947 resultados para AB(2) SELF-POLYMERIZATION


Relevância:

30.00% 30.00%

Publicador:

Resumo:

Experimental demonstrations of the use of a self-imaging resonator in the phase locking of two fibre lasers are presented. The output power of the phase-locked fibre laser array exceeded 2 W Successful attempts of phase locking show that the fibre laser array is not only capable of producing high Output Power but also large on-axis intensity by this method.

Relevância:

30.00% 30.00%

Publicador:

Resumo:

Using a home-made seed at 1053 nm from a Yb3+-doped passively mode-locked fiber laser of 1.5 nJ/pulse, 362 ps pulse duration with a repetition rate of 3.842 MHz, a compact, low cost, stable and excellent beam quality non-collinear chirped pulse optical parametric amplifier omitting the bulky pulse stretcher has been demonstrated. A gain higher than 4.0 x 10(6), single pulse energy exceeding 6 mJ with fluctuations less than 2% rms, 14 nm amplified signal spectrum and recompressed pulse duration of 525 fs are achieved. This provides a novel and simple amplification scheme. (c) 2007 Optical Society of America.

Relevância:

30.00% 30.00%

Publicador:

Resumo:

本文试图用Solvay型的Ziegler-Natta催化剂合成PP-EPR,PP-EPR-PP嵌段共聚物,作为乙丙橡胶(EPT)和聚丙烯(PP)的增容剂,来提高聚丙烯的抗冲击强度,并从力学性能、动态力学谱和形态等方面研究增容剂的增容效果。Ziegler-Natta催化剂能否合成乙丙嵌段共聚物是一个有争议的问题。为此,我们利用改进型的Solvay δ-TiCl_3-Et_2AlCl在已烷中加压淤浆聚合丙烯,发现在120分钟之前,聚丙烯的分子量随时间迅速增加,超过120分钟则变缓慢,并趋向于平衡。这说明催化剂活性中心上的活性链最小有120分钟的时间,若在该时间内用聚合过程中换反应单体的办法,有可能合成嵌段共聚物。乙丙嵌段共聚物形成的直接证明是利用(PP-PE)_(50)。通过气相色谱检测发现,抽真空3分钟可以保证换反应气体的纯度,因而用气相聚合可以得到各段纯净的(PP-PE)_(50)多嵌段共聚物,该嵌段的~(13)c-NMR研究表明,在35.68ppm处存在以化学键相连的长乙烯和长丙烯链的特征共振峰。PGC的研究发现,其在热裂解中产生的G碎片比PP/P混物的多,GC-MS的研究表明G碎片由含7个碳的烃组成的混合物,组分之一具有嵌段共聚物的裂解特征。对PP-EPR系列产物和PP-EPR-PP(5-60-20)用扭摆法进和动态力学分析表明,这些嵌段共聚物只在-30℃左右有一个玻璃化转变。而相应的共混物则分别在-50℃和5℃出现两个玻璃化转变,且各T_g不随组成比和共混方法而变化。这是由于嵌段共聚物中各段间化学键的作用,使各段的T_g内移,从而使较靠近的两个T_g合二为一,在动态力学谱上只表现出一个T_g。粘弹谱仪测定的结果基本上同扭摆法的结果。尽管我们尚未准确地测定出乙丙嵌段共聚物中EPR段的分子量,但我们弄清了PP段的立体构型、等规度、分子量、结晶度和EPR段的乙丙比、无规乙丙共聚物的含量、含有长序列乙烯的结晶度等结构因素。用不同段长的PP-EPR作PP/EPT共混物的增容剂,发现降低PP-EPR中PP段的分子量,三元共混物的力学性能明显升高,而增加EPR段的分子量即聚合时间,其无缺口冲击强度先增加而后又降低,说明有一个EPR段最佳长度范围。根据该现象我们提出模型并进行了解释。结晶度的规律与冲击强度的规律相同,对冲击强度提高较大的增容剂,共混物中PP的结晶度降低,但抗张性能却升高,说明增容剂在两相界面起到主价的连接作用。扭摆法和粘弹谱仪测定的动态力学谱表明,增容剂的加入减小了聚丙烯结晶无序化转变,使PP的T_g突出出来。形态的研究说明,PP-EPR还起了“乳化剂”的作用,使EPT在PP连续相中均匀分散,且其微区大小适中。在PP/EPT(85/15)中加入4%的PP-EPR(5-30)嵌段共聚物,室温(20℃)的“冲击屈服强度”与PP/EPT的相同,-20℃的冲击强度为112kg·cm/cm~2,是PP/EPT的1.5倍,-40℃为72kg·cm/cm~2,是PP/EPT的1.9倍,在应力-应变实验中,三元共混物PP/EPT/PP-EPR(5-30)的σ_b*ε_b为2.97*10~5。比相应的PP/EPT(2.27*10~5)有所提高。说明PP-EPR(5-30)对PP/EPT有良好的增容效果,比文献中使用的PP-EPR(15-55)效果好。用PP-EPR-PP三嵌段共聚物作PP/EPT的增容剂,实验证明比PP-EPR二嵌段共聚物有更好的增容效果。例如,在PP/EPT(85/15)中加入4%的PP-EPR-PP(5-60-20),试样不但在20℃,而且在-20℃均未被冲断;在-20℃的“冲击屈服强度”是PP/EPT冲击强度的1.4倍,PP的9.0倍,-40℃的冲击强度是PP/EPT的2.2倍,PP的8.4倍;且其σ_b*ε_b(2.62*10~5)比PP/EPT(2.60*10~5)的有一定的提高,比PP的(2.45*10~5)也高。对PP/EPT/PP-EPR-PP(5-60-20)三元共混物的试样在-40℃冲断面的形态进行研究表明,加入增容剂的共混物断面凹凸不平,是韧性断裂的特征,且在断裂过程中EPT微区被牵拉出的EPT较多,说明PP和EPT的相界面的作用力较大,增容剂起到了主价键的连接作用。动态力学谱表明,增容剂的加入降低了PP结晶无序化转变。而液氮冷冻的脆断面的形态说明,PP-EPR-PP起到了“乳化剂”的作用,使EPT在PP连续相中大小均匀地分散开。

