Hole-Phonon Relaxation and Photocatalytic Properties of Titanium Dioxide and Zinc Oxide: First-Principles Approach

First-principles calculations for the temporal characteristics of hole-phonon relaxation in the valence band of titanium dioxide and zinc oxide have been performed. A first-principles method for the calculations of the quasistationary distribution function of holes has been developed. The results show that the quasistationary distribution of the holes in TiO2 extends to an energy level approximately 1eV below the top of the valence band. This conclusion in turn helps to elucidate the origin of the spectral dependence of the photocatalytic activity of TiO2. Analysis of the analogous data for ZnO shows that in this material spectral dependence of photocatalytic activity in the oxidative reactions is unlikely.

From the Cajal alumni Achucarro and Rio-Hortega to the rediscovery of never-resting microglia

Under the guidance of Ramon y Cajal, a plethora of students flourished and began to apply his silver impregnation methods to study brain cells other than neurons: the neuroglia. In the first decades of the twentieth century, Nicolas Achucarro was one of the first researchers to visualize the brain cells with phagocytic capacity that we know today as microglia. Later, his pupil Pio del Rio-Hortega developed modifications of Achucarro's methods and was able to specifically observe the fine morphological intricacies of microglia. These findings contradicted Cajal's own views on cells that he thought belonged to the same class as oligodendroglia (the so called "third element" of the nervous system), leading to a long-standing discussion. It was only in 1924 that Rio-Hortega's observations prevailed worldwide, thus recognizing microglia as a unique cell type. This late landing in the Neuroscience arena still has repercussions in the twenty first century, as microglia remain one of the least understood cell populations of the healthy brain. For decades, microglia in normal, physiological conditions in the adult brain were considered to be merely "resting," and their contribution as "activated" cells to the neuroinflammatory response in pathological conditions mostly detrimental. It was not until microglia were imaged in real time in the intact brain using two-photon in vivo imaging that the extreme motility of their fine processes was revealed. These findings led to a conceptual revolution in the field: "resting" microglia are constantly surveying the brain parenchyma in normal physiological conditions. Today, following Cajal's school of thought, structural and functional investigations of microglial morphology, dynamics, and relationships with neurons and other glial cells are experiencing a renaissance and we stand at the brink of discovering new roles for these unique immune cells in the healthy brain, an essential step to understand their causal relationship to diseases.

Crank-Nicholson method for rate equations in powder random lasers

3rd International Conference on Mathematical Modeling in Physical Sciences (IC-MSQUARE 2014)

1.4 kV, 25 A, PT and NPT Trench IGBTs with optimum forward characteristics

In this paper we report the development of 1.4 kV 25 A PT and NPT Trench IGBTs with ultra-low on-resistance, latch-up free operation and highly superior overall performance when compared to previously reported DMOS IGBTs in the same class. We have fabricated both PT and transparent anode NPT devices to cover a wide range of applications which require very low on-state losses or very fast time with ultra-low switching losses. The minimum forward voltage drop at the standard current density of 100A/cm2 was 1.1 V for PT non-irradiated devices and 2.1 V for 16 MRad PT irradiated devices. The non-irradiated transparent emitter NPT structure has a typical forward voltage drop of 2.2 V, a turn-off time below 100 ns and turn-off energy losses of 11.2 mW/cm2 at 125 C. The maximum controllable current density was in excess of 1000A/cm2.

Investigating carbon materials for use as the electron emission source in a parallel electron-beam lithography system

A microelectronic parallel electron-beam lithography system using an array of field emitting microguns is currently being developed. This paper investigates the suitability of various carbon based materials for the electron source in this device, namely tetrahedrally bonded amorphous carbon (ta-C), nanoclustered carbon and carbon nanotubes. Ta-C was most easily integrated into a gated field emitter structure and various methods, such as plasma and heavy ion irradiation, were used to induce emission sites in the ta-C. However, the creation of such emission sites at desired locations appeared to be difficult/random in nature and thus the material was unsuitable for this application. In contrast, nanoclustered carbon material readily field emits with a high site density but the by-products from the deposition process create integration issues when using the material in a microelectronic gated structure. Carbon nanotubes are currently the most promising candidate for use as the emission source. We have developed a high yield and clean (amorphous carbon by-product free) PECVD process to deposit single free standing nanotubes at desired locations with exceptional uniformity in terms of nanotube height and diameter. Field emission from an array of nanotubes was also obtained. © 2001 Elsevier Science B.V.

