Morphological characteristics of amorphous Ge2Sb2Te5 films after a single femtosecond laser pulse irradiation

The morphology of materials resulting from laser irradiation of the single-layer and the multilayer amorphous Ge2Sb2Te5 films using 120 fs pulses at 800 nm was observed using scanning electron microscopy and atomic force microscopy. For the single-layer film, the center of the irradiated spot is depression and the border is protrusion, however, for the multilayer film, the center morphology changes from a depression to a protrusion as the increase of the energy. The crystallization threshold fluence of the single-layer and the multilayer film is 22 and 23 mJ/cm(2), respectively. (c) 2005 Elsevier B.V. All rights reserved.

Photoinduced effects in amorphous Ge-Se films

With light illumination from an Ar ion laser, the photoinduced changes in vacuum evaporated amorphous GeSe2 films; were investigated with the X-ray diffraction (XRD), infrared absorption (IR), scanning electron microscope (SEM), transmitting electron microscope (TEM) and transmittance spectra analysis. It was observed that the optical transmittance edges of films shifted to shorter wavelength according to annealing and light illumination and the shift in well-annealed films could be recovered by annealing at 200 degrees C for 1 h in Ar air. The magnitude of shift increased with the increase of the intensity of illumination light and the illumination time. By sides, photoinduced crystallization was also observed in the exposed regions of GeSe2 films and more of it was observed with stronger intensity of illumination light.

SbOx thin films used for write-once blue laser recording

SbOx thin films are deposited by reactive dc-magnetron sputtering from all antimony metal target in Ar+O-2 with the relative O-2 content 7%. It is found that the as-deposited films call represent a two-component system comprising amorphous Sb and amorphous Sb2O3. The crystallization of Sb is responsible for the changes of optical properties of the films. The results of the static, test show that the SbOx thin films have good writing sensitivity for blue laser beams and the recording marks are very clear and circular. High reflectivity contrast of about 41% is obtained at a writing power 6 mW and writing pulse width 300 ns. In addition, the films show a good stability after reading 10000 times.

Observation of ultrafast carrier dynamics in amorphous Ge2Sb2Te5 films induced by femtosecond laser pulses

The femtosecond pump-probe technique was used to study the carrier dynamics of amorphous Ge2Sb2Te5 films. With carrier density at around 10(20)-10(21) cm(-3), carriers were excited within 1 ps and recovered to the initial state for less than 3 ns. On the picosecond time scale, the carrier relaxation consists of two components: a fast process within 5 ps and a slow process after 5 ps. The relaxation time of the fast component is a function of carrier density, which increases from 1.9 to 4.3 ps for the carrier density changing from 9.7x10(20) cm(-3) to 3.1x10(21) cm(-3). A possible interpretation of the relaxation processes is elucidated. In the first 5 ps the relaxation process is dominated by an intraband carrier relaxation and the carrier trapping. It is followed by a recombination process of trapped carriers at later delay time. (c) 2007 American Institute of Physics.

Write-once blue laser recording using silicon doped SbOx thin films prepared by reactive dc-magnetron sputtering

Si:SbOx films have been deposited by reactive dc-magnetron sputtering from a Sb target with Si chips attached in Ar + O-2 with the relative O-2 content 7%. The as-deposited films contained Sb metal, Sb2O3, SiO, Si2O3 and SiO2. The crystallization of Sb was responsible for the changes of optical properties of the films. The results of the blue laser recording test showed that the films had good writing sensitivity for blue laser beam (406.7 nm), and the recording marks were still clear even if the films were deposited in air 60 days, which demonstrated that doping silicon in SbOx films can improve the stability of SbOx films. High reflectivity contrast of about 36% was obtained at a writing power 6 mW and writing pulse width 300 ns. (c) 2007 Elsevier B.V. All rights reserved.

