902 resultados para High input power


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Wavelength bistability and tunability are demonstrated in a two-sectional quantum-dot mode-locked laser with a nonidentical capping layer structure. The continuous wave output power of 30 mW (25 mW) and mode-locked average power of 27 mW (20 mW) are achieved for 1245 nm (1295 nm) wavelengths, respectively, under the injection current of 300 mA. The largest switching range of more than 50 nm and wavelength tuning range with picosecond pulses and stable lasing wavelengths between 1245 and 1295 nm are demonstrated for gain current of 300 and 330 mA. © 1995-2012 IEEE.

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This paper presents the current status of our research in mode-locked quantum-dot edge-emitting laser diodes, particularly highlighting the recent progress in spectral and temporal versatility of both monolithic and external-cavity laser configurations. Spectral versatility is demonstrated through broadband tunability and novel mode-locking regimes that involve distinct spectral bands, such as dual-wavelength mode-locking, and robust high-power wavelength bistability. Broad tunability of the pulse repetition rate is also demonstrated for an external-cavity mode-locked quantum-dot laser, revealing a nearly constant pulse peak power at different pulse repetition rates. High-energy and low-noise pulse generations are demonstrated for low-pulse repetition rates. These recent advances confirm the potential of quantum-dot lasers as versatile, compact, and low-cost sources of ultrashort pulses. © 2011 IEEE.

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A record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser with a tuning range of 202 nm (1122 nm-1324 nm) is demonstrated. A maximum output power of 480 mW and a side-mode suppression ratio greater than 45 dB are achieved in the central part of the tuning range. We exploit a number of strategies for enhancing the tuning range of external cavity quantum-dot lasers. Different waveguide designs, laser configurations and operation conditions (pump current and temperature) are investigated for optimization of output power and tunability. (C) 2010 Optical Society of America

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A negative input-resistance compensator is designed to stabilize a power electronic brushless dc motor drive with constant power-load characteristics. The strategy is to feed a portion of the changes in the dc-link voltage into the current control loop to modify the system input impedance in the midfrequency range and thereby to damp the input filter. The design process of the compensator and the selection of parameters are described. The impact of the compensator is examined on the motor-controller performance, and finally, the effectiveness of the controller is verified by simulation and experimental testing.

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We report on high power issues related to the reliability of fibre Bragg gratings inscribed with an infrared femtosecond laser using the point-by-point writing method. Conventionally, fibre Bragg gratings have usually been written in fibres using ultraviolet light, either holographically or using a phase mask. Since the coating is highly absorbing in the UV, this process normally requires that the protective polymer coating is stripped prior to inscription, with the fibre then being recoated. This results in a time consuming fabrication process that, unless great care is taken, can lead to fibre strength degradation, due to the presence of surface damage. The recent development of FBG inscription using NIR femtosecond lasers has eliminated the requirement for the stripping of the coating. At the same time the ability to write gratings point-by-point offers the potential for great flexibility in the grating design. There is, however, a requirement for reliability testing of these gratings, particularly for use in telecommunications systems where high powers are increasingly being used in long-haul transmission systems making use of Raman amplification. We report on a study of such gratings which has revealed the presence of broad spectrum power losses. When high powers are used, even at wavelengths far removed from the Bragg condition, these losses produce an increase in the fibre temperature due to absorption in the coating. We have monitored this temperature rise using the wavelength shift in the grating itself. At power levels of a few watts, various temperature increases were experienced ranging from a few degrees up to the point where the buffer completely melts off the fibre at the grating site. Further investigations are currently under way to study the optical loss mechanisms in order to optimise the inscription mechanism and minimise such losses.

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The joint effect of fiber chromatic dispersion and fiber nonlinearity onto single-sideband and double-sideband modulated radio-over-fiber links is investigated. Experimental and simulated results show that modulation suppression caused by the chromatic dispersion in radio-over-fiber links can be successfully eliminated in both schemes only when the system is in the linear regime. Under nonlinear transmission the received microwave carrier power depends on the optical incident power.

