Inorganic Photovoltaics - Planar and Nanostructured Devices

Since its invention in the 1950s, semiconductor solar cell technology has evolved in great leaps and bounds. Solar power is now being considered as a serious leading contender for replacing fossil fuel based power generation. This article reviews the evolution and current state, and potential areas of near future research focus, of leading inorganic materials based solar cells, including bulk crystalline, amorphous thin-films, and nanomaterials based solar cells. Bulk crystalline silicon solar cells continue to dominate the solar power market, and continued efforts at device fabrication improvements, and device topology advancements are discussed. III-V compound semiconductor materials on c-Si for solar power generation are also reviewed. Developments in thin-film based solar cells are reviewed, with a focus on amorphous silicon, copper zinc tin sulfide, cadmium telluride, as well as nanostructured Cadmium telluride. Recent developments in the use of nano-materials for solar power generation, including silicon and gallium arsenide nanowires, are also reviewed.

Quadruple-junction inverted metamorphic concentrator devices

We present results for quadruple-junction inverted metamorphic (4J-IMM) devices under the concentrated direct spectrum and analyze the present limitations to performance. The devices integrate lattice-matched subcells with rear heterojunctions, as well as lattice-mismatched subcells with low threading dislocation density. To interconnect the subcells, thermally stable lattice-matched tunnel junctions are used, as well as a metamorphic GaAsSb/GaInAs tunnel junction between the lattice-mismatched subcells. A broadband antireflection coating is used, as well as a front metal grid designed for high concentration operation. The best device has a peak efficiency of (43.8 ± 2.2)% at 327-sun concentration, as measured with a spectrally adjustable flash simulator, and maintains an efficiency of (42.9 ± 2.1)% at 869 suns, which is the highest concentration measured. The V_oc increases from 3.445 V at 1-sun to 4.10 V at 327-sun concentration, which indicates high material quality in all of the subcells. The subcell voltages are analyzed using optical modeling, and the present device limitations and pathways to improvement are discussed. Although further improvements are possible, the 4J-IMM structure is clearly capable of very high efficiency at concentration, despite the complications arising from utilizing lattice-mismatched subcells.

Interrogating Capabilities of IoT Devices

This research is supported by the UK Research Councils’ Digital Economy IT as a Utility Network+ (EP/K003569/1) and the dot.rural Digital Economy Hub (EP/G066051/1).

Interrogating Capabilities of IoT Devices

This research is supported by the UK Research Councils’ Digital Economy IT as a Utility Network+ (EP/K003569/1) and the dot.rural Digital Economy Hub (EP/G066051/1).

Trusted Tiny Things : Making Devices in Smart Cities More Transparent

Postprint

A link between protein structure and enzyme catalyzed hydrogen tunneling

We present evidence that the size of an active site side chain may modulate the degree of hydrogen tunneling in an enzyme-catalyzed reaction. Primary and secondary kH/kT and kD/kT kinetic isotope effects have been measured for the oxidation of benzyl alcohol catalyzed by horse liver alcohol dehydrogenase at 25°C. As reported in earlier studies, the relationship between secondary kH/kT and kD/kT isotope effects provides a sensitive probe for deviations from classical behavior. In the present work, catalytic efficiency and the extent of hydrogen tunneling have been correlated for the alcohol dehydrogenase-catalyzed hydride transfer among a group of site-directed mutants at position 203. Val-203 interacts with the opposite face of the cofactor NAD+ from the alcohol substrate. The reduction in size of this residue is correlated with diminished tunneling and a two orders of magnitude decrease in catalytic efficiency. Comparison of the x-ray crystal structures of a ternary complex of a high-tunneling (Phe-93 → Trp) and a low-tunneling (Val-203 → Ala) mutant provides a structural basis for the observed effects, demonstrating an increase in the hydrogen transfer distance for the low-tunneling mutant. The Val-203 → Ala ternary complex crystal structure also shows a hyperclosed interdomain geometry relative to the wild-type and the Phe-93 → Trp mutant ternary complex structures. This demonstrates a flexibility in interdomain movement that could potentially narrow the distance between the donor and acceptor carbons in the native enzyme and may enhance the role of tunneling in the hydride transfer reaction.

