Influence of Switching Conditions on the VETO Magnitudes in a GIS

Estimation of very fast transient overvoltage (VFTO) has been carried out using EMTP for various switching conditions in a 420 kV gas-insulated substation (GIS). The variation of the VFTO peak along the GIS bus nodes for disconnector and circuit breaker switching operations, as well as the variation of VFTO peak with different magnitudes of trapped charges, have been studied. The results indicate a distinct pattern of variation of VFTO peak along the nodes of the GIS bus in the case of disconnector switch operation as compared to that of circuit-breaker operation. It has also been noticed that the variation of VFTO peak levels are not in direct proportion to the trapped charge present on the HV bus.

Adaptive Harmonic Elimination Technique in Single Phase PWM Inverters

High frequency PWM inverters produce an output voltage spectrum at the fundamental reference frequency and around the switching frequency. Thus ideally PWM inverters do not introduce any significant lower order harmonics. However, in real systems, due to dead-time effect, device drops and other non-idealities lower order harmonics are present. In order to attenuate these lower order harmonics and hence to improve the quality of output current, this paper presents an \emph{adaptive harmonic elimination technique}. This technique uses an adaptive filter to estimate a particular harmonic that is to be attenuated and generates a voltage reference which will be added to the voltage reference produced by the current control loop of the inverter. This would have an effect of cancelling the voltage that was producing the particular harmonic. The effectiveness and the limitations of the technique are verified experimentally in a single phase PWM inverter in stand-alone as well as g rid interactive modes of operation.

Fast Direct Torque Control of an Open-End Induction Motor Drive Using 12-Sided Polygonal Voltage Space Vectors

A torque control scheme, based on a direct torque control (DTC) algorithm using a 12-sided polygonal voltage space vector, is proposed for a variable speed control of an open-end induction motor drive. The conventional DTC scheme uses a stator flux vector for the sector identification and then the switching vector to control stator flux and torque. However, the proposed DTC scheme selects switching vectors based on the sector information of the estimated fundamental stator voltage vector and its relative position with respect to the stator flux vector. The fundamental stator voltage estimation is based on the steady-state model of IM and the synchronous frequency of operation is derived from the computed stator flux using a low-pass filter technique. The proposed DTC scheme utilizes the exact positions of the fundamental stator voltage vector and stator flux vector to select the optimal switching vector for fast control of torque with small variation of stator flux within the hysteresis band. The present DTC scheme allows full load torque control with fast transient response to very low speeds of operation, with reduced switching frequency variation. Extensive experimental results are presented to show the fast torque control for speed of operation from zero to rated.

Electrical Switching and Other Properties of Chalcogenide Glasses

Abstract | Electrical switching which has applications in areas such as information storage, power control, etc is a scientifically interesting and technologically important phenomenon exhibited by glassy chalcogenide semiconductors. The phase change memories based on electrical switching appear to be the most promising next generation non-volatile memories, due to many attributes which include high endurance in write/read operations, shorter write/read time, high scalability, multi-bit capability, lower cost and a compatibility with complementary metal oxide semiconductor technology.Studies on the electrical switching behavior of chalcogenide glasses help us in identifying newer glasses which could be used for phase change memory applications. In particular, studies on the composition dependence of electrical switching parameters and investigations on the correlation between switching behavior with other material properties are necessary for the selection of proper compositions which make good memory materials.In this review, an attempt has been made to summarize the dependence of the electrical switching behavior of chalcogenide glasses with other material properties such as network topological effects, glass transition & crystallization temperature, activation energy for crystallization, thermal diffusivity, electrical resistivity and others.

