Atomistic modeling of Ge damage accumulation, amorphization and solid phase epitaxial regrowth

En los últimos años, el Ge ha ganado de nuevo atención con la finalidad de ser integrado en el seno de las existentes tecnologías de microelectrónica. Aunque no se le considera como un canddato capaz de reemplazar completamente al Si en el futuro próximo, probalemente servirá como un excelente complemento para aumentar las propiedades eléctricas en dispositivos futuros, especialmente debido a su alta movilidad de portadores. Esta integración requiere de un avance significativo del estado del arte en los procesos de fabricado. Técnicas de simulación, como los algoritmos de Monte Carlo cinético (KMC), proporcionan un ambiente atractivo para llevar a cabo investigación y desarrollo en este campo, especialmente en términos de costes en tiempo y financiación. En este estudio se han usado, por primera vez, técnicas de KMC con el fin entender el procesado “front-end” de Ge en su fabricación, específicamente la acumulación de dañado y amorfización producidas por implantación iónica y el crecimiento epitaxial en fase sólida (SPER) de las capas amorfizadas. Primero, simulaciones de aproximación de clisiones binarias (BCA) son usadas para calcular el dañado causado por cada ión. La evolución de este dañado en el tiempo se simula usando KMC sin red, o de objetos (OKMC) en el que sólamente se consideran los defectos. El SPER se simula a través de una aproximación KMC de red (LKMC), siendo capaz de seguir la evolución de los átomos de la red que forman la intercara amorfo/cristalina. Con el modelo de amorfización desarrollado a lo largo de este trabajo, implementado en un simulador multi-material, se pueden simular todos estos procesos. Ha sido posible entender la acumulación de dañado, desde la generación de defectos puntuales hasta la formación completa de capas amorfas. Esta acumulación ocurre en tres regímenes bien diferenciados, empezando con un ritmo lento de formación de regiones de dañado, seguido por una rápida relajación local de ciertas áreas en la fase amorfa donde ambas fases, amorfa y cristalina, coexisten, para terminar en la amorfización completa de capas extensas, donde satura el ritmo de acumulación. Dicha transición ocurre cuando la concentración de dañado supera cierto valor límite, el cual es independiente de las condiciones de implantación. Cuando se implantan los iones a temperaturas relativamente altas, el recocido dinámico cura el dañado previamente introducido y se establece una competición entre la generación de dañado y su disolución. Estos efectos se vuelven especialmente importantes para iones ligeros, como el B, el cual crea dañado más diluido, pequeño y distribuido de manera diferente que el causado por la implantación de iones más pesados, como el Ge. Esta descripción reproduce satisfactoriamente la cantidad de dañado y la extensión de las capas amorfas causadas por implantación iónica reportadas en la bibliografía. La velocidad de recristalización de la muestra previamente amorfizada depende fuertemente de la orientación del sustrato. El modelo LKMC presentado ha sido capaz de explicar estas diferencias entre orientaciones a través de un simple modelo, dominado por una única energía de activación y diferentes prefactores en las frecuencias de SPER dependiendo de las configuraciones de vecinos de los átomos que recristalizan. La formación de maclas aparece como una consecuencia de esta descripción, y es predominante en sustratos crecidos en la orientación (111)Ge. Este modelo es capaz de reproducir resultados experimentales para diferentes orientaciones, temperaturas y tiempos de evolución de la intercara amorfo/cristalina reportados por diferentes autores. Las parametrizaciones preliminares realizadas de los tensores de activación de tensiones son también capaces de proveer una buena correlación entre las simulaciones y los resultados experimentales de velocidad de SPER a diferentes temperaturas bajo una presión hidrostática aplicada. Los estudios presentados en esta tesis han ayudado a alcanzar un mejor entendimiento de los mecanismos de producción de dañado, su evolución, amorfización y SPER para Ge, además de servir como una útil herramienta para continuar el trabajo en este campo. In the recent years, Ge has regained attention to be integrated into existing microelectronic technologies. Even though it is not thought to be a feasible full replacement to Si in the near future, it will likely serve as an excellent complement to enhance electrical properties in future devices, specially due to its high carrier mobilities. This integration requires a significant upgrade of the state-of-the-art of regular manufacturing processes. Simulation techniques, such as kinetic Monte Carlo (KMC) algorithms, provide an appealing environment to research and innovation in the field, specially in terms of time and funding costs. In the present study, KMC techniques are used, for the first time, to understand Ge front-end processing, specifically damage accumulation and amorphization produced by ion implantation and Solid Phase Epitaxial Regrowth (SPER) of the amorphized layers. First, Binary Collision Approximation (BCA) simulations are used to calculate the damage caused by every ion. The evolution of this damage over time is simulated using non-lattice, or Object, KMC (OKMC) in which only defects are considered. SPER is simulated through a Lattice KMC (LKMC) approach, being able to follow the evolution of the lattice atoms forming the amorphous/crystalline interface. With the amorphization model developed in this work, implemented into a multi-material process simulator, all these processes can be simulated. It has been possible to understand damage accumulation, from point defect generation up to full amorphous layers formation. This accumulation occurs in three differentiated regimes, starting at a slow formation rate of the damage regions, followed by a fast local relaxation of areas into the amorphous phase where both crystalline and amorphous phases coexist, ending in full amorphization of extended layers, where the accumulation rate saturates. This transition occurs when the damage concentration overcomes a certain threshold value, which is independent of the implantation conditions. When implanting ions at relatively high temperatures, dynamic annealing takes place, healing the previously induced damage and establishing a competition between damage generation and its dissolution. These effects become specially important for light ions, as B, for which the created damage is more diluted, smaller and differently distributed than that caused by implanting heavier ions, as Ge. This description successfully reproduces damage quantity and extension of amorphous layers caused by means of ion implantation reported in the literature. Recrystallization velocity of the previously amorphized sample strongly depends on the substrate orientation. The presented LKMC model has been able to explain these differences between orientations through a simple model, dominated by one only activation energy and different prefactors for the SPER rates depending on the neighboring configuration of the recrystallizing atoms. Twin defects formation appears as a consequence of this description, and are predominant for (111)Ge oriented grown substrates. This model is able to reproduce experimental results for different orientations, temperatures and times of evolution of the amorphous/crystalline interface reported by different authors. Preliminary parameterizations for the activation strain tensors are able to also provide a good match between simulations and reported experimental results for SPER velocities at different temperatures under the appliance of hydrostatic pressure. The studies presented in this thesis have helped to achieve a greater understanding of damage generation, evolution, amorphization and SPER mechanisms in Ge, and also provide a useful tool to continue research in this field.

