Fertile-free annular fuel for plutonium recycling

Up to 50% increase in the power density of the existing pressurized water reactor (PWR)-type reactors can be achieved by the use of internally and externally cooled annular fuel geometry. As a result, the accumulated stock-piles of Pu, especially if incorporated infertile-free inert matrix, can be burnt at a substantially higher rate as compared with the conventional mixed oxide-fueled reactors operating at standard power density. In this work, we explore the basic feasibility of a PWR core fully loaded with Pu incorporated infertile-free fuel of annular internally and externally cooled geometry and operating at 150% of nominal power density. We evaluate basic burnable poison designs, fuel management strategies, and reactivity feedback coefficients. The three-dimensional full core neutronic analysis performed with Studsvik Core Management System showed that the design of such a Pu-loaded annular fuel core is feasible but significantly more challenging than the Pu fertile-free core with solid fuel pins operating at nominal power density. The main difficulty arises from the fact that the annular fuel core requires at least 50% higher initial Pu loading in order to maintain the standard fuel cycle length of 18 months. Such a high Pu loading results in hardening of the neutron spectrum and consequent reduction in reactivity worth of all reactivity control mechanisms and, in some cases, positive moderator temperature coefficient (MTC). The use of isotopically enriched Gd and Er burnable poisons was found to be beneficial with respect to maximizing Pu burnup and reducing power peaking factors. Overall, the annular fertile-free Pu-loaded high-power-density core appears to be feasible, although it still has relatively high power peaking and potential for slightly positive MTC at beginning of cycle. However, we estimate that limiting the power density to 140% of the nominal case would assure acceptable core power peaking and negative MTC at all times during the cycle.

Fertile-free fuels in pressurized water reactors: Design challenges and solutions

This paper investigates the basic feasibility of using reactor-grade Pu in fertile-free fuel (FFF) matrix in pressurized water reactors (PWRs). Several important issues were investigated in this work: the Pu loading required to achieve a specific interrefueling interval, the impact of inert matrix composition on reactivity constrained length of cycle, and the potential of utilizing burnable poisons (BPs) to alleviate degradation of the reactivity control mechanism and temperature coefficients. Although the subject was addressed in the past, no systematic approach for assessment of BP utilization in FFF cores was published. In this work, we examine all commercially available BP materials in all geometrical arrangements currently used by the nuclear industry with regards to their potential to alleviate the problems associated with the use of FFF in PWRs. The recently proposed MgO-ZrO2 solid-state solution fuel matrix, which appears to be very promising in terms of thermal properties and radiation damage resistance, was used as a reference matrix material in this work. The neutronic impact of the relative amounts of MgO and ZrO2 in the matrix were also studied. The analysis was performed with a neutron transport and fuel assembly burnup code BOXER. A modified linear reactivity model was applied to the two-dimensional single fuel assembly results to approximate the full core characteristics. Based on the results of the performed analyses, the Pu-loaded FFF core demonstrated potential feasibility to be used in existing PWRs. Major FFF core design problems may be significantly mitigated through the correct choice of BP design. It was found that a combination of BP materials and geometries may be required to meet all FFF design goals. The use of enriched (in most effective isotope) BPs, such as 167Er and 157Gd, may further improve the BP effectiveness and reduce the fuel cycle length penalty associated with their use.

Optimization of burnable poison design for Pu incineration in fully fertile free PWR core

The design challenges of the fertile-free based fuel (FFF) can be addressed by careful and elaborate use of burnable poisons (BP). Practical fully FFF core design for PWR reactor has been reported in the past [1]. However, the burnable poison option used in the design resulted in significant end of cycle reactivity penalty due to incomplete BP depletion. Consequently, excessive Pu loading were required to maintain the target fuel cycle length, which in turn decreased the Pu burning efficiency. A systematic evaluation of commercially available BP materials in all configurations currently used in PWRs is the main objective of this work. The BP materials considered are Boron, Gd, Er, and Hf. The BP geometries were based on Wet Annular Burnable Absorber (WABA), Integral Fuel Burnable Absorber (IFBA), and Homogeneous poison/fuel mixtures. Several most promising combinations of BP designs were selected for the full core 3D simulation. All major core performance parameters for the analyzed cases are very close to those of a standard PWR with conventional UO2 fuel including possibility of reactivity control, power peaking factors, and cycle length. The MTC of all FFF cores was found at the full power conditions at all times and very close to that of the UO2 core. The Doppler coefficient of the FFF cores is also negative but somewhat lower in magnitude compared to UO2 core. The soluble boron worth of the FFF cores was calculated to be lower than that of the UO2 core by about a factor of two, which still allows the core reactivity control with acceptable soluble boron concentrations. The main conclusion of this work is that judicial application of burnable poisons for fertile free fuel has a potential to produce a core design with performance characteristics close to those of the reference PWR core with conventional UO2 fuel.

Free space communications with beam steering a two-electrode tapered laser diode using liquid-crystal slm

A free space optical wireless communication system with 3 degree angular coverage and 1.25 GHz modulation bandwidth is reported, in which relatively narrow laser beam of a simultaneous high power, high modulation speed and ultra high modulation efficiency directly modulated two-electrode tapered laser diode is steered using a nematic phase-only Liquid-Crystal On Silicon Spatial Light Modulator (LCOS SLM) by displaying reconfigurable 256 phase level gratings. © 1983-2012 IEEE.

