Stress-induced domain dynamics and phase transitions in epitaxially grown VO₂ nanowires.

We demonstrate that surface stresses in epitaxially grown VO₂ nanowires (NWs) have a strong effect on the appearance and stability of intermediate insulating M₂ phases, as well as the spatial distribution of insulating and metallic domains during structural phase transitions. During the transition from an insulating M1 phase to a metallic R phase, the coexistence of insulating M₁ and M₂ phases with the absence of a metallic R phase was observed at atmospheric pressure. In addition, we show that, for a VO₂ NW without the presence of an epitaxial interface, surface stresses dominantly lead to spatially inhomogeneous phase transitions between insulating and metallic phases. In contrast, for a VO₂ NW with the presence of an epitaxial interface, the strong epitaxial interface interaction leads to additional stresses resulting in uniformly alternating insulating and metallic domains along the NW length.

Effects of nonuniform reactant stoichiometry on thermoacoustic instability in a lean-premixed gas turbine combustor

Detailed experimental investigations of the amplitude dependence of flame describing functions (FDF) were performed using a stratified swirl-stabilized combustor, in order to understand the combustion-acoustic interactions of CH4/air flames propagating into nonhomogeneous reactant stoichiometry. Phase-synchronized OH planar laser induced fluorescence (OH PLIF) measurements were used to investigate local reaction zone structures of forced flames. To determine the amplitude-and frequency-dependent forced flame response, simultaneous measurements of inlet velocity and heat release rate oscillations were made using a constant temperature anemometer and photomultiplier tubes with narrow-band OH*/CH* interference filters. The measurements were made over a wide range of stratification ratios, including inner stream enrichment ( θ o>θ i) and outer stream enrichment ( θ o>θ i)) conditions, and compared to the baseline condition of spatially and temporally homogeneous cases ( θ o=θ i)). Results show that for the inlet conditions investigated, fuel stratification has a significant influence on local and global flame structures of unforced and forced flames. Under stratified conditions, length scales of local contours were found to be much larger than the homogeneous case due to high kinematic viscosities associated with high temperature. Stratification has a remarkable effect on flame-vortex interactions when the flame is subjected to high-amplitude acoustic forcing, leading to different evolution patterns of FDF (amplitude and disturbance convective time) in response to the amplitude of the imposed inlet velocity oscillation. The present experimental investigation reveals that intentional stratification has the potential to eliminate or suppress the occurrence of detrimental combustion instability problems in lean-premixed gas turbine combustion systems. © 2012 Copyright Taylor and Francis Group, LLC.

Light-bias induced instability and persistent photoconductivity in In-Zn-O/Ga-In-Zn-O thin film transistors

Stress/recovery measurements demonstrate that even high-performance passivated In-Zn-O/ Ga-In-Zn-O thin film transistors with excellent in-dark stability suffer from light-bias induced threshold voltage shift (ΔV T) and defect density changes. Visible light stress leads to ionisation of oxygen vacancy sites, causing persistent photoconductivity. This makes the material act as though it was n-doped, always causing a negative threshold voltage shift under strong illumination, regardless of the magnitude and polarity of the gate bias.

Study of second generation, high-temperature superconducting coils: Determination of critical current

This paper presents the modeling of second generation (2 G) high-temperature superconducting (HTS) pancake coils using finite element method. The axial symmetric model can be used to calculate current and magnetic field distribution inside the coil. The anisotropic characteristics of 2 G tapes are included in the model by direct interpolation. The model is validated by comparing to experimental results. We use the model to study critical currents of 2 G coils and find that 100μV/m is too high a criterion to determine long-term operating current of the coils, because the innermost turns of a coil will, due to the effect of local magnetic field, reach their critical current much earlier than outer turns. Our modeling shows that an average voltage criterion of 20μV/m over the coil corresponds to the point at which the innermost turns' electric field exceeds 100μV/m. So 20μV/m is suggested to be the critical current criterion of the HTS coil. The influence of background field on the coil critical current is also studied in the paper. © 2012 American Institute of Physics.

