Gerardi Joannis Vossii rhetorices contractae sive partitionum oratoriarum : libri quinque : editio juxta exemplar lipsiense quantum fieri potuit diligentissime correcta, & duplice indice locupletataed.juxta exemplar lipsiense quantum fieri potuit diligentissime correcta, & duplice indice locupletata

Gerardus Johannes Vossius, filólogo e erudito holandês, nasceu em Heidelberg em 1577 e morreu em Amsterdã em 1649. Em 1632, transferiu-se para Amsterdã onde ensinou história no então fundado Athenaeum. Suas obras mais notáveis são sobre as heresias dos historiadores antigos. ‘Rethorices contractae’ é uma obra produzida em 1606, que contém regras sobre retorica e oratória. Formada por cindo livros ou partes o autor apresenta a natureza, o gênero e os tipos de retórica, o uso de figuras de linguagens e o estilo dos discursos para emprego nas diversas situações. No final do livro, encontra-se o índice remissivo de assuntos.

Transport Phenomena in Ammonothermal Growth of Gallium Nitride

GaN can be used to fabricate blue/green/UV LEDs and high temperature, high power electronic devices. Ideal substrates are needed for high quality III-nitride epitaxy, which is an essential step for the manufacture of LEDs. GaN substrates are ideal to be lattice matched and isomorphic to nitride-based films. Bulk single crystals of GaN can be grown from supercritical fluids using the ammonothermal method, which utilizes ammonia as fluid rather than water as in the hydrothermal process. In this process, a mineralizer such as amide, imide or azide is used to attack a bulk nitride feedstock at temperatures from 200 - 500癈 and pressures from 1 - 4 kbar. Baffle design is essential for successful growth of GaN crystals. Baffle is used to separate the dissolving zone from the growth zone, and to maintain a temperature difference between the two zones. For solubility curve with a positive coefficient with respect to temperature, the growth zone is maintained at a lower temperature than that in the dissolving zone, thus the nutrient becomes supersaturated in the growth zone. The baffle opening is used to control the mixing of nutrients in the two zones, thus the transfer of nutrient from the lower part to the upper part. Ammonothermal systems have been modeled here using fluid dynamics, thermodynamics and heat transfer models. The nutrient is considered as a porous media bed and the flow is simulated using the Darcy-Brinkman-Forchheimer model. The resulting governing equations are solved using the finite volume method. We investigated the effects of baffle opening and position on the transport phenomena of nutrient from dissolving zone to the growth zone. Simulation data have been compared qualitatively with experimental data.

Quantum simulations of relativistic quantum physics in circuit QED

We present a scheme for simulating relativistic quantum physics in circuit quantum electrodynamics. By using three classical microwave drives, we show that a superconducting qubit strongly coupled to a resonator field mode can be used to simulate the dynamics of the Dirac equation and Klein paradox in all regimes. Using the same setup we also propose the implementation of the Foldy-Wouthuysen canonical transformation, after which the time derivative of the position operator becomes a constant of the motion.

From transistor to trapped-ion computers for quantum chemistry

Over the last few decades, quantum chemistry has progressed through the development of computational methods based on modern digital computers. However, these methods can hardly fulfill the exponentially-growing resource requirements when applied to large quantum systems. As pointed out by Feynman, this restriction is intrinsic to all computational models based on classical physics. Recently, the rapid advancement of trapped-ion technologies has opened new possibilities for quantum control and quantum simulations. Here, we present an efficient toolkit that exploits both the internal and motional degrees of freedom of trapped ions for solving problems in quantum chemistry, including molecular electronic structure, molecular dynamics, and vibronic coupling. We focus on applications that go beyond the capacity of classical computers, but may be realizable on state-of-the-art trapped-ion systems. These results allow us to envision a new paradigm of quantum chemistry that shifts from the current transistor to a near-future trapped-ion-based technology.

Pumped double quantum dot with spin-orbit coupling

We study driven by an external electric field quantum orbital and spin dynamics of electron in a one-dimensional double quantum dot with spin-orbit coupling. Two types of external perturbation are considered: a periodic field at the Zeeman frequency and a single half-period pulse. Spin-orbit coupling leads to a nontrivial evolution in the spin and orbital channels and to a strongly spin-dependent probability density distribution. Both the interdot tunneling and the driven motion contribute into the spin evolution. These results can be important for the design of the spin manipulation schemes in semiconductor nanostructures.

Optimally robust shortcuts to population inversion in two-level quantum systems

19 p.