Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions.

We present an analysis of factors influencing carrier transport and electroluminescence (EL) at 1.5 µm from erbium-doped silicon-rich silica (SiOx) layers. The effects of both the active layer thickness and the Si excess content on the electrical excitation of erbium are studied. We demonstrate that when the thickness is decreased from a few hundred to tens of nanometers the conductivity is greatly enhanced. Carrier transport is well described in all cases by a Poole-Frenkel mechanism, while the thickness-dependent current density suggests an evolution of both density and distribution of trapping states induced by Si nanoinclusions. We ascribe this observation to stress-induced effects prevailing in thin films, which inhibit the agglomeration of Si atoms, resulting in a high density of sub-nm Si inclusions that induce traps much shallower than those generated by Si nanoclusters (Si-ncs) formed in thicker films. There is no direct correlation between high conductivity and optimized EL intensity at 1.5 µm. Our results suggest that the main excitation mechanism governing the EL signal is impact excitation, which gradually becomes more efficient as film thickness increases, thanks to the increased segregation of Si-ncs, which in turn allows more efficient injection of hot electrons into the oxide matrix. Optimization of the EL signal is thus found to be a compromise between conductivity and both number and degree of segregation of Si-ncs, all of which are governed by a combination of excess Si content and sample thickness. This material study has strong implications for many electrically driven devices using Si-ncs or Si-excess mediated EL.

DISPOSITIVOS DGT MODIFICADOS COM MATERIAIS ALTERNATIVOS PARA USO NA ESPECIAÇÃO DE ELEMENTOS TRAÇO

The use of MT-K10 Montmorillonite immobilized onto agarose was investigated in this work as an alternative binding phase in Diffusive Gradient in Thin Film (DGT) devices for the determination of metallic labile species. In addition, agarose itself was also used as the diffusive phase. The percentage of sorption of Zn2+, Cu2+, Cr3+, Mn2+, Cd2+, Pb2+, and Ni2+ onto the binding phase was higher than 80% and the desorption process for all elements was also greater than 75%. Elution factors were determined experimentally, ranging from 0.74 for Zn2+ and 0.90 for Cr3+ and Pb2+. The accumulation of all species was linear with time, in agreement with the Fick's 1st law of diffusion. The deployment of the alternative devices in natural waters was compared to commercial devices. Labile concentrations determined by the alternative devices were slightly superior compared to results obtained with the deployment of original DGT devices due to the less restrictive pores of agarose.

La1-xSrxMnO3 as a candidate for a room temperature pressure sensor /

Perovskite manganite compounds, Lai-xDxMnOs (D-divalent alkaline earth Ca, Sr or Ba), whose electrical and magnetic properties were first investigated nearly a half century ago, have attracted a great deal of attention due to their rich phase diagram. From the point of view of designing a future application, the strong pressure dependence of the resistivity and the accompanying effects in thin films have potential for application in pressure sensing and electronic devices. In this study we report our experimental investigations of pressure dependence of the resistivity of Lao.siSvo^iQMnOs and Lai-xSvxMnOs (LSMO) epitaxial films with x= 0.15, 0.20, 0.25, 0.30, 0.35, on SrTiOs substrates.

Studies on Electrical and Thermal Properties of Certain Selected Photonic Materials

The present thesis is centered around the study of electrical and thermal properties of certain selected photonic materials.We have studied the electrical conduction mechanism in various phases of certain selected photonic materials and those associated with different phase transitions occurring in them. A phase transition leaves its own impressions on the key parameters like electrical conductivity and dielectric constant. However, the activation energy calculation reveals the dominant factor responsible for conduction process.PA measurements of thermal diffusivity in certain other important photonic materials are included in the remaining part of the research work presented in this thesis. PA technique is a promising tool for studying thermal diffusivities of solid samples in any form. Because of its crucial role and common occurrence in heat flow problems, the thermal diffusivity determination is often necessary and knowledge of thermal diffusivity can intum be used to calculate the thermal conductivity. Especially,knowledge of the thermal diffusivity of semiconductors is important due to its relation to the power dissipation problem in microelectronic and optoelectronic devices which limits their performances. More than that, the thermal properties, especially those of thin films are of growing interest in microelectronics and microsystems because of the heat removal problem involved in highly integrated devices. The prescribed chapter of the present theis demonstrates how direct measurement of thermal diffusivity can be carried out in thin films of interest in a simple and elegant manner using PA techniques. Although results of only representative measurements viz; thermal diffusivity values in Indium, Aluminium, Silver and CdS thin films are given here, evaluation of this quantity for any photonic and / electronic material can be carried out using this technique in a very simple and straight forward manner.

