949 resultados para pulse-width modulator


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Colliding pulse mode-locking is demonstrated for the first time in quantum-dot lasers. Close to transform limited, 7ps, 20GHz pulses are achieved using an absorber length considerably longer than typically used in similar quantum-well lasers. © 2004 Optical Society of America.

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This paper reviews simulations of integrated components for ultra-short pulse generation and shaping. Optimised component designs are reported, minimising the major impact that chirp and saturation effects have, even where ultra-fast nonlinearities are used. © 2005 OSA/IPRA.

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The signals of dolphins and porpoises often exhibit a multi-pulse structure. Here, echolocation signal recordings were made from four geometrically distinct positions of seven Yangtze finless porpoises temporarily housed in a relatively small, enclosed area. Some clicks demonstrated double-pulse, and others multi-pulse, structure. The interpulse intervals between the first and second pulse of the double- and multi-pulse clicks were significantly different among data from the four different positions (p < 0.01, one-way ANOVA). These results indicate that the interpulse interval and structure of the double- and multi-pulse echolocation signals depend on the hydrophone geometry of the animal, and that the double- and multi-pulse structure of echolocation signals in Yangtze finless porpoise is not caused by the phonating porpoise itself, but by the multipath propagation of the signal. Time delays in the 180 degrees phase-shifted surface reflection pulse and the nonphase-shifted bottom reflection pulse of the multi-pulse structures, relative to the direct signal, can be used to calculate the distance to a phonating animal. (c) 2005 Acoustical Society of America.

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This paper describes the high-frequency echolocation signals from free-ranging Yangtze finless porpoise in the Tian-e-zhou Baiji National Natural Reserve in Hubei Province, China. Signal analysis showed that the Yangtze finless porpoise clicks are typical high-frequency narrow-band (relative width of the frequency spectrum Q=6.6 &PLUSMN; 1.56, N=548) ultrasonic pulses. The peak frequencies of the typical clicks range from 87 to 145 kHz with an average of 125 &PLUSMN; 6.92 kHz. The durations range from 30 to 122 μ s with an average of 68 &PLUSMN; 14.12 μ s. The characteristics of the signals are similar to those of other members of the Phocoenidae as well as the distantly related delphinids, Cephalorhynchus spp. Comparison of these signals to those of the baiji (Lipotes vexillifer), who occupies habitat similar to that of the Yangtze finless porpoise, showed that the peak frequencies of clicks produced by the Yangtze finless porpoise are remarkably higher than those produced by the baiji. Difference in peak frequency between the two species is probably linked to the different size of prefer-red prey fish. Clear double-pulse and multi-pulse reverberation structures of clicks are noticed, and there is no indication of any low-frequency (< 70 kHz) components during the recording period. © 2005 Acoustical Society of America.

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The off-axis sonar beam patterns of eight free-ranging finless porpoises were measured using attached data logger systems. The transmitted sound pressure level at each beam angle was calculated from the animal's body angle, the water surface echo level, and the swimming depth. The beam pattern of the off-axis signals between 45 and 115 (where 0 corresponds to the on-axis direction) was nearly constant. The sound pressure level of the off-axis signals reached 162 dB re 1 mPa peak-to-peak. The surface echo level received at the animal was over 140 dB, much higher than the auditory threshold level of small odontocetes. Finless porpoises are estimated to be able to receive the surface echoes of off-axis signals even at 50-m depth. Shallow water systems (less than 50-m depth) are the dominant habitat of both oceanic and freshwater populations of this species. Surface echoes may provide porpoises not only with diving depth information but also with information about surface direction and location of obstacles (including prey items) outside the on-axis sector of the sonar beam. 2005 Acoustical Society of America.

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The integration of quantum cascade lasers with devices capable of efficiently manipulating terahertz light represents a fundamental step for many different applications. Split-ring resonators, subwavelength metamaterial elements exhibiting broad resonances that are easily tuned lithographically, represent the ideal route to achieve such optical control of the incident light. We have realized a design based on the interplay between metallic split rings and the electronic properties of a graphene monolayer integrated into a single device. By acting on the doping level of graphene, an active modulation of the optical intensity was achieved in the frequency range between 2.2 and 3.1 THz, with a maximum modulation depth of 18%. © 2014 Society of Photo-Optical Instrumentation Engineers.

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The integration of quantum cascade lasers with devices capable of efficiently manipulating terahertz light, represents a fundamental step for many different applications. Split-ring resonators, sub-wavelength metamaterial elements exhibiting broad resonances that are easily tuned lithographically, represent the ideal route to achieve such optical control of the incident light. We have realized a design based on the interplay between metallic split rings and the electronic properties of a graphene monolayer integrated into a single device. By acting on the doping level of graphene, an active modulation of the optical intensity was achieved in the frequency range between 2.2 THz and 3.1 THz, with a maximum modulation depth of 18%.

