gb/s carrierless amplitude and phase modulation for low-cost optical datacommunication links

4 bps/Hz 40 Gb/s carrierless amplitude and phase (CAP) modulation is investigated for nextgeneration datacommunication links. The 40 Gb/s link achieves double the length of a conventional NRZ scheme, despite using a low-bandwidth source. © OSA/OFC/NFOEC 2011.

Fast low-cost FIR filter processed ECDM labels for optical label switching

A code-label recognition time of less than 500ps is demonstrated using low-cost FIRfilters. The electronically-processed label provides a control signal from an auto-correlated label. Error-free electronic code-label switching of an optical 10Gb/s signal is demonstrated. © 2010 Optical Society of America.

Carrierless amplitude and phase modulation for low-cost,high-spectral-efficiency optical datacommunication links

Carrierless amplitude and phase modulation for next-generation datacommunication links is considered for the first time. Low-cost implementation of a high-spectral-efficiency 10 Gb/s channel is demonstrated as a route to links at 40 Gb/s and beyond. © 2010 Optical Society of America.

Rapid growth cost in “all-fish” growth hormone gene transgenic carp: Reduced critical swimming speed

Evidence has accumulated that there is a trade-off between benefits and costs associated with rapid growth. A trade-off between growth rates and critical. swimming speed (U-crit) had been also reported to be common in teleost fish. We hypothesize that growth acceleration in the F-3 generation of "all-fish" growth hormone gene (GH) transgenic common carp (Cyprinus carpio L.) would reduce the swimming abilities. Growth and swimming performance between transgenic fish and non-transgenic controls were) compared. The results showed that transgenic fish had a mean body weight 1.4-1.9-fold heavier, and a mean specific growth rate (SGR) value 6%-10% higher than the controls. Transgenic fish, however, had a mean absolute U-crit (cm/s) value 22% or mean relative Ucrit (BL/s) value 24% lower than the controls. It suggested that fast-growing "all-fish" GH-transgenic carp were inferior swimmers. It is also supported that there was a trade-off between growth rates and swimming performance, i.e. faster-growing individuals had lower critical swimming speed.

A 40 Gb/s optical bus for optical backplane interconnections

Optical technologies have received large interest in recent years for use in board-level interconnects. Polymer multimode waveguides in particular, constitute a promising technology for high-capacity optical backplanes as they can be cost-effectively integrated onto conventional printed circuit boards (PCBs). This paper presents the first optical backplane demonstrator based on the use of PCB-integrated polymer multimode waveguides and a regenerative shared bus architecture. The backplane demonstrator is formed with commercially-available low-cost electronic and photonic components onto conventional FR4 substrates and comprises two opto-electronic (OE) bus modules interconnected via a prototype regenerator unit. The system enables interconnection between the connected cards over four optical channels, each operating at 10 Gb/s. Bus extension is achieved by cascading OE bus modules via 3R regenerator units, overcoming therefore the inherent limitation of optical bus topologies in the maximum number of cards that can be connected to the bus. Details of the design, fabrication, and assembly of the different parts of this optical bus backplane are presented and related optical and data transmission characterisation studies are reported. The optical layer of the OE bus modules comprises a four-channel three-card waveguide layout that is compatible with VCSEL/PD arrays and ribbon fibres. All on-board optical paths exhibit insertion losses below 13 dB and intra-channel crosstalk lower than -29 dB. The robustness of the signal distribution from the bus inputs to all respective bus output ports in the presence of input misalignment is demonstrated, while 1 dB input alignment tolerances of approximately ±10 μm are obtained. The electrical layer of the OE bus modules comprises the essential driving circuitry for 1×4 VCSEL and PD arrays and the corresponding control and power regulation circuits. The interface between the optical and electrical layers of the bus modules is achieved with simple OE connectors that enable end-fired optical coupling into and out of the on-board polymer waveguides. The backplane demonstrator achieves error-free (BER < 10-12) 10 Gb/s data transmission over each optical channel, enabling therefore, an aggregate interconnection capacity of 40 Gb/s between any connected cards. © 1983-2012 IEEE.

100 Gb/s uncooled DWDM using orthogonal coding for low-cost datacommunication links

We demonstrate a 10 x 10 Gb/s uncooled DWDM system using orthogonal coding on adjacent carriers, assuming the use of a monolithically integrated sources. A power saving of 72% is expected over traditional WDM. © 2014 OSA.

Silicon avalanche photodiodes for low cost, high loss short wavelength radio over fiber links

An APD is shown to improve the noise figure of a lossy optical link compared to a PIN-TIA combination of equivalent gain. Transmission of IEEE 802.11g WLAN signals is demonstrated with 18dB optical link loss. © 2009 Optical Society of America.