Relevância:

30.00% 30.00%

Publicador:

Resumo:

胚胎干细胞(ESC)培养是ESC研究的基础,饲养层的选择是ESC培养的一个重要方面。本实验曾对不同的猕猴饲养层进行研究,显示能够更好的支持猕猴ESC生长的饲养层FGF-2表达量也较高。FGF-2,又名bFGF(碱性成纤维生长因子),是ESC生长所需的重要因子,但其中的分子机制现在并未完全了解。本文一方面对ESC相关研究进展进行了综述,另一方面对以下内容进行了研究:用转基因和RNA干(RNAi)扰的方法建立不同FGF-2的表达量猕猴耳部皮肤细胞(MESF)系五组:过表达FGF-2(f1),过表达的阴性对照组(f2),FGF-2 RNA干扰组(f3),RNA干扰的阴性对照组(f4)以及未作任何处理的对照组(f5),这五组MESF的FGF-2表达量相对值为f1:f2:f3:f4:f5=4:2:1:2:2;c-fos,TGF-β1,INHBA,Gremlin1在f1中表达量上升,在f3中表达量下降;BMP4,TGF-β2在f1中表达量下降,在f3中表达量上升;表明内源FGF-2能够作用于MESF的TGF-β信号通路,引起相关基因表达量的变化。用这些细胞作为饲养层分别培养两种ESC(猕猴ESC,R366. 4和兔ESC,RFESC) ,连续培养了10代,其中在f1上培养的两种ESC增殖速度都比对照组快,并且c-fos,TGF-β1,INHBA,Gremlin1,OCT-4,Nanog,Sox2表达量均上升,BMP4表达下调;在f3上培养的猕猴ESC增殖较慢,BMP4表达上调,c-fos,TGF-β1,INHBA,Gremlin1,OCT-4,Nanog,Sox2表达下调;f3上的兔ESC没有变化。表明ESC中的TGF-β信号通路也受到调节。五组猕猴和兔的ESC形成的EB均表达各胚层早期标记基因(marker),但表达量有差异,f1上ESC形成的EB所有marker都低表达。实验结果表明饲养层中的FGF-2含量高低不仅影响自身相关基因的表达,还对ESC的增殖和维持自我更新有一定的作用。

