Developing ISO 14649-based conversational programming system for multi-channel complex machine tools

A multi-channel complex machine tool (MCCM) is a versatile machining system equipped with more than two spindles and turrets for both turning and milling operations. Despite the potential of such a tool, the value of the hardware is largely dependent on how the machine tools are effectively programmed for machining. In this paper we consider a shop-floor programming system based on ISO 14649 (called e-CAM), the international standard for the interface between computer-aided manufacture (CAM) and computer numerical control (CNC). To be deployed in practical industrial usage a great deal of research has to be carried out. In this paper we present: 1) Design consideration for an e-CAM system, 2) The architecture design of e-CAM, 3) Major algorithms to fulfill the modules defined in the architecture, and 4) Implementation details.

Sparse recovery of complex phase-encoded velocity images using iterative thresholding

In this paper we propose a new algorithm for reconstructing phase-encoded velocity images of catalytic reactors from undersampled NMR acquisitions. Previous work on this application has employed total variation and nonlinear conjugate gradients which, although promising, yields unsatisfactory, unphysical visual results. Our approach leverages prior knowledge about the piecewise-smoothness of the phase map and physical constraints imposed by the system under study. We show how iteratively regularizing the real and imaginary parts of the acquired complex image separately in a shift-invariant wavelet domain works to produce a piecewise-smooth velocity map, in general. Using appropriately defined metrics we demonstrate higher fidelity to the ground truth and physical system constraints than previous methods for this specific application. © 2013 IEEE.

Insecticide resistance in Chinese populations of the Culex pipiens complex through esterase overproduction

In most parts of China, mosquitoes have been subjected to organophosphate (OP) insecticide treatments since the mid-1960s, and resistance gene monitoring in the Culex pipiens complex (Diptera: Culicidae) started in only a few locations from the end of the 1980s. Many resistant alleles at the Ester locus have been found in field populations, including those commonly found around the world (Ester(B1) and Ester(2)), and those endemic to China (Ester(B6), Ester(B7), Ester(8), and Ester(9)). This situation is atypical, and may represent a complex situation for the evolution of insecticide resistance genes in China. To increase our understanding of the Chinese situation and our ability to manage resistance in the C. pipiens complex, a large study was performed. Twenty field populations were sampled from Beijing to Guangzhou. Bioassays with five insecticides (dichlorvos, parathion, chlorpyrifos, 2-sec-butylphenyl methyl carbamate, and propoxur) disclosed resistance levels variable according to the geographic origin, and up to 85-fold for dichlorvos. Six overproduced esterases were identified, including two that have not been previously described. Most of them were found in all samples, although at variable frequencies, suggesting variable selection or a transient situation, e.g., each one was recently restricted to a particular geographic area. The results are discussed in the context of recent alterations to insecticide campaigns, and of the evolution of resistance genes in Chinese C. pipiens populations.

Photoreduction of mercuric salt in UV/Fe (III)-oxalate complex system

In this paper, the photochemical reduction process of Hg (II) in aqueous solution containing ferric iron and oxalate (Ox) has been studied. Under the radiation of a low-pressure mercury lamp (lambda = 253.7 nm, 8W), Fe(III)-oxalate complexes undergo photolysis to produce ferrous ions and other organic reductive species, which reduce Hg(II) subsequently. For 0.1 mg/L Hg (II), the photoreduction efficiency is comparatively higher in the solution at pH 5.0 than that over the range of 3.0 similar to 8.0. The photoreduction efficiency of Ho (II) in aqueous solution increases with increasing, initial concentration of ferric ions from 0.02 mmol/L to 0.2 mmol/L and initial concentration of oxalate from 0.96 mmol/L to 4.8 mmol/L and then gradually approaches to a steady state. CH3OH also contributes the reduction of Hg (II). We investigate the increase of the ferric, oxalate and CH3OH concentrations resulting from the increase of reduction efficiency of Hg (II). It can be seen that ferrous ions and other reactive species are reductants of Hg (II), and the reaction product with oxalate is mainly volatile metallic mercury.

Complex mutation at a microsatellite locus in sturgeons: Acipenser sinensis, A-schrenckii, A-gueldenstaedtii and A-baerii

Cross-species amplifications of microsatellite locus Spl-106, which was originally screened from the genome of shovelnose sturgeon (Scaphirhynchus platorynchus) with a perfect TAGA repeat motif, were carried out in four other species of the genera Acipenser. A total of 34 polymerase chain reaction (PCR) products representing 16 different alleles of this locus was sequenced. Sequence analysis results showed that besides the number changes of repeat units, many mutational events, such as single-base substitutions and various insertion/deletion (indels) occurred not only at species level but also at individual level, even among the different alleles within the same individual. The repeat motifs varied from perfect (TAGA)n array to perfect compound (TAAA)m (GAAA)n and perfect or imperfect compound (TAAA)m (TAGA)n (TAAA)x arrays in different species and different individuals. The evolution dynamics of this locus in sturgeons was inferred in that it may evolve from a single perfect to different perfect or imperfect compounds.

Large-payload climbing in complex vertical environments using thermoplastic adhesive bonds

Despite many approaches proposed in the past, robotic climbing in a complex vertical environment is still a big challenge. We present here an alternative climbing technology that is based on thermoplastic adhesive (TPA) bonds. The approach has a great advantage because of its large payload capacity and viability to a wide range of flat surfaces and complex vertical terrains. The large payload capacity comes from a physical process of thermal bonding, while the wide applicability benefits from rheological properties of TPAs at higher temperatures and intermolecular forces between TPAs and adherends when being cooled down. A particular type of TPA has been used in combination with two robotic platforms, featuring different foot designs, including heating/cooling methods and construction of footpads. Various experiments have been conducted to quantitatively assess different aspects of the approach. Results show that an exceptionally high ratio of 500% between dynamic payloads and body mass can be achieved for stable and repeatable vertical climbing on flat surfaces at a low speed. Assessments on four types of typical complex vertical terrains with a measure, i.e., terrain shape index ranging from -0.114 to 0.167, return a universal success rate of 80%-100%. © 2004-2012 IEEE.