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The modulation instability (MI) is one of the main factors responsible for the degradation of beam quality in high-power laser systems. The so-called B-integral restriction is commonly used as the criteria for MI control in passive optics devices. For amplifiers the adiabatic model, assuming locally the Bespalov-Talanov expression for MI growth, is commonly used to estimate the destructive impact of the instability. We present here the exact solution of MI development in amplifiers. We determine the parameters which control the effect of MI in amplifiers and calculate the MI growth rate as a function of those parameters. The safety range of operational parameters is presented. The results of the exact calculations are compared with the adiabatic model, and the range of validity of the latest is determined. We demonstrate that for practical situations the adiabatic approximation noticeably overestimates MI. The additional margin of laser system design is quantified. © 2010 Optical Society of America.

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As shown recently, a long telecommunication fibre may be treated as a natural one-dimensional random system, where lasing is possible due to a combination of random distributed feedback via Rayleigh scattering by natural refractive index inhomogeneities and distributed amplification through the Raman effect. Here we present a new type of a random fibre laser with a narrow (∼1 nm) spectrum tunable over a broad wavelength range (1535-1570 nm) with a uniquely flat (∼0.1 dB) and high (>2 W) output power and prominent (>40 %) differential efficiency, which outperforms traditional fibre lasers of the same category, e.g. a conventional Raman laser with a linear cavity formed in the same fibre by adding point reflectors. Analytical model is proposed that explains quantitatively the higher efficiency and the flatter tuning curve of the random fiber laser compared to conventional one. The other important features of the random fibre laser like "modeless" spectrum of specific shape and corresponding intensity fluctuations as well as the techniques of controlling its output characteristics are discussed. Outstanding characteristics defined by new underlying physics and the simplicity of the scheme implemented in standard telecom fibre make the demonstrated tunable random fibre laser a very attractive light source both for fundamental science and practical applications such as optical communication, sensing and secure transmission. © 2012 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

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Communication between power converters is vital for high performance DC micro-grids controls. However, for residential DC micro-grid applications, using external communication link would increase the system cost, and reduce the system flexibility and reliability. This paper presents a novel method to enable the conventional DC/DC converters to transmit data via the common DC Bus. With this technology, cost-effective low bandwidth communication links between power converters can be established within a DC micro-grid, and advanced distributed control algorithms can be developed. A reliable communication with 2 kbps transmission rate has been implemented between the Boost converters through the common input DC bus.

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Environmentally stable high-power erbium fiber soliton lasers are constructed by Kerr or carrier-type mode locking. We obtain high-energy pulses by using relatively short fiber lengths and providing large amounts of negative dispersion with chirped fiber Bragg gratings. The pulse energies and widths generated with both types of soliton laser are found to scale with the square root of the cavity dispersion. Kerr mode locking requires pulses with an approximately three times higher nonlinear phase shift in the cavity than carrier mode locking, which leads to the generation of slightly shorter pulses with as much as seven times higher pulse energies at the mode-locking threshold.

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In this letter, we report on a high-power operation of an optically pumped quantum-dot semiconductor disk laser designed for emission at 1180 nm. As a consequence of the optimization of the operation conditions, a record-high continuous-wave output power exceeding 7 W is obtained for this wavelength at a heat-sink temperature of 2 °C. A wavelength tuning over a range of 37 nm is achieved using a birefringent filter inside the cavity.