Graphene-based optical modulator realized in metamaterial split-ring resonators operating in the THz frequency range

The integration of quantum cascade lasers with devices capable of efficiently manipulating terahertz light, represents a fundamental step for many different applications. Split-ring resonators, sub-wavelength metamaterial elements exhibiting broad resonances that are easily tuned lithographically, represent the ideal route to achieve such optical control of the incident light. We have realized a design based on the interplay between metallic split rings and the electronic properties of a graphene monolayer integrated into a single device. By acting on the doping level of graphene, an active modulation of the optical intensity was achieved in the frequency range between 2.2 THz and 3.1 THz, with a maximum modulation depth of 18%.

Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 mu m

A method for fabrication of long-wavelength narrow line-width InGaAs resonant cavity enhanced (RCE) photodetectors in a silicon substrate operating at the wavelength range of 1.3-1.6 mu m has been developed. A full width at half maximum (FWHM) of 0.7 nm and a peak responsivity of 0. 16 A/W at the resonance wavelength of 1.55 mu m have been accomplished by using a thick InP layer as part of the resonant cavity. The effects of roughness and tilt of the InP layer surface, and its free carrier absorption, as well as the thickness deviation of the mirror pair on the resonance wavelength shift and the peak quantum efficiency of the RCE photodetectors are analyzed in detail, and approaches for minimizing them toward superior performance are suggested. (C) 2007 Elsevier B.V. All rights reserved.

Fabrication of low-cost and high-reflectivity bottom mirrors for Si-based micro-cavity devices

A novel and simple way to prepare high-reflectivity bottom mirrors for Si-based micro-cavity devices is reported. The bottom mirror was deposited in the hole, which was etched from the backside of the sample by ethylenediamine-pyrocatechol-water solution with the buried Sio, layer in the silicon-on-insulator substrate as the etching-stop layer. The high-reflectivity of the bottom mirror deposited in the hole and the narrow hill width at half maximum of the cavity formed by this method both indicate the successful preparation of the bottom mirror for Si-based micro-cavity devices.

8 mu m strain-compensated quantum cascade laser operating at room temperature

We report on the material growth and device performance characterization of a strain-compensated In0.54Ga0.46As/In0.51Al0.49As quantum cascade laser at lambda similar to 8 mu m. For 2 mu s pulse at a 5 kHz repetition rate, laser action is achieved up to room temperature (30 degrees C). The tuning coefficient d lambda/dT is 1.37 nm K-1 between 83 K and 163 K and 0.60 nm K-1 in the range from 183 K to 303 K. The peak output power is reported to be similar to 11.3 mW per facet at 293 K and the corresponding threshold current density is 5.69 kA cm(-2).

Realization of quantum cascade laser operating at room temperature

X-ray diffraction, as an effective probe and simple method, is used to ascertain the precise control of the epilayer thickness and composition. Intersubband absorption from the whole structure of the QC laser is used to monitor the wavelength of the QC laser and the material quality. Path for growth of high-quality InP-based InGaAs/InAlAs quantum cascade laser material is realized. The absorption between two quantized energy levels is achieved at similar to4.7 mum. Room temperature laser action is achieved at lambda approximate to 5.1 - 5.2 mum. For some devices, if the peak output power is kept at 2 mW, quasi-continuous wave operation at room temperature can persist for more than I It. (C) 2002 Elsevier Science B.V. All rights reserved.

Strain-compensated quantum cascade lasers operating at room temperature

Quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/InyAl(1-y)As grown on InP substrate using molecular beam epitaxy is reported. The epitaxial quality is demonstrated by the abundant narrow satellite peaks of double-crystal X-ray diffraction and cross-section transmission electron microscopy of the QC laser wafer. Laser action in quasi-continuous wave operation is achieved at lambda approximate to 3.6-3.7 mum at room temperature (34 degreesC) for 20 mum x 1.6 mm devices, with peak output powers of similar to 10.6mW and threshold current density of 2.7kA/cm(2) at this temperature. (C) 2000 Published by Elsevier Science B.V.

Si1-xGex/Si resonant-cavity-enhanced photodetectors with a silicon-on-oxide reflector operating near 1.3 mu m

We report on a Si1-xGex/Si multiple quantum-well resonant-cavity-enhanced (RCE) photodetector with a silicon-on-oxide reflector as the bottom mirror operating near 1.3 mu m. The breakdown voltage of the photodetector is above 18 V and the dark current density at 5 V reverse bias is 12 pA/mu m(2). The RCE photodetector shows enhanced responsivity with a clear peak at 1.285 mu m and the peak responsivity is measured around 10.2 mA/W at a reverse bias of 5 V. The external quantum efficiency at 1.3 mu m is measured to be 3.5% under reverse bias of 16 V, which is enhanced three- to fourfold compared with that of a conventional p-i-n photodetector with a Ge content of 0.5 reported in 1995 by Huang [Appl. Phys. Lett. 67, 566 (1995)]. (C) 2000 American Institute of Physics. [S0003-6951(00)00628-8].