ELECTRON-STATES OF A STACKING-FAULT RIBBON IN SILICON

The electronic structure of a bounded intrinsic stacking fault in silicon is calculated. The method used is an LCAO-scheme (Linear Combinations of Atomic Orbitals) taking ten atomic orbitals of s-, p-, and d-type into account. The levels in the band gap are extracted using Lanczos' algorithm and a continued fraction representation of the local density of states. We find occupied states located up to 0.3 eV above the valence band maximum (E(v)). This significantly differs from the result obtained for the ideal infinite fault for which the interface state is located at E(v)+ 0.1 eV.

RESEARCH ON ELECTRICAL-PROPERTIES OF AMPHIPHILIC LIPID-MEMBRANES BY MEANS OF INTERDIGITAL ELECTRODES

Lipids are the main component of all cell membranes and also important mimetic materials. Moreover, it was found recently that they can be used as sensitive membranes for olfactory and taste sensors. Hence the understanding of lipid resistance is important both in sensors and in life sciences. Thirteen lipids were examined by means of interdigital electrodes with narrow gaps of 20-50 mu m, made by IC technology. The membrane lateral resistance in air, resisting electrical voltage, the influence of impurities on resistance and the resistance change in acetic acid vapour are presented for the first time. It is shown that the electrical resistivity for self-assembling lipids depends on their duration of being in an electric field and the content of the conductive impurities. The interdigital electrode is a transducer as well as a powerful tool for researching biomaterials and mimicking materials. The conducting mechanism of lipids is discussed. This method is also suitable for some polymer membranes.

与标准集成电路工艺兼容的硅基光学器件研究

着重介绍了与标准集成电路工艺兼容的硅基光学器件的最新研究进展,包括硅基光发射器、硅基光波导和调制器件、硅基光电探测器和接收机以及硅基光电子集成回路的工作原理、制作工艺和集成技术.与标准集成电路工艺兼容的硅基光电子集成回路能有效地解决电互连芯片内部串扰、带宽和能耗等问题,并能够充分利用现有成熟的集成电路工艺,实现大规模生产,具有广阔的实用前景.

GaAs/GaInNAs多量子阱谐振腔增强型长波长光探测器

报道了一种具有高速响应特性的GaAs基长波长谐振强增强型(RCE)光探测器,它采用分子束外延技术(MBE)在GaAs衬底上直接生长GaAs/AlAs布拉格反射镜(DBR)和GaInNAs/GaAs多量子阱吸收层而形成,解决了GaAs系材料只能对短波长光响应的问题,实现了GaAs基探测器对长波长光的响应.该器件在峰值响应波长1 296.5 nm处获得了17.4%的量子效率,响应谱线半宽为11 nm,零偏置时的暗电流密度8.74×10-15 A/μm~2,具有良好的暗电流特性.通过RC常数测量计算得到器件的3 dB带宽为4.82 GHz.

高饱和电流14xx nm应变量子阱激光器的研制

报道了14xx nm应变量子阱(SQW)激光器管芯的研制成果。通过金属有机化学气相沉积(MOCVD)生长工艺生长14xx nm AlGaInAs/AlInAs/InP应变量子阱外延片，采用带有锥形增益区的脊型波导结构制作激光器管芯。生长好的外延片按照双沟脊型波导激光器制备工艺进行光刻、腐蚀，制作P面电极(溅射TiPtAu)、减薄、制作N面电极(蒸发AuGeNi)，然后将试验片解理成Bar；为获得高的单面输出功率，用电子回旋共振等离子体化学气相沉积(ECR)进行腔面镀膜，HR=90%，AR=5%；解理成的管芯P面朝下烧结到铜热沉上，TO3封装后在激光器综合测试仪进行测试。管芯功率达到440 mW以上，饱和电流3 A以上，峰值波长1430 nm，远场发散角为40°×14°。

一种新型二元判定图器件和电路

提出了一种基于二元判定图(BDD)原理的新型逻辑器件和电路.BDD器件以电流模式的开关电流存储器为基本单元,具有符合二元判定图的两向通路的特点.用这种器件按照BDD树形图可以构成任意形式的组合逻辑电路.给出了或门、异或门及四位加法器电路的例子,并使用HSPICE仿真器进行了仿真,验证了这种器件及其电路的正确性.

