Effects of Fracture Seepage on the Stability of Landslide during Reservoir Water Level Fluctuation

The hydraulic conductivity function of fractures is a key scientific question to describe and reveal the process and the role of water seepage reasonably. In this paper, the generation technology of random fracture network and the latest numerical computation method for equivalent permeability tensor of fracture network are applied to analyze the landslide located at Wangjiayuanzi in Wanzhou District of Chongqing by simulating the changes of the seepage field caused by the running of the Three Gorges Reservoir. The influences of the fracture seepage on the seepage field and stability of the landslide were discussed with emphasis. The results show that the fractures existing in the soil increase the permeability coefficient of the landslide body and reduce the delay time of the underground water level in the landslide which fluctuates relative to the water level of reservoir，that causes the safe coefficient of the slope changes more gently than that of the same slope without fractures. It means, if only water level fluctuating condition is concerned, the fractures existing in the soil plays a positive role to the stability of slopes.

Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon, as-irradiated and after thermal annealing

Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscopy was employed to study the activation energy and capture cross-section of helium-induced defects in silicon samples. It was shown that the activation energy levels produced by helium-ion irradiation first increased with increasing annealing temperature, with the maximum value of the activation energy occurring at 873K, and reduced with further increase of the annealing temperature. The energy levels of defects in the samples annealed at 873 and 1073K are found to be located near the mid-forbidden energy gap level so that they can act as thermally stable carrier recombination centres.