Lead free heterogeneous multilayers with giant magneto electric coupling for microelectronics/microelectromechanical systems applications

Lead free magneto electrics with a strong sub resonant (broad frequency range) magneto electric coupling coefficient (MECC) is the goal of the day which can revolutionise the microelectronics and microelectromechanical systems (MEMS) industry. We report giant resonant MECC in lead free nanograined Barium Titanate–CoFe (Alloy)-Barium Titanate [BTO-CoFe-BTO] sandwiched thin films. The resonant MECC values obtained here are the highest values recorded in thin films/ multilayers. Sub-resonant MECC values are quite comparable to the highest MECC reported in 2-2 layered structures. MECC got enhanced by two orders at a low frequency resonance. The results show the potential of these thin films for transducer, magnetic field assisted energy harvesters, switching devices, and storage applications. Some possible device integration techniques are also discussed

Organic field-effect transistors and phototransistors based on amorphous materials

A comparison between the charge transport properties in low molecular amorphous thin films of spiro-linked compound and their corresponding parent compound has been demonstrated. The field-effect transistor method is used for extracting physical parameters such as field-effect mobility of charge carriers, ON/OFF ratios, and stability. In addition, phototransistors have been fabricated and demonstrated for the first time by using organic materials. In this case, asymmetrically spiro-linked compounds are used as active materials. The active materials used in this study can be divided into three classes, namely Spiro-linked compounds (symmetrically spiro-linked compounds), the corresponding parent-compounds, and photosensitive spiro-linked compounds (asymmetrically spiro-linked com-pounds). Some of symmetrically spiro-linked compounds used in this study were 2,2',7,7'-Tetrakis-(di-phenylamino)-9,9'-spirobifluorene (Spiro-TAD),2,2',7,7'-Tetrakis-(N,N'-di-p-methylphenylamino)-9,9'-spirobifluorene (Spiro-TTB), 2,2',7,7'-Tetra-(m-tolyl-phenylamino)-9,9'-spirobifluorene (Spiro-TPD), and 2,2Ž,7,7Ž-Tetra-(N-phenyl-1-naphtylamine)-9,9Ž-spirobifluorene (Spiro alpha-NPB). Related parent compounds of the symmetrically spiro-linked compound used in this study were N,N,N',N'-Tetraphenylbenzidine (TAD), N,N,N',N'-Tetrakis(4-methylphenyl)benzidine (TTB), N,N'-Bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), and N,N'-Diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (alpha-NPB). The photosensitive asymmetrically spiro-linked compounds used in this study were 2,7-bis-(N,N'-diphenylamino)-2',7'-bis(biphenyl-4-yl)-9,9'-spirobifluorene (Spiro-DPSP), and 2,7-bis-(N,N'-diphenylamino)-2',7'-bis(spirobifluorene-2-yl)-9,9'-spirobifluorene (Spiro-DPSP^2). It was found that the field-effect mobilities of charge carriers in thin films of symmetrically spiro-linked compounds and their corresponding parent compounds are in the same order of magnitude (~10^-5 cm^2/Vs). However, the thin films of the parent compounds were easily crystallized after the samples have been exposed in ambient atmosphere and at room temperature for three days. In contrast, the thin films and the transistor characteristics of symmetrically spiro-linked compound did not change significantly after the samples have been stored in ambient atmosphere and at room temperature for several months. Furthermore, temperature dependence of the mobility was analyzed in two models, namely the Arrhenius model and the Gaussian Disorder model. The Arrhenius model tends to give a high value of the prefactor mobility. However, it is difficult to distinguish whether the temperature behaviors of the material under consideration follows the Arrhenius model or the Gaussian Disorder model due to the narrow accessible range of the temperatures. For the first time, phototransistors have been fabricated and demonstrated by using organic materials. In this case, asymmetrically spiro-linked compounds are used as active materials. Intramolecular charge transfer between a bis(diphenylamino)biphenyl unit and a sexiphenyl unit leads to an increase in charge carrier density, providing the amplification effect. The operational responsivity of better than 1 A/W can be obtained for ultraviolet light at 370 nm, making the device interesting for sensor applications. This result offers a new potential application of organic thin film phototransistors as low-light level and low-cost visible blind ultraviolet photodetectors.

