1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors

A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced (RCE) photodetector operating at 1.3 mum with the full-width at half-maximum of 5.5 nm was demonstrated. The GaInNAs RCE photodetector was grown by molecular-beam epitaxy using an ion-removed dc-plasma cell as nitrogen source. GaInNAs/GaAs MQW shows a strong exciton peak at room temperature that is very beneficial for applications in long-wavelength absorption devices. For a 100-mum diameter RCE photodetector, the dark current is 20 and 32 pA at biases of 0 and 6 V, respectively, and the breakdown voltage is -18 V. The measured 3-dB bandwidth is 308 MHz. The reasons resulting in the poor high speed property were analyzed. The tunable wavelength of 18 nm with the angle of incident light was observed.

Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy

1.3 mum wavelength In(Ga)As/GaAs nanometer scale islands grown by molecular beam epitaxy (MBE) were characterized by photoluminescence (PL) and atomic force microscopy (AFM) measurements. It is shown that inhomogeneous broadening of optical emission due to fluctuation of the In0.5Ga0.5As islands both in size and in compositions can be effectively suppressed by introducing a AlAs layer and a strain reduction In0.2Ga0.8As layer overgrown on top of the islands, 1.3mum emission wavelength with narrower line-width less than 20meV at room temperature was obtained.

Normal-incident SiGe/Si MQWs photodetectors operating at 1.3 mu m

A normal-incident SiGe/Si multiple quantum wells (MQWs) photodetector was reported. The structure and fabrication process of the photodetector were introduced. The photocurrent spectra measurement showed that the response spectra was expanded to 1.3 mu m wavelength. The quantum efficiency of the photodetector was 0.1% at 1.3 mu m and 20% at 0.95 mu m.

1.3 mu m InGaAsP/InP strained layer multi-quantum-well complex-coupled distributed feedback laser

1.3 mu m strained-layer multi-quantum wells complex-coupled distributed feedback lasers with a wide temperature range of 20 to 100 degrees C are reported. The low threshold current of 10mA and high single-facet slope efficiency of 0.3mW/mA were obtained for an as cleaved device. The single mode yield was as high as 80%.

Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE

Surface morphology and optical properties of 1.3 mum self-organized InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy have been investigated by atomic force microscopy and photoluminescence measurements. It has been shown that the surface morphology evolution and emission wavelengths of InGaAs/GaAs QDs can be controlled effectively via cycled monolayer deposition methods due to the reduction of the surface strain. Our results provide important information for optimizing the epitaxial parameters for obtaining 1.3 mum long wavelength emission quantum dots structures. (C) 2002 Elsevier Science B.V. All rights reserved.

Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure

Microphotoluminescence (mu-PL) investigation has been performed at room temperature on InAs quantum dot (QD) vertical cavity surface emitting laser (VCSEL) structure in order to characterize the QD epitaxial structure which was designed for 1.3 mu m wave band emission. Actual and precise QD emission spectra including distinct ground state (GS) and excited state (ES) transition peaks are obtained by an edge-excitation and edge-emission (EEEE) mu-PL configuration. Conventional photoluminescence methods for QD-VCSELs structure analysis are compared and discussed, which indicate the EEEE mu-PL is a useful tool to determine the optical features of the QD active region in an as-grown VCSEL structure. Some experimental results have been compared with simulation results obtained with the aid of the plane-wave admittance method. After adjustment of epitaxial growth according to EEEE mu-PL measurement results, QD-VCSEL structure wafer with QD GS transition wavelength of 1300 nm and lasing wavelength of 1301 nm was obtained.

用1-苯基-3-甲基-4-苯甲酰基-5-吡唑啉酮萃取~(46)Sc的研究

用1-苯基-3-甲基-4-苯甲酰基-5-吡唑啉酮(PMBP)做萃取剂,氯仿和环己烷为稀释剂,观察了在HCl溶液46Sc的溶剂萃取行为。实验结果表明,从10-3~10-2mol/L的HCl溶液中用PMBP-氯仿(或环己烷)能有效地萃取46Sc,萃取率可达95%以上。另外,对PMBP从HCl溶液中萃取46Sc和234Th的结果也做了比较,结果表明,通过控制水溶液中HCl的浓度,能实现234Th与46Sc的分离。

1-苯基-3-甲基-4-苯甲酰基-5-吡唑啉酮和磷酸三丁脂协同萃取镭的研究

用1-苯基-3-甲基-4-苯甲酰基-5-吡唑啉酮(PMBP)为萃取剂,苯为稀释剂,从pH5的水相中萃取船224Ra,发现224Ra的萃取效率非常低。若往PMBP中加入少量的磷酸三丁脂(TBP),则会极大地提高镭的萃取效率,这说明TBP对PMBP萃取镭有显著的协同萃取效应。完成了萃取时间和反萃时间对224Ra萃取效率的影响以及224Ra萃取效率与TBP量之间的依赖关系等条件实验。