A study of frequency response in silicon heterojunction bipolar transistors with amorphous silicon emitters

A detailed physical model of amorphous silicon (aSi:H) is incorporated into a twodimensional device simulator to examine the frequency response limits of silicon heterojunction bipolar transistors (HBT's) with aSi:H emitters. The cutoff frequency is severely limited by the transit time in the emitter space charge region, due to the low electron drift mobility in aSi:H, to 98 MHz which compares poorly with the 37 GHz obtained for a silicon homojunction bipolar transistor with the same device structure. The effects of the amorphous heteroemitter material parameters (doping, electron drift mobility, defect density and interface state density) on frequency response are then examined to find the requirements for an amorphous heteroemitter material such that the HBT has better frequency response than the equivalent homojunction bipolar transistor. We find that an electron drift mobility of at least 100 cnr'V"'"1 is required in the amorphous heteroemitter and at a heteroemitter drift mobility of 350 cm2 · V1· s1 and heteroemitter doping of 5×1017 cm3, a maximum cutoff frequency of 52 GHz can be expected. © 1996 IEEE.

Measurement of polarisation dependent all-optical nonlinearity in GaAs/AlGaAs quantum well waveguides far from the bandedge

The all-optical nonlinearity of a quantum well waveguide is studied by measuring the intensity dependent transmission through a Fabry-Perot cavity formed around the guide. Values for the nonlinear refractive index coefficient, η 2, at a wavelength of 1.06μm are obtained for light whose polarisation is either parallel or perpendicular to the quantum well layers. A simple measurement to estimate the two photon absorption coefficient, B2, using relatively low optical power levels is also described.