Fases magnéticas de sistemas nanoestruturados de terras-raras

There is presently a worldwide interest in artificial magnetic systems which guide research activities in universities and companies. Thin films and multilayers have a central role, revealing new magnetic phases which often lead to breakthroughs and new technology standards, never thought otherwise. Surface and confinement effects cause large impact in the magnetic phases of magnetic materials with bulk spatially periodic patterns. New magnetic phases are expected to form in thin film thicknesses comparable to the length of the intrinsic bulk magnetic unit cell. Helimagnetic materials are prototypes in this respect, since the bulk magnetic phases consist in periodic patterns with the length of the helical pitch. In this thesis we study the magnetic phases of thin rare-earth films, with surfaces oriented along the (002) direction. The thesis includes the investigation of the magnetic phases of thin Dy and Ho films, as well as the thermal hysteresis cycles of Dy thin films. The investigation of the thermal hysteresis cycles of thin Dy films has been done in collaboration with the Laboratory of Magnetic Materials of the University of Texas, at Arlington. The theoretical modeling is based on a self-consistent theory developed by the Group of Magnetism of UFRN. Contributions from the first and second neighbors exchange energy, from the anisotropy energy and the Zeeman energy are calculated in a set of nonequivalent magnetic ions, and the equilibrium magnetic phases, from the Curie temperature up to the Nèel temperature, are determined in a self-consistent manner, resulting in a vanishing torque in the magnetic ions at all planes across the thin film. Our results reproduce the known isothermal and iso-field curves of bulk Dy and Ho, and the known spin-slip phases of Ho, and indicate that: (i) the confinement in thin films leads to a new magnetic phase, with alternate helicity, which leads to the measured thermal hysteresis of Dy ultrathin films, with thicknesses ranging from 4 nm to 16 nm; (ii) thin Dy films have anisotropy dominated surface lock-in phases, with alignment of surface spins along the anisotropy easy axis directions, similar to the known spin-slip phases of Ho ( which form in the bulk and are commensurate to the crystal lattice); and (iii) the confinement in thin films change considerably the spin-slip patterns of Ho.

Characterization of an all sol-gel electrochromic device WO3/Ormolyte/CeO2-TiO2

Electrochemical lithium intercalation in thin films of CeO2-TiO2 and WO3, prepared by the sol-gel technique was investigated with cyclic voltammetry and spectroelectrochemical techniques in propylene carbonate solutions. A solid state system having the configuration WO3/Ormolyte/CeO2-TiO2 has been assembled. The solid electrolyte, an organically modified electrolyte (ormolyte), was prepared with different [O]/[Li] ratios. The transmittance variation of this system during a potentiostatic step from -0.7 V to 0.8 V was about 35% at 550 nm.

Non-Linear Dielectric Properties of PLMN-PT Relaxor Ferroelectrics

Recent investigations on the non-linear (NL) dielectric properties of relaxor ferroelectrics systems, not only as ceramic bodies, but also, in thin films, have showed a significant technological and scientific interest. The most common practical applications of relaxors include multilayer capacitors and actuators. In this work, non-linear dielectric properties of hot-pressed (1-x)[Pb1 -(3/2) yLayMg1/3Nb2/3O3]-xPbTiO3 (PLMN-PT) ferroelectric ceramics were investigated. The NL properties were obtained by using the measurements of the dielectric permittivity of the material as a function of the AC electric field with variable amplitude in the frequency and temperature range of 100 Hz-1 MHz and 50-450 K, respectively. An anomalous behavior of the non-linear dielectric response was observed when submitted to high electric fields levels. The obtained results were analyzed concerning one of the models for the dielectric response of relaxors ferroelectrics materials currently discussed in the literature.