Mass chains with passive interconnection: Complex iterative maps and scalability

This paper introduces the problem of passive control of a chain of N identical masses in which there is an identical passive connection between neighbouring masses and a similar connection to a movable point. The problem arises in the design of multi-storey buildings which are subjected to earthquake disturbances, but applies in other situations, for example vehicle platoons. The paper will study the scalar transfer functions from the disturbance to a given intermass displacement. It will be shown that these transfer functions can be conveniently represented in the form of complex iterative maps and that these maps provide a method to establish boundedness in N of the H ∞-norm of these transfer functions for certain choices of interconnection impedance. © 2013 IEEE.

Application of sampled grating to control the lasing wavelength in complex-coupled DFB laser

This paper reports that the complex-coupled distributed feedback laser with the sampled grating has been designed and fabricated. The +1st order reflection of the sampled grating is utilized for laser single mode operation, which is 1.5387 mu m in the experiment. The typical threshold current of the device is 30 mA, and the optical output power is about 10 mW at the injection current of 100 mA.

Integratable and High Speed Complex-Coupled MQW-DFB Lasers Fabricated on Semi-Insulating Substrates

A novel integratable and high speed InGaAsP multi-quantum well (MQW) complex-coupled distributed feedback (DFB) laser is successfully fabricated on a semi-insulating substrate. The fabricated ridge DFB laser exhibits a threshold current of 26 mA, a slope efficiency of 0.14 W.A(-1) and a side mode suppression ratio of 40 dB together with a 3 dB bandwidth of more than 8 GHz. The device is suitable for 10 Gbit/s optical fiber communication.

Control of the lasing wavelength by a sampled grating in a complex-coupled DFB laser

The lasing wavelength of a complex-coupled DFB laser is controlled by a sampled grating. The key concepts of the approach are to utilize the -1st order (negative first order) reflection of a sampled grating for laser single mode operation, and use conventional holographic exposure combined with the usual photolithography to fabricate the sampled grating. The typical threshold current of the sampled grating based DFB laser is 32 mA, and the optical output is about 10 mW at an injected current of 100 mA. The lasing wavelength of the device is 1.5356 mu m, which is the -1st order wavelength of the sampled grating.

Comparison of the properties of GaN grown on complex Si-based structures

With the aim of investigating the possible integration of optoelectronic devices, epitaxial GaN layers have been grown on Si(Ill) semiconductor-on-insulator (SOI) and on Si/CoSi2/Si(111) using metalorganic chemical vapor deposition. The samples are found to possess a highly oriented wurtzite structure, a uniform thickness, and abrupt interfaces. The epitaxial orientation is determined as GaN(0001)//Si(111), GaN[1120]//Si[110], and GaN[1010]//Si[112], and the GaN layer is tensilely strained in the direction parallel to the interface. According to Rutherford backscattering/channeling spectrometry and (0002) rocking curves, the crystalline quality of GaN on Si(111) SOI is better than that of GaN on silicide. Room-temperature photoluminescence of GaN/SOI reveals a strong near-band-edge emission at 368 nm (3.37 eV) with a full width at half-maximum of 59 meV. (c) 2005 American Institute of Physics.

Complex quantum ring structures formed by droplet epitaxy

Well-defined complex quantum ring structures formed by droplet epitaxy are demonstrated. By varying the temperature of the crystallizing Ga droplets and changing the As flux, GaAs/AlGaAs quantum single rings and concentric quantum double rings are fabricated, and double-ring complexes are observed. The growth mechanism of these quantum ring complexes is addressed. (c) 2006 American Institute of Physics.

A complex Fourier transformation study of the contactless electroreflectance of an undoped-n(+) GaAs structure

Complex Fourier transformation (CFT) has been employed to analyse contactless electroreflectance (CER) spectra from an undoped-n(+) GaAs structure with various ac modulations and dc bias voltages. The CFT spectra of CER have been compared with those of photoreflectance (PR). It has been found that the CER non-flat modulation is between the built-in electric field and a larger electric field which increases with the modulation voltage. The result has been explained by the screening of the applied modulation electric field in one of the two half modulation cycles and the trapping of electrons in surface states in the other half modulation cycle. The dc bias does not change the CER spectra, hence their CFT spectra. This is because of the screening of the applied dc bias electric field.

Epitaxial growth of SiC on complex substrates

Epitaxial growth of SiC on complex substrates was carried out at substrate temperature from 1200 degreesC to 1400 degreesC. Three kinds of new complex substrates, c-plane sapphire, AlN/sapphire, and GaN/AlN/sapphire, were used in this study. We obtained a growth rate in the range of 1-6 mum/h. Thick (6 mum) SIC epitaxial layers with no cracks were successfully obtained on AlN/sapphire and GaN/AlN/sapphire substrates. X-ray diffraction patterns have confirmed that single-crystal SiC was obtained on these complex substrates. Analysis of optical transmission spectra of the SIC grown on sapphire substrates shows the lowest-energy gap near 2.2 eV, which is the value for cubic SiC. The undoped SIC showed n-type electrical conductivity. (C) 2001 Elsevier Science B.V. All rights reserved.