Electron tunneling in protein crystals

The current understanding of electron tunneling through proteins has come from work on systems where donors and acceptors are held at fixed distances and orientations. The factors that control electron flow between proteins are less well understood, owing to uncertainties in the relative orientations and structures of the reactants during the very short time that tunneling occurs. As we report here, the way around such structural ambiguity is to examine oxidation–reduction reactions in protein crystals. Accordingly, we have measured and analyzed the kinetics of electron transfer between native and Zn-substituted tuna cytochrome c (cyt c) molecules in crystals of known structure. Electron transfer rates [(320 s−1 for *Zn-cyt c → Fe(III)-cyt c; 2000 s−1 for Fe(II)-cyt c → Zn-cyt c+)] over a Zn–Fe distance of 24.1 Å closely match those for intraprotein electron tunneling over similar donor–acceptor separations. Our results indicate that van der Waals interactions and water-mediated hydrogen bonds are effective coupling elements for tunneling across a protein–protein interface.

Resonant tectorial membrane motion in the inner ear: its crucial role in frequency tuning.

The tectorial membrane has long been postulated as playing a role in the exquisite sensitivity of the cochlea. In particular, it has been proposed that the tectorial membrane provides a second resonant system, in addition to that of the basilar membrane, which contributes to the amplification of the motion of the cochlear partition. Until now, technical difficulties had prevented vibration measurements of the tectorial membrane and, therefore, precluded direct evidence of a mechanical resonance. In the study reported here, the vibration of the tectorial membrane was measured in two orthogonal directions by using a novel method of combining laser interferometry with a photodiode technique. It is shown experimentally that the motion of the tectorial membrane is resonant at a frequency of 0.5 octave (oct) below the resonant frequency of the basilar membrane and polarized parallel to the reticular lamina. It is concluded that the resonant motion of the tectorial membrane is due to a parallel resonance between the mass of the tectorial membrane and the compliance of the stereocilia of the outer hair cells. Moreover, in combination with the contractile force of outer hair cells, it is proposed that inertial motion of the tectorial membrane provides the necessary conditions to allow positive feedback of mechanical energy into the cochlear partition, thereby amplifying and tuning the cochlear response.

Innovative analytical strategies for the development of sensor devices and mass spectrometry methods

Il lavoro presentato in questa tesi di Dottorato è incentrato sullo sviluppo di strategie analitiche innovative basate sulla sensoristica e su tecniche di spettrometria di massa in ambito biologico e della sicurezza alimentare. Il primo capitolo tratta lo studio di aspetti metodologici ed applicativi di procedure sensoristiche per l’identificazione e la determinazione di biomarkers associati alla malattia celiaca. In tale ambito, sono stati sviluppati due immunosensori, uno a trasduzione piezoelettrica e uno a trasduzione amperometrica, per la rivelazione di anticorpi anti-transglutaminasi tissutale associati a questa malattia. L’innovazione di questi dispositivi riguarda l’immobilizzazione dell’enzima tTG nella conformazione aperta (Open-tTG), che è stato dimostrato essere quella principalmente coinvolta nella patogenesi. Sulla base dei risultati ottenuti, entrambi i sistemi sviluppati si sono dimostrati una valida alternativa ai test di screening attualmente in uso per la diagnosi della celiachia. Rimanendo sempre nel contesto della malattia celiaca, ulteriore ricerca oggetto di questa tesi di Dottorato, ha riguardato lo sviluppo di metodi affidabili per il controllo di prodotti “gluten-free”. Il secondo capitolo tratta lo sviluppo di un metodo di spettrometria di massa e di un immunosensore competitivo per la rivelazione di prolammine in alimenti “gluten-free”. E’ stato sviluppato un metodo LC-ESI-MS/MS basato su un’analisi target con modalità di acquisizione del segnale selected reaction monitoring per l’identificazione di glutine in diversi cereali potenzialmente tossici per i celiaci. Inoltre ci si è focalizzati su un immunosensore competitivo per la rivelazione di gliadina, come metodo di screening rapido di farine. Entrambi i sistemi sono stati ottimizzati impiegando miscele di farina di riso addizionata di gliadina, avenine, ordeine e secaline nel caso del sistema LC-MS/MS e con sola gliadina nel caso del sensore. Infine i sistemi analitici sono stati validati analizzando sia materie prime (farine) che alimenti (biscotti, pasta, pane, etc.). L’approccio sviluppato in spettrometria di massa apre la strada alla possibilità di sviluppare un test di screening multiplo per la valutazione della sicurezza di prodotti dichiarati “gluten-free”, mentre ulteriori studi dovranno essere svolti per ricercare condizioni di estrazione compatibili con l’immunosaggio competitivo, per ora applicabile solo all’analisi di farine estratte con etanolo. Terzo capitolo di questa tesi riguarda lo sviluppo di nuovi metodi per la rivelazione di HPV, Chlamydia e Gonorrhoeae in fluidi biologici. Si è scelto un substrato costituito da strips di carta in quanto possono costituire una valida piattaforma di rivelazione, offrendo vantaggi grazie al basso costo, alla possibilità di generare dispositivi portatili e di poter visualizzare il risultato visivamente senza la necessità di strumentazioni. La metodologia sviluppata è molto semplice, non prevede l’uso di strumentazione complessa e si basa sull’uso della isothermal rolling-circle amplification per l’amplificazione del target. Inoltre, di fondamentale importanza, è l’utilizzo di nanoparticelle colorate che, essendo state funzionalizzate con una sequenza di DNA complementare al target amplificato derivante dalla RCA, ne permettono la rivelazione a occhio nudo mediante l’uso di filtri di carta. Queste strips sono state testate su campioni reali permettendo una discriminazione tra campioni positivi e negativi in tempi rapidi (10-15 minuti), aprendo una nuova via verso nuovi test altamente competitivi con quelli attualmente sul mercato.

