964 resultados para BURIED-HETEROSTRUCTURE
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The present study characterizes the physical environment for its fragility and its capacity to support, through geological and geomorphological properties in the study area, concerning primarily with a sustainable environmental planning for the construction and maintenance of buried linear works. The study area is located on a portion of the Paraiba Valley, which is between the latitudes 22 °30' S and 23°00' S and longitudes 44°30' W and 45° 15' W, between cities of Aparecida (SP) and Queluz (SP). The methodology was based in the visual interpretation of TM/Landsat-7 images, using as a criterion the element textural image and its way of organizing space. To do so, it was set five levels of textural density, enabling thus to the partitioning of the area in areas counterparts (Z.H.s). As a result, it was identified 133 Z.H.s. By using the same criterion textural image the following physical properties were classified: Erosion Resistance, Permeability, Plasticity X Brittle, Tropia and Relief Asymmetry for each zone counterpart, and then grouped themselves as they hold all properties equal in Units Geoenvironmental (U.G.s). As a result it was identified 18 U.G.s. The work presents, as a final result, a thematic map with favorable or restrictable sectores to the design of buried linear works. Based on this map, it can be propose traces to buried linear works, analyzing their suitability to the physical environment and reducing the impacts caused to the environment.
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Supermarket plastic bags are produced by high density polyethylene (HDPE) and low density polyethylene (LDPE) resins. In Brazil, are produced annually around 150 plastic bags per capita. Disposed in landfills, the supermarket plastic bags prevent the passage of water by slowing the breakdown of biodegradable materials and hindering compaction of waste, according to their low degradability. This work investigated the biodegradation of PE bags containing additive oxo-biodegradable and bags without additives: buried in soil columns, exposed in a controlled environment and exposed to air. The analysis methods used to assess the changes brought in the bags with respect to microbial action and exposure time were weight loss, thickness measurement, infrared (FTIR), scanning electron microscopy (SEM) and contact angle. The results showed that the use of prodegradant agents such as oxobiodegradable additives in polyethylene bags, buried in soil for 270 days, was not efficient to accelerate the biodegradation by microorganisms. It seems that these additives have been more efficient to degrade the colored pigmentation of printed bags, under the influence of light and heat.
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Pós-graduação em Cirurgia Veterinária - FCAV
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Pós-graduação em Agronomia (Ciência do Solo) - FCAV
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Pós-graduação em Engenharia Civil e Ambiental - FEB
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Pós-graduação em Engenharia Civil - FEIS
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O-2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550 degrees C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.
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TiO2/SnO2 thin films heterostructures were grown by the sol-gel dip-coating technique. It was found that the crystalline structure of TiO2 depends on the annealing temperature and the substrate type. TiO2 films deposited on glass substrate, submitted to thermal annealing until 550 degrees C, present anatase structure, whereas films deposited on quartz substrate transform to rutile structure when thermally annealed at 1100 degrees C. When structured as rutile, this oxide semiconductor has very close lattice parameters to those of SnO2, making easier the heterostructure assembling. The electrical properties of TiO2/SnO2 heterostructure were evaluated as function of temperature and excitation with different light sources. The temperature dependence of conductivity is dominated by a deep level with energy coincident with the second ionization level of oxygen vacancies in SnO2, suggesting the dominant role of the most external layer material (SnO2) to the electrical transport properties. The fourth harmonic of a Nd:YAG laser line (4.65 eV) seems to excite the most external layer whereas a InGaN LED (2.75 eV) seems to excite electrons from the ground state of a quantized interfacial channel as well as intrabandgap states of the TiO2 layer.
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Pós-graduação em Bases Gerais da Cirurgia - FMB
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Pós-graduação em Agronomia (Ciência do Solo) - FCAV
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550°C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.