999 resultados para CMOS sensors


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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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This work describes the construction and application of two amperometric sensors for sensitive UV-filter determination. The sensors were prepared using stainless steel electrodes in which polyaniline (PANI) was electrochemically polymerized in the presence of nickel (NiPcTS) or iron (FePcTS) tetrasulfonated phthalocyanines. The sensor surface characterizations were carried out using atomic force microscopy (AFM). The PANI/NiPcTS sensor was selective for the chemical UV-filter p-aminobenzoic acid (PABA) and the PANI/FePcTS sensor was selective for octyldimethyl-PABA (ODP), both in a mixture of tetrahydrofuran (THF) and 0.1 mol L(-1) H(2)SO(4) at a volume ratio of 30 : 70, and with an applied potential of 0.0 mV vs. Ag vertical bar AgCl. A detailed investigation of the selectivity was carried out for both sensors, in order to determine their responses for ten different UV filters. Finally, each sensor was successfully applied to PABA or ODP quantification in sunscreen formulations and water from swimming pools.

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A linearly-tunable ULV transconductor featuring excellent stability of the processed signal common-mode voltage upon tuning, critical for very-low voltage applications, is presented. Its employment to the synthesis of CMOS gm-C high-frequency and voiceband filters is discussed. SPICE data describe the filter characteristics. For a 1.3 V-supply, their nominal passband frequencies are 1.0 MHz and 3.78 KHz, respectively, with tuning rates of 12.52 KHz/mV and 0.16 KHz/m V, input-referred noise spectral density of 1.3 μV/Hz1/2 and 5.0μV/Hz1/2 and standby consumption of 0.87 mW and 11.8 μW. Large-signal distortion given by THD = 1% corresponds to a differential output-swing of 360 mVpp and 480 mVpp, respectively. Common-mode voltage deviation is less than 4 mV over tuning interval.

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This paper presents a high speed current mode CMOS comparator. The comparator was optimized for allows wide range input current 1mA, ±0.5uA resolution and has fast response. This circuit was implemented with 0.8μm CMOS n-well process with area of 120μm × 105μm and operates with 3.3V(±1.65V).

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Piezoelectric composite, made from ferroelectric ceramic lead zirconate titanate (PZT) and vegetable based polyurethane (PU) polymer, was doped with a semiconductor filler, graphite. The resulting composite (PZT/C/PU) with 49/1/50- vol. % composition could be poled at lower field and shorter time due to the increased conductivity of the polymer phase following the introduction of graphite. The PZT/C/PU composite showed higher pyroelectric coefficient in comparison with the undoped PZT/PU composite with 50/50-vol. % composition. Also, the PZT/C/PU composite has shown the ability to detect both extensional and flexural modes of simulated acoustic emission (AE) at a distance up to 8.0 m from the source, thus indicating that it may be used for detection of structural damages.

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A new topology for a LVLP variable-gain CMOS amplifier is presented. Input- and load-stage are built around triode-transconductors so that voltage-gain is fully defined by a linear relationship involving only device-geometries and biases. Excellent gain-accuracy, temperature-insensitivity; and wide range of programmability, are thus achieved. Moreover, adaptative biasing improves the common-mode voltage stability upon gain-adjusting. As an example, a 0-40dB programmablegain audio-amplifier is designed. Its performance is supported by a range of simulations. For VDD=1.8V and 20dB-nominal gain, one has Av=19.97dB, f3db=770KHz and quiescent dissipation of 378μW. Over temperatures from -25°C to 125°C, the 0. ldB-bandwidth is 52KHz. Dynamic-range is optimized to 57.2dB and 42.6dB for gains of 20dB and 40dB, respectively. THD figures correspond to -60.6dB@Vout= 1Vpp and -79.7dB@Vout= 0.5 Vpp. A nearly constant bandwidth for different gains is also attained.

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Potentiometric, amperometric and conductometric electrochemical sensors have found a number of interesting applications in the areas of environmental, industrial, and clinical analyses. This review presents a general overview of the three main types of electrochemical sensors, describing fundamental aspects, developments and their contribution to the area of analytical chemistry, relating relevant aspects of the development of electrochemical sensors in Brazil.

