960 resultados para Geografía universal
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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The thermal dependence of the zero-bias conductance for the single electron transistor is the target of two independent renormalization-group approaches, both based on the spin-degenerate Anderson impurity model. The first approach, an analytical derivation, maps the Kondo-regime conductance onto the universal conductance function for the particle-hole symmetric model. Linear, the mapping is parametrized by the Kondo temperature and the charge in the Kondo cloud. The second approach, a numerical renormalization-group computation of the conductance as a function the temperature and applied gate voltages offers a comprehensive view of zero-bias charge transport through the device. The first approach is exact in the Kondo regime; the second, essentially exact throughout the parametric space of the model. For illustrative purposes, conductance curves resulting from the two approaches are compared.
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Introduction: The aim of this study was to assess the occurrence of apical root transportation after the use of Pro Taper Universal rotary files sizes 3 (F3) and 4 (F4). Methods: Instruments were worked to the apex of the original canal, always by the same operator. Digital subtraction radiography images were produced in buccolingual and mesiodistal projections. A total of 25 radiographs were taken from root canals of human maxillary first molars with curvatures varying from 23-31 degrees. Quantitative data were analyzed by intraclass correlation coefficient and Wilcoxon nonparametric test (P = .05). Results: Buccolingual images revealed a significantly higher degree of apical transportation associated with F4 instruments when compared with F3 instruments in relation to the original canal (Wilcoxon test, P = .007). No significant difference was observed in mesiodistal images (P = .492). Conclusions: F3 instruments should be used with care in curved canals, and F4 instruments should be avoided in apical third preparation of curved canals. (J Endod 2010;36:1052-1055)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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The parametric region in the plane defined by the ratios of the energies of the subsystems and the three-body ground state, in which Efimov states can exist, is determined. We use a renormalizable model that guarantees the general validity of our results in the context of short-range interactions. The experimental data for one-and two-neutron separation energies, implies that among the halo nuclei candidates, only 20C has a possible Efimov state, with an estimated energy less than 14 KeV below the scattering threshold.
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The solutions of a renormalized BCS equation are studied in three space dimensions in s, p and d waves for finite-range separable potentials in the weak to medium coupling region. In the weak-coupling limit, the present BCS model yields a small coherence length ξ and a large critical temperature, T c, appropriate for some high-T c materials. The BCS gap, T c, ξ and specific heat C s(T c) as a function of zero-temperature condensation energy are found to exhibit potential-independent universal scalings. The entropy, specific heat, spin susceptibility and penetration depth as a function of temperature exhibit universal scaling below T c in p and d waves.
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We discuss the thermal dependence of the zero-bias electrical conductance for a quantum dot embedded in a quantum wire, or side-coupled to it. In the Kondo regime, the temperature-dependent conductances map linearly onto the conductance for the symmetric Anderson Hamiltonian. The mapping fits accurately numerical renormalization-group results for the conductance in each geometry. In the side-coupled geometry, the conductance is markedly affected by a gate potential applied to the wire; in the embedded geometry, it is not. © 2010 IOP Publishing Ltd.