Effects of periphyton grown on bamboo substrates on growth and production of Indian major carp, rohu (Label rohita Ham.)

The effects of periphyton, grown on bamboo substrates, on growth and production of Indian major carp, rohu, Labeo rohita (Hamilton), were studied in 10 ponds during July to October '95 at the Bangladesh Agricultural University, Mymensingh. Five ponds were provided with bamboo substrates (treatment I) and the rests without bamboo substrates (treatment II). It was revealed that there had been no discernible difference in the water quality parameters between treatments. A large number of plankton (30 genera) showed periphytic nature and colonized on the bamboo substrates. The growth and production of fish was significantly (p<0.05) higher in the ponds with bamboo substrates as compared to the ponds without substrates. The net production of rohu in treatment I was about 1.7 times higher than that of treatment II. Fish production was as much as 1899 kg/ha over a culture period of 4 months in the periphyton-based production system.

Hydrogenated amorphous silicon and silicon nitride deposited at less than 100° C by ECR-PECVD for thin film transistors

A systematic study has been made of the growth of both hydrogenated amorphous silicon (a-Si:H) and silicon nitride (a-SiN) by electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD). In the case of a-SiN, helium and nitrogen gas is injected into the system such that it passes through the resonance zone. These highly ionised gases provide sufficient energy to ionise the silane gas, which is injected further downstream. It is demonstrated that a gas phase reaction occurs between the silane and nitrogen species. It is control of the ratio of silane to nitrogen in the plasma which is critical for the production of stoichiometric a-SiN. Material has been produced at 80°C with a Si:N ratio of 1:1.3 a breakdown strength of ∼6 MV cm-1 and resistivity of > 1014 Ω cm. In the case of a-Si:H, helium and hydrogen gas is injected into the ECR zone and silane is injected downstream. It is shown that control of the gas phase reactions is critical in this process also. a-Si:H has been deposited at 80 °C with a dark conductivity of 10-11 Ω-1 cm-1 and a photosensitivity of justbelowl 4×104. Such materials are suitable for use in thin film transistors on plastic substrates.