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A wafer-level testable silicon-on-insulator-based microring modulator is demonstrated with high modulation speed, to which the grating couplers are integrated as the fiber-to-chip interfaces. Cost-efficient fabrications are realized with the help of optical structure and etching depth designs. Grating couplers and waveguides are patterned and etched together with the same slab thickness. Finally we obtain a 3-dB coupling bandwidth of about 60nm and 10 Gb/s nonreturn-to-zero modulation by wafer-level optical and electrical measurements.

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We have demonstrated a compact and an efficient passively Q-switched microchip Nd:YVO4 laser by using a composite semiconductor absorber as well as an output coupler. The composite semiconductor absorber was composed of an LT (low-temperature grown) In0.25Ga0.75As absorber and a pure GaAs absorber. To our knowledge, it was the first demonstration of the special absorber for Q-switching operation of microchip lasers. Laser pulses with durations of 1.1 ns were generated with a 350 mu m thick laser crystal and the repetition rate of the pulses was as high as 4.6 MHz. The average output power was 120 mW at the pump power of 700 mW. Pulse duration can be varied from 1.1 to 15.7 ns by changing the cavity length from 0.45 to 5 mm. Pulses with duration of 1.67 and 2.41 ns were also obtained with a 0.7 mm, thick laser crystal and a 1 mm thick laser crystal, respectively. (C) 2007 Elsevier GmbH. All rights reserved.

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We present the monolithic integration of a sampled-grating distributed Bragg reflector (SC-DBR) laser with a quantum-well electroabsorption modulator (QW-EAM) by combining ultra-low-pressure (55 mbar) selective-area-growth (SAG) metal-organic chemical vapour deposition (MOCVD) and quantum-well intermixing (QWI) for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the QWI technology offers an abrupt band-gap change between two functional sections, which reduces internal absorption loss. The experimental results show that the threshold current I-th = 62 mA, and output power reaches 3.6 mW. The wavelength tuning range covers 30 nm, and all the corresponding side mode suppression ratios are over 30 dB. The extinction ratios at available wavelength channels can reach more than 14 dB with bias of -5 V.

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This paper reports a novel traveling-wave electroabsorption modulator (TWEAM) with a large optical cavity waveguide and an intrastep quantum well structure designed to achieve a high bandwidth, high saturation power and better fiber-matched optical profile, which is good for high coupling efficiency. The optical mode characteristic shows a great improvement in matching the circular mode of the fiber and the saturation power of 21 dBm, and a 3 dB bandwidth of 23 GHz was achieved for the fabricated TWEAM.

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An optical modulator is designed and fabricated based on a Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetrical superlattice structure. The device comprises a p-i-n diode made on the asymmetrical superlattice integrated with a 920-mu m-long Fabry-Perot (F-P) cavity. Parameters of the rib waveguide are designed to satisfy only the fundamental-TE mode transmission. Here, 65 and 40-pm red shifts of the peak resonant were measured under the applied bias of 2.5 and -32.0 V, respectively. The analysis shows that, besides the thermal-optical and plasma dispersion effects, the Pockels effect also contributes to such a peak shift. The corresponding calculated effective Pockels coefficient is about 0.158 pm/V.

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Thermal effects will make chip temperature change with bias current of semiconductor lasers, which results in inaccurate intrinsic response by the conventional subtraction method. In this article, an extended subtraction method of scattering parameters for characterizing adiabatic responses of laser diode is proposed. The pulsed injection operation is used to determine the chip temperature of packaged semiconductor laser, and an optimal injection condition is obtained by investigating the dependence of the lasing wavelength on the width and period of the injection pulse in a relatively wide temperature range. In this case, the scattering parameters of laser diode are measured on adiabatic condition and the adiabatic intrinsic responses of packaged laser diode are first extracted. It is found that the adiabatic intrinsic responses are evidently superior to those without thermal consideration. The analysis results indicate that inclusion of thermal. effects is necessary to acquire accurate intrinsic responses of semiconductor lasers. (C) 2008 Wiley Periodicals, Inc.

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A method for fabrication of long-wavelength narrow line-width InGaAs resonant cavity enhanced (RCE) photodetectors in a silicon substrate operating at the wavelength range of 1.3-1.6 mu m has been developed. A full width at half maximum (FWHM) of 0.7 nm and a peak responsivity of 0. 16 A/W at the resonance wavelength of 1.55 mu m have been accomplished by using a thick InP layer as part of the resonant cavity. The effects of roughness and tilt of the InP layer surface, and its free carrier absorption, as well as the thickness deviation of the mirror pair on the resonance wavelength shift and the peak quantum efficiency of the RCE photodetectors are analyzed in detail, and approaches for minimizing them toward superior performance are suggested. (C) 2007 Elsevier B.V. All rights reserved.

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A 1.55 mu m InGaAsP-InP two-section DFB laser with a variable ridge width has been fabricated. Self-pulsations with frequencies around 3 GHz and 40 GHz are observed. The pulsation mechanisms related to the two frequencies are discussed and the tunability of generated self-pulsations is studied.