Closing the gap: Improved bounds on optimal POMDP solutions

POMDP algorithms have made significant progress in recent years by allowing practitioners to find good solutions to increasingly large problems. Most approaches (including point-based and policy iteration techniques) operate by refining a lower bound of the optimal value function. Several approaches (e.g., HSVI2, SARSOP, grid-based approaches and online forward search) also refine an upper bound. However, approximating the optimal value function by an upper bound is computationally expensive and therefore tightness is often sacrificed to improve efficiency (e.g., sawtooth approximation). In this paper, we describe a new approach to efficiently compute tighter bounds by i) conducting a prioritized breadth first search over the reachable beliefs, ii) propagating upper bound improvements with an augmented POMDP and iii) using exact linear programming (instead of the sawtooth approximation) for upper bound interpolation. As a result, we can represent the bounds more compactly and significantly reduce the gap between upper and lower bounds on several benchmark problems. Copyright © 2011, Association for the Advancement of Artificial Intelligence. All rights reserved.

Multiple color reflection in a single unit cell using double-layer electrochromic reaction

Multiple color states have been realized in single unit cell using double electrochromic (EC) reaction. The precise control of bistability in EC compounds which can maintain several colors on the two separated electrodes allows this new type of pixel to be realized. The specific electrical driving gives a way to maintain both sides in the reduced EC states and this colors overlapping in the vertical view direction can achieve the black state. The four color states (G, B, W, BK) in one cell/pixel can make a valuable progress to achieve a high quality color devices such like electronic paper, outdoor billboard, smart window and flexible display using external light source. © 2012 Optical Society of America.

Silhouette-based object phenotype recognition using 3D shape priors

This paper tackles the novel challenging problem of 3D object phenotype recognition from a single 2D silhouette. To bridge the large pose (articulation or deformation) and camera viewpoint changes between the gallery images and query image, we propose a novel probabilistic inference algorithm based on 3D shape priors. Our approach combines both generative and discriminative learning. We use latent probabilistic generative models to capture 3D shape and pose variations from a set of 3D mesh models. Based on these 3D shape priors, we generate a large number of projections for different phenotype classes, poses, and camera viewpoints, and implement Random Forests to efficiently solve the shape and pose inference problems. By model selection in terms of the silhouette coherency between the query and the projections of 3D shapes synthesized using the galleries, we achieve the phenotype recognition result as well as a fast approximate 3D reconstruction of the query. To verify the efficacy of the proposed approach, we present new datasets which contain over 500 images of various human and shark phenotypes and motions. The experimental results clearly show the benefits of using the 3D priors in the proposed method over previous 2D-based methods. © 2011 IEEE.

Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

The composition of amorphous oxide semiconductors, which are well known for their optical transparency, can be tailored to enhance their absorption and induce photoconductivity for irradiation with green, and shorter wavelength light. In principle, amorphous oxide semiconductor-based thin-film photoconductors could hence be applied as photosensors. However, their photoconductivity persists for hours after illumination has been removed, which severely degrades the response time and the frame rate of oxide-based sensor arrays. We have solved the problem of persistent photoconductivity (PPC) by developing a gated amorphous oxide semiconductor photo thin-film transistor (photo-TFT) that can provide direct control over the position of the Fermi level in the active layer. Applying a short-duration (10 ns) voltage pulse to these devices induces electron accumulation and accelerates their recombination with ionized oxygen vacancy sites, which are thought to cause PPC. We have integrated these photo-TFTs in a transparent active-matrix photosensor array that can be operated at high frame rates and that has potential applications in contact-free interactive displays. © 2012 Macmillan Publishers Limited. All rights reserved.