界面态对AlGaAs/GaAs HEMT直流输出特性的影响

利用高电子迁移率晶体管(HEMT)的直流输出分析模型，首次定量地分析了界面态对AlGaAs/GaAs HEMT直流输出特性的影响。考虑界面态的作用，详细分析了不同界面态密度对HEMT的I-V特性和器件跨导的影响。研究结果表明随着界面态密度的增加，栅极电压对电流的控制能力减小，从而使器件的跨导减小。

GaAs/Al（0.33）Ga（0.67）As短周期超晶格中能带不连续性随压力的变化

于2010-11-23批量导入

Pressure behavior of deep centers in ZnSxTe1-x alloys

We have measured photoluminescence of ZnSxTe1-x alloys (x > 0.7) at 300 K and under hydrostatic pressure up to 7 GPa. The spectra contain only a broad emission band under excitation of the 406.7 nm line. Its pressure coefficients are 47, 62 and 45 meV/GPa for x = 0.98, 0.92 and 0.79 samples, which are about 26%, 7% and 38% smaller than that of the band gap in the corresponding alloys. The Stokes shifts between emission and absorption of the bands were calculated by fitting the pressure dependence of the emission intensity, being 0.29, 0.48 and 0.13 eV for the three samples, respectively. The small pressure coefficient and large Stokes shift indicate that the emission band observed in our samples may correspond to the Te isoelectronic center in the ZnSxTe1-x alloy.

一种快速宏观网络态势分析算法

为快速计算网络的宏观态势,提出了一种层次式态势量化算法,基于流量数据依次提取出服务级、节点级和网络级的流量态势量化值。该方法计算流量数据变化剧烈程度,从而反映网络的安全态势。用户可以按需要提取服务级、节点级和网络级的态势值,以此为依据辅助判断整个网络,特定节点的监控范围,或者某项服务的异常程度。该算法采用低复杂度算法,进行应用于在线态势评估。网路态势的阈值事先往往难以确定,因此网络管理员可根据网络的实际情况,选择适当的阈值。

重金属对矮小拟丽突线虫的毒性效应研究

为了探讨重金属对矮小拟丽突线虫（Acrobeloides nanus）的毒性作用，本文采用室内培养的方法，研究了不同浓度Cu、Zn、Pb、Cd对矮小拟丽突线虫死亡率、生长发育和繁殖的影响，并对线虫世代间的毒性效应进行了比较。结果表明：1）Cu、Zn、Pb、Cd对矮小拟丽突线虫24 h的半致死浓度LC50值分别为 0.80、71.20、12.94 和 1.42 mg • L-1，48 h 的半致死浓度LC50值分别为 0.71、35.08、2.65 和 0.32 mg • L-1。不同重金属离子对矮小拟丽突线虫产生的毒性具有一定的差异，24 h四种重金属离子对矮小拟丽突线虫的毒性大小依次为Cu > Cd > Pb > Zn，48 h毒性大小依次为Cd > Cu > Pb > Zn；2）与对照组相比，各暴露组当代（P0）和后代（F1）线虫平均体长均显著降低（P<0.05, P<0.01）；随着暴露浓度的增加，当代（P0）和后代（F1）线虫平均体长呈逐渐降低的趋势。生物量比体长更能敏感地反应重金属对矮小拟丽突线虫生长发育的影响，可作为重金属污染的敏感检测指标；3）供试线虫的产卵数随着Cu、Zn、Pb、Cd暴露浓度的增加而降低；其中Cu对线虫产卵数的72h-EC50、EC20和EC10值分别为1.35、0.49 和 0.2mg • L-1，Zn的72h-EC20和EC10值分别为330.29 和 163.9 mg • L-1，Pb的72h-EC20、EC10分别为17.41、4.36 mg•L-1，而Cd对线虫产卵数的72h-EC50、EC20和EC10分别为4.47、0.91 和 0.53 mg • L-1。研究结果表明，重金属Cu、Zn、Pb、Cd暴露可显著抑制矮小拟丽突线虫的生长发育和繁殖；线虫体长、产卵数表现出明显的重金属浓度依赖性。