Coordination and crystallisation molecules: Their interactions affecting the dimensionality of metalloporphyrinic SCFs

Synthetic metalloporphyrin complexes are often used as analogues of natural systems, and they can be used for the preparation of new Solid Coordination Frameworks (SCFs). In this work, a series of six metalloporphyrinic compounds constructed from different meso substituted metalloporphyrins (phenyl, carboxyphenyl and sulfonatophenyl) have been structurally characterized by means of single crystal X-ray diffraction, IR spectroscopy and elemental analysis. The compounds were classified considering the dimensionality of the crystal array, referred just to coordination bonds, into 0D, 1D and 2D compounds. This way, the structural features and relationships of those crystal structures were analyzed, in order to extract conclusions not only about the dimensionality of the networks but also about possible applications of the as-obtained compounds, focusing the interest on the interactions of coordination and crystallization molecules. These interactions provide the coordination bonds and the cohesion forces which produce SCFs with different dimensionalities.

Structure and properties of amorphous thin film for optical data storage

In this paper the magnetic and magneto-optical properties of amorphous rare earth-transition metal (RE-TM) alloys as well as the magnetic coupling in the multi-layer thin films for high density optical data storage are presented. Using magnetic effect in scanning tunneling microscopy the clusters structure of amorphous RE-TM thin films has been observed and the perpendicular magnetic anisotropy in amorphous RE-TM thin films has been interpreted. Experimental results of quick phase transformation under short pulse laser irradiation of amorphous semiconductor and metallic alloy thin films for phase change optical recording are reported. A step-by-step phase transformation process through metastable states has been observed. The waveform of crystallization propagation in micro-size spot during laser recording in amorphous semiconductor thin films is characterized and quick recording and erasing mechanism for optical data storage with high performance are discussed. The nonlinear optical effects in amorphous alloy thin films have been studied. By photo-thermal effect or third order optical nonlinearity, the optical self-focusing is observed in amorphous mask thin films. The application of amorphous thin films with super-resolution near field structure for high-density optical data storage is performed. (c) 2007 Elsevier B.V. All rights reserved.

Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

Sheet resistance of laser-irradiated Ge2Sb2Te5 thin films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance undergoes an abrupt drop from 10(7) to 10(3) Omega/square at about 580 mW. The abrupt drop in resistance is due to the structural change from amorphous to crystalline state as revealed by X-ray diffraction (XRD) study of the samples around the abrupt change point. Crystallized dots were also formed in the amorphous Ge2Sb2Te5 films by focused short pulse laser-irradiated, the resistivities at the crystallized dots and the non-crystallized area are 3.375 x 10(-3) and 2.725 Omega m, sheet resistance is 3.37 x 10(4) and 2.725 x 10(7) Omega/square respectively, deduced from the I-V Curves that is obtained by conductive atomic force microscope (C-AFM). (C) 2008 Elsevier B.V. All rights reserved.

Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials

The dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials in crystalline and amorphous states on temperature was measured and analyzed. The results show that in the crystalline state, the thermal properties monotonically decrease with the temperature and present obvious crystalline semiconductor characteristics. The heat capacity, thermal diffusivity, and thermal conductivity decrease from 0.35 J/g K, 1.85 mm(2)/s, and 4.0 W/m K at 300 K to 0.025 J/g K, 1.475 mm(2)/s, and 0.25 W/m K at 600 K, respectively. In the amorphous state, while the dependence of thermal properties on temperature does not present significant changes, the materials retain the glass-like thermal characteristics. Within the temperature range from 320 K to 440 K, the heat capacity fluctuates between 0.27 J/g K and 0.075 J/g K, the thermal diffusivity basically maintains at 0.525 mm(2)/s, and the thermal conductivity decreases from 1.02 W/m K at 320 K to 0.2 W/m K at 440 K. Whether in the crystalline or amorphous state, Ag8In14Sb55Te23 are more thermally active than Ge2Sb2Te5, that is, the Ag8In14Sb55Te23 composites bear stronger thermal conduction and diffusion than the Ge2Sb2Te5 phase-change memory materials.

