MAX: A Multi Objective Memory Architecture eXploration Framework for Embedded Systems-on-Chip

Today's feature-rich multimedia products require embedded system solution with complex System-on-Chip (SoC) to meet market expectations of high performance at a low cost and lower energy consumption. The memory architecture of the embedded system strongly influences these parameters. Hence the embedded system designer performs a complete memory architecture exploration. This problem is a multi-objective optimization problem and can be tackled as a two-level optimization problem. The outer level explores various memory architecture while the inner level explores placement of data sections (data layout problem) to minimize memory stalls. Further, the designer would be interested in multiple optimal design points to address various market segments. However, tight time-to-market constraints enforces short design cycle time. In this paper we address the multi-level multi-objective memory architecture exploration problem through a combination of Multi-objective Genetic Algorithm (Memory Architecture exploration) and an efficient heuristic data placement algorithm. At the outer level the memory architecture exploration is done by picking memory modules directly from a ASIC memory Library. This helps in performing the memory architecture exploration in a integrated framework, where the memory allocation, memory exploration and data layout works in a tightly coupled way to yield optimal design points with respect to area, power and performance. We experimented our approach for 3 embedded applications and our approach explores several thousand memory architecture for each application, yielding a few hundred optimal design points in a few hours of computation time on a standard desktop.

Two-level Mapping Based Cache Index Selection for Packet Forwarding Engines

Packet forwarding is a memory-intensive application requiring multiple accesses through a trie structure. The efficiency of a cache for this application critically depends on the placement function to reduce conflict misses. Traditional placement functions use a one-level mapping that naively partitions trie-nodes into cache sets. However, as a significant percentage of trie nodes are not useful, these schemes suffer from a non-uniform distribution of useful nodes to sets. This in turn results in increased conflict misses. Newer organizations such as variable associativity caches achieve flexibility in placement at the expense of increased hit-latency. This makes them unsuitable for L1 caches.We propose a novel two-level mapping framework that retains the hit-latency of one-level mapping yet incurs fewer conflict misses. This is achieved by introducing a secondlevel mapping which reorganizes the nodes in the naive initial partitions into refined partitions with near-uniform distribution of nodes. Further as this remapping is accomplished by simply adapting the index bits to a given routing table the hit-latency is not affected. We propose three new schemes which result in up to 16% reduction in the number of misses and 13% speedup in memory access time. In comparison, an XOR-based placement scheme known to perform extremely well for general purpose architectures, can obtain up to 2% speedup in memory access time.

Hydrothermal synthesis of CdTe QDs: Their luminescence quenching in the presence of bio-molecules and observation of bistable memory effect in CdTe QD/PEDOT:PSS heterostructure

We report one-pot hydrothermal synthesis of nearly mono-disperse 3-mercaptopropionic acid capped water-soluble cadmium telluride (CdTe) quantum dots (QDs) using an air stable Te source. The optical and electrical characteristics were also studied here. It was shown that the hydrothermal synthesis could be tuned to synthesize nano structures of uniform size close to nanometers. The emissions of the CdTe QDs thus synthesized were in the range of 500-700 nm by varying the duration of synthesis. The full width at half maximum (FWHM) of the emission peaks is relatively narrow (40-90 nm), which indicates a nearly uniform distribution of QD size. The structural and optical properties of the QDs were characterized by transmission electron microscopy (TEM), photoluminescence (PL) and Ultraviolet-visible (UV-Vis) spectroscopy. The photoluminescence quenching of CdTe QDs in the presence of L-cysteine and DNA confirms its biocompatibility and its utility for biosensing applications. The room temperature current-voltage characteristics of QD film on ITO coated glass substrate show an electrically induced switching between states with high and low conductivities. The phenomenon is explained on the basis of charge confinement in quantum dots. (C) 2011 Elsevier B.V. All rights reserved.

High-temperature deformation processing maps for a NiTiCu shape memory alloy

The properties of widely used Ni-Ti-based shape memory alloys (SMAs) are highly sensitive to the underlying microstructure. Hence, controlling the evolution of microstructure during high-temperature deformation becomes important. In this article, the ``processing maps'' approach is utilized to identify the combination of temperature and strain rate for thermomechanical processing of a Ni(42)Ti(50)Cu(8) SMA. Uniaxial compression experiments were conducted in the temperature range of 800-1050 degrees C and at strain rate range of 10(-3) and 10(2) s(-1). Two-dimensional power dissipation efficiency and instability maps have been generated and various deformation mechanisms, which operate in different temperature and strain rate regimes, were identified with the aid of the maps and complementary microstructural analysis of the deformed specimens. Results show that the safe window for industrial processing of this alloy is in the range of 800-850 degrees C and at 0.1 s(-1), which leads to grain refinement and strain-free grains. Regions of the instability were identified, which result in strained microstructure, which in turn can affect the performance of the SMA.

Scalable processes for fabricating non-volatile memory devices using self-assembled 2D arrays of gold nanoparticles as charge storage nodes

We propose robust and scalable processes for the fabrication of floating gate devices using ordered arrays of 7 nm size gold nanoparticles as charge storage nodes. The proposed strategy can be readily adapted for fabricating next generation (sub-20 nm node) non-volatile memory devices.

Interference in Multiprocessor Systems with Localized Memory Access Probabilities

Past studies of memory interference in multiprocessor systems have generally assumed that the references of each processor are uniformly distributed among the memory modules. In this paper we develop a model with local referencing, which reflects more closely the behavior of real-life programs. This model is analyzed using Markov chain techniques and expressions are derived for the multiprocessor performance. New expressions are also obtained for the performance in the traditional uniform reference model and are compared with other expressions-available in the literature. Results of a simulation study are given to show the accuracy of the expressions for both models.

Stress Evolution With Temperature in Titanium-Rich NiTi Shape Memory Alloy Films

The effect of deposition temperature on residual stress evolution with temperature in Ti-rich NiTi films deposited on silicon substrates was studied. Ti-rich NiTi films were deposited on 3? Si (100) substrates by DC magnetron sputtering at three deposition temperatures (300, 350 and 400 degrees C) with subsequent annealing in vacuum at their respective deposition temperatures for 4 h. The initial value of residual stress was found to be the highest for the film deposited and annealed at 400 degrees C and the lowest for the film deposited and annealed at 300 degrees C. All the three films were found to be amorphous in the as-deposited and annealed conditions. The nature of the stress response with temperature on heating in the first cycle (room temperature to 450 degrees C) was similar for all three films although the spike in tensile stress, which occurs at similar to 330 degrees C, was significantly higher in the film deposited and annealed at 300 degrees C. All the films were also found to undergo partial crystallisation on heating up to 450 degrees C and this resulted in decrease in the stress values around 5560 degrees C in the cooling cycle. The stress response with temperature in the second thermal cycle (room temperature to 450 degrees C and back), which is reflective of the intrinsic film behaviour, was found to be similar in all cases and the elastic modulus determined from the stress response was also more or less identical. The three deposition temperatures were also not found to have a significant effect on the transformation characteristics of these films such as transformation start and finish temperatures, recovery stress and hysteresis.