Relevância:

30.00% 30.00%

Publicador:

Resumo:

The magnetocapacitive response of a double-barrier structure (DBS), biased beyond resonances, has been employed to determine the density of states (DOS) of the two-dimensional electron gas residing in the accumulation layer on the incident side of the DBS. An adequate procedure is developed to compare the model calculation of the magnetocapacitance with the experimental C vs B curves measured at different temperatures and biases. The results show that the fitting is not only self-consistent but also remarkably good even in well-defined quantum Hall regimes. As a result, information about the DOS in strong magnetic fields could reliably be extracted.

Relevância:

30.00% 30.00%

Publicador:

Resumo:

Intervalley GAMMA - X deformation potential constants (IVDP's) have been calculated by first principle pseudopotential method for the III-V zincblende semiconductors AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb. As a prototype crystal we have also carried out calculations on Si. When comparing the calculated IVDP's of LA phonon for GaP, InP and InAs and LO phonon for AlAs, AlSb, GaAs, GaSb and InSb with a previous calculation by EPM in rigid approximation, good agreements are found. However, our ab initio pseudopotential results of LA phonon for AlAs, AlSb, GaAs, GaSb and InSb and LO phonon for GaP, InP and InAs are about one order of magnitude smaller than those obtained by EPM calculations, which indicate that the electron redistributions upon the phonon deformations may be important in affecting GAMMA - X intervalley shatterings for these phonon modes when the anions are being displaced. In our calculations the phonon modes of LA and LO at X point have been evaluated in frozen phonon approximation. We have obtained, at the same time, the LAX and LOX phonon frequencies for these materials from total energy calculations. The calculated phonon frequencies agree very well with experimental values for these semiconductors.

Relevância:

30.00% 30.00%

Publicador:

Resumo:

We have applied the Green-function method in the GW approximation to calculate quasiparticle energies for the semiconductors GaP and GaAs. Good agreement between the calculated excitation energies and the experimental results was achieved. We obtained calculated direct band gaps of GaP and GaAs of 2.93 and 1.42 eV, respectively, in comparison with the experimental values of 2.90 and 1.52 eV, respectively. An ab initio pseudopotential method has been used to generate basis wave functions and charge densities for calculating the dielectric matrix elements and self-enegies. To evaluate the dynamical effects of the screened interaction, the generalized-plasma-pole model has been utilized to extend the dielectric matrix elements from static results to finite frequencies. We presen the calculated quasiparticle energies at various high-symmetry points of the Brillouin zone and compare them with the experimental results and other calculations.

Relevância:

30.00% 30.00%

Publicador:

Resumo:

We successfully applied the Green function theory in GW approximation to calculate the quasiparticle energies for semiconductors Si and GaAs. Ab initio pseudopotential method was adopted to generate basis wavefunctions and charge densities for calculating dielectric matrix elements and electron self-energies. To evaluate dynamical effects of screened interaction, GPP model was utilized to extend dieletric matrix elements from static results to finite frequencies. We give a full account of the theoretical background and the technical details for the first principle pseudopotential calculations of quasiparticle energies in semiconductors and insulators. Careful analyses are given for the effective and accurate evaluations of dielectric matrix elements and quasiparticle self-energies by using the symmetry properties of basis wavefunctions and eigenenergies. Good agreements between the calculated excitation energies and fundamental energy gaps and the experimental band structures were achieved.