The electrical switching and thermal behavior of bulk Ge(15)Te(85-x)Sn(x) and Ge(17)Te(83-x)Sn(x) glasses

Bulk Ge(15)Te(85 - x)Sn(x) and Ge(17)Te(83 - x)Sn(x) glasses, are found to exhibit memory type electrical switching. The switching voltages (V(t)) and thermal stability of Ge(15)Te(85 - x)Sn(x) and Ge(17)Te(83 - x)Sn(x) glasses are found to decrease with Sn content. The composition dependence of v, has been understood on the basis of the decrease in the OFF state resistance and thermal stability of these glasses with tin addition. X-ray diffraction studies reveal that no elemental Sn or Sn compounds with Te or Ge are present in thermally crystallized Ge-Te-Sn samples. This indicates that Sn atoms do not interact with the host matrix and form a phase separated network of its own, which remains in the parent glass matrix as an inclusion. Consequently, there is no enhancement of network connectivity and rigidity. The thickness dependence of switching voltages of Ge(15)Te(85 - x)Sn(x) and Ge(17)Te(83 - x)Sn(x) glasses is found to be linear, in agreement with the memory switching behavior shown by these glasses. (C) 2011 Elsevier B.V. All rights reserved.

Low-inductance axial flux BLDC motor drive for more electric aircraft

As aircraft technology is moving towards more electric architecture, use of electric motors in aircraft is increasing. Axial flux BLDC motors (brushless DC motors) are becoming popular in aero application because of their ability to meet the demand of light weight, high power density, high efficiency and high reliability. Axial flux BLDC motors, in general, and ironless axial flux BLDC motors, in particular, come with very low inductance Owing to this, they need special care to limit the magnitude of ripple current in motor winding. In most of the new more electric aircraft applications, BLDC motor needs to be driven from 300 or 600 Vdc bus. In such cases, particularly for operation from 600 Vdc bus, insulated-gate bipolar transistor (IGBT)-based inverters are used for BLDC motor drive. IGBT-based inverters have limitation on increasing the switching frequency, and hence they are not very suitable for driving BLDC motors with low winding inductance. In this study, a three-level neutral point clamped (NPC) inverter is proposed to drive axial flux BLDC motors. Operation of a BLDC motor driven from three-level NPC inverter is explained and experimental results are presented.

Adaptive window zero-crossing-based instantaneous frequency estimation

We address the problem of estimating instantaneous frequency (IF) of a real-valued constant amplitude time-varying sinusoid. Estimation of polynomial IF is formulated using the zero-crossings of the signal. We propose an algorithm to estimate nonpolynomial IF by local approximation using a low-order polynomial, over a short segment of the signal. This involves the choice of window length to minimize the mean square error (MSE). The optimal window length found by directly minimizing the MSE is a function of the higher-order derivatives of the IF which are not available a priori. However, an optimum solution is formulated using an adaptive window technique based on the concept of intersection of confidence intervals. The adaptive algorithm enables minimum MSE-IF (MMSE-IF) estimation without requiring a priori information about the IF. Simulation results show that the adaptive window zero-crossing-based IF estimation method is superior to fixed window methods and is also better than adaptive spectrogram and adaptive Wigner-Ville distribution (WVD)-based IF estimators for different signal-to-noise ratio (SNR).

Magnetic arm-switch-based three-phase series-shunt compensated quality AC power supply

This study presents a novel magnetic arm-switch-based integrated magnetic circuit for a three-phase series-shunt compensated uninterruptible power supply (UPS). The magnetic circuit acts as a common interacting field for a number of energy ports, viz., series inverter, shunt inverter, grid and load. The magnetic arm-switching technique ensures equivalent series or shunt connection between the inverters. In normal grid mode (stabiliser mode), the series inverter is used for series voltage correction and the shunt one for current correction. The inverters and the load are effectively connected in parallel when the grid power is not available. These inverters are then used to share the load power. The operation of the inverters in parallel is ensured by the magnetic arm-switching technique. This study also includes modelling of the magnetic circuit. A graphical technique called bond graph is used to model the system. In this model, the magnetic circuit is represented in terms of gyrator-capacitors. Therefore the model is also termed as gyrator-capacitor model. The model is used to extract the dynamic equations that are used to simulate the system using MATLAB/SIMULINK. This study also discusses a synchronously rotating reference frame-based control technique that is used for the control of the series and shunt inverters in different operating modes. Finally, the gyrator-capacitor model is validated by comparing the simulated and experimental results.

