Operator, organizational, field, and depot maintenance manual : transistor test set TS-1836/U.

"12 December 1983"--Change no. 3.

Operator, organizational, direct support, and general support maintenance manual : test set, transistor TS-1836C/U.

"April 1972."

Operator's, organizational, direct support and general support maintenance manual : test set, transistor TS-1836D/U, NSN 6625-00-138-7320.

"August 1975."

Transistor circuit engineering.

Mode of access: Internet.

Proton Conducting Devices and Materials

Thesis (Ph.D.)--University of Washington, 2016-06

Controlling Long-Range Ordered Self-assembly of Solid-Binding Peptide Monolayers on Atomically Flat Layered Materials

Thesis (Master's)--University of Washington, 2016-06

Organic Semiconducing Thin Films: Device Applications and Beyond

Thesis (Master's)--University of Washington, 2016-06

Progress in silicon-based quantum computation

We review progress at the Australian Centre for Quantum Computer Technology towards the fabrication and demonstration of spin qubits and charge qubits based on phosphorus donor atoms embedded in intrinsic silicon. Fabrication is being pursued via two complementary pathways: a 'top-down' approach for near-term production of few-qubit demonstration devices and a 'bottom-up' approach for large-scale qubit arrays with sub-nanometre precision. The 'top-down' approach employs a low-energy (keV) ion beam to implant the phosphorus atoms. Single-atom control during implantation is achieved by monitoring on-chip detector electrodes, integrated within the device structure. In contrast, the 'bottom-up' approach uses scanning tunnelling microscope lithography and epitaxial silicon overgrowth to construct devices at an atomic scale. In both cases, surface electrodes control the qubit using voltage pulses, and dual single-electron transistors operating near the quantum limit provide fast read-out with spurious-signal rejection.

Introducing the pressure-sensing palatograph - the next frontier in electropalatography

Primary Objective. To extend the capabilities of current electropalatography (EPG) systems by developing a pressure-sensing EPG system. An initial trial of a prototype pressure-sensing palate will be presented. Research Design. The processes involved in designing the pressure sensors are outlined, with Hall effect transistors being selected. These units are compact, offer high sensitivity and are inexpensive. An initial prototype acrylic palate was constructed with five embedded pressure sensors. Syllable repetitions were recorded from one adult female. Main Outcomes, Results and Future Directions. The pressure-sensing palate was capable of recording dynamic tongue-to-palate pressures, with minimal to no interference to speech detected perceptually. With a restricted number of sensors, problems were encountered in optimally positioning the sensors to detect the consonant lingual pressures. Further developments are planned for various aspects of the pressure-sensing system. Conclusions. Although only in the prototype stage, the pressure-sensing palate represents the new generation of EPG. Comprehensive analysis of tongue-to-palate contacts, including pressure measures, is expected to enable more specific and effective therapeutic techniques to be developed for a variety of speech disorders.

COMMAD 04 proceedings

The following topics were dealt with: semiconductor growth (MBE, PECVD, MOCVD, MOVPE) and characterizations; high-electron mobility transistors (HEMTs); microcavity organic light emitting diode (MOLED); semiconductor superlattices; photodiode arrays; MEMS structures; lithography;semiconductor lasers; semiconductor optical amplifiers; surface treatment and annealing

The factors affecting the optimal performance of eddy-current machines

This thesis presents an examination of the factors which influence the performance of eddy-current machines and the way in which they affect optimality of those machines. After a brief introduction to the types of eddy-current machine considered, the applications to which these machines are put are examined. A list of parameters by which to assess their performance is obtained by considering the machine as part of a system. in this way an idea of what constitutes an optimal machine is obtained. The third chapter then identifies the factors which affects the performance and makes a quantitative evaluation of the effect. Here the various alternative configurations and components are compared with regard to their influence on the mechanical, electromagnetic, and thermal performance criteria of the machine. Chapter four contains a brief review of the methods of controlling eddy-current machines by electronic methods using thyristors or transistors as the final control element. Where necessary, the results of previous workers in the field of electrical machines have been extended or adapted to increase the usefulness of this thesis.

Electronic properties of homoepitaxial (111) highly boron-doped diamond films

The use of diamond as a semiconductor for the realization of transistor structures, which can operate at high temperatures (>700 K), is of increasing interest. In terms of bipolar devices, the growth of n-type phosphorus doped diamond is more efficient on the (111) growth plane; p-type boron-doped diamond growth has been most usually grown in the (100) direction and, hence, this study into the electronic properties, at high temperatures, of boron-doped diamond (111) homoepitaxial layers. It is shown that highly doped layers (hole carrier concentrations as high as 2×1020 cm-3) can be produced without promoting the onset of (unwanted) hopping conduction. The persistence of valance-band conduction in these films enables relatively high mobility values to be measured ( ~ 20 cm2/V?s) and, intriguingly, these values are not significantly reduced at high temperatures. The layers also display very low compensation levels, a fact that may explain the high mobility values since compensation is required for hopping conduction. The results are discussed in terms of the potential of these types of layers for use with high temperature compatible diamond transistors.

Online sensorless position estimation for switched reluctance motors using one current sensor

This paper proposes an online sensorless rotor position estimation technique for switched reluctance motors (SRMs) using just one current sensor. It is achieved by first decoupling the excitation current from the bus current. Two phase-shifted pulse width modulation signals are injected into the relevant lower transistors in the asymmetrical half-bridge converter for short intervals during each current fundamental cycle. Analog-to-digital converters are triggered in the pause middles of the dual pulse to separate the bus current for excitation current recognition. Next, the rotor position is estimated from the excitation current, by a current-rise-time method in the current-chopping-control mode in a low-speed operation and a current-gradient method in the voltage-pulse-control mode in a high-speed operation. The proposed scheme requires only a bus current sensor and a minor change to the converter circuit, without a need for individual phase current sensors or additional detection devices, achieving a more compact and cost-effective drive. The performance of the sensorless SRM drive is fully investigated. The simulation and experiments on a 750-W three-phase 12/8-pole SRM are carried out to verify the effectiveness of the proposed scheme.