CERIUM SILICIDE FORMATION IN THIN CE SI MULTILAYER FILMS

Alternating layers of Si(200 angstrom thick) and Ce(200 angstrom thick) up to 26 layers altogether were deposited by electron evaporation under ultrahigh vacuum conditions on Si(100) substrate held at 150-degrees-C. Isothermal, rapid thermal annealing has been used to react these Ce-Si multilayer films. A variety of analytical techniques has been used to study these multilayer films after annealing, and among these are Auger electron spectroscopy, Rutherford backscattering, X-ray diffraction, and high resolution transmission electron microscopy. Intermixing of these thin Ce-Si multilayer films has occurred at temperatures as low as 150-degrees-C for 2 h, when annealed. Increasing the annealing temperature from 150 to 400-degrees-C for 1 h, CeSi2 forms gradually and the completion of reaction occurs at approximately 300-400-degrees-C. During the formation of CeSi2 from 150-400-degrees-C, there is some evidence for small grains in the selected area diffraction patterns, indicating that CeSi2 crystallites were present in some regions. However, we have no conclusive evidence for the formation of epitaxial CeSi2 layers, only polycrystals were formed when reacted in the solid phase even after rapid thermal anneal at 900-degrees-C for 10 s. The formation mechanism has also been discussed in combining the results of the La-Si system.

Lithography-independent and large scale fabrication of a metal electrode nanogap

A lithography-independent and wafer scale method to fabricate a metal nanogap structure is demon-strated. Polysilicon was first dry etched using photoresist (PR) as the etch mask patterned by photolithography.Then, by depositing conformal SiO_2 on the polysilicon pattern, etching back SiO_2 anisotropically in the perpendic-ular direction and removing the polysilicon with KOH, a sacrificial SiO_2 spacer was obtained. Finally, after metal evaporation and lifting-off of the SiO_2 spacer, an 82 nm metal-gap structure was achieved. The size of the nanogap is not determined by the photolithography, but by the thickness of the SiO_2. The method reported in this paper is compatible with modern semiconductor technology and can be used in mass production.

Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon

Composites consisting of hydrogenated amorphous silicon (a-Si: H, inorganic) and zinc phthalocyanine (ZnPc, organic) were prepared by vacuum evaporation of ZnPc and sequential deposition amorphous silicon via plasma enhanced chemical vapor deposition (PECVD). The optical and electrical properties of the composite film have been investigated. The results demonstrate that ZnPc can endure the temperature and bombardment of the PECVD plasma and photoconductivity of the composite film was improved by 89.9% compared to pure a-Si: H film. Electron mobility-lifetime products μτ of the composite film were increased by nearly one order of magnitude from 6.96 × 10~(-7) to 5.08 × 10~(-6) cm~2/V. Combined with photoconductivity spectra of the composites and pure a-Si: H, we tentatively elucidate the improvement in photoconductivity of the composite film.

1.55μm Fabry-Perot Thermo-Optical Tunable Filter with amorphous-Si as Cavity

A 1.55μm Fabry-Perot (F-P) thermo-optical tunable filter is fabricated. The cavity is made of amorphous silicon (a-Si) layer grown by electron-beam evaporation technique. Due to the excellent thermo-optical property of a-Si, the refractive index of the F-P cavity will be changed by heating; the transmittance resonant peak will therefore shift substantially. The measured tuning range is 12nm, FWHM (full-width-at-half-maximum) of the transmission peak is 9nm, and heating efficiency is 0.1K/mW. The large FWHM is mainly due to the non-ideal coating deposition and mirror undulation. Possible improvements to increase the efficiency of heating are suggested.

Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition

Polymorphous Si nanowires (SiNWS) have been successfully synthesized on Si wafer by plasma enhanced chemical vapor deposition (PECVD) at 440degreesC,using silane as the Si source and Au as the catalyst. To grow the polymorphous SiNWS preannealing the Si substrate with Au film at 1100 degreesC is needed. The diameters of Si nanowires range from 15 to 100 urn. The structure morphology and chemical composition of the SiNWS have been characterized by high resolution x-ray diffraction, scanning electron microscopy, transmission electron microscopy, as well as energy dispersive x-ray spectroscopy. A few interesting nanowires with Au nanoclusters uniformly distributed in the body of the wire were also produced by this technique.

Analysis of equilateral triangle semiconductor microlasers with rough sidewalls

The mode frequencies and quality factors are calculated for the equilateral triangle semiconductor microlasers with sinusoidal and random Gaussian sidewalls. The results show that the modes can still have high Q-factors.

Ti Schottky barrier diodes on n-type 6H-SiC

Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes (SBD) were fabricated. They showed good rectification characteristics from room temperature to 200degreesC. At low current density. the current conduction mechanism follows the thermionic emission theory. These diodes demonstrated a low reverse leakage current of below 1 X 10(-4)Acm(-2). Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800V. In addition. these SBDs showed superior switching characteristics.

A semiconductor laser suitably fabricated by planar technology

The semiconductor microlasers with an equilateral triangle resonator which can be fabricated by dry etching technique from the laser wafer of the edge emitting laser, are analyzed by FDTD technique and rate equations. The results show that ETR microlaser is suitable to realize single mode operation. By connecting an output waveguide to one of the vertices of the ETR, we still can get the confined modes with high quality factors. The EM microlasers are potential light sources for photonic integrated circuits.

Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors

A novel silicon-on-reflector substrate for Si-based resonant-cavity-enhanced photodetectors has been fabricated by using Si-based sol-gel and smart-cut techniques. The Si/SiO2 Bragg reflector is controlled in situ by electron beam evaporation and the thickness can be adjusted to get high reflectivity. The reflectance spectra of the silicon-on-reflector substrate with five pairs of Si/SiO2 reflector have been measured and simulated by transfer matrix model. The reflectivity at operating wavelength is close to 100%. Based on the silicon-on-reflector substrate, SiGe/Si multiple quantum wells resonant-cavity-enhanced photodetectors for 1.3 mu m wavelength have been designed and simulated. Ten-fold enhancement of the quantum efficiency of resonant-cavity-enhanced photodetectors compared with conventional photodetectors is predicted.

Studies of 6H-SiC devices

Silicon carbide (SiC) is recently receiving increased attention due to its unique electrical and thermal properties. It has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. The fabrication processes and characterization of basic device on 6H-SiC were systematically studied. The main works are summarized as follows:The homoepitaxial growth on the commercially available single-crystal 6H-SiC wafers was performed in a modified gas source molecular beam epitaxy system. The mesa structured p(+)n junction diodes on the material were fabricated and characterized. The diodes showed a high breakdown voltage of 800 V at room temperature. They operated with good rectification characteristics from room temperature to 673 K.Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes were fabricated. They showed good rectification characteristics from room temperature to 473 K. Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 V.n-Type 6H-SiC MOS capacitors were fabricated and characterized. Under the same growing conditions, the quality of polysilicon gate capacitors was better than Al. In addition, SiC MOS capacitors had good tolerance to gamma rays. (C) 2002 Published by Elsevier Science B.V.

长白山地区近50年气候变化及其预估

收集长白山地区15个气象站1953-2007年气温、降水、蒸发、日照时数和水汽压观测数据和国家气候中心整理的2001-2099年的 气温、降水预估资料，利用数理统计方法，系统分析长白山地区气候现状、变化及其预估，为气候变化对人类生存环境影响研究并制定适应对策提供依据。主要结论如下： 1.长白山地区气温、降水日数、日照时数和不同界限温度（≥0℃、≥5℃、≥10℃和<0℃）积温均有显著趋势。年极端最低、年平均、平均最高/最低气温和气温日/年较差在1984、1992、1995、1985、1972和1979年发生突变。所有最高/最低气温与日照百分率有显著负相关关系，一定程度是温室效应结果；最高、最低气温变化不同步造成气温日较差和年较差的非对称性。 2.长白山地区生长季节合计降水量和降水强度日际变化较大。降水以7月30日为界，呈现前升后降极显著的线性趋势，且发生均值突变。降水强度以6月27日和9月3日为分界点，分为三个阶段。降水集中度、集中期和集中时段时空非均一性分布明显。 3.在SRES A1B、SRES A2和SRES B1三种情景下年平均气温均为上升趋势，年内变化一致为冬季升温最迅速，夏季则相对缓慢；而年降水强度总体增加，年内变化比较一致：冬季增加最为明显，而夏季变化不大。 4.未来长白山地区各站≥0℃、≥5℃和≥10℃的积温均有不同程度增加，持续时间延长。负积温增加，持续时间缩短，开始日期推迟，而结束时间提前。

电子束蒸发制备YBCO超导薄膜研究

采用电子束沉积制备YBCO超导薄膜,研究了760℃-840℃的不同退火温度下高温热处理对YBCO薄膜双轴织构,表面形貌及超导性能的影响.超导临界电流密度测试,X射线衍射(XRD)和扫描电镜(SEM)的结果表明,退火温度在在800℃时,YBCO薄膜具有良好的织构和平整致密的表面形貌,在77K自场下的临界电流密度J可达4.2×106/cm2

Fracture of colloidal single-crystal films fabricated by controlled vertical drying deposition

Controlled vertical drying deposition method was used to make high-quality single crystal close-packed colloidal films formed of different radii polystyrene latex spheres on glass substrates coming from a low concentration water suspension (0.1% volume fraction). Regardless of the spheres radii the film thickness was about 6.3 microns. However, cracks destroyed the crystalline film structure during the colloidal film growth. The effect of particle radius (85-215 nm range) on film cracking was systematically studied using in situ optical fracture monitoring. Primary parallel cracks run along the vertical growth direction, later followed by secondary branched cracks in-between the primary cracks due to residual water evaporation. Quantitative theoretical relationship between the cracks spacing and particles radius was derived and shows good agreement with experimental observations. Normalized cracks spacing is related to a reciprocal ratio of the dimensionless particle radius.

Experimental Investigation of Pendant and Sessile Drops in Microgravity

The experiments regarding the contact angle behavior of pendant and sessile evaporating drops were carried out in microgravity environment. All the experiments were performed in the Drop Tower of Beijing, which could supply about 3.6 s of microgravity (free-fall) time. In the experiments, firstly, drops were injected to create before microgravity. The wettability at different surfaces, contact angles dependance on the surface temperature, contact angle variety in sessile and pendant drops were measured. Different influence of the surface temperature on the contact angle of the drops were found for different substrates. To verify the feasibility of drops creation in microgravity and obtain effective techniques for the forthcoming satellite experiments, we tried to inject liquid to create bigger drop as soon as the drop entering microgravity condition. The contact angle behaviors during injection in microgravity were also obtained.

蒸发相变与界面流动耦合机理研究

本文提出了一种新模型来研究液层在其纯蒸气中的蒸发热动力学特征,尤其是当蒸发界面张力驱动流占主导作用时(如微重力环境中)液层热毛细对流和界面蒸发始终耦合在一起. 气一液界面的传热传质规律有待深入研究. 本文数值模拟研究了蒸发相变界面热毛细对流与蒸发效应的耦合机质,得到了不同蒸发模式和不同强度热毛细对流蒸发液层的温度分布、蒸发速率以及对流流场分布的数值解. 论述了蒸发Biot数和Marangoni数对界面传热传质的影响,发现并解释了蒸发和热毛细耦合的三种模式