Physical properties and bulk organic geochemical results for sediments from DSDP Hole 96-619

The concentration and carbon isotopic composition (d13C) of sedimentary organic carbon (C_org), N/C ratios, and terrigenous and marine d13C_org endmembers form a basis from which to address problems of Late Quaternary glacial-interglacial climatic variability in a 208.7 m hydraulic piston core (DSDP 619) from the Pigmy Basin in the northern Gulf of Mexico. While interpretations of sedimentary d13C_org time series records are often not unique, paired analyses of d13C_org and N/C are consistent with the hypothesis that the C_org in the Pigmy Basin is a climatically determined mixture of C3-photosynthetic terrigenous and marine organic matter, confirming the earlier d13C_org model of Sackett (1964). A high resolution (~1.4-2.9 Ka/sample) d13C_org record shows that sedimentary organic carbon in interglacial oxygen isotope (sub)stages 1 and 5a-b are enriched in 13C (average +/-1 sigma values are -24.2+/-1.2? and -22.9+/-0.7? relative to PDB, respectively) while glacial isotope stage values 2 are relatively depleted (-25.6+/-0.5?). Concentrations of terrigenous and marine sedimentary organic carbon are calculated for the first time using d13C_org and C_org measurements, and empirically determined terrigenous and marine d13C_org endmembers. The net accumulation rate of terrigenous organic carbon is 4.3+/-2.6 times higher in isotope stages 2-4 than in (sub)stages 1 and 5a-b, recording higher erosion rates of terrigenous organic material in glacial times. The concentration and net accumulation rates of marine and terrigenous C_org suggest that the nutrient-bearing plume of the Mississippi River may have advanced and retreated across the Pigmy Basin as sea level fell and rose in response to glacial-interglacial sea level change.

Eolian and silica deposition of ODP sites in the central North Pacific

Sediments recovered at Ocean Drilling Program Sites 885/886 (central North Pacific Ocean at 44°41'N, 168°14'W and 44°41'N, 168°16'W, respectively) record eolian deposition during the Cenozoic and late Mesozoic. We constructed a record of eolian MAR, which is a proxy for aridity/humidity of the climate in the continental source area. Eolian fluxes are low during the Late Cretaceous through Eocene, reflecting humid conditions in the source area. During the Oligocene, more arid climates prevailed at the source area, as indicated by increased eolian accumulation. The "Diatom Dump", an interval of enhanced silica deposition mainly apparent in the northwest Pacific, is reflected in the record at Sites 885/886 by two- to fivefold higher opal fluxes compared with younger and older sediments. Increased eolian deposition starting at 3.5 Ma and culminating at 2-2.6 Ma are coincident with the onset of Northern Hemisphere glaciation. Sites 885/886 lie 10° north of sites examined previously for the history of eolian deposition in the central North Pacific and therefore allow enhanced understanding of the latitudinal variation of the wind system.

Bulk sediment parameter of surface sediment samples (Table 3)

Comparison of rates of accumulation of organic carbon in surface marine sediments from the central North Pacific, the continental margins off northwest Africa, northwest and southwest America, the Argentine Basin, and the western Baltic Sea with primary production rates suggests that the fraction of primary produced organic carbon preserved in the sediments is universally related to the bulk sedimentation rate. Accordingly, less than 0.01% of the primary production becomes fossilized in slowly accumulating pelagic sediments [(2 to 6 mm (1000 y)**-1] of the Central Pacific, 0.1 to 2% in moderately rapidly accumulating [2 to 13 cm (1000 y)**-1] hemipelagic sediments off northwest Africa, northwest America (Oregon) and southeast America (Argentina), and 11 to 18% in rapidly accumulating [66 to 140 cm (1000 y)**-1] hemipelagic sediments off southwest America (Peru) and in the Baltic Sea. The emiprical expression: %Org-C = (0.0030*R*S**0.30)/(ps(1-Theta)) implies that the sedimentary organic carbon content (% Org-C) doubles with each 10-fold increase in sedimentation rate (S), assuming that other factors remain constant; i.e., primary production (R), porosity and sediment density (ps). This expression also predicts the sedimentary organic carbon content from the primary production rate, sedimentation rate, dry density of solids, and their porosity; it may be used to estimate paleoproductivity as well. Applying this relationship to a sediment core from the continental rise off northwest Africa (Spanish Sahara) suggests that productivity there during interglacial oxygen isotope stages 1 and 5 was about the same as today but was higher by a factor of 2 to 3 during glacial stages 2, 3, and 6.