Dual gate photo-thin film transistor with high photoconductive gain for high reliability, and low noise flat panel transparent imager

In this presentation, we report excellent electrical and optical characteristics of a dual gate photo thin film transistor (TFT) with bi-layer oxide channel, which was designed to provide virgin threshold voltage (V T) control, improve the negative bias illumination temperature stress (NBITS) reliability, and offer high photoconductive gain. In order to address the photo-sensitivity of phototransistor for the incoming light, top transparent InZnO (IZO) gate was employed, which enables the independent gate control of dual gate photo-TFT without having any degradation of its photosensitivity. Considering optimum initial V T and NBITS reliability for the device operation, the top gate bias was judiciously chosen. In addition, the speed and noise performance of the photo-TFT is competitive with silicon photo-transistors, and more importantly, its superiority lies in optical transparency. © 2011 IEEE.

Temperature dependent electron transport in amorphous oxide semiconductor thin film transistors

A temperature-dependent mobility model in amorphous oxide semiconductor (AOS) thin film transistors (TFTs) extracted from measurements of source-drain terminal currents at different gate voltages and temperatures is presented. At low gate voltages, trap-limited conduction prevails for a broad range of temperatures, whereas variable range hopping becomes dominant at lower temperatures. At high gate voltages and for all temperatures, percolation conduction comes into the picture. In all cases, the temperature-dependent mobility model obeys a universal power law as a function of gate voltage. © 2011 IEEE.

Spontaneous induction of the uniform lying helix alignment in bimesogenic liquid crystals for the flexoelectro-optic effect

Using in-plane electric fields, the electrical induction of the uniform lying helix (ULH) alignment in chiral nematic liquid crystals is reported. This process permits spontaneous induction of the ULH alignment to give an in-plane optic axis, without the need for complex processing. Flexoelectro-optic switching is subsequently obtained by holding the in-plane electrodes at a common voltage and addressing via a third, plane-parallel electrode on a second, or upper, substrate to give a field across the device in the viewing direction. For this device, in optimized bimesogenic materials, we demonstrate full intensity modulation and sub-millisecond response times at typical device temperatures. © 2012 American Institute of Physics.

MCBoost: Multiple classifier boosting for perceptual co-clustering of images and visual features

We present a new co-clustering problem of images and visual features. The problem involves a set of non-object images in addition to a set of object images and features to be co-clustered. Co-clustering is performed in a way that maximises discrimination of object images from non-object images, thus emphasizing discriminative features. This provides a way of obtaining perceptual joint-clusters of object images and features. We tackle the problem by simultaneously boosting multiple strong classifiers which compete for images by their expertise. Each boosting classifier is an aggregation of weak-learners, i.e. simple visual features. The obtained classifiers are useful for object detection tasks which exhibit multimodalities, e.g. multi-category and multi-view object detection tasks. Experiments on a set of pedestrian images and a face data set demonstrate that the method yields intuitive image clusters with associated features and is much superior to conventional boosting classifiers in object detection tasks.

Magnetophonon resonance in graphite: High-field Raman measurements and electron-phonon coupling contributions

We perform Raman scattering experiments on natural graphite in magnetic fields up to 45 T, observing a series of peaks due to interband electronic excitations over a much broader magnetic field range than previously reported. We also explore electron-phonon coupling in graphite via magnetophonon resonances. The Raman G peak shifts and splits as a function of magnetic field, due to the magnetically tuned coupling of the E 2g optical phonons with the K- and H-point inter-Landau-level excitations. The analysis of the observed anticrossing behavior allows us to determine the electron-phonon coupling for both K- and H-point carriers. In the highest field range (>35 T) the G peak narrows due to suppression of electron-phonon interaction. © 2012 American Physical Society.

P-16: Light-bias induced instability and persistent photoconductivity in in-zn-o/ga-in-zn-o thin film transistors

Stress/recovery measurements demonstrate that even highperformance passivated In-Zn-O/ Ga-In-Zn-O thin film transistors with excellent in-dark stability suffer from light-bias induced threshold voltage shift (ΔV T) and defect density changes. Visible light stress leads to ionisation of oxygen vacancy sites, causing persistent photoconductivity. This makes the material act as though it was n-doped, always causing a negative threshold voltage shift under strong illumination, regardless of the magnitude and polarity of the gate bias. © 2011 SID.