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It is very important for the building of the SAW devices to study dielectric and ferroelectrics properties because every SAW device is based in piezoelectric effect that it is made up to transform an electric sign in the mechanical or acoustic sign and a mechanical or acoustic sign in an electric sign. Thus, the purpose of the present work is to prepare PbZr 0,53Ti0.47O3 (PZT) and PbTiO3 (PT) thin films on the Si (100) substrates across spin-coating using a chemical method based in polymeric precursors. After conventional treatment in the furnace, the films were characterized by impedance spectroscopy and hysteresis loops to know its dielectric and ferroelectric properties.

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Composites made of calcium modified lead titanate ceramic powder and poly (ether-ether-ketone) high performance polymer matrix were prepared in the film form using a hot press. The acoustic and electromechanical properties of the composites have been determined using the ultrasonic immersion technique and piezoelectric spectroscopy, respectively. The composite film with 60 - 40 vol.% PTCa/PEEK was tested as acoustic emission detector. Preliminary results shown that the piezo composite can be used as sensor to evaluate the behavior of materials.

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Composites made of Calcium-modified lead titanate (PTCa) and poly (ether-etherketone) (PEEK) high performance polymer matrix were prepared in the film form using a hot press. The ceramic volume fraction reaches up to 60 percent providing a composite with 0-3 and 1-3 mixed connectivities due to the high ceramic content and the resulting materials could be considered PEEK-bonded PTCa particulate composite. The composites were characterized using piezoelectric spectroscopy and ultrasonic immersion techniques. Values up to 38.5 pC/N were obtained for the longitudinal d33 piezoelectric coefficient. The composite was surface-mounted on a carbon fiber plate-like specimen and the ability of the PTCa/PEEK composite to detect acoustic emission (AE) is reported. © 2006 IEEE.

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An important stage in the solution of active vibration control in flexible structures is the optimal placement of sensors and actuators. In many works, the positioning of these devices in systems governed for parameter distributed is, mainly, based, in controllability approach or criteria of performance. The positions that enhance such parameters are considered optimal. These techniques do not take in account the space variation of disturbances. An way to enhance the robustness of the control design would be to locate the actuators considering the space distribution of the worst case of disturbances. This paper is addressed to include in the formulation of problem of optimal location of sensors and piezoelectric actuators the effect of external disturbances. The paper concludes with a numerical simulation in a truss structure considering that the disturbance is applied in a known point a priori. As objective function the C norm system is used. The LQR (Linear Quadratic Regulator) controller was used to quantify performance of different sensors/actuators configurations.

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A novel instrumentation using anisotropic magnetoresistive (AMR) sensors associated with magnetic coils excitation was developed to evaluate gastrointestinal tract motility parameters. The susceptometer has four sensors that were used to measure the gastric activity contractions (GAC) in anaesthetized dogs, its performance was evaluated by manometry with good results.

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An analysis of the active pixel sensor (APS), considering the doping profiles of the photodiode in an APS fabricated in a 0.18 μm standard CMOS technology, is presented. A simple and accurate model for the junction capacitance of the photodiode is proposed. An analytic expression for the output voltage of the APS obtained with this capacitance model is in good agreement with measurements and is more accurate than the models used previously. A different mode of operation for the APS based on the dc level of the output is suggested. This new mode has better low-light-level sensitivity than the conventional APS operating mode, and it has a slower temporal response to the change of the incident light power. At 1μW/cm2 and lower levels of light, the measured signal-to-noise ratio (SNR) of this new mode is more than 10 dB higher than the SNR of previously reported APS circuits. Also, with an output SNR of about 10 dB, the proposed dc level is capable of detecting light powers as low as 20 nW/cm2, which is about 30 times lower than the light power detected in recent reports by other groups. © 2007 IEEE.

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A novel multisampling time-domain architecture for CMOS imagers with synchronous readout and wide dynamic range is proposed. The architecture was implemented in a prototype of imager with 32x32 pixel array fabricated in AMS CMOS 0.35νm and was characterized for sensitivity and color response. The pixel is composed of an n+/psub photodiode, a comparator and a D flip-flop having 16% fill-factor and 30νmx26νm dimensions. The multisampling architecture requires only a 1 bit per pixel memory instead of 8 bits which is typical for time-domain active pixel architectures. The advantage is that the number of transistors in the pixel is low, saving area and providing higher fill-factor. The maximum frame rate is analyzed as a function of number of bits and array size. The analysis shows that it is possible to achieve high frame rates and operation in video mode with 10 bits. Also, we present analysis for the impact of comparator offset voltage in the fixed pattern noise. Copyright 2007 ACM.