High Rate Capability Lithium Iron Phosphate Wired by Carbon Nanotubes and Galvanostatic Transformed to Graphitic Carbon

Lithium iron phosphate (LiFePO4) electronically wired by multi-walled carbon nanotubes (MWCNTs) and in-situ transformed graphitic carbon for lithium-ion batteries are discussed here. Presence of MWCNTs up to a maximum of 0.5% in porous LiFePO4 (abbreviated as LFP-CNT) resulted in remarkable reversible cyclability and rate capability compared to LFP coated with highly disordered carbon (abbreviated as LFP-C). In the current range (30-1500) mAg(-1), specific capacity of LFP-CNT (approximate to 150-50 mAhg(-1)) is observed to be always higher compared to LFP-C (approximate to 120-0 mAhg(-1)). At higher currents of 250-1500 mAg(-1) LFP-C performed poorly compared to LFP-CNT. LFP-C showed considerable decay in capacity with increase in cycle number at intermediate high currents (approximate to 250 mAg(-1)) whereas at very high currents (approximate to 750 mAg(-1)) it is nearly zero. The LFP-CNT showed no such detrimental behavior in battery performance. The exemplary performance of the LFP-CNT is attributed to combination of both enhanced LFP structural stability, as revealed by Raman spectra and formation of an efficient percolative network of carbon nanotubes which during the course of galvanostatic cycling gets gradually transformed to graphitic carbon. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.015204jes] All rights reserved.

Electrical switching and optical studies on amorphous GexSe35-xTe65 thin films

The electrical switching behavior of amorphous GexSe35-xTe65 thin film samples has been studied in sandwich geometry of electrodes. It is found that these samples exhibit memory switching behavior, which is similar to that of bulk Ge-Se-Te glasses. As expected, the switching voltages of GexSe35-xTe65 thin film samples are lower compared to those of bulk samples. In both thin film amorphous and bulk glassy samples, the switching voltages are found to increase with the increase in Ge concentration, which is consistent with the increase in network connectivity with the addition of higher coordinated Ge atoms. A sharp increase is seen in the composition dependence of the switching fields of amorphous GexSe35-xTe65 films above x = 21, which can be associated with the stiffness transition. Further, the optical band gap of a-GexSe35-x Te-65 thin film samples, calculated from the absorption spectra, is found to show an increasing trend with the increase in Ge concentration, which is consistent with the variation of switching fields with composition. The increase in structural cross-linking with progressive addition of 4-fold coordinated Ge atoms is one of the main reasons for the observed increase in switching fields as well as band gaps of GexSe35-xTe65 samples. (C) 2011 Elsevier B.V. All rights reserved.

Modeling of room temperature current-voltage measurements on homo-junction HgCdTe diodes exhibiting nonequilibrium effects

HgCdTe mid wave infrared (MWIR) n(+)/nu/p(+) homo-junction photodiodes with planar architecture are designed, fabricated, and measured at room temperature. An improved analytical I-V model is reported by incorporating trap assisted tunneling and electric field enhanced Shockley-Read-Hall generation recombination process due to dislocations. Tunneling currents are fitted before and after the Auger suppression of carriers with energy level of trap (E-t), trap density (N-t), and the doping concentrations of n(+) and nu regions as fitting parameters. Values of E-t and N-t are determined as 0.79 E-g and similar to 9 x 10(14) cm(-3), respectively, in all cases. Doping concentration of nu region was found to exhibit nonequilibrium depletion from a value of 2 x 10(16) to 4 x 10(15) cm(-3) for n(+) doping of 2 x 10(17) cm(-3). Pronounced negative differential resistance is observed in the homo-junction HgCdTe diodes. (C) 2012 American Institute of Physics. [doi:10.1063/1.3682483]