异质性环境中两种匍匐茎草本植物的克隆可塑性

　　克隆植物常常生长在资源异质性分布的环境中，克隆植物特有的生活史特征使其对环境和资源变化产生的反应规范（Reaction norm）具有特殊的表现和适应意义。本文以匍匐茎草本植物蛇莓(Duchesnea indica)和活血丹(Glechoma longituba)为材料，研究克隆植物在不同异质性环境中的反应规范，即可塑性（plasticity）和克隆分株间相互作用（即克隆整合（clonal integration））对表型的影响及其适应意义。 蛇莓和活血丹是具有不同分枝类型的两种匍匐茎草本植物。对于匍匐茎草本植物而言，生境中光资源分布在时间和空间上的变化极为丰富。本文主要研究在不同环境中，这两种克隆植物克隆分株间的相互作用是如何通过影响其形态特征，从而影响其光资源获取策略。 实验涉及了4种光照条件，分为5个部分，分别在大棚和野外进行。 1．同质光环境中蛇莓和活血丹克隆片段的可塑性 在大棚中，将整个克隆片段（clonal fragment）都放置在光照强度分别为自然光照PPFD（Photosynthetic Photon Flux Density）的100％、50％和10％三种不同的同质光环境中，目标是通过比较不同光照强度同质环境中不同基因型的形态特征，揭示匍匐茎草本克隆植物的反应规范及遗传差异。实验结果发现，当光照强度从100% PPFD 降到 50% PPFD时，活血丹增加对地上部分生物量投资，增加部分多投入到匍匐茎上，用于支持匍匐茎实现觅食行为，叶片和叶柄的变化不大。同样条件下，蛇莓的生物量投资却向根部转移，地上部分叶片和叶柄形态上的变化比匍匐茎的形态变化显著，出现增强对光资源吸收能力的变化。当光照强度从50%降到 10%时，活血丹继续增加对地上部分的生物量投资，但由于光照强度弱，几乎不足以维持新的匍匐茎的发生，所有增加的生物量部分都投入到叶片和叶柄的变化上。这种条件下，蛇莓的生物量投资依然向根部转移，叶片和叶柄为增加对光资源吸收能力而发生了相应变化，匍匐茎的新增数减少，形态变化也不大。实验证明，可能由于匍匐茎的发生方式不同，活血丹的匍匐茎节间长度，叶片和叶柄的关联程度比蛇莓相应性状的关联程度强。不同基因型的蛇莓和活血丹对光照梯度的反应有显著差异。 2．异质光环境中蛇莓克隆片段的可塑性 针对克隆植物分株间在相当长的时间里形体相连，而环境异质性可能存在于分株大小的空间尺度，设置异质环境，将蛇莓的不同相连分株放置在不同的光资源斑块中，研究其整合作用在适应异质性环境过程中的作用及其对表型的影响。首先设置同一种资源（光资源）的梯度差异斑块。 在光斑块中，整合作用发生与否、作用方式与资源梯度、分株自身所处斑块的资源条件和分株的年龄结构有关。在不同的条件下，整合作用可能造成对表型的不同影响，从而可能加剧或削弱分株对本地资源的反应（局部反应，local response）。整合作用对分株局部反应的影响强度和方向，在不同基因型间存在明显差异。这些基因型间的差异暗示，整合作用可能也是具有遗传基础的一种独立性状。 3．光块斑和养分斑块共存环境中活血丹克隆片段的可塑性 设置光和养分的资源互补性斑块。将相连分株种植在不同斑块中。当生长在高光低养斑块中的分株与其互补斑块（低光高养斑块）的分株相连时，其适合度相关性状的值增加，根冠比是可塑的，通过相应的形态变化，高光照斑块中的分株捕获光资源的能力增强，但两种斑块中植株的吸收养分的能力却没有大的变化。收益－损耗分析显示整合作用有益于异质环境中的植株，低光高养斑块中植株的生物量获益。实验结果证明了异质环境中相连分株间存在光合产物和养分传递。在这种环境种，分株形态的变化对本地斑块发生趋富反应，形态的改变有助于对本地丰富资源的吸收。这种反应有利于克隆片段对资源的吸收。 4．野外环境中蛇莓克隆片段的可塑性 基于大棚实验资料，对野外林下蛇莓种群进行监测。首先对单株在林下复杂的光环境中的表现进行了跟踪，结果发现，随着分株数目的增加，适合度相关性状值有所提高，而处于不同位置的相连分株在形态上的差异不显著。大棚实验中发现的显著形态变化在具有显著差异的自然环境条件下没有发生，这可能暗示着在资源条件变化频率较高的环境中整合作用的作用方式。分株不是对某一时刻资源条件进行形态特化，而是通过对所扩展的总体区域的总的环境条件调整表型。这样，从克隆片段的水平上看，资源的吸收可能达到较高水平。在密度增大，植株间互相荫蔽使得光照减弱的情况下，匍匐茎的变化没有表现出觅食行为，叶片和叶柄出现增大增长等增强吸收光能力的相应表型变化，证明叶片叶柄是克服光照不足的主要器官。这些结果与大棚实验结果一致。蛇莓基株对于相连分株内部可能具有密度调节功能，从而通过减弱叶片增大的趋势，增长匍匐茎，分散新生分株，使密度保持在一定程度，不对种群的发展造成阻碍作用。非相连分株间随着密度的增大，相互间的作用方式类似于非克隆植物：出现叶片增大，叶柄增长的现象，同时密度制约了适合度相关性状如分株数目等的增加。 5．野外环境中蛇莓种群格局动态 最后，在进化的单位，种群水平上对蛇莓种群在自然界的动态进行了调查。Spearman相关分析，没有发现光资源和测量指标在量上的相关。在自然界中整合作用使大量分散分布、相互连接的分株相互作用，以促进基株对资源的获取。Moran’s I指数分析显示，随时间的推进，各个指标在相关尺度上有所增加。这暗示了整合作用的存在，分株间联系的加强。大棚实验中观察到的关于各个器官的作用的结论在自然界中得到进一步的验证。蛇莓匍匐茎在遮荫环境中不是作为觅食器官。为了争取对更多光资源的吸收，蛇莓在叶片数和叶形态上发生改变。对分株数、叶片数、匍匐茎数目的分布格局的调查显示出没有一定的规律性，而且处于不断的变化中。这一结果可能暗示种群发展过程中处理异质性分布资源的对策的变化。 此外，本文还揭示了可塑性和整合作用在基因型间的差异，针对所发现的现象，从作用的遗传机制上对可塑性及其适应意义进行了讨论。结合分子生物学和地统计学等学科的研究成果，对进一步的实验提出了方法和路线。

HYDROGENATED AMORPHOUS SILICON THIN-FILM DEPOSITION BY DIRECT PHOTO-ENHANCED DECOMPOSITION OF SILANE USING AN INTERNAL HYDROGEN DISCHARGE LAMP.

Hydrogenated amorphous silicon (a-Si:H) thin films have been deposited from silane using a novel photo-enhanced decomposition technique. The system comprises a hydrogen discharge lamp contained within the reaction vessel; this unified approach allows high energy photon excitation of the silane molecules without absorption by window materials or the need for mercury sensitisation. The film growth rates (exceeding 4 Angstrom/s) and material properties obtained are comparable to those of films produced by plasma-enhanced CVD techniques. The reduction of energetic charged particles in the film growth region should enable the fabrication of cleaner semiconductor/insulator interfaces in thin-film transistors.