Calix[6]arene Derivatives as Pivotal Components of Working Devices and Molecular Machine Prototypes

This Ph.D. thesis describes the synthesis, characterization and study of calix[6]arene derivatives as pivotal components for the construction of molecular machine prototypes. Initially, the ability of a calix[6]arene wheel to supramolecularly assist and increase the rate of a nucleophilic substitution reaction was exploited for the synthesis of two constitutionally isomeric oriented rotaxanes. Then, the synthesis and characterization of several hetero-functionalised calix[6]arene derivatives and the possibility to obtain molecular muscle prototypes was reported. The ability of calix[6]arenes to form oriented pseudorotaxane towards dialkyl viologen axles was then exploited for the synthesis of two calixarene-based [2]catenanes. As last part of this thesis, studies on the electrochemical response of the threading-dethreading process of calix[6]arene-based pseudorotaxanes and rotaxanes supported on glassy carbon electrodes are reported.

Resonant elements contactless coupled to bolometric micro-stripes

One of the main technical difficulties in the fabrication of optical antennas working as light detectors is the proper design and manufacture of auxiliary elements as load lines and signal extraction structures. These elements need to be quite small to reach the location of the antennas and should have a minimal effect on the response of the device. Unfortunately this is not an easy task and signal extraction lines resonate along with the antenna producing a complex signal that usually masks the one given by the antenna. In order to decouple the resonance from the transduction we present in this contribution a parametric analysis of the response of a bolometric stripe that is surrounded by resonant dipoles with different geometries and orientations. We have checked that these elements should provide a signal proportional to the polarization state of the incoming light.