Síntese de filmes finos do sistema PMN-PT pelo método dos precursores óxidos

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Efeito da pressão na obtenção e nas propriedades óticas e sensoras de filmes finos à base de 'SN''O IND. 2' com a adição de 'ZNO'

Pós-graduação em Química - IQ

Determinação de manganêsem águas no entorno de minerações de urânio

The studies of this work aimed to determine the labile fractions of manganese (Mn) in natural and drainage water samples collected around the Osamu Utsumi uranium mine, located in the municipality of Caldas, south-central region of Poços de Caldas- MG, using the technique of diffusion gradient in thin films (DGT). The DGT devices were mounted with Chelex-100 resin, polyacrylamide-agarose hydrogel (conventional porosity) and cellulose acetate membrane. The device were deployed up to 48 hours in six water samples collected from different areas around the uranium mine (075, 076, 022-E, 025-E, 014, and 041). The DGT devices immersed in each sample were gradually removed after 4, 8, 12, 24 and 48 hours. The pH of the samples ranged from 3.0 to 10.5, which influenced the lability and the sampling of the analyte by the Chelex-100 resin. The results showed a linear relationship between accumulated mass and sampling time (immersion curve) for samples 014 and 025-E (pH between 6 and 8) suggesting the ability of the DGT technique for sampling the analyte. The results obtained for samples 075 and 076 (pH<5) and samples 041 and 022-E (pH around 10) were characterized by nonlinear relationships. The values obtained by DGT were compared with Solid Phase Extraction (SPE) technique using Chelex-100. For samples 014 and 025-E, there was a good agreement between the results obtained by both techniques

Desenvolvimento de filmes finos de Bi3NbO7 pelo método dos precursores poliméricos em diferentes eletrodos óxidos

Technology always advances and thus the device miniaturization and improved performance, besides multifunctionality, they become extremely necessary. A wave of research on the area tends to grow in number and importance in today's market, it is necessary to search for new materials, new applicability of the existing ones and new processes for increasingly cheaper costs. Dielectric materials are considered a key element in this sector being the main electrical properties its high dielectric constant and low dielectric loss. The Polymeric Precursor Method appears as a good alternative because is a low cost, simple process with controlled stoichiometry. In this method, two steps were performed. In a first step, the precursor solution was decomposed into powders and in a second step the precursor solution was converted in thin films. In this work, was used the polymeric precursor methods to get thin films where they were heat treated and characterized by XRD, SEM and AFM. We have obtained Bi3NbO7 thin films with good homogeneity and uniform distribution of grains were noted. We observed that the best condition to obtain the tetragonal phase is annealing the film at high temperatures for a longer soaking time and with excess of bismuth. Several oxides electrodes were evaluated aiming to obtain textured dielectric thin films

Continuous/Cluster-Pinned Recording Media

We propose and theoretically investigate a new class of nanostructured magnetic recording films, cluster-pinned recording media. The films consist of magnetic clusters exchange coupled to a continuous hard layer with perpendicular anisotropy and low coercivity. Our calculations yield the coercivity and the cross-track correlation length as a function of film thickness and pinning density and strength. The mechanism is very similar to the Gaunt–Friedel pinning in bulk magnets, which differs from ordinary strong pinning by the selfconsistent dependence of wall curvature and coercivity on defect concentration. The main difference is the exponent for the coercivity as a function of the pinning strength, which is equal to 2 in the bulk but equal to 3/2 in thin films. The pinning strength is estimated for various regimes, and it is shown that the diminished domain-wall curvature reduces jitter.

Influence of Molecular Dynamics on the Dielectric Properties of Poly(9,9-di-n-octylfluorene-alt-benzothiadiazole) -Based Devices

This paper uses Nuclear Magnetic Resonance (NMR) and Differential Scanning Calorimetry (DSC) techniques to study the molecular relaxations and phase transitions in poly(9,9-di-n-octylfluorene-alt-benzothiadiazole) (F8BT), which has been extensively studied as the active thin film in organic devices. Besides the identification of the glass transition, beta relaxation and crystal-to-crystal phase transition, we correlate such phenomena with dielectric and transport mechanisms in diodes with F8BT as the active layer. The beta relaxation has been assigned to a transition at about 210 K measured by H-1 and C-13 solid state NMR, and can be attributed to local motions in the side chains. The glass transition has been detected by DSC and H-1 NMR. Dielectric spectroscopy (DS) carried out at low frequencies on diodes made from F8BT show two peaks which are coincident with the above transitions. This allowed us to correlate the electrical changes in the film with the onset of specific molecular motions. In addition, DS indicates a third peak related with a crystal-to-crystal phase transition. Finally, these transitions were correlated with changes in the carrier mobility recorded in thin films and published recently.