Compositional analysis of thin film amorphous semiconductors and insulators using LIMA

LIMA (Laser-induced Ion Mass Analysis) is a new technique capable of compositional analysis of thin films and surface regions. Under UHV conditions a focused laser beam evaporates and ionizes a microvolume of specimen material from which a mass spectrum is obtained. LIMA has been used to examine a range of thin film materials with applications in electronic devices. The neutral photon probe avoids charging problems, and low conductivity materials are examined without prior metallization. Analyses of insulating silicon oxides, nitrides, and oxynitrides confirm estimates of composition from infrared measurements. However, the hydrogen content of hydrogenated amorphous silicon (a-Si : H) found by LIMA shows no correlation with values given by infrared absorption analysis. Explanations are proposed and discussed. © 1985.

Photonics and lasing in liquid crystal materials

Owing to fundamental reasons of symmetry, liquid crystals are soft materials. This softness allows long length-scales, large susceptibilities and the existence of modulated phases, which respond readily to external fields. Liquid crystals with such phases are tunable, self-assembled, photonic band gap materials; they offer exciting opportunities both in basic science and in technology. Since the density of photon states is suppressed in the stop band and is enhanced at the band edges, these materials may be used as switchable filters or as mirrorless lasers. Disordered periodic liquid crystal structures can show random lasing. We highlight recent advances in this rapidly growing area, and discuss future prospects in emerging liquid crystal materials. Liquid crystal elastomers and orientationally ordered nanoparticle assemblies are of particular interest. © 2006 The Royal Society.

Significant improvements in optical power budgets of real-time optical OFDM PON systems.

Based on a comprehensive theoretical optical orthogonal frequency division multiplexing (OOFDM) system model rigorously verified by comparing numerical results with end-to-end real-time experimental measurements at 11.25Gb/s, detailed explorations are undertaken, for the first time, of the impacts of various physical factors on the OOFDM system performance over directly modulated DFB laser (DML)-based, intensity modulation and direct detection (IMDD), single-mode fibre (SMF) systems without in-line optical amplification and chromatic dispersion compensation. It is shown that the low extinction ratio (ER) of the DML modulated OOFDM signal is the predominant factor limiting the maximum achievable optical power budget, and the subcarrier intermixing effect associated with square-law photon detection in the receiver reduces the optical power budget by at least 1dB. Results also indicate that, immediately after the DML in the transmitter, the insertion of a 0.02nm bandwidth optical Gaussian bandpass filter with a 0.01nm wavelength offset with respect to the optical carrier wavelength can enhance the OOFDM signal ER by approximately 1.24dB, thus resulting in a 7dB optical power budget improvement at a total channel BER of 1 × 10(-3).

IGBT series connection under active voltage control

In this paper an Active Voltage Control (AVC) technique is presented, for series connection of insulated-gate-bipolar-transistors (IGBT) and control of diode recovery. The AVC technique can control the switching trajectory of an IGBT according to a pre-set reference signal. In series connections, every series connected IGBT follows the reference and so that the dynamic voltage sharing is achieved. For the static voltage balancing, the AVC technique can clamp the highest collector-to-emitter voltage to a pre-set clamping voltage level. By selecting the value of the clamping voltage, the difference among series connected IGBTs can be controlled in an accepted range. Another key advantage for AVC is that by changing the reference signal at turn-on, the diode recovery can be optimized. © 2011 EPE Association - European Power Electr.

Efficient field emission from triode-type 1D arrays of carbon nanotubes.

Carbon nanotube (CNT) emitters were formed on line-patterned cathodes in microtrenches through a thermal CVD process. Single-walled carbon nanotubes (SWCNTs) self-organized along the trench lines with a submicron inter-CNT spacing. Excellent field emission (FE) properties were obtained: current densities at the anode (J(a)) of 1 microA cm(-2), 10 mA cm(-2) and 100 mA cm(-2) were recorded at gate voltages (V(g)) of 16, 25 and 36 V, respectively. The required voltage difference to gain a 1:10 000 contrast of the anode current was as low as 9 V, indicating that a very low operating voltage is possible for these devices. Not only a large number of emission sites but also the optimal combination of trench structure and emitter morphology are crucial to achieve the full FE potential of thin CNTs with a practical lifetime. The FE properties of 1D arrays of CNT emitters and their optimal design are discussed. Self-organization of thin CNTs is an attractive prospect to tailor preferable emitter designs in FE devices.

Tm-doped fiber laser mode-locked by graphene-polymer composite

We demonstrate mode-locking of a thulium-doped fiber laser operating at 1.94 μm, using a graphene-polymer based saturable absorber. The laser outputs 3.6 ps pulses, with ∼0.4 nJ energy and an amplitude fluctuation ∼0.5%, at 6.46 MHz. This is a simple, low-cost, stable and convenient laser oscillator for applications where eye-safe and low-photon-energy light sources are required, such as sensing and biomedical diagnostics. © 2012 Optical Society of America.