Relevância:

30.00% 30.00%

Publicador:

Resumo:

To evaluate the dynamical effects of the screened interaction in the calculations of quasiparticle energies in many-electron systems a two-delta-function generalized plasma pole model (GPP) is introduced to simulate the dynamical dielectric function. The usual single delta-function GPP model has the drawback of over simplifications and for the crystals without the center of symmetry is inappropriate to describe the finite frequency behavior for dielectric function matrices. The discrete frequency summation method requires too much computation to achieve converged results since ab initio calculations of dielectric function matrices are to be carried out for many different frequencies. The two-delta GPP model is an optimization of the two approaches. We analyze the two-delta GPP model and propose a method to determine from the first principle calculations the amplitudes and effective frequencies of these delta-functions. Analytical solutions are found for the second order equations for the parameter matrices entering the model. This enables realistic applications of the method to the first principle quasiparticle calculations and makes the calculations truly adjustable parameter free.

Relevância:

30.00% 30.00%

Publicador:

Resumo:

The energetics, lattice relaxation, and the defect-induced states of st single O vacancy in alpha-Al2O3 are studied by means of supercell total-energy calculations using a first-principles method based on density-functional theory. The supercell model with 120 atoms in a hexagonal lattice is sufficiently large to give realistic results for an isolated single vacancy (square). Self-consistent calculations are performed for each assumed configuration of lattice relaxation involving the nearest-neighbor Al atoms and the next-nearest-neighbor O atoms of the vacancy site. Total-energy data thus accumulated are used to construct an energy hypersurface. A theoretical zero-temperature vacancy formation energy of 5.83 eV is obtained. Our results show a large relaxation of Al (O) atoms away from the vacancy site by about 16% (8%) of the original Al-square (O-square) distances. The relaxation of the neighboring Al atoms has a much weaker energy dependence than the O atoms. The O vacancy introduces a deep and doubly occupied defect level, or an F center in the gap, and three unoccupied defect levels near the conduction band edge, the positions of the latter are sensitive to the degree of relaxation. The defect state wave functions are found to be not so localized, but extend up to the boundary of the supercell. Defect-induced levels are also found in the valence-band region below the O 2s and the O 2p bands. Also investigated is the case of a singly occupied defect level (an F+ center). This is done by reducing both the total number of electrons in the supercell and the background positive charge by one electron in the self-consistent electronic structure calculations. The optical transitions between the occupied and excited states of the: F and F+ centers are also investigated and found to be anisotropic in agreement with optical data.

Relevância:

30.00% 30.00%

Publicador:

Resumo:

A 1.55μm InGaAsP-InP three-section DFB laser with hybrid grating is fabricated and self-pulsations (SP) with frequencies around 20GHz are observed. The mechanism of SP generation in this device is researched. Furthermore, the important role of the phase tuning section on the SP is investigated.

Relevância:

30.00% 30.00%

Publicador:

Resumo:

The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots (QDs) by molecular beam epitaxy (MBE) is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence (PL) spectra at room temperature is less than 35meV for most of the multi-layer QD samples,revealing good,reproducible MBE growth conditions. Moreover,atomic force microscopy images show that the QD surface density can be controlled in the range from 1×10^10 to 7 ×10^10 cm^-2 . The best PL properties are obtained at a QD surface density of about 4×10^10cm^-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.

Relevância:

30.00% 30.00%

Publicador:

Resumo:

A novel self-aligned coupled waveguide (SACW) multi-quantum-well (MQW) distributed Bragg reflector (DBR) laser is proposed and demonstrated for the first time. By selectively removing the MQW layer and leaving the low SCH/SACW layer the Bragg grating is partially formed on this layer. By optimizing the thickness of the low SCH/SACW layer, a ~80% coupling efficiency between the MQW gain region and the passive region are obtained. The typical threshold current of the SACW DBR laser is 39 mA, the slope efficiency can reach to 0.2 mW/mA and the output power is more than 20 mW with a more than 30dB side mode suppression ratio.