994 resultados para Nanostructured film


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Organic thin-film transistors based on polycrystalline copper phthalocyanine (CuPc) were fabricated by using poly(vinyl alcohol) as gate dielectric. After treatment of the gate dielectric using an octadecyltrichlorosilane self-assembled monolayer, a mobility of up to 0.11 cm2/V∈s was achieved, which is comparable to that of single-crystal CuPc devices (0.1-1 cm2/V∈s). The surface morphology was analyzed and the possible reasons for the enhanced mobility are discussed. © 2009 Springer-Verlag.

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We fabricate a saturable absorber mirror by coating a graphenefilm on an output coupler mirror. This is then used to obtain Q-switched mode-locking from a diode-pumped linear cavity channel waveguide laser inscribed in Ytterbium-doped Bismuthate Glass. The laser produces 1.06 ps pulses at ∼1039 nm, with a 1.5 GHz repetition rate, 48% slope efficiency and 202 mW average output power. This performance is due to the combination of the graphene saturable absorber and the high quality optical waveguides in the laser glass. © 2013 Optical Society of America.

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Widespread approaches to fabricate surfaces with robust micro- and nanostructured topographies have been stimulated by opportunities to enhance interface performance by combining physical and chemical effects. In particular, arrays of asymmetric surface features, such as arrays of grooves, inclined pillars, and helical protrusions, have been shown to impart unique anisotropy in properties including wetting, adhesion, thermal and/or electrical conductivity, optical activity, and capability to direct cell growth. These properties are of wide interest for applications including energy conversion, microelectronics, chemical and biological sensing, and bioengineering. However, fabrication of asymmetric surface features often pushes the limits of traditional etching and deposition techniques, making it challenging to produce the desired surfaces in a scalable and cost-effective manner. We review and classify approaches to fabricate arrays of asymmetric 2D and 3D surface features, in polymers, metals, and ceramics. Analytical and empirical relationships among geometries, materials, and surface properties are discussed, especially in the context of the applications mentioned above. Further, opportunities for new fabrication methods that combine lithography with principles of self-assembly are identified, aiming to establish design principles for fabrication of arbitrary 3D surface textures over large areas. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Hybrid nanostructured materials can exhibit different properties than their constituent components, and can enable decoupled engineering of energy conversion and transport functions. Novel means of building hybrid assemblies of crystalline C 60 and carbon nanotubes (CNTs) are presented, wherein aligned CNT films direct the crystallization and orientation of C 60 rods from solution. In these hybrid films, the C 60 rods are oriented parallel to the direction of the CNTs throughout the thickness of the film. High-resolution imaging shows that the crystals incorporate CNTs during growth, yet grazing-incidence X-ray diffraction (GIXD) shows that the crystal structure of the C 60 rods is not perturbed by the CNTs. Growth kinetics of the C 60 rods are enhanced 8-fold on CNTs compared to bare Si, emphasizing the importance of the aligned, porous morphology of the CNT films as well as the selective surface interactions between C 60 and CNTs. Finally, it is shown how hybrid C 60-CNT films can be integrated electrically and employed as UV detectors with a high photoconductive gain and a responsivity of 10 5 A W -1 at low biases (± 0.5 V). The finding that CNTs can induce rapid, directional crystallization of molecules from solution may have broader implications to the science and applications of crystal growth, such as for inorganic nanocrystals, proteins, and synthetic polymers. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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It is well-known that carbon nanotube (CNT) growth from a dense arrangement of catalyst nanoparticles creates a vertically aligned CNT forest. CNT forests offer attractive anisotropic mechanical, thermal, and electrical properties, and their anisotropic structure is enabled by the self-organization of a large number of CNTs. This process is governed by individual CNT diameter, spacing, and the CNT-to-CNT interaction. However, little information is known about the self-organization of CNTs within a forest. Insight into the self-organization is, however, essential for tailoring the properties of the CNT forests for applications such as electrical interconnects, thermal interfaces, dry adhesives and energy storage. We demonstrate that arrays of CNT micropillars having micron-scale diameters organize in a similar manner as individual CNTs within a forest. For example, as previously demonstrated for individual CNTs within a forest, entanglement of small-diameter CNT micropillars during the initial stage of growth creates a film of entwined pillars. This layer enables coordinated subsequent growth of the pillars in the vertical direction, in a case where isolated pillars would not grow in a self-supporting fashion. Finally, we provide a detailed overview of the self-organization as a function of the diameter, length and spacing of the CNT pillars. This study, which is applicable to many one-dimensional nanostructured films, demonstrates guidelines for tailoring the self-organization which can enable control of the collective mechanical, electrical and interfacial properties of the films. © 2009 Elsevier B.V. All rights reserved.

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It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation. © 2013 AIP Publishing LLC.

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Contact resistance has a significant impact on the electrical characteristics of thin film transistors. It limits their maximum on-current and affects their subsequent behavior with bias. This distorts the extracted device parameters, in particular, the field-effect mobility. This letter presents a method capable of accounting for both the non-ohmic (nonlinear) and ohmic (linear) contact resistance effects solely based upon terminal I-V measurements. Applying our analysis to a nanocrystalline silicon thin film transistor, we demonstrate that contact resistance effects can lead to a twofold underestimation of the field-effect mobility. © 2008 American Institute of Physics.

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We present an analytical field-effect method to extract the density of subgap states (subgap DOS) in amorphous semiconductor thin-film transistors (TFTs), using a closed-form relationship between surface potential and gate voltage. By accounting the interface states in the subthreshold characteristics, the subgap DOS is retrieved, leading to a reasonably accurate description of field-effect mobility and its gate voltage dependence. The method proposed here is very useful not only in extracting device performance but also in physically based compact TFT modeling for circuit simulation. © 2012 IEEE.

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Wireless power transfer is experimentally demonstrated by transmission between an AC power transmitter and receiver, both realised using thin film technology. The transmitter and receiver thin film coils are chosen to be identical in order to promote resonant coupling. Planar spiral coils are used because of the ease of fabrication and to reduce the metal layer thickness. The energy transfer efficiency as a function of transfer distance is analysed along with a comparison between the theoretical and the experimental results. © 2012 Materials Research Society.

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We provide experimental evidence for a vortex migration phenomenon in YBa2Cu3O7-δ (YBCO) thin film caused by travelling magnetic wave. The experiment is carried out on a 2 in. diameter YBCO thin film with a circular-type magnetic flux pump. We found that the travelling wave helps the vortices migrate into the centre of the sample: after the zero-field cooling process, the increase of the flux density in the centre is four times larger than the amplitude of the travelling wave. The reason for this massive vortex migration is probably due to the magnetic stress variation caused by the travelling wave: the magnetic stress increases locally in the crest region while decreases locally in the trough region, which could help the vortices to move locally. A comparison shows that the magnetization by standing wave can be easily predicted by Bean's model while travelling wave causes vortex migration generally much larger than the prediction of Bean's model. It is possible that travelling magnetic wave can be an effective way to magnetize a type II superconductor in considering this unusual vortex dynamics. © 2013 AIP Publishing LLC.