980 resultados para Analytical strategy
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This was a follow up to the workshop held in October, 2014. This second workshop consolidated findings an and recommendations and highlighted the importance of cooperation between Department of Fisheries (DoF) and non-state actors.
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OVERVIEW: Kodak European Research (KER) developed a strategy for technology intelligence based on a theoretical model developed by Kerr et al. (2006). KER scouts designed and implemented a four-step approach to identify relevant technologies and research centers across Europe, Africa and the Middle East. The approach provides clear guidance for integrating web searches, scouting trips, networking and interactions with intermediaries. KER's example illustrates how companies can organize themselves to look outside corporate boundaries in search of technologies relevant for their business. The approach may be useful to those in other companies who have been asked to start a technology intelligence activity. © 2010 Industrial Research Institute, Inc.
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A sensor for chemical species or biological species or radiation presenting to test fluid a polymer composition comprises polymer and conductive filler metal, alloy or reduced metal oxide and having a first level of electrical conductance when quiescent and being convertible to a second level of conductance by change of stress applied by stretching or compression or electric field, in which the polymer composition is characterised by at least one of the features in the form of particles at least 90% w/w held on a 100 mesh sieve; and/or comprising a permeable body extending across a channel of fluid flow; and/or affording in-and-out diffusion of test fluid and/or mechanically coupled to a workpiece of polymer swellable by a constituent of test fluid.
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A steady-state, physically-based analytical model for the Trench Insulated Gate Bipolar Transistor which accounts for a combined PIN diode - PNP transistor carrier dynamics is proposed. Previous models (i.e. PIN model and PNP transistor model) cannot account properly for the carrier dynamics in Trench IGBT since neither the PNP transistor nor the PIN diode effect can be neglected. An optimized Trench IGBT with a large ratio between the accumulation layer and the cell size leads to substantially improved on-state characteristics, which makes the Trench IGBT potentially the most attractive device in the area of high voltage fast switching devices.