[De la regeneración física y moral de la especie humana por el triunfo de la homeopatía] : discurso leido en la Sociedad Hahnemanniana Matritense el día 10 de abril de 1866, aniversario 111 ?del natalicio de Hahnemann /

Mode of access: Internet.

A report to the Illinois General Assembly concerning the status of Illinois utility compliance with Section 8-402.1 of the Public Utilities Act, 111. Rev. Stat. 1991, ch. 111 2/3, sec. 8-402.1.

"December 31, 1992."--Cover letter.

Home Health Agency Licensing Act (Illinois Revised Statutes, Chapter 111 1/2 paragraph 2801 et seq.) and Illinois home health agency code (77 Illinois Administrative Code 245).

Cover title: Home health agencies rules & regulations.

Illinois Clinical Laboratory Act (Ill. Rev. Stat., ch. 111 1/2, par. 621-101 et seq.) [and] Illinois clinical laboratory code (77 Ill. Adm. Code 450).

"Effective July 1, 1989."

Minimum sanitary requirements for the design and operation of swimming pools and bathing beaches : prescribed under the Swimming Pool and Bathing Beach Act, Chapter 111 1/2, Paragraphs 1201-1227 inclusive.

Mode of access: Internet.

Private employment agencies act : rules and regulations (Ill. Rev. Stat. Ch. 111, Sec. 901-918)

Includes Rules and regulations relating to the operation of private employment agencies.

Ad Finnum Johannæum epistola de chronologia Gunnlaugssagæ, ad Hist. Eccles. Island, tom. iv. p. 358-68, & Vitam Gunnlaugi Ormstungæ not. 82, 101, & 111.

Mode of access: Internet.

Investigation of Communist infiltration of UERMWA. Hearings before a special subcommittee of the Committee on Education and Labor, House of Representatives, Eightieth Congress, second session, pursuant to H. Res. 111.

Hearings held at Washington, Sept.2-29; Schenectady, Sept.30 and Oct.1, and at New York, Oct.6, 1948.

Operator and organizational maintenance manual : information and coordination central, guided missile system AN/MSQ-110 (U.S. Army), NSN 1430-01-042-4918, AN/MSQ-111 (USMC), NSN 1430-01-042-4917 and platoon command post, guided missile AN/MSW-13 (U.S. Army), NSN 1430-01-042-4915, AN/MSW-14 (USMC), NSN 1430-01-042-4916 : HAWK air defense guided missile system.

Includes index.

Electronic properties of homoepitaxial (111) highly boron-doped diamond films

The use of diamond as a semiconductor for the realization of transistor structures, which can operate at high temperatures (>700 K), is of increasing interest. In terms of bipolar devices, the growth of n-type phosphorus doped diamond is more efficient on the (111) growth plane; p-type boron-doped diamond growth has been most usually grown in the (100) direction and, hence, this study into the electronic properties, at high temperatures, of boron-doped diamond (111) homoepitaxial layers. It is shown that highly doped layers (hole carrier concentrations as high as 2×1020 cm-3) can be produced without promoting the onset of (unwanted) hopping conduction. The persistence of valance-band conduction in these films enables relatively high mobility values to be measured ( ~ 20 cm2/V?s) and, intriguingly, these values are not significantly reduced at high temperatures. The layers also display very low compensation levels, a fact that may explain the high mobility values since compensation is required for hopping conduction. The results are discussed in terms of the potential of these types of layers for use with high temperature compatible diamond transistors.