A sustainable PWR fuel cycle with complete TRU recycling using fertile-free fuel

The feasibility of a conventional PWR fuel cycle with complete recycling of TRU elements in the same reactor is investigated. A new Combined Non-fertile and Uranium (CONFU) fuel assembly where about 20% of the uranium fuel pins are replaced with fertile free fuel (FFF) hosting TRU generated in the previous cycle is proposed. In this sustainable fuel cycle based on the CONFU fuel assembly concept, the amount and radiotoxicity of the nuclear waste can be significantly reduced in comparison with the conventional once-through UO 2 fuel cycle. It is shown that under the constraints of acceptable power peaking limits, the CONFU assembly exhibits negative reactivity feedback coefficients comparable in values to those of the reference UO2 fuel. Moreover, the effective delayed neutron fraction is about the same as for UO2-fueled cores. Therefore, feasibility of the PWR core operation and control with complete TRU recycle has been shown in principle. However, gradual build up of small amounts of Cm and Cf challenges fuel reprocessing and fabrication due to the high spontaneous fissions rates of these nuclides and heat generation by some Pu, Am, and Cm isotopes. Feasibility of the processing steps becomes more attainable if the time between discharge and reprocessing is 20 years or longer. The implications for the entire fuel cycle will have to be addressed in future studies.

Carrier lifetime and mobility enhancement in nearly defect-free core-shell nanowires measured using time-resolved terahertz spectroscopy.

We have used transient terahertz photoconductivity measurements to assess the efficacy of two-temperature growth and core-shell encapsulation techniques on the electronic properties of GaAs nanowires. We demonstrate that two-temperature growth of the GaAs core leads to an almost doubling in charge-carrier mobility and a tripling of carrier lifetime. In addition, overcoating the GaAs core with a larger-bandgap material is shown to reduce the density of surface traps by 82%, thereby enhancing the charge conductivity.

Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates

Vertically oriented GaAs nanowires (NWs) are grown on Si(111) substrates using metal-organic chemical vapor deposition. Controlled epitaxial growth along the 111 direction is demonstrated following the deposition of thin GaAs buffer layers and the elimination of structural defects, such as twin defects and stacking faults, is found for high growth rates. By systematically manipulating the AsH 3 (group-V) and TMGa (group-III) precursor flow rates, it is found that the TMGa flow rate has the most significant effect on the nanowire quality. After capping the minimal tapering and twin-free GaAs NWs with an AlGaAs shell, long exciton lifetimes (over 700ps) are obtained for high TMGa flow rate samples. It is observed that the Ga adatom concentration significantly affects the growth of GaAs NWs, with a high concentration and rapid growth leading to desirable characteristics for optoelectronic nanowire device applications including improved morphology, crystal structure and optical performance. © 2012 IOP Publishing Ltd.

Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process

We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of 111 segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-free nature of segments in our kinked germanium nanowires on silicon. As an application, nanobridges formed between (111) side walls of V-grooved (100) silicon substrates have been demonstrated. © 2012 IOP Publishing Ltd.

Taper-free and vertically oriented Ge nanowires on Ge/Si substrates grown by a two-temperature process

Taper-free and vertically oriented Ge nanowires were grown on Si (111) substrates by chemical vapor deposition with Au nanoparticle catalysts. To achieve vertical nanowire growth on the highly lattice mismatched Si substrate, a thin Ge buffer layer was first deposited, and to achieve taper-free nanowire growth, a two-temperature process was employed. The two-temperature process consisted of a brief initial base growth step at high temperature followed by prolonged growth at lower temperature. Taper-free and defect-free Ge nanowires grew successfully even at 270 °C, which is 90 °C lower than the bulk eutectic temperature. The yield of vertical and taper-free nanowires is over 90%, comparable to that of vertical but tapered nanowires grown by the conventional one-temperature process. This method is of practical importance and can be reliably used to develop novel nanowire-based devices on relatively cheap Si substrates. Additionally, we observed that the activation energy of Ge nanowire growth by the two-temperature process is dependent on Au nanoparticle size. The low activation energy (∼5 kcal/mol) for 30 and 50 nm diameter Au nanoparticles suggests that the decomposition of gaseous species on the catalytic Au surface is a rate-limiting step. A higher activation energy (∼14 kcal/mol) was determined for 100 nm diameter Au nanoparticles which suggests that larger Au nanoparticles are partially solidified and that growth kinetics become the rate-limiting step. © 2011 American Chemical Society.

Defect-free GaAs/AlGaAs Core-shell nanowires on Si substrates

We report straight and vertically aligned defect-free GaAs nanowires grown on Si(111) substrates by metal-organic chemical vapor deposition. By deposition of thin GaAs buffer layers on Si substrates, these nanowires could be grown on the buffer layers with much less stringent conditions as otherwise imposed by epitaxy of III-V compounds on Si. Also, crystal-defect-free GaAs nanowires were grown by using either a two-temperature growth mode consisting of a short initial nucleation step under higher temperature followed by subsequent growth under lower temperature or a rapid growth rate mode with high source flow rate. These two growth modes not only eliminated planar crystallographic defects but also significantly reduced tapering. Core-shell GaAs-AlGaAs nanowires grown by the two-temperature growth mode showed improved optical properties with strong photoluminescence and long carrier life times. © 2011 American Chemical Society.

Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process.

We demonstrate vertically aligned epitaxial GaAs nanowires of excellent crystallographic quality and optimal shape, grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. This is achieved by a two-temperature growth procedure, consisting of a brief initial high-temperature growth step followed by prolonged growth at a lower temperature. The initial high-temperature step is essential for obtaining straight, vertically aligned epitaxial nanowires on the (111)B GaAs substrate. The lower temperature employed for subsequent growth imparts superior nanowire morphology and crystallographic quality by minimizing radial growth and eliminating twinning defects. Photoluminescence measurements confirm the excellent optical quality of these two-temperature grown nanowires. Two mechanisms are proposed to explain the success of this two-temperature growth process, one involving Au nanoparticle-GaAs interface conditions and the other involving melting-solidification temperature hysteresis of the Au-Ga nanoparticle alloy.