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Internal quantum efficiency (IQE) of a high-brightness blue LED has been evaluated from the external quantum efficiency measured as a function of current at room temperature. Processing the data with a novel evaluation procedure based on the ABC-model, we have determined separately IQE of the LED structure and light extraction efficiency (LEE) of UX:3 chip. Full text Nowadays, understanding of LED efficiency behavior at high currents is quite critical to find ways for further improve­ment of III-nitride LED performance [1]. External quantum ef­ficiency ηe (EQE) provides integral information on the recom­bination and photon emission processes in LEDs. Meanwhile EQE is the product of IQE ηi and LEE ηext at negligible car­rier leakage from the active region. Separate determination of IQE and LEE would be much more helpful, providing correla­tion between these parameters and specific epi-structure and chip design. In this paper, we extend the approach of [2,3] to the whole range of the current/optical power variation, provid­ing an express tool for separate evaluation of IQE and LEE. We studied an InGaN-based LED fabricated by Osram OS. LED structure grown by MOCVD on sapphire substrate was processed as UX:3 chip and mounted into the Golden Dragon package without molding. EQE was measured with Labsphere CDS-600 spectrometer. Plotting EQE versus output power P and finding the power Pm corresponding to EQE maximum ηm enables comparing the measurements with the analytical rela­tionships ηi = Q/(Q+p1/2+p-1/2) ,p = P/Pm , and Q = B/(AC) 1/2 where A, Band C are recombination constants [4]. As a result, maximum IQE value equal to QI(Q+2) can be found from the ratio ηm/ηe plotted as a function of p1/2 +p1-1/2 (see Fig.la) and then LEE calculated as ηext = ηm (Q+2)/Q . Experimental EQE as a function of normalized optical power p is shown in Fig. 1 b along with the analytical approximation based on the ABC­model. The approximation fits perfectly the measurements in the range of the optical power (or operating current) variation by eight orders of magnitude. In conclusion, new express method for separate evaluation of IQE and LEE of III-nitride LEDs is suggested and applied to characterization of a high-brightness blue LED. With this method, we obtained LEE from the free chip surface to the air as 69.8% and IQE as 85.7% at the maximum and 65.2% at the operation current 350 rnA. [I] G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, "Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies," 1. AppL Phys., vol. 114, no. 7, pp. 071101, Aug., 2013. [2] C. van Opdorp and G. W. 't Hooft, "Method for determining effective non radiative lifetime and leakage losses in double-heterostructure las­ers," 1. AppL Phys., vol. 52, no. 6, pp. 3827-3839, Feb., 1981. [3] M. Meneghini, N. Trivellin, G. Meneghesso, E. Zanoni, U. Zehnder, and B. Hahn, "A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes," 1. AppL Phys., vol. 106, no. II, pp. 114508, Dec., 2009. [4] Qi Dai, Qifeng Shan, ling Wang, S. Chhajed, laehee Cho, E. F. Schubert, M. H. Crawford, D. D. Koleske, Min-Ho Kim, and Yongjo Park, "Carrier recombination mechanisms and efficiency droop in GalnN/GaN light-emitting diodes," App/. Phys. Leu., vol. 97, no. 13, pp. 133507, Sept., 2010. © 2014 IEEE.

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Tunable Raman fiber lasers have attracted great interest owing to their high efficiency and reliability important for applications, such as optical fiber communications and sensing, spectroscopy, and instrument testing. Their tuning range is defined by the Raman gain bandwidth amounting to about 40 nm in telecom spectral range (∼1550 nm) for conventional silica single mode fibers (SMF). To increase the range, highly nonlinear fibers which broaden pump spectrum may be incorporated in the cavity of Raman fiber lasers, see e.g. [1]. Another approach is to involve Rayleigh scattering forming random distributed feedback in a relatively long fiber resulting in prominent flattening of the tuning curve [2]. In this paper we report on combination of these two techniques in tunable Raman fiber lasers thus providing great improvement of their output characteristics. © 2013 IEEE.

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We have proposed and demonstrated a Q-switched Thulium doped bre laser (TDFL) with a ‘Yin-Yang’ all- bre cavity scheme based on a combination of nonlinear optical loop mirror (NOLM) and nonlinear ampli ed loop mirror (NALM). Unidirectional lasing operation has been achieved without any intracavity isolator. By using a carbon nanotube polymer composite based saturable absorber (SA), we demonstrated the laser output power of ~197 mW and pulse energy of 1.7 μJ. To the best of our knowledge, this is the highest output power from a nanotube polymer composite SA based Q-switched Thulium doped bre laser.