Improved Mechanical Properties of Compatibilized Polypropylene/Polyamide-12 Blends

Compatibilized blends of polypropylene (PP) and polyamide-12 (PA12) as a second component were obtained by direct injection molding having first added 20% maleic anhydride-modified copolymer (PP-g-MA) to the PP, which produced partially grafted PP (gPP). A nucleating effect of the PA12 took place on the cooling crystallization of the gPP, and a second crystallization peak of the gPP appeared in the PA12-rich blends, indicating changes in the crystalline morphology. There was a slight drop in the PA12 crystallinity of the compatible blends, whereas the crystallinity of the gPP increased significantly in the PA12-rich blends. The overall reduction in the dispersed phase particle size together with the clear increase in ductility when gPP was used instead of PP proved that compatibilization occurred. Young's modulus of the blends showed synergistic behavior. This is proposed to be both due to a change in the crystalline morphology of the blends on the one hand and, on the other, in the PA12-rich blends, to the clear increase in the crystallinity of the gPP phase, which may, in turn, have been responsible for the increase in its continuity and its contribution to the modulus.

脉冲激光晶化非晶硅薄膜的有限差分模拟

根据热传导原理，建立了脉冲激光晶化非晶硅薄膜的理论模型。运用有限差分方法研究了不同激光波长、能量密度等因素对薄膜温度变化及相变过程的影响。计算了不同波长激光器对厚度500nm非晶硅晶化的阈值能量密度。结果发现，准分子晶化的阈值能量密度最低，但是在同样的能量密度下，熔融深度却不及使用更长波长的激光器。计算并分析了升高衬底温度对结晶速度和晶粒尺寸的影响，模拟结果较好地验证了实验结论和规律。

含AlF3和ZrF4氟化物玻璃的分相与析晶

以摩尔组成为8．7MgF2-17．4CaF2-8．7SrF2-13．3BaF2-13．0YF3-31．6．AlF3-7．3ZrF4的氟化物玻璃为对象，研究了玻璃的分相和析晶．研究表明，玻璃中同时含有AlF3和ZrF4时，玻璃产生明显的分相，玻璃在高温下对水比较敏感，容易产生表面析晶．玻璃内部的析晶主要来自稳定性较差的富Al相，受空气中水分的影响，玻璃表面的析晶首先产生于富Zr相．依据玻璃的分相和析晶表现，讨论了含AlF3和ZrF4氟化物玻璃的表面析晶机理．

TeO2对氟铝酸盐玻璃性质和结构的影响

以10MgF2—20CaF2—10SrF2—10BaF2—15YF3—35AlF3氟铝酸盐玻璃为基玻璃引入不同含量的TeO2得到了新的氟碲铝酸盐玻璃．用差热分析方法研究了TeO2对氟铝酸盐玻璃性能的影响，通过拉曼光谱和红外吸收谱来研究玻璃的结构变化．差热分析表明TeO2的增加使玻璃开始析晶温度瓦升高，融化温度％降低，成玻璃能力增加．玻璃结构分析表明氟碲铝酸盐玻璃的结构中存在[FnAl-O—AlFn]、[TeO3]、[TeO2F]和[TeOF2]等多面体，这些多面体由F^-和O^2-离子连接．这种新的氟碲铝

掺铒碲酸盐玻璃的热力学稳定性和光谱性质的研究

分析了掺Er^3+碲酸盐玻璃的热力学稳定性能，研究了掺Er^3+碲酸盐玻璃的吸收和荧光光谱性质；应用Judd-Ofelt理论计算了碲酸盐玻璃中Er^3+离子的强度参数Ω(Ω2=4．79×10^-20cm^2,Ω4=1．52×10^-20cm^2，Ω6=0．66×10^-20cm^2)，计算了离子的自发跃迁几率，荧光分支比；应用McCumber理论计算了Er^3+的受激发射截面(σe=10．40×10^-21cm^2)、Er^3+离子^4I13／2→^4I15／2发射谱的荧光半高宽(FWHM=65．5nm)

掺铒碲钨酸盐玻璃及其平面波导

研制了一种用于宽带波导放大器的掺铒碲钨酸盐激光玻璃材料，对玻璃热稳定性、光谱性质进行了表征，并在其上采用离子交换法制作了平面光波导．掺铒碲钨酸盐玻璃的转变温度Tg和析品开始温度Tx分别为377．1和488．5℃；荧光半高宽为52nm；应用McCumber理论，计算得出Er^3+离子4I13／2→^4I15／2跃迁在峰值波长1532nm的受激发射截面为0．91×10^-20cm^2．不同条件下制作了在632．8nm处多模的平面光波导，通过拟合得到Ag^+离子在300℃的有效扩散系数De为2．82×10^-1