Oxide Semiconductors For Organic Opto-electronic Devices

Development of transparent oxide semiconductors (TOS) from Earth-abundant materials is of great interest for cost-effective thin film device applications, such as solar cells, light emitting diodes (LEDs), touch-sensitive displays, electronic paper, and transparent thin film transistors. The need of inexpensive or high performance electrode might be even greater for organic photovoltaic (OPV), with the goal to harvest renewable energy with inexpensive, lightweight, and cost competitive materials. The natural abundance of zinc and the wide bandgap ($sim$3.3 eV) of its oxide make it an ideal candidate. In this dissertation, I have introduced various concepts on the modulations of various surface, interface and bulk opto-electronic properties of ZnO based semiconductor for charge transport, charge selectivity and optimal device performance. I have categorized transparent semiconductors into two sub groups depending upon their role in a device. Electrodes, usually 200 to 500 nm thick, optimized for good transparency and transporting the charges to the external circuit. Here, the electrical conductivity in parallel direction to thin film, i.e bulk conductivity is important. And contacts, usually 5 to 50 nm thick, are optimized in case of solar cells for providing charge selectivity and asymmetry to manipulate the built in field inside the device for charge separation and collection. Whereas in Organic LEDs (OLEDs), contacts provide optimum energy level alignment at organic oxide interface for improved charge injections. For an optimal solar cell performance, transparent electrodes are designed with maximum transparency in the region of interest to maximize the light to pass through to the absorber layer for photo-generation, plus they are designed for minimum sheet resistance for efficient charge collection and transport. As such there is need for material with high conductivity and transparency. Doping ZnO with some common elements such as B, Al, Ga, In, Ge, Si, and F result in n-type doping with increase in carriers resulting in high conductivity electrode, with better or comparable opto-electronic properties compared to current industry-standard indium tin oxide (ITO). Furthermore, improvement in mobility due to improvement on crystallographic structure also provide alternative path for high conductivity ZnO TCOs. Implementing these two aspects, various studies were done on gallium doped zinc oxide (GZO) transparent electrode, a very promising indium free electrode. The dynamics of the superimposed RF and DC power sputtering was utilized to improve the microstructure during the thin films growth, resulting in GZO electrode with conductivity greater than 4000 S/cm and transparency greater than 90 %. Similarly, various studies on research and development of Indium Zinc Tin Oxide and Indium Zinc Oxide thin films which can be applied to flexible substrates for next generation solar cells application is presented. In these new TCO systems, understanding the role of crystallographic structure ranging from poly-crystalline to amorphous phase and the influence on the charge transport and optical transparency as well as important surface passivation and surface charge transport properties. Implementation of these electrode based on ZnO on opto-electronics devices such as OLED and OPV is complicated due to chemical interaction over time with the organic layer or with ambient. The problem of inefficient charge collection/injection due to poor understanding of interface and/or bulk property of oxide electrode exists at several oxide-organic interfaces. The surface conductivity, the work function, the formation of dipoles and the band-bending at the interfacial sites can positively or negatively impact the device performance. Detailed characterization of the surface composition both before and after various chemicals treatment of various oxide electrode can therefore provide insight into optimization of device performance. Some of the work related to controlling the interfacial chemistry associated with charge transport of transparent electrodes are discussed. Thus, the role of various pre-treatment on poly-crystalline GZO electrode and amorphous indium zinc oxide (IZO) electrode is compared and contrasted. From the study, we have found that removal of defects and self passivating defects caused by accumulation of hydroxides in the surface of both poly-crystalline GZO and amorphous IZO, are critical for improving the surface conductivity and charge transport. Further insight on how these insulating and self-passivating defects cause charge accumulation and recombination in an device is discussed. With recent rapid development of bulk-heterojunction organic photovoltaics active materials, devices employing ZnO and ZnO based electrode provide air stable and cost-competitive alternatives to traditional inorganic photovoltaics. The organic light emitting diodes (OLEDs) have already been commercialized, thus to follow in the footsteps of this technology, OPV devices need further improvement in power conversion efficiency and stable materials resulting in long device lifetimes. Use of low work function metals such as Ca/Al in standard geometry do provide good electrode for electron collection, but serious problems using low work-function metal electrodes originates from the formation of non-conductive metal oxide due to oxidation resulting in rapid device failure. Hence, using low work-function, air stable, conductive metal oxides such as ZnO as electrons collecting electrode and high work-function, air stable metals such as silver for harvesting holes, has been on the rise. Devices with degenerately doped ZnO functioning as transparent conductive electrode, or as charge selective layer in a polymer/fullerene based heterojunction, present useful device structures for investigating the functional mechanisms within OPV devices and a possible pathway towards improved air-stable high efficiency devices. Furthermore, analysis of the physical properties of the ZnO layers with varying thickness, crystallographic structure, surface chemistry and grain size deposited via various techniques such as atomic layer deposition, sputtering and solution-processed ZnO with their respective OPV device performance is discussed. We find similarity and differences in electrode property for good charge injection in OLEDs and good charge collection in OPV devices very insightful in understanding physics behind device failures and successes. In general, self-passivating surface of amorphous TCOs IZO, ZTO and IZTO forms insulating layer that hinders the charge collection. Similarly, we find modulation of the carrier concentration and the mobility in electron transport layer, namely zinc oxide thin films, very important for optimizing device performance.

Estudo de transistores de tunelamento induzido por efeito de campo (TFET) construídos em nanofio.

Esse trabalho de mestrado teve como estudo o transistor Túnel-FET (TFET) fabricado em estrutura de nanofio de silício. Este estudo foi feito de forma teórica (simulação numérica) e experimental. Foram estudadas as principais características digitais e analógicas do dispositivo e seu potencial para uso em circuitos integrados avançados para a próxima década. A análise foi feita através da extração experimental e estudo dos principais parâmetros do dispositivo, tais como inclinação de sublimiar, transcondutância (gm), condutância de saída (gd), ganho intrínseco de tensão (AV) e eficiência do transistor. As medidas experimentais foram comparadas com os resultados obtidos pela simulação. Através do uso de diferentes parâmetros de ajuste e modelos de simulação, justificou-se o comportamento do dispositivo observado experimentalmente. Durante a execução deste trabalho estudou-se a influência da escolha do material de fonte no desempenho do dispositivo, bem como o impacto do diâmetro do nanofio nos principais parâmetros analógicos do transistor. Os dispositivos compostos por fonte de SiGe apresentaram valores maiores de gm e gd do que aqueles compostos por fonte de silício. A diferença percentual entre os valores de transcondutância para os diferentes materiais de fonte variou de 43% a 96%, sendo dependente do método utilizado para comparação, e a diferença percentual entre os valores de condutância de saída variou de 38% a 91%. Observou-se também uma degradação no valor de AV com a redução do diâmetro do nanofio. O ganho calculado a partir das medidas experimentais para o dispositivo com diâmetro de 50 nm é aproximadamente 45% menor do que o correspondente ao diâmetro de 110 nm. Adicionalmente estudou-se o impacto do diâmetro considerando diferentes polarizações de porta (VG) e concluiu-se que os TFETs apresentam melhor desempenho para baixos valores de VG (houve uma redução de aproximadamente 88% no valor de AV com o aumento da tensão de porta de 1,25 V para 1,9 V). A sobreposição entre porta e fonte e o perfil de dopantes na junção de tunelamento também foram analisados a fim de compreender qual combinação dessas características resultariam em um melhor desempenho do dispositivo. Observou-se que os melhores resultados estavam associados a um alinhamento entre o eletrodo de porta e a junção entre fonte e canal e a um perfil abrupto de dopantes na junção. Por fim comparou-se a tecnologia MOS com o TFET, obtendo-se como resultado um maior valor de AV (maior do que 40 dB) para o TFET.

Caracterização elétrica de túnel-FET em estrutura de nanofio com fontes de SiGe e Ge em função da temperatura.

Este trabalho teve como objetivo estudar os transistores de tunelamento por efeito de campo em estruturas de nanofio (NW-TFET), sendo realizado através de analises com base em explicações teóricas, simulações numéricas e medidas experimentais. A fim de avaliar melhorar o desempenho do NW-TFET, este trabalho utilizou dispositivos com diferentes materiais de fonte, sendo eles: Si, liga SiGe e Ge, além da variação da espessura de HfO2 no material do dielétrico de porta. Com o auxílio de simulações numéricas foram obtidos os diagramas de bandas de energia dos dispositivos NW-TFET com fonte de Si0,73Ge0,27 e foi analisada a influência de cada um dos mecanismos de transporte de portadores para diversas condições de polarização, sendo observado a predominância da influência da recombinação e geração Shockley-Read-Hall (SRH) na corrente de desligamento, do tunelamento induzido por armadilhas (TAT) para baixos valores de tensões de porta (0,5V > VGS > 1,5V) e do tunelamento direto de banda para banda (BTBT) para maiores valores tensões de porta (VGS > 1,5V). A predominância de cada um desses mecanismos de transporte foi posteriormente comprovada com a utilização do método de Arrhenius, sendo este método adotado em todas as análises do trabalho. O comportamento relativamente constante da corrente dos NW-TFETs com a temperatura na região de BTBT tem chamado a atenção e por isso foi realizado o estudo dos parâmetros analógicos em função da temperatura. Este estudo foi realizado comparando a influência dos diferentes materiais de fonte. O uso de Ge na fonte, permitiu a melhora na corrente de tunelamento, devido à sua menor banda proibida, aumentando a corrente de funcionamento (ION) e a transcondutância do dispositivo. Porém, devido à forte dependência de BTBT com o campo elétrico, o uso de Ge na fonte resulta em uma maior degradação da condutância de saída. Entretanto, a redução da espessura de HfO2 no dielétrico de porta resultou no melhor acoplamento eletrostático, também aumentando a corrente de tunelamento, fazendo com que o dispositivo com fonte Ge e menor HfO2 apresentasse melhores resultados analógicos quando comparado ao puramente de Si. O uso de diferentes materiais durante o processo de fabricação induz ao aumento de defeitos nas interfaces do dispositivo. Ao longo deste trabalho foi realizado o estudo da influência da densidade de armadilhas de interface na corrente do dispositivo, demonstrando uma relação direta com o TAT e a formação de uma região de platô nas curvas de IDS x VGS, além de uma forte dependência com a temperatura, aumentando a degradação da corrente para temperaturas mais altas. Além disso, o uso de Ge introduziu maior número de impurezas no óxido, e através do estudo de ruído foi observado que o aumento na densidade de armadilhas no óxido resultou no aumento do ruído flicker em baixa frequência, que para o TFET, ocorre devido ao armadilhamento e desarmadilhamento de elétrons na região do óxido. E mais uma vez, o melhor acoplamento eletrostático devido a redução da espessura de HfO2, resultou na redução desse ruído tornando-se melhor quando comparado à um TFET puramente de Si. Neste trabalho foi proposto um modelo de ruído em baixa frequência para o NW-TFET baseado no modelo para MOSFET. Foram realizadas apenas algumas modificações, e assim, obtendo uma boa concordância com os resultados experimentais na região onde o